Narrow bandgap Al0.15In0.85As0.77Sb0.23 for mid-infrared photodetectors

Mid-IR is a useful wavelength range for both science and military applications due to its low atmospheric attenuation and ability to be used for passive detection. However, many solutions for detecting light in this spectral region need to be operated at cryogenic temperatures as their required narrow bandgaps suffer from carrier recombination and band-to-band tunneling at room temperature leading to high dark currents. These problems can be alleviated by using a separate absorption, charge, and multiplication avalanche photodiode. We have recently demonstrated such a device with a 3-µm cutoff using Al0.15In0.85As0.77Sb0.23, as the absorber, grown on GaSb. Here we investigate Al0.15In0.85As0.77Sb0.23 as a simple PIN homojunction and provide metrics to aid in future designs using this material. PL spectrum measurements indicate a bandgap of 2.94 µm at 300 K. External quantum efficiencies of 39% and 33% are achieved at 1.55 µm and 2 µm respectively. Between 180 K and 280 K the activation energy is ∼0.22 eV, roughly half the bandgap of Al0.15In0.85As0.77Sb0.23, indicating thermal generation is dominant.