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Single Event Upset Mechanisms for Low-Energy-Deposition Events in SiGe HBTs
- Source :
- IEEE Transactions on Nuclear Science. 55:1581-1586
- Publication Year :
- 2008
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2008.
-
Abstract
- Microbeam measurements and TCAD simulations are used to examine the effects of ion angle of incidence on the charge collected from events occurring in a Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT). The results identify the geometrically driven charge-collection mechanisms that dominate the low LET broad beam SEU response. The deep trench isolation that surrounds the transistor significantly modulates the charge transport and, therefore, the charge collected by the collector. A new way of estimating critical charge, , for upset in SiGe HBT circuits is proposed based on TCAD simulation results and measured broadbeam data.
- Subjects :
- Nuclear and High Energy Physics
Materials science
business.industry
Heterojunction bipolar transistor
Transistor
Electrical engineering
Microbeam
Upset
Silicon-germanium
law.invention
chemistry.chemical_compound
Nuclear Energy and Engineering
chemistry
law
Single event upset
Optoelectronics
Electrical and Electronic Engineering
business
Beam (structure)
Electronic circuit
Subjects
Details
- ISSN :
- 00189499
- Volume :
- 55
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Nuclear Science
- Accession number :
- edsair.doi...........cdbe5f5f8fa9a377f251e2210337ae65