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Proton-induced SEU in SiGe digital logic at cryogenic temperatures
- Source :
- Solid-State Electronics. 52:1652-1659
- Publication Year :
- 2008
- Publisher :
- Elsevier BV, 2008.
-
Abstract
- We present the first experimental results confirming the increased SEE sensitivity of SiGe digital bipolar logic circuits operating in a 63 MeV proton environment at cryogenic temperatures. A 3× increase in both the error-event and bit-error cross sections is observed as the circuits are cooled from 300 K to 77 K, with error signature analyses indicating corresponding increases in the average number of bits-in-error and error length over data rates ranging from 50 Mbit/s to 4 Gbit/s. Single-bit-errors dominate the proton-induced SEU response at both 300 K and 77 K, as opposed to the multiple-bit-errors seen in the heavy-ion SEU response. Temperature dependent substrate carrier lifetime measurements, when combined with calibrated 2 D DESSIS simulations, suggest that the increased transistor charge collection at low temperature is a mobility driven phenomenon. Circuit-level RHBD techniques are shown to be very efficient in mitigating the proton- induced SEU at both 300 K and 77 K over the data rates tested. These results suggest that the circuit operating temperature must be carefully considered during component qualification for SEE tolerance and indicate the need for broad-beam heavy-ion testing at low temperatures.
- Subjects :
- Materials science
Proton
business.industry
Transistor
Electrical engineering
Carrier lifetime
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Silicon-germanium
law.invention
chemistry.chemical_compound
chemistry
Operating temperature
Single event upset
law
Logic gate
Materials Chemistry
Optoelectronics
Electrical and Electronic Engineering
business
Electronic circuit
Subjects
Details
- ISSN :
- 00381101
- Volume :
- 52
- Database :
- OpenAIRE
- Journal :
- Solid-State Electronics
- Accession number :
- edsair.doi...........013b6f10d8970261c8901e7406b43190