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High-Quality GaAs Planar Coalescence over Embedded Dielectric Microstructures Using an All-MBE Approach
- Source :
- Crystal Growth & Design. 19:3085-3091
- Publication Year :
- 2019
- Publisher :
- American Chemical Society (ACS), 2019.
-
Abstract
- We demonstrate for the first time an entirely molecular beam epitaxy (MBE) approach to high-quality GaAs planar coalescence over embedded dielectric microstructures. Specifically, an all-MBE approach was achieved by developing a new two-stage growth process, merging the MBE growth regimes of III-flux modulated lateral epitaxial overgrowth (LEO) with self-ordered planarization of nonplanar substrates to produce highly selective planar coalescence specifically for embedding [010]-aligned silica gratings patterned on (001) substrates. The resulting planar coalescence returned a smooth (001) surface with surface roughness as low as 3 nm root-mean-square and photoluminescence (PL) equivalent to grating-free controls. In demonstrating high-quality GaAs coalescence, we also report for the first time an intentionally enhanced single InGaAs/GaAs/AlAs quantum well PL test structure seamlessly grown directly above embedded silica gratings, leading to a 1.4× enhancement in PL as a result of both Purcell and extractio...
- Subjects :
- Coalescence (physics)
Photoluminescence
Materials science
010405 organic chemistry
business.industry
Physics::Optics
General Chemistry
Dielectric
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
010402 general chemistry
Condensed Matter Physics
Epitaxy
01 natural sciences
0104 chemical sciences
Condensed Matter::Materials Science
Planar
Surface roughness
Optoelectronics
General Materials Science
business
Quantum well
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 15287505 and 15287483
- Volume :
- 19
- Database :
- OpenAIRE
- Journal :
- Crystal Growth & Design
- Accession number :
- edsair.doi...........a5c6967355664694c8ba39efca774d84