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The fast development of mid-wave infrared photonics has increased the demand for high-performance photodetectors that operate in this spectral range. However, the signal-to-noise ratio, regarded as a primary figure of merit for mid-wave infrared detection, is strongly limited by the high dark current in narrow-bandgap materials. Therefore, conventional mid-wave infrared photodetectors such as HgCdTe require cryogenic temperatures to avoid excessively high dark current. To address this challenge, we report an avalanche photodiode design using photon-trapping structures to enhance the quantum efficiency and minimize the absorber thickness to suppress the dark current. The device exhibits high quantum efficiency and dark current density that is nearly three orders of magnitude lower than that of the state-of-the-art HgCdTe avalanche photodiodes and nearly two orders lower than that of previously reported AlInAsSb avalanche photodiodes that operate at 2 µm. Additionally, the bandwidth of these avalanche photodiodes reaches ~7 GHz, and the gain–bandwidth product is over 200 GHz; both are more than four times those of previously reported 2 µm avalanche photodiodes.

We report Al0.3InAsSb/Al0.7InAsSb digital alloy n-barrier-n (nBn) photodetectors that operate in the 2-μm wavelength window. The AlxIn1-xAsySb1-y digital alloy material system exhibits near-zero valence-band offset, which is beneficial for nBn photodetectors. At 300 K these Al0.3InAsSb/Al0.7InAsSb nBn photodetectors have achieved specific detectivities of 1.7 × 10 10 and 3.0 × 10 10 Jones under 2-μm and 1.8-μm illumination, respectively. The dark current density at -0.5 V bias decreases from 3.1 × 10 -3 A/cm 2 at 300 K to 1.6 × 10 -10 A/cm 2 at 120 K, where the dominant dark current component is tunneling. The area-dependence of key performance parameters show that for mesa diameter ≤ 250 μm, surface defects assume a dominant role in the total noise.

Mid-IR is a useful wavelength range for both science and military applications due to its low atmospheric attenuation and ability to be used for passive detection. However, many solutions for detecting light in this spectral region need to be operated at cryogenic temperatures as their required narrow bandgaps suffer from carrier recombination and band-to-band tunneling at room temperature leading to high dark currents. These problems can be alleviated by using a separate absorption, charge, and multiplication avalanche photodiode. We have recently demonstrated such a device with a 3-µm cutoff using Al

We report the frequency response of Al0.3InAsSb/Al0.7InAsSb nBn photodetectors. The 3-dB bandwidth of the devices varies from ∼ 150 MHz to ∼ 700 MHz with different device diameters and saturates with bias voltage immediately after the device turn on. A new equivalent circuit model is developed to explain the frequency behavior of nBn photodetectors. The simulated bandwidth based on the new equivalent circuit model agrees well with the bandwidth and the microwave scattering parameter measurements. The analysis reveals that the limiting factor of the bandwidth of the nBn photodetector is the large diffusion capacitance caused by the minority carrier lifetime and the device area. Additionally, the bandwidth of the nBn photodetector is barely affected by the photocurrent, which is found to be caused by the barrier structure in the nBn photodetector.

The small lattice constants of the boron pnictides present exciting new opportunities for strain engineering and lattice-matching of III–V semiconductor heterostructures. However, the challenging s...

In applications where high sensitivity is required, the internal gain mechanism of avalanche photodiodes can provide a performance advantage relative to p-i-n photodiodes. However, this internal gain mechanism leads to an excess noise that scales with gain. This excess noise term can be minimized by using materials systems in which impact ionization is initiated primarily by one carrier type. Recently, two Sb-based materials systems, AlInAsSb and AlGaAsSb, have exhibited exceptionally low excess noise, particularly for III–V compound materials. There are four important considerations that can impact the excess noise measurements in such low-noise materials. These considerations deal with the excess noise factor calculation method, measurement RF frequency, measurement wavelength, and the gain calculation method. In this paper, each of these factors is discussed, and their implications on excess noise are considered.

We present a transient response study of a semiconductor based plasmonic switch. The proposed device operates through active control and modulation of localized electron density waves, i.e., surface plasmon polaritons (SPPs) at degenerately doped In0.53Ga0.47As based PN++ junctions. A set of devices is designed and fabricated, and its optical and electronic behaviors are studied both experimentally and theoretically. Optical characterization shows far-field reflectivity modulation, a result of electrical tuning of the SPPs at the PN++ junctions for mid-IR wavelengths, with significant 3 dB bandwidths. Numerical studies using a self-consistent electro-optic multi-physics model are performed to uncover the temporal response of the devices’ electromagnetic and kinetic mechanisms facilitating the SPP switching at the PN++ junctions. Numerical simulations show strong synergy with the experimental results, validating the claim of potential optoelectronic switching with a 3 dB bandwidth as high as 2 GHz. Thus, this study confirms that the presented SPP diode architecture can be implemented for high-speed control of SPPs through electrical means, providing a pathway toward fast all-semiconductor plasmonic devices.

In 1982, Capasso and co-workers proposed the solid-state analogue of the photomultiplier tube, termed the staircase avalanche photodiode. Through a combination of compositional grading and small applied bias, the conduction band profile is arranged into a series of steps that function similar to the dynodes of a photomultiplier tube, with twofold gain arising at each step via impact ionization. A single-step staircase was previously reported but did not demonstrate gain scaling through cascading multiple steps or report noise properties. Here we demonstrate gain scaling of up to three steps; measurements show the expected 2N scaling with the number of staircase steps, N. Furthermore, measured noise increased more slowly with gain than for photomultiplier tubes, probably due to the lower stochasticity of impact ionization across well-designed heterojunctions as compared with the secondary electron emission from metals. Excellent agreement was found between the experiments and Monte Carlo simulations for both gain and noise. A three-step staircase avalanche diode was demonstrated and pre-cited gain scaling was confirmed. The technology may be considered as a solid-state analogue to the photomultiplier tube.

Optoelectronic devices in the mid-infrared have attracted significant interest due to numerous potential applications in communications and sensing. Molecular beam epitaxial (MBE) growth of highly doped InAs has emerged as a promising “designer metal” platform for the plasmonic enhancement of mid-infrared devices. However, while typical plasmonic materials can be patterned to engineer strong localized resonances, the lack of lateral control in conventional MBE growth makes it challenging to create similar structures compatible with monolithically grown plasmonic InAs. To this end, we report the growth of highly doped InAs plasmonic ridges for the localized resonant enhancement of mid-IR emitters and absorbers. Furthermore, we demonstrate a method for regaining a planar surface above plasmonic corrugations, creating a pathway to epitaxially integrate these structures into active devices that leverage conventional growth and fabrication techniques.

In integrated photonics, specific wavelengths such as 1,550 nm are preferred due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, two-dimensional materials bear scientifically and technologically relevant properties such as electrostatic tunability and strong light–matter interactions. However, no efficient photodetector in the telecommunication C-band has been realized with two-dimensional transition metal dichalcogenide materials due to their large optical bandgaps. Here we demonstrate a MoTe2-based photodetector featuring a strong photoresponse (responsivity 0.5 A W–1) operating at 1,550 nm in silicon photonics enabled by strain engineering the two-dimensional material. Non-planarized waveguide structures show a bandgap modulation of 0.2 eV, resulting in a large photoresponse in an otherwise photoinactive medium when unstrained. Unlike graphene-based photodetectors that rely on a gapless band structure, this photodetector shows an approximately 100-fold reduction in dark current, enabling an efficient noise-equivalent power of 90 pW Hz–0.5. Such a strain-engineered integrated photodetector provides new opportunities for integrated optoelectronic systems. A strain-induced absorption-enhanced MoTe2-based silicon photonic microring-integrated photodetector is demonstrated, featuring high responsivity of ~0.5 A W–1 at 1,550 nm, with a low noise-equivalent power of 90 pW Hz–0.5.

We present a semiconductor-based optoelectronic switch based on active modulation of surface plasmon polaritons (SPPs) at lattice-matched indium gallium arsenide (In0.53Ga0.47As) degenerately doped pn++ junctions. The experimental device, which we refer to as a surface plasmon polariton diode (SPPD), is characterized electrically and optically, showing far-field reflectivity modulation for mid-IR wavelengths. Self-consistent electro-optic multiphysics simulations of the device’s electrical and electromagnetic response have been performed to estimate bias-dependent modulation and switching times. The numerical model shows a strong agreement with the experimental results, validating the claim of excitation and modulation of SPPs at the junction, thus potentially providing a new pathway toward fast optoelectronic devices.

Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise. In this article, we investigate the band structure‐related mechanisms that influence impact ionization. Band‐structures calculated using an empirical tight‐binding method and Monte Carlo simulations reveal that the mini‐gaps in the conduction band do not inhibit electron impact ionization. Good agreement between the full band Monte Carlo simulations and measured noise characteristics is demonstrated.

We report Al0.8In0.2As0.23Sb0.77 avalanche photodiodes with high gain ( $M>1300$ ) and low dark current at room temperature. Impact ionization coefficients for this material system are also extracted, indicating electron-dominant impact ionization. Low avalanche breakdown temperature dependence is demonstrated.

We investigate the room-temperature bandwidth performance of AlInAsSb avalanche photodiodes under 2-μm illumination. Parameter characterization denotes RC-limited performance. While measurements indicate a maximum gain-bandwidth product of 44 GHz for a 60-μm-diameter device, we scale this performance to smaller device sizes based on the RC response. For a 15-μm-diameter device, we predict a maximum gain-bandwidth product of approximately 144 GHz based on the reported measurements.

We demonstrate very low-noise characteristics at 115 K for 3-step and 5-step staircase avalanche photodiodes with gains of ~9 and ~30 respectively.

The n-barrier-n (nBn) photodetectors, fabricated from $Al_{03}InAsSb/Al_{0.7}InAsSb$ digital alloy exhibiting near-zero valence-band offset, have achieved specific detectivity of $1.7\times 10^{10}$ Jones at room temperature, and dark current density of $3.09\times 10^{-3}$ A/cm2 at bias of $-0.5V$ and RoA of $3724.0\ \Omega cm^{2}$ at 300 K.

Highly mismatched semiconductor alloys (HMAs) offer unusual combinations of bandgap and lattice constant, which are attractive for myriad applications. Dilute borides, such as BGa(In)As, are typically assumed to be HMAs. BGa(In)As can be grown in higher alloy compositions than Ga(In)NAs with comparable bandgaps, potentially enabling routes to lattice-matched telecom lasers on Si or GaAs. However, BGa(In)As remains relatively unexplored, especially with large fractions of indium. Density functional theory with HSE06 hybrid functionals was employed to study BGaInAs with 4%–44% In and 0%–11% B, including atomic rearrangement effects. All compositions showed a direct bandgap, and the character of the lowest conduction band was nearly unperturbed with the addition of B. Surprisingly, although the bandgap remained almost constant and the lattice constant followed Vegard's law with the addition of boron, the electron effective mass increased. The increase in electron effective mass was higher than in conventional alloys, though smaller than those characteristics of HMAs. This illustrates a particularly striking finding, specifically that the compositional space of BGa(In)As appears to span conventional alloy and HMA behavior, so it is not well-described by either limit. For example, adding B to GaAs introduces additional states within the conduction band, but further addition of In removes them, regardless of the atomic arrangement.

In this talk I will discuss our group’s work on the design, growth, fabrication and characterization of a new class of all-epitaxial plasmonic optoelectronic devices with enhanced performance when compared to state-of-the-art infrared optoelectronics. Specifically, we demonstrate that highly doped semiconductors, serving as ‘designer’ plasmonic materials, can be monolithically integrated with a range of infrared optoelectronic device architectures to provide strong field confinement, and enhanced emission, detection, and potentially modulation capabilities in the mid-infrared. We will present results from long-wave infrared detectors with thickness of only 350 nm, capable of over 50% external quantum efficiency and state-of-the-art detectivity, as well as dual color detectors, spectrally-selective detectors, and enhanced efficiency emitters leveraging our designer plasmonic materials with a range of novel device architectures.

Tensile-strained pseudomorphic Ge1–x–ySnxCy was grown on GaAs substrates by molecular beam epitaxy using carbon tetrabromide (CBr4) at low temperatures (171–258 °C). High resolution x-ray diffraction reveals good crystallinity in all samples. Atomic force microscopy showed atomically smooth surfaces with a maximum roughness of 1.9 nm. The presence of the 530.5 cm−1 local vibrational mode of carbon in the Raman spectrum verifies substitutional C incorporation in Ge1–x–ySnxCy samples. X-ray photoelectron spectroscopy confirms carbon bonding with Sn and Ge without evidence of sp2 or sp3 carbon formation. The commonly observed Raman features corresponding to alternative carbon phases were not detected. Furthermore, no Sn droplets were visible in scanning electron microscopy, illustrating the synergy in C and Sn incorporation and the potential of Ge1–x–ySnxCy active regions for silicon-based lasers.

Band gap alignments of BGaInAs/GaAs quantum wells with mole fractions of indium around 40% and mole fractions of boron ranging from 0% up to 4.75% are studied experimentally by photoreflectance (PR) and photoluminescence (PL). Obtained results are explained within a k · p model within an envelope function approximation. The study shows an increase of the valence band offset with an addition of boron into the thin film at a rate of around 4.2% per 1% of boron incorporated. Non-zero bowing parameters of valence band offsets for ternary alloys with boron (BGaAs and BInAs) are estimated. Moreover, it was observed that unlike in other highly mismatched alloy systems the incorporation of boron does not significantly deteriorate the optical quality of the studied samples, i.e., the broadening of optical transitions observed in PR and PL is very comparable to that observed for the reference QW, and the PL properties of boron containing QWs are similar to the reference boron free QW. Some deterioration of optical quality due to the increased alloy inhomogeneity is observed only for the sample with the highest concentration of B (4.2%).

Mid-IR is a useful wavelength range for both science and military applications due to its low atmospheric attenuation and ability to be used for passive detection. However, many solutions for detecting light in this spectral region need to be operated at cryogenic temperatures as their required narrow bandgaps suffer from carrier recombination and band-to-band tunneling at room temperature leading to high dark currents. These problems can be alleviated by using a separate absorption, charge, and multiplication avalanche photodiode. We have recently demonstrated such a device with a 3-µm cutoff using Al0.15In0.85As0.77Sb0.23, as the absorber, grown on GaSb. Here we investigate Al0.15In0.85As0.77Sb0.23 as a simple PIN homojunction and provide metrics to aid in future designs using this material. PL spectrum measurements indicate a bandgap of 2.94 µm at 300 K. External quantum efficiencies of 39% and 33% are achieved at 1.55 µm and 2 µm respectively. Between 180 K and 280 K the activation energy is ∼0.22 eV, roughly half the bandgap of Al0.15In0.85As0.77Sb0.23, indicating thermal generation is dominant.

We report Al0.7InAsSb avalanche photodiodes grow as ternary–binary and binary–binary digital alloys. Their characteristics of ideality factor, activation energy, temperature-dependent excess noise, temperature stability, and impact ionization coefficients are compared.

We demonstrate for the first time an entirely molecular beam epitaxy (MBE) approach to high-quality GaAs planar coalescence over embedded dielectric microstructures. Specifically, an all-MBE approach was achieved by developing a new two-stage growth process, merging the MBE growth regimes of III-flux modulated lateral epitaxial overgrowth (LEO) with self-ordered planarization of nonplanar substrates to produce highly selective planar coalescence specifically for embedding [010]-aligned silica gratings patterned on (001) substrates. The resulting planar coalescence returned a smooth (001) surface with surface roughness as low as 3 nm root-mean-square and photoluminescence (PL) equivalent to grating-free controls. In demonstrating high-quality GaAs coalescence, we also report for the first time an intentionally enhanced single InGaAs/GaAs/AlAs quantum well PL test structure seamlessly grown directly above embedded silica gratings, leading to a 1.4× enhancement in PL as a result of both Purcell and extractio...

Digital alloy AlInAsSb avalanche photodiodes exhibit low excess noise comparable to those fabricated from Si. The electron and hole ionization coefficients are critical parameters for simulation and analysis of high-sensitivity receivers. We report ionization coefficients using a mixed injection technique that employs measurement of the gain for different incident wavelengths and a simulation algorithm.

Avalanche photodiodes (APDs) can provide high receiver sensitivity owing to their internal gain, however, the impact ionization gain mechanism is also a source of noise. Recently, AlxIn1-xAsySb1-y grown as a digital alloy has been used to fabricate APDs with excess noise as low as Si (k ~ 0.01). Operation of these APDs at telecommunication wavelengths (1300 nm to 1550 nm) or 2 µm has been achieved. This paper also discusses staircase APDs, which utilize compositional grading to mimic the dynodes of a photomultiplier tube, with a gain of 2x arising at each step providing extremely low noise avalanche gain.

Patterned high mobility semiconductors enable tunable plasmonic devices at terahertz frequencies. We investigate broadband tuning of localized surface plasmon polaritons in InAs arrays from 1 – 8 THz using mid-IR pump-terahertz probe spectroscopy.

We analyze the mid-infrared emission resulting from the interplay between a type-II superlattice (T2SL) material and semiconductor-based plasmonic “designer metals”. We demonstrate an order of magnitude emission enhancement, accompanied by spectral reshaping, relative to all-dielectric T2SL counterparts and provide a theoretical description of the underlying physics. The all-semiconductor LWIR emitters with integrated plasmonic components, developed in this work, represent novel approach to broadband room-temperature mid-IR sources.

We present the design, growth, fabrication, and characterization of type-II quantum-dot (QD) based light emitting diodes (LEDs) mid-wave infrared wavelengths. We demonstrate promising temperature performance for the QD-LEDS and as their incorporation into monolithic plasmonic cavities. The potential for individual quantum emitter devices is discussed.

Remarkable systems have been reported recently using the polylithic integration of semiconductor optoelectronic devices and plasmonic materials exhibiting epsilon-near-zero (ENZ) and negative permittivity. In traditional noble metals, the ENZ and plasmonic response is achieved near their plasma frequencies, limiting plasmonic optoelectronic device design flexibility. Here, we leverage an all-epitaxial approach to monolithically and seamlessly integrate designer plasmonic materials into a quantum dot light emitting diode (LED), leading to a ~5.6 x enhancement over an otherwise identical non-plasmonic control sample. Devices exhibited optical powers comparable, and temperature performance far superior, to commercially-available devices., Comment: Journal letter, four pages, five figures

Here we show how strain-engineering (~4% tensile strain) lowers the bandgap (-0.2eV) of MoTe2 nanocrystals heterogeneously integrated around a silicon photonic waveguide, thus enabling photoabsorption at 1550nm, a responsivity of 0.5A/W and NEP of 90pW/Hz^2.

Here we report a massively-parallel 10٨6 channel Fourier-optics convolutional processor accelerated 160x over spatial-light-modulators using digital-mirror-display technology as input and kernel. Testing the system on MNIST and CIFAR-10 datasets shows 96% and 54% accuracy, respectively.

Here we report on a massively-parallel Fourier-optics convolutional processor accelerated 160x over spatial-light-modulators using digital-mirror-display technology as input and kernel. Testing the system on MNIST and CIFAR-10 datasets shows 96% and 54% accuracy, respectively.