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To explore the effectiveness of a modified fear hierarchy on measuring improvements in movement-associated fear in chronic low back pain.A modified 3-item fear hierarchy was created and implemented based on principles of graded exposure. This study was an exploratory analysis of the modified 3-item fear hierarchy from a larger clinical trial data set. Both groups received pain education and exercise, either bodyweight or strength training. Both groups performed item one on the hierarchy, the squat. Only the strength training group performed item 2, the deadlift. Neither group performed item 3, the overhead press. Analysis of Covariance and stepwise linear regression were used to explore results.Improvement in movement-associated fear was conditional upon graded exposure. Both groups improved in the squat movement (p ≤ 0.05), which both performed. Only the strength training group improved in the deadlift (p ≤ 0.01), and neither improved in the overhead press (p ≥ 0.05).Reductions in movement-associated fear are conditional upon graded exposure, based on the use of a novel modified 3-item fear hierarchy. Further research is needed to understand the utility of this tool in a patient-led approach to co-designing a graded exposure-based intervention.

Background: To investigate the efficacy of targeted education on clinical decision-making in accredited exercise physiologists. Methods: Fifty accredited exercise physiologists undertook a 4-hour targeted education session aimed to demonstrate why the biopsychosocial model is better suited to the management of chronic low back pain than the biomedical model. The pain attitudes and beliefs scale for physiotherapists and patient vignettes were collected before and after the targeted education to observe changes in beliefs and clinical decision-making. Results: A significant reduction in biomedical beliefs (P < 0.01) with no concomitant change in biopsychosocial beliefs was observed following the targeted education. Clinical decision-making significantly altered on all 8 items associated with the patient vignettes following the targeted education. Conclusion: Following targeted education, a reduction in biomedical beliefs with no concomitant change to biopsychosocial beliefs significantly altered clinical decision-making. The findings of this study support existing literature and demonstrate changes in attitudes and beliefs following education impact clinical decision-making in accredited exercise physiologists. Education interventions should focus on informing practitioners of the benefits of the biopsychosocial model as compared to the biomedical model for management of chronic low back pain rather than simply teaching biopsychosocial theory and application.

Background Contemporary management of chronic low back pain involves combined exercise and pain education. Currently, there is a gap in the literature for whether any exercise mode better pairs with pain education. The purpose of this study was to compare general callisthenic exercise with a powerlifting style programme, both paired with consistent pain education, for chronic low back pain. We hypothesised powerlifting style training may better compliment the messages of pain education. Methods An 8-week single-blind randomised controlled trial was conducted comparing bodyweight exercise (n = 32) with powerlifting (n = 32) paired with the same education, for people with chronic low back pain. Exercise sessions were one-on-one and lasted 60-min, with the last 5–15 min comprising pain education. Pain, disability, fear, catastrophizing, self-efficacy, anxiety, and depression were measured at baseline, 8-weeks, 3-months, and 6-months. Results No significant between-group differences were observed for pain ( p≥0.40), or disability ( p≥0.45) at any time-point. Within-group differences were significantly improved for pain ( p ≤ 0.04) and disability ( p ≤ 0.04) at all time-points for both groups, except 6-month disability in the bodyweight group ( p = 0.1). Behavioural measures explained 39–60% of the variance in changes in pain and disability at each time-point, with fear and self-efficacy emerging as significant in these models ( p ≤ 0.001) Conclusions Both powerlifting and bodyweight exercise were safe and beneficial when paired with pain education for chronic low back pain, with reductions in pain and disability associated with improved fear and self-efficacy. This study provides opportunity for practitioners to no longer be constrained by systematic approaches to chronic low back pain.

Despite being a first-line treatment recommendation, there is uncertainly for how exercise helps people with chronic low back pain. We designed this study to examine how exercise might help people with chronic low back pain by following a large community sample for 1-year. Qualitative questionnaires and self-report measures were collected every 3-months for 1-year in 400 people with chronic low back pain. People were not provided any specific treatment advice as part of this study but were allowed to engage with any normal physical activity, treatment, or medication as part of their normal life. Exercise engagement was defined from inspection of participant qualitative responses, according to minimum acceptable levels of exercise that elicit symptom reduction. Multiple mediation analysis was performed to examine the effect of exercise engagement on disability through the proposed mediators (pain, fear, catastrophizing, depression, anxiety, self-efficacy). The significant effect of exercise engagement on reductions in disability at 6- and 12-months was explained through pain and catastrophizing. People with chronic low back pain who reported worsening of symptoms over the year had similar reporting of exercise throughout the 12-months to people who had improvements in disability. Exercise can reduce disability through the effect on pain and catastrophizing, but how this effect occurs (i.e., an active or passive component of exercise) is unclear.

Fatigability after gym-based resistance exercises with high and low loads has not been well described, thus limiting the translation of exhaustive low-weight prescription into athletic practice. We compared the fatigability and recovery of the knee extensor muscles for up to 1H after sessions that involved either high- or low-load resistance exercises.16 trained men performed two resistance exercise sessions between 5 and 7 days apart. The LIGHT session involved five sets to task failure at 50% of maximal knee-extension strength, whereas the HEAVY session accrued repetitions across seven sets at intensities ≥ 80% maximal knee-extension strength. Measures of quadriceps maximal torque and rate of torque development were measured before, after, and 1H after each exercise session. Muscle activation (electromyography and voluntary activation) and contractility were measured from doublet stimulation of the femoral nerve during and after maximal contractions, respectively.Greater declines in maximal rate of torque development were observed after the LIGHT compared with the HEAVY session (p 0.001), with full recovery after 1H. Voluntary activation (100-Hz doublet stimulation) and surface electromyograms were reduced immediately after the HEAVY session only (p 0.05), with greater declines in quadriceps twitch amplitudes after the LIGHT session (p 0.01). Voluntary activation (100-Hz doublet stimulation) was reduced at 1H after both the HEAVY and LIGHT sessions (p 0.05).Despite differences in the decreases in muscle activation and contractility after high- and low-load resistance-exercise sessions, recovery of neuromuscular function was essentially complete after 1H of rest for both sessions.

This study measured the self-reported level of fatigue, pain, and neuromuscular function of the knee extensor muscles over a three-day period that included two consecutive days of full-body resistance exercises.10 resistance-trained men performed two consecutive days of full-body resistance exercise. Muscle activation (electromyography and voluntary activation), contractility, and presynaptic inhibition of Ia afferents (homosynaptic and GABA mediated presynaptic inhibition) for the quadriceps were examined from femoral and posterior tibial nerve stimulation.Fatigue and pain were elevated after Day 1, and were not reduced to pre-exercise levels at the start of Day 2 (p 0.05). Maximal voluntary torque (- 51.4 Nm, 95% CI = 12.4-90.4 Nm, p = 0.005) and rate of torque development (- 469 Nm.sResistance exercise in the presence of elevated fatigue and pain from a previous training session does not worsen recovery, or lead to significant alterations in quadriceps neuromuscular function. Reduction in muscle contractility, in the absence of declines in muscle activation, does not lead to decreased voluntary torque.

We examined the effect of ischemic preconditioning (IPC) on changes in muscle force, activation, and the spinal reflex pathway during and after repeated sprint cycling.Eight recreationally active men (high-intensity cardiorespiratory training 3 times per week, 6 months) completed two exercise sessions (5 sets of 5 cycling sprints, 150% max W), preceded by either IPC (3 × 5 min leg occlusions at 220 mmHg) or SHAM (3 × 5 min at 20 mmHg). Knee extensor maximal force and rate of force were measured before (PRE), immediately post (POST), 1H, and 24H after cycling. Twitch interpolation and resting potentiated twitches were applied to estimate voluntary activation and muscle contractility, respectively. Quadriceps H-reflex recruitment curves were collected at all time-points using 10 Hz doublet stimulation to allow estimation of H-reflex post-activation depression. Surface electromyograms and tissue oxygenation (via near-infrared spectroscopy) were continuously recorded during cycling.IPC did not affect any measure of neuromuscular function or performance during cycling. Maximal force and muscle contractility were significantly lower at POST and 1H compared to PRE and 24H by up to 50% (p 0.01). Maximal force was lower than PRE at 24H by 8.7% (p = 0.028). Voluntary activation and rate of force were unchanged. A rightwards shift was observed for the H-reflex recruitment curve POST, and post-activation depression was higher than all other time-points at 24H (p 0.05). Muscle activation and oxygenation decreased during cycling.IPC has a nominal effect on mechanisms associated with neuromuscular function during and after exercise in healthy populations.

In this study, we present low-energy proton single-event upset (SEU) data on a 65 nm SOI SRAM whose substrate has been completely removed. Since the protons only had to penetrate a very thin buried oxide layer, these measurements were affected by far less energy loss, energy straggle, flux attrition, and angular scattering than previous datasets. The minimization of these common sources of experimental interference allows more direct interpretation of the data and deeper insight into SEU mechanisms. The results show a strong angular dependence, demonstrate that energy straggle, flux attrition, and angular scattering affect the measured SEU cross sections, and prove that proton direct ionization is the dominant mechanism for low-energy proton-induced SEUs in these circuits.

This conference presents the recipients of the Outstanding Conference Paper Award from the 2015 IEEE Nuclear and Space Radiation Effects Conference.

The recipients of the 2014 NSREC Outstanding Conference Paper Award are Nathaniel A. Dodds, James R. Schwank, Marty R. Shaneyfelt, Paul E. Dodd, Barney L. Doyle, Michael Trinczek, Ewart W. Blackmore, Kenneth P. Rodbell, Michael S. Gordon, Robert A. Reed, Jonathan A. Pellish, Kenneth A. LaBel, Paul W. Marshall, Scot E. Swanson, Gyorgy Vizkelethy, Stuart Van Deusen, Frederick W. Sexton, and M. John Martinez, for their paper entitled "Hardness Assurance for Proton Direct Ionization-Induced SEEs Using a High-Energy Proton Beam." For older CMOS technologies, protons could only cause single-event effects (SEEs) through nuclear interactions. Numerous recent studies on 90 nm and newer CMOS technologies have shown that protons can also cause SEEs through direct ionization. Furthermore, this paper develops and demonstrates an accurate and practical method for predicting the error rate caused by proton direct ionization (PDI).

We report low-energy proton and alpha particle SEE data on a 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) that demonstrates the criticality of understanding and using low-energy protons for SEE testing of highly-scaled technologies

The low-energy proton energy spectra of all shielded space environments have the same shape. This shape is easily reproduced in the laboratory by degrading a high-energy proton beam, producing a high-fidelity test environment. We use this test environment to dramatically simplify rate prediction for proton direct ionization effects, allowing the work to be done at high-energy proton facilities, on encapsulated parts, without knowledge of the IC design, and with little or no computer simulations required. Proton direct ionization (PDI) is predicted to significantly contribute to the total error rate under the conditions investigated. Scaling effects are discussed using data from 65-nm, 45-nm, and 32-nm SOI SRAMs. These data also show that grazing-angle protons will dominate the PDI-induced error rate due to their higher effective LET, so PDI hardness assurance methods must account for angular effects to be conservative. As a result, we show that this angular dependence can be exploited to quickly assess whether an IC is susceptible to PDI.

The potential for using the degraded beam of high-energy proton radiation sources for proton hardness assurance testing for ICs that are sensitive to proton direct ionization effects are explored. SRAMs were irradiated using high energy proton radiation sources (~67-70 MeV). The proton energy was degraded using plastic or Al degraders. Peaks in the SEU cross section due to direct ionization were observed. To best observe proton direct ionization effects, one needs to maximize the number of protons in the energy spectrum below the proton energy SEU threshold. SRIM simulations show that there is a tradeoff between increasing the fraction of protons in the energy spectrum with low energies by decreasing the peak energy and the reduction in the total number of protons as protons are stopped in the device as the proton energy is decreased. Two possible methods for increasing the number of low energy protons is to decrease the primary proton energy to reduce the amount of energy straggle and to place the degrader close to the DUT to minimize angular dispersion. These results suggest that high-energy proton radiation sources may be useful for identifying devices sensitive to proton direct ionization.

We measured low-energy proton radiation induced soft error rates (SER) of standard and reduced-SER (RSER) latches, manufactured in 32 nm and 45 nm bulk CMOS technologies, and conclude that sequential logic elements built in these technologies are not yet susceptible. Further, our results demonstrate that at proton energies where direct ionization dominates, critical charge (Qcrit) plays a far bigger role than at proton energies above the nuclear reaction threshold.

Single event upset (SEU) experimental heavy ion data and modeling results for CMOS, silicon-on-insulator (SOI), 32 nm and 45 nm stacked and DICE latches are presented. Novel data analysis is shown to be important for hardness assurance where Monte Carlo modeling with a realistic heavy ion track structure, along with a new visualization aid (the Angular Dependent Cross-section Distribution, ADCD), allows one to quickly assess the improvements, or limitations, of a particular latch design. It was found to be an effective technique for making SEU predictions for alternative 32 nm SOI latch layouts.

A 1 GeV/amu 56Fe ion beam allows for true 90° tilt irradiations of various microelectronic components and reveals relevant upset trends at the GCR flux energy peak. Three SRAMs and an SRAM-based FPGA evaluated at the NASA Space Radiation Effects Laboratory demonstrate that a 90° tilt irradiation yields a unique device response. These tilt angle effects need to be screened for, and if found, pursued with radiation transport simulations to quantify their impact on event rate calculations.

We report new results from both broad-beam, heavy-ion and proton experiments for circuit-level RHBD techniques in SiGe digital logic. Redundant circuit elements within the latches are used to significantly reduce single-event upset rates in shift registers and clock paths, without resorting to TMR techniques.

We investigate a novel implementation of junction isolation to harden a 200 GHz SiGe:C HBT technology without deep trench isolation against single event effects. The inclusion of isolation is shown to have no effect on the dc or ac performance of the nominal device, and likewise does not reduce the HBTs inherent tolerance to TID radiation exposure on the order of a Mrad. A 69% reduction in total integrated charge collection across a slice through the center of the device was achieved. In addition, a 26% reduction in collected charge is reported for strikes to the center of the emitter. 3-D NanoTCAD simulations are performed on RHBD and control device models yielding a good match to measured results for strikes from the emitter center to 8 ?m away. This result represents one of the most effective transistor layout-level RHBD approaches demonstrated to date in SiGe.

Silicon-germanium heterojunction bipolar transistor (SiGe HBT) heavy ion-induced current transients are measured using Sandia National Laboratories' microbeam and high- and low-energy broadbeam sources at the Grand Acce?le?rateur National d'Ions Lourds, Caen, France, and the University of Jyva?skyla?, Finland. The data were captured using a custom broadband IC package and real-time digital phosphor oscilloscopes with at least 16 GHz of analog bandwidth. These data provide detailed insight into the effects of ion strike location, range, and LET.

We investigate the single-event transient (SET) response of bandgap voltage references (BGRs) implemented in SiGe BiCMOS technology through heavy ion microbeam experiments. The SiGe BGR circuit is used to provide the input reference voltage to a voltage regulator. SiGe HBTs in the BGR circuit are struck with 36-MeV oxygen ions, and the subsequent transient responses are captured at the output of the regulator. Sensitive devices responsible for generating transients with large peak magnitudes (more than 5% of the dc output voltage) are identified. To determine the effectiveness of a transistor-layout-based radiation hardened by design (RHBD) technique with respect to immunity to SETs at the circuit level, the BGR circuit implemented with HBTs surrounded by an alternate reverse-biased pn junction (n-ring RHBD) is also bombarded with oxygen ions, and subsequent SETs are captured. Experimental results indicate that the number of events causing transients with peak magnitude more than 5% above the dc level have been reduced in the RHBD version; however, with the inclusion of the n-ring RHBD, new locations for the occurrence of transients (albeit with smaller peak magnitude) are created. Transients at the transistor-level are also independently captured and are presented. It is demonstrated that while the transients are short at the transistor level (ns duration), relatively long transients are obtained at the circuit level (hundreds of nanoseconds). In addition, the impact of the SET response of the BGR on the performance of an ultra-high-speed 3-bit SiGe analog-to-digital converter (ADC) is investigated through simulation. It is shown that ion-induced transients in the reference voltage could eventually lead to data corruption at the output of the ADC.

We investigate the applicability of current total ionizing dose (TID) test protocols in the context of advanced transistor technologies such as Silicon-Germanium heterojunction bipolar transistors(SiGe HBTs). In SiGe HBTs, an unexpected shift in collector current is observed during total dose irradiation. Using both device and circuit measurements, we investigate this phenomenon and assess its potential importance in hardness assurance of SiGe components. TCAD simulations were performed to explain the observed current shifts.

This work examines the individual impact of drift and diffusion charge collection in the collector-base (CB) and collector-substrate (CS) junctions on single-event-upset (SEU) in SiGe HBT current mode logic (CML) circuits. The CS junction diffusion charge collection has negligible impact on circuit SEU, despite its large charge collection magnitude. The CB and CS drift charge collection are primarily responsible for the observed SEU in CML circuits. The CB drift charge collection is as important as the CS drift charge collection, even though its charge magnitude is much less, because the resulting current excitation appears between collector and base nodes, and hence is amplified. Using selective ion track placement, we show that an ion track passing through the physical CS junction is much more effective in causing SEU than an ion track not passing through the CS junction because of potential funneling and consequent large induced drift current magnitude, which is necessary for SEU of CML circuit.

The mechanism for ionizing radiation damage in multi-finger SOI CMOS devices is presented for the first time. We analyzed the effects of shallow-trench isolation on ionizing radiation response of 65 nm Silicon-On-Insulator (SOI) CMOS technology. The radiation response of the CMOS devices was investigated using 63 MeV protons and 10 keV X-rays. The implications of proton irradiation and X-ray irradiation on the dc and RF performance of these devices are presented. The cut-off frequency is degraded due to post-irradiation degradation of device transconductance. Even though there is charge-accumulation in the buried-oxide, there is minimal impact on the front-gate characteristics of the partially-depleted SOI devices in this 65 nm CMOS technology. The implications of parasitic conduction along the STI on device design constraints, particularly for varying device width and number of gate fingers, are discussed in the context of high performance RF CMOS technology. These results suggest that body-contacting schemes which eliminate sidewalls (e.g., H-body, T-body) will provide the necessary total-dose radiation tolerance for multi-finger analog and RF devices, without additional hardening techniques.

Experimental results are presented on single-bit-upsets (SBU) and multiple-bit-upsets (MBU) on a 45 nm SOI SRAM. The accelerated testing results show the SBU-per-bit cross section is relatively constant with technology scaling but the MBU cross section is increasing. The MBU data show the importance of acquiring and analyzing the data with respect to the location of the multiple-bit upsets since the relative location of the cells is important in determining which MBU upsets can be corrected with error correcting code (ECC) circuits. For the SOI SRAMs, a large MBU orientation effect is observed with most of the MBU events occurring along the same SRAM bit-line; allowing ECC circuits to correct most of these MBU events.

The effects of 63 MeV proton irradiation on 65nm Silicon-On-Insulator (SOI) CMOS technology are presented for the first time. The radiation response of the CMOS devices was investigated up to an equivalent total gamma dose of 4.1 Mrad (SiO2). We analyze the implications of proton irradiation on RF performance of these devices. The cut-off frequency is degraded due to post-irradiation degradation of device transconductance. High-frequency measurements show that the input and output matching conditions are not affected, up to a cumulative dose of 4.1 Mrad. The implications of proton irradiation on device design constraints, particularly device width and number of gate fingers, are discussed in the context of high performance RF CMOS technology. These results suggest that the higher finger width devices, of sufficient gate width, are well-suited for the development of total-dose radiation tolerant analog and RF circuits without additional radiation hardening.

The effects of materials surrounding the active devices on single event-induced charge generation in a proton-irradiated Si diode array are shown be significant. Particle scatters in layers underlying the device have an impact on the response of a focal plane array. This effect is likely to be important in a variety of semiconductor devices.

This paper presents the first comprehensive investigation of the impact of proton irradiation on the performance of high-voltage (HV) nMOS transistors implemented in a low-voltage (LV) SiGe BiCMOS technology. The effects of irradiation gate bias, irradiation substrate bias, and operating substrate bias on the radiation response of these transistors are examined. Experimental results show that the radiation-induced subthreshold leakage current under different irradiation biasing conditions remains negligible after exposure to a total dose of 600 krad(Si). We find that there are differences in the radiation response of LV and HV MOSFETs, suggesting that the mechanisms involved in causing degradation in LV and HV transistors could be of fundamentally different origins.

This work presents 3-D mixed-mode simulation results of single event transients (SET) in SiGe HBT emitter followers. The impact of circuit design parameters, including biasing current and resistance are detailed. A simple increase of biasing emitter current is shown to be ineffective for hardening. Instead, during SET, the emitter voltage upset simply follows the base voltage upset due to the inherent nature of the emitter follower topology during circuit operation. The duration and the peak value of the base voltage upset are determined by the impedance and electric field between collector and base. As a result, the use of a smaller base biasing resistance is desirable for reducing SETs in emitter followers.

We report the first irradiation results on high-frequency SiGe HBT and CMOS phase shifters for space-based, phased-array antennas used in radar or wireless communication systems. Both phase shifter circuits remain functional with acceptable dc and RF performance up to multi-Mrad proton exposure, and are thus suitable for many orbital applications. In addition, simulation results probing the limits of phase shifter performance in a radiation environment are presented. These results show that both CMOS and SiGe HBT based phase shifters can be used for space-based applications without any specific radiation hardening techniques.

Experimental results are presented on proton induced single-event-upsets (SEU) on a 65 nm silicon-on-insulator (SOI) SRAM. The low energy proton SEU results are very different for the 65 nm SRAM as compared with SRAMs fabricated in previous technology generations. Specifically, no upset threshold is observed as the proton energy is decreased down to 1 MeV; and a sharp rise in the upset cross-section is observed below 1 MeV. The increase below 1 MeV is attributed to upsets caused by direct ionization from the low energy protons. The implications of the low energy proton upsets are discussed for space applications of 65 nm SRAMs; and the implications for radiation assurance testing are also discussed.

We present the first experimental results confirming the increased SEE sensitivity of SiGe digital bipolar logic circuits operating in a 63 MeV proton environment at cryogenic temperatures. A 3× increase in both the error-event and bit-error cross sections is observed as the circuits are cooled from 300 K to 77 K, with error signature analyses indicating corresponding increases in the average number of bits-in-error and error length over data rates ranging from 50 Mbit/s to 4 Gbit/s. Single-bit-errors dominate the proton-induced SEU response at both 300 K and 77 K, as opposed to the multiple-bit-errors seen in the heavy-ion SEU response. Temperature dependent substrate carrier lifetime measurements, when combined with calibrated 2 D DESSIS simulations, suggest that the increased transistor charge collection at low temperature is a mobility driven phenomenon. Circuit-level RHBD techniques are shown to be very efficient in mitigating the proton- induced SEU at both 300 K and 77 K over the data rates tested. These results suggest that the circuit operating temperature must be carefully considered during component qualification for SEE tolerance and indicate the need for broad-beam heavy-ion testing at low temperatures.

Microbeam measurements and TCAD simulations are used to examine the effects of ion angle of incidence on the charge collected from events occurring in a Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT). The results identify the geometrically driven charge-collection mechanisms that dominate the low LET broad beam SEU response. The deep trench isolation that surrounds the transistor significantly modulates the charge transport and, therefore, the charge collected by the collector. A new way of estimating critical charge, , for upset in SiGe HBT circuits is proposed based on TCAD simulation results and measured broadbeam data.

We investigate transistor-level layout-based techniques for SEE mitigation in advanced SiGe HBTs. The approach is based on the inclusion of an alternate reverse-biased pn junction (n-ring) designed to shunt electron charge away from the sub-collector to substrate junction. The inclusion of the n-ring affects neither the DC nor AC performance of the SiGe HBT and does not compromise its inherent multi-Mrad TID tolerance. The effects of ion strike location and angle of incidence, as well as n-ring placement, area, and bias on charge collection are investigated experimentally using a 36 MeV O2 microbeam. The results indicate that charge shunting through the n-ring can result in up to a 90% reduction in collector collected charge for strikes outside the DT and a 18% reduction for strikes to the emitter center. 3-D transient strike simulations using NanoTCAD are used to verify the experimental observations, as well as shed insight into the underlying physical mechanisms. Circuit implications for this RHBD technique are discussed and recommendations made.

This work draws on experimental and simulation results to derive a generalized SEU response model for bulk SiGe HBTs. The model was validated using published heavy ion and new proton data gathered from high-speed HBT digital logic integrated circuits fabricated in the IBM 5AM SiGe BiCMOS process. Calibrating to heavy ion data was sufficient to reproduce the proton data without further adjustment. The validated model is used to calculate upset event rates for low-earth and geosynchronous orbits under typical conditions.

In this work we present a new circuit-level hardening technique for SEU mitigation in high-speed SiGe BiCMOS digital logic. A reduction in SEU vulnerability is realized through the implementation of an additional storage cell redundancy block to achieve the required decoupling. When compared with latch duplication, current sharing or gated feedback techniques, this method incurs a lower power penalty and no speed penalty. The hardened circuit is implemented in CML and LVL families and circuit simulation models predict significant reduction in the number of upsets compared to the corresponding unhardened versions. The technique is also easy to incorporate into existing designs.

This paper presents a study of the performance degradation in a proton environment of long wavelength infrared (LWIR) HgCdTe detectors. The energy dependence of the Non-Ionizing Energy Loss (NIEL) in HgCdTe provides a framework for estimating the responsivity degradation in LWIR HgCdTe detectors due to on-orbit exposure from protons. Banded detector arrays of different detector designs were irradiated at proton energies of 7, 12, and 63 MeV. These banded detector arrays allowed insight into how the fundamental detector parameters degraded in a proton environment at the three different proton energies. Measured data demonstrated that the detector responsivity degradation at 7 MeV is 5 times larger than the degradation at 63 MeV. Comparison of the responsivity degradation at the different proton energies suggests that the atomic Columbic interaction of the protons with the HgCdTe detector is likely the primary mechanism responsible for the degradation in responsivity at proton energies below 30 MeV.

We investigate the effects of both X-ray and proton irradiation on a novel 200 GHz/90 GHz (npn/pnp) complementary SiGe:C HBT technology. The DC forward mode total dose tolerance of the pnp HBTs is shown to exceed that of the npn HBTs by a significant margin after being subjected to both 63-MeV proton and 10-keV X-ray sources, while the AC characteristics of both devices exhibit no degradation up to X-ray doses as high as 1.8 Mrad(SiO2). Pre- and post-irradiation results from a current feedback operational amplifier implemented in this technology and irradiated up to a dose of 1.8 Mrad(SiO2) are presented, showing no degradation in performance metrics under two low current density bias configurations.

Proton and X-ray irradiation effects are investigated in 0.35 m conventional, annular, and ringed-source radiation-hardening-by-design (RHBD) CMOS devices. Transistors were irradiated with protons at both 300 K and 77 K. Radiation-induced oxide trapped charges in the shallow trench isolation (STI) oxide deplete the p-substrate and effectively shunt the source and drain, inducing off-state leakage. Without the STI, RHBD nFETs exhibit no radiation-induced off-state shunt leakage currents for devices irradiated at both 300 K and 77 K. Conventional 0.35 mum pFETs were not degraded by proton irradiation, since the leakage path cannot be formed in the n-well. A simple CMOS logic inverter shows no degradation in output voltage after proton irradiation for all tested temperature and bias conditions. More advanced 130 nm node nFETs show less TID sensitivity to STI leakage due possibly to the smaller physical STI volume and/or additional doping located on the STI sidewall.

Proton-induced energy deposition in a silicon P-i-N focal plane array is analyzed with Monte Carlo based simulations. These simulations include all physical processes, including events resulting from multiple particles incident on a single pixel, to describe the experimental data accurately. Post-processing of Monte Carlo simulations is done to account for the effects of pile up (multiple hits on a single pixel during one integration time) and non-radiation-induced noise in experiment. The results are compared with experimental data, and demonstrate how direct ionization dominates the cross section, yet fluctuations in dE/dx cause a broad range of energy depositions not addressed by an average LET calculation. An event rate is predicted for a full space proton flux and the dominance of direct ionization is shown and compared to computation using constant LET methods in CREME96. This comparison shows that at lower energies, CREME96 sufficiently predicts the event rate, but at higher energies a high fidelity simulation method is needed to capture the distribution.

This paper presents a SEU hardening approach that uses a dummy collector to reduce charge collection in the main transistor. The dummy collector is obtained using the silicon space between adjacent HBTs. It is obtained without any process modification or area penalty. The simulations are performed for normal and angled strikes. The hardened device shows significant reduction in charge collection due to sharing of diffusive charge collection by the dummy collector. Multiple HBT arrays of regular and hardened HBT are simulated to study the simultaneous charge collection in multiple HBTs. With hardening, charge collection in multiple devices is suppressed considerably for normal and angled strikes as the shared dummy collector collects a large amount of charge.

The radiation tolerance of strained Si/SiGe n-MODFETs is investigated, using 10 keV X-rays, 63 MeV high energy protons, and 4 MeV low energy protons. The effects of radiation exposure on two major device design parameters (LSD and LG) in T-gate Si/SiGe n-MODFETs devices are examined. A strong dependence on source-drain spacing is observed for both the DC and RF characteristics. A drift-diffusion TCAD framework is used for 2-D device simulations. We believe that the low energy protons damage the SiGe/strained-Si/SiGe lattice, leading to partial strain relaxation. The conduction band-offset (CBO) of the strained SiGe/Si heterojunction is lowered leading to higher gate current leakage. The presence of radiation-induced bulk traps in the unrelaxed SiGe layers on the device behavior is also investigated.

The impact of 63.3 MeV proton and 10 keV X-ray irradiation on the DC and AC performance of complementary SiGe HBTs on thick-film SOI is investigated. Proton and X-ray induced changes in the forward and inverse Gummel characteristics, the output characteristics, and avalanche multiplication are reported for both npn and pnp SiGe HBTs, at both room temperature (300 K) and at cryogenic temperatures (down to 30 K). Comparison of room temperature and cryogenic data suggests interface trap formation at two distinct physical locations in the transistors. Experimental data and calibrated TCAD simulations are used to compare the radiation response of both thick-film SOI devices and thin-film SOI SiGe HBTs.

A comprehensive investigation of the performance dependencies of irradiated SiGe precision voltage reference circuits on (1) total ionizing dose (TID), (2) circuit topology, and (3) radiation source is presented. Two different bandgap voltage references were designed using a first-generation (50-GHz) SiGe BiCMOS technology platform, and subsequently exposed to X-rays at doses of 1080 krad(SiO2) and 5400 krad(SiO2). The degradation in circuit performance following X-ray irradiation depends on both the TID level and the chosen circuit topology. Measurement results show that large TID levels can significantly shift the magnitude of the output voltage. Explanations for the observed shifts are provided by utilizing detailed analyses of the two circuit topologies and considering device-to-circuit interactions. The primary factor responsible for the difference in the circuit response before and after irradiation can be attributed to the excess base leakage current in the SiGe HBT. To investigate the impact of radiation source, the circuit topology showing the worst-case degradation from the X-ray experiment was independently exposed to 63-MeV protons at the same effective TID level. A clear source dependence in the circuit response was observed, and possible origins of this behavior are identified.

SiGe HBTs are strong candidates for space communication applications because of their resistance to total dose effects and their overall high performance. However, they seem to be sensitive to single event upsets (SEUs). These devices were designed using deep trench isolation geometry to reduce charge collection due to ion hits outside the active area. Using four electrode (base, emitter, collector, and substrate) IBIC measurements at the Sandia Nuclear Microprobe Facility, we found that the largest fraction of the induced charge occurred on the collector and on the substrate; significantly less induced charge was found on the base electrode, and practically no induced charge was detected on the emitter. These devices showed a very well defined, high charge collection area enclosed by the deep trench. There was a sudden drop of induced charge at the trench but a long tail was present outside of the active area extending several tens of microns. The charge collection mechanisms inside and outside of the deep trench will be discussed and first results of Time Resolved IBIC in SiGe HBTs will be presented.