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1. An Ultra-low-Power Integrated Heartbeat Detector for Wearable Sensors

Author: Benoit Larras, Antoine Frappe, Antoine Gautier, Robin Benarrouch, Marine Dael, Institut Supérieur de l'Electronique et du Numérique - Lille (ISEN-Lille), Institut supérieur de l'électronique et du numérique (ISEN)-Université catholique de Lille (UCL), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Laboratoire commun STMicroelectronics-IEMN T2, Institut supérieur de l'électronique et du numérique (ISEN), Microélectronique Silicium - IEMN (MICROE SI - IEMN), and Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)
Subjects: 020205 medical informatics, Heartbeat, business.industry, Computer science, 020208 electrical & electronic engineering, Detector, Electrical engineering, 2-electrode sensing, Wearable computer, Topology (electrical circuits), 02 engineering and technology, Energy consumption, 7. Clean energy, Heartbeat detection, [SPI]Engineering Sciences [physics], CMOS, Integrated circuit design, FD-SOI technology, 0202 electrical engineering, electronic engineering, information engineering, business, Wireless sensor network, Sleep mode
Abstract: International audience; To optimize energy consumption in wearable sensor networks, an efficient scheme is to set the sensors in sleep mode and wake them up to engage communication. However, synchronicity between the sensors needs to be assured by always-on local oscillators. This work proposes a different topology that takes advantage of the heart beat to wake-up wearable sensors. The electrocardiogram (ECG) is detected by two probes and then converted into a pulse signal. Using 28-nm FD-SOI CMOS technology, this solution is implemented on a circuit consuming 19 nW at a 900 mV supply voltage, hence suitable for long term and wearable applications.
Published: 2020
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2. On the distribution of clique-based neural networks for edge AI: [Invited]

Author: Antoine Frappe, Benoit Larras, Microélectronique Silicium - IEMN (MICROE SI - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), European CHIST-ERA JEDAI Program [ANR-19-CHR3-0005-01], Laboratoire commun STMicroelectronics-IEMN T2, ANR-19-CHR3-0005,JEDAI,Event Driven Artificial Intelligence Hardware for Biomedical Sensors(2019), and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: Information privacy, Monitoring, Computer science, 02 engineering and technology, [INFO.INFO-NE]Computer Science [cs]/Neural and Evolutionary Computing [cs.NE], computer.software_genre, News aggregator, [INFO.INFO-AI]Computer Science [cs]/Artificial Intelligence [cs.AI], Intelligent sensor, Robustness (computer science), 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Neural networks circuit, analog, Artificial neural network, business.industry, 020208 electrical & electronic engineering, Energy consumption, Wireless sensor networks, 020202 computer hardware & architecture, clique-based neural networks, Sensor node, mixed-signal circuit, Feature extraction, distributed architecture, Intelligent sensors, [INFO.INFO-ES]Computer Science [cs]/Embedded Systems, business, computer, Wireless sensor network, Neural networks, Computer network
Abstract: International audience; Distributed smart sensors are more and more used in applications such as biomedical or domestic monitoring. However, each sensor broadcasts data wirelessly to the others or to an aggregator, which leads to energy-hungry sensor nodes not ensuring data privacy. To tackle both challenges, this work proposes to distribute the feature extraction and a part of a clique-based neural network (CBNN) in each sensor node. This scheme allows standardizing data at the sensor level, ensuring privacy if the data is intercepted. Besides, a lower number of bits is transmitted, thus limiting the communication overhead. The inherent redundancy of clique-based networks makes them resilient to out-of-range connections, allowing an additional power reduction in the sensor nodes. Compared with a localized CBNN in the aggregator, the distributed structure reduces the inference latency by 28%, the sensor energy consumption by 25% and increases the protocol robustness. The circuit implementation is possible with the use of single-cluster iterative clique-based circuits, and demonstrated for a posture recognition application. To this end, a hardware circuit has been fabricated and performs a classification using 115fJ per synaptic event per neuron in 83ns.
Published: 2020
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3. Heartbeat-based synchronization scheme for the human intranet: modeling and analysis

Author: Ali Moin, Flavien Solt, Jan M. Rabaey, Andreia Cathelin, Andreas Kaiser, Antoine Frappe, Robin Benarrouch, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics [Crolles] (ST-CROLLES), Berkeley Wireless Research Center [Berkeley] (BWRC), University of California [Berkeley], University of California-University of California, École polytechnique (X), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire commun STMicroelectronics-IEMN T2, University of California [Berkeley] (UC Berkeley), University of California (UC)-University of California (UC), and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: Scheme (programming language), Networking and Internet Architecture (cs.NI), Signal Processing (eess.SP), FOS: Computer and information sciences, Intranet, Heartbeat, Computer science, Clock signal, business.industry, Latency (audio), Topology (electrical circuits), Synchronization, Computer Science - Networking and Internet Architecture, Duty-cycled receiver, Synchronization (computer science), FOS: Electrical engineering, electronic engineering, information engineering, Electrical Engineering and Systems Science - Signal Processing, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Body Area Network (BAN), computer, Computer network, Jitter, computer.programming_language
Abstract: Sharing a common clock signal among the nodes is crucial for communication in synchronized networks. This work presents a heartbeat-based synchronization scheme for body-worn nodes. The principles of this coordination technique combined with a puncture-based communication method are introduced. Theoretical models of the hardware blocks are presented, outlining the impact of their specifications on the system. Moreover, we evaluate the synchronization efficiency in simulation and compare with a duty-cycled receiver topology. Improvement in power consumption of at least 26% and tight latency control are highlighted at no cost on the channel availability., Comment: Accepted as conference paper at IEEE ISCAS 2020
Published: 2020
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4. Energy efficient heartbeat-based MAC protocol for WBAN employing body coupled communication

Author: Flavien Solt, Robin Benarrouch, Guillaume Tochou, Oliver Facklam, Antoine Frappe, Andreia Cathelin, Andreas Kaiser, Jan M. Rabaey, École polytechnique (X), STMicroelectronics [Crolles] (ST-CROLLES), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Berkeley Wireless Research Center [Berkeley] (BWRC), University of California [Berkeley], University of California-University of California, Laboratoire commun STMicroelectronics-IEMN T2, Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), University of California [Berkeley] (UC Berkeley), and University of California (UC)-University of California (UC)
Subjects: Medium Access Control (MAC), General Computer Science, Heartbeat, Computer science, Wearable, Energy Efficiency, Time division multiple access, Wearable computer, Communication Protocol, 02 engineering and technology, Synchronization, [SPI]Engineering Sciences [physics], Synchronization (computer science), 0202 electrical engineering, electronic engineering, information engineering, Wireless, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 020203 distributed computing, business.industry, Wireless Sensor Networks (WSN), Node (networking), 020208 electrical & electronic engineering, General Engineering, body area network (BAN), Media access control, lcsh:Electrical engineering. Electronics. Nuclear engineering, Bio-signal, business, Communications protocol, lcsh:TK1-9971, Computer network, Efficient energy use
Abstract: International audience; Wireless Body Area Networks (WBANs) are a fast-growing field fueled by the number of wearable devices developed for countless applications appearing on the market. To enable communication between a variety of those devices, the IEEE 802.15.6 standard was established. However, this standard has some intrinsic limitations in addressing the heterogeneity of the network nodes in terms of activity, data rates (from less than bit/s to multiple Mbit/s), energy availability, form factor, and location on, around or inside the body. To address these concerns, an alternative model is proposed that could serve as an extension of the IEEE 802.15.6 Standard. At its core is an adaptive and low-overhead synchronization scheme based on heartbeat sensing. This forms the base for a TDMA-based (Time Division Multiple Access) Media Access Control (MAC) protocol dedicated to multi-tier networks. While this effort focuses specifically on Capacitive Body-Coupled Communication (C-BCC), other physical layers can be easily incorporated as well. Based on these premises, this paper compares various random-access slot allocation approaches to accommodate the multiple data rates matching the system requirements, while incorporating a duty-cycling strategy anchored by heartbeat detection. This work proposes a novel, flexible, and robust solution, making use of heartbeat synchronization and addressing the corresponding challenges. It efficiently interconnects multiple device types over a wide range of data rates and targets a mesh of stars topology. At the cost of an increased communication latency, the proposed protocol outperforms the IEEE 802.15.4 MAC standard in terms of energy efficiency by a factor of at least 12x in a realistic scenario.
Published: 2020
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5. Distributed Clique-Based Neural Networks for Data Fusion at the Edge

Author: Benoit Larras, Antoine Frappe, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire commun STMicroelectronics-IEMN T2, ANR-18-CE24-0006,LEOPAR,Unité de pré-traitement pour systèmes intégrés à faible énergie(2018), and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: Clique, 0209 industrial biotechnology, Information privacy, Artificial neural network, business.industry, Computer science, 02 engineering and technology, Sensor fusion, [SPI]Engineering Sciences [physics], 020901 industrial engineering & automation, 0202 electrical engineering, electronic engineering, information engineering, Overhead (computing), 020201 artificial intelligence & image processing, Enhanced Data Rates for GSM Evolution, business, Wireless sensor network, Computer network
Abstract: International audience; Distributed smart sensors are more and more used in applications such as biomedical or domestic monitoring. However, each sensor broadcasts data wirelessly to the others or to an aggregator, which leads to energy-hungry sensors not ensuring data privacy. To tackle both challenges, this work proposes to distribute a part of a clique-based neural network in each sensor. This scheme allows standardizing data at the sensor level, ensuring privacy if the data is intercepted. Besides, a lower number of bits is transmitted, thus limiting the communication overhead. The circuit implementation is possible with the use of single-cluster iterative clique-based circuits. To this end, a hardware circuit has been fabricated and performs a classification using 115fJ per synaptic event per neuron in 83ns.
Published: 2020
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6. Evaluation of micro laser sintering metal 3D-printing technology for the development of waveguide passive devices up to 325 GHz

Author: Christophe Gaquiere, Daniel Gloria, C. Belem Goncalves, D. Titz, C. del Rio Bocio, V. Fiorese, Cyril Luxey, Frederic Gianesello, Emmanuel Dubois, Guillaume Ducournau, STMicroelectronics [Crolles] (ST-CROLLES), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Universidad Pública de Navarra [Espagne] = Public University of Navarra (UPNA), Laboratoire de Polytech Nice-Sophia (Polytech'Lab), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Université Côte d'Azur (UCA), Photonique THz - IEMN (PHOTONIQUE THz - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Puissance - IEMN (PUISSANCE - IEMN), Renatech Network, Laboratoire commun STMicroelectronics-IEMN T4, Laboratoire commun STMicroelectronics-IEMN T1, PCMP CHOP, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), Department of Electric and Electronic Engineering of the Public University of Navarra, Université Nice Sophia Antipolis (... - 2019) (UNS), Photonique THz - IEMN (PHOTONIQ THz - IEMN), and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: Materials science, horn antenna, Millimeter wave technology, 3D printing, 02 engineering and technology, waveguide, 01 natural sciences, 7. Clean energy, 3D-Printing, law.invention, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Insertion loss, Selective laser melting, 010306 general physics, Waveguide antenna, Lithography, business.industry, 020206 networking & telecommunications, mmW, Selective laser sintering, Horn antenna, Optoelectronics, THz, Laser sintering LS, Antenna (radio), business, Waveguide, additive manufacturing
Abstract: International audience; In this paper, we propose an assessment up to 325 GHz of Micro Laser Sintering (MLS) metal 3D-Printing technology in order to achieve lightweight and cost-effective millimeter wave (mmW) passive function. We first designed and manufactured a bended WR5 waveguide in order to assess achievable roughness and insertion loss. In a second step, an existing 240 GHz choke horn antenna design, previously manufactured using metal coated Stereo Lithography Apparatus (SLA) and Selective Laser Melting (SLM) technologies, has been prototyped using MLS. Measured performances of the MLS antenna prototype have been benchmarked with SLA and DMLS ones. Achieved performances are promising since without any post processing MLS compete up to 325 GHz with metal coated SLA technology while it enables a metallic part manufactured in a single piece.
Published: 2020
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7. A wide tuning range delay element for event-driven processing of low-frequency signals in 28-nm FD-SOI CMOS

Author: Angel Gonzalez, Antoine Frappe, Andreas Kaiser, Benoit Larras, Philippe Cathelin, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics [Crolles] (ST-CROLLES), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), NP0007428- 2016_07546, European Union with the European Regional Development Fund, ANR-18-CE24-0006-01 LEOPAR, French National Research Agency, Laboratoire commun STMicroelectronics-IEMN T2, ANR-18-CE24-0006,LEOPAR,Unité de pré-traitement pour systèmes intégrés à faible énergie(2018), and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: IoT, Ultra-low-power circuits, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, law.invention, law, Delay, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Digital signal processing, Leakage (electronics), Physics, business.industry, 020208 electrical & electronic engineering, Transistor, Electrical engineering, FD-SOI CMOS, CT-DSP, CMOS, Logic gate, Dynamic demand, business, Voltage, Digital delay
Abstract: This letter presents a widely tunable digital delay element suitable for low-power low-frequency continuous-time digital signal processing systems. The design uses features of the 28-nm fully depleted silicon-on-insulator (FD-SOI) CMOS technology to precisely control currents in the pA range and significantly reduce the leakage power. The measured tuning range is significantly larger than prior art covering more than 3 decades from 30 ns to 100 $\mu \text{s}$ making it suitable for CT-DSP low-frequency filters. At 0.7-V supply voltage, the dynamic power consumption is 15 fJ/event with a residual power consumption due to leakage of 14 pW.
Published: 2020
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8. Thermal Analysis of Ultimately-Thinned-and-Transfer-Bonded CMOS on Mechanically Flexible Foils

Author: Jean-François Robillard, Etienne Okada, Arun Bhaskar, Flavie Braud, Justine Philippe, Emmanuel Dubois, Christine Raynaud, Francois Danneville, Daniel Gloria, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics, Renatech Network, Laboratoire commun STMicroelectronics-IEMN T4, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: Materials science, Silicon, thin film, Silicon on insulator, chemistry.chemical_element, 02 engineering and technology, Substrate (printing), flexible electronics, 01 natural sciences, [SPI]Engineering Sciences [physics], Thermal conductivity, 0103 physical sciences, thermal management, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Thin film, Electrical conductor, SOI, 010302 applied physics, business.industry, CMOS, 021001 nanoscience & nanotechnology, Flexible electronics, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, lcsh:Electrical engineering. Electronics. Nuclear engineering, 0210 nano-technology, business, lcsh:TK1-9971, Polyimide, Biotechnology
Abstract: International audience; Thinned CMOS chips transfer-bonded onto a compliant host substrate remain to date the technology of choice for applications requiring both mechanical flexibility and high frequency operation. However, the use of poorly thermally conductive host substrates raises the problem of thermal management of flexible electronics, a topic poorly addressed in literature. In this letter, we report the analysis of flexible SOI-CMOS chips ultimately-thinned-and-transfer-bonded (UTTB) onto polyimide and copper substrates. While the temperature remains limited to ∼68 • C on the native silicon substrate or after transfer onto a copper host substrate, infrared thermography reveals temperature peaks of up to 118 • C on polyimide. The impact of self-heating in flexible SOI-CMOS is correlated with electrical performance for the three types of substrates. Beyond the property of mechanical flexibility it provides, a copper substrate is shown to slightly strengthen electrostatic integrity while maintaining a thermal landscape close to that of silicon.
Published: 2019
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9. Optimization of deep rib high speed phase modulators on 300mm industrial Si-photonics platform

Author: Emmanuel Dubois, Nathalie Vulliet, Florian Domengie, Sebastien Cremer, Sébastien Jan, Frederic Boeuf, Francoise Baille, Stephane Monfray, STMicroelectronics [Crolles] (ST-CROLLES), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Renatech Network, Laboratoire commun STMicroelectronics-IEMN T4, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: Modulation, Previous generation, Materials science, business.industry, Germanium, Design of experiments, Phase (waves), Silicon photonics, 02 engineering and technology, Modulators, Cutoff frequency, Manufacturing, [SPI]Engineering Sciences [physics], 020210 optoelectronics & photonics, Amplitude, Photonics, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Silicon Doping, business, Waveguides
Abstract: International audience; This paper highlights the optimization of Deep Rib High Speed Phase Modulators for 400G applications thanks to the optimal choice of structure and implants through a Design Of Experiment analysis, including the proposal of a new Deep Rib HSPM with Z-implants. Results show 1,6dB gain in OMA (Optical Modulation of Amplitude) at the same cutoff frequency (fc=[2Pi*RC]-1) compared to the previous generation [1] with optimized vertical implants, and up to 2,15dB gain vs [1] with the new Z-implant Deep Rib device.
Published: 2020
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10. Thermal conductivity of deca-nanometric patterned Si membranes by multiscale simulations

Author: Pier Luca Palla, Evelyne Martin, Jean-François Robillard, Hayat Zaoui, David Lacroix, Fabrizio Cleri, Konstantinos Termentzidis, Stefano Giordano, Maxime Verdier, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique-IEMN (PHYSIQUE-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Acoustique Impulsionnelle & Magnéto-Acoustique Non linéaire - Fluides, Interfaces Liquides & Micro-Systèmes - IEMN (AIMAN-FILMS-IEMN), Laboratoire Énergies et Mécanique Théorique et Appliquée (LEMTA ), Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), IMPACT N4S, ANR-15-IDEX-0004,LUE,Isite LUE(2015), Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Ecole Centrale de Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Laboratoire International associé sur les phénomènes Critiques et Supercritiques en électronique fonctionnelle, acoustique et fluidique (LIA LICS/LEMAC), Ecole Centrale de Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Ecole Centrale de Lille-Université de Lille-Université Polytechnique Hauts-de-France (UPHF)-Université Polytechnique Hauts-de-France (UPHF), Physique - IEMN (PHYSIQUE - IEMN), Acoustique Impulsionnelle & Magnéto-Acoustique Non linéaire - Fluides, Interfaces Liquides & Micro-Systèmes - IEMN (AIMAN-FILMS - IEMN), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), AcknowledgementsCalculations were performed on the facilities of IEMN (clustphy), of IJL-LEMTA (Ermione cluster) and on the computational ressources from GENCI (Grand Equipement National de CalculIntensif) (Grants No. [2014]-x2014097186 and [2016:2017]-A001097600)., Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 (IEMN-DOAE), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon
Subjects: Fabrication, Materials science, Silicon, Monte Carlo method, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, Silicon membranes, Thermal conductivity, 0103 physical sciences, Surface roughness, [NLIN]Nonlinear Sciences [physics], Thin film, ComputingMilieux_MISCELLANEOUS, [PHYS]Physics [physics], 010302 applied physics, Fluid Flow and Transfer Processes, Condensed matter physics, Mechanical Engineering, 021001 nanoscience & nanotechnology, Condensed Matter Physics, [INFO.INFO-MO]Computer Science [cs]/Modeling and Simulation, Membrane, Thermoelectric generator, chemistry, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], 0210 nano-technology, Simulation
Abstract: International audience; The hollowing of silicon membranes to form a lattice of cylindrical holes, also called phononic crystal, has been used by several experimental groups willing to fabricate efficient thermoelectric modules. The idea is to reduce the thermal conductivity without impacting the electronic conductivity. For several a priori identical materials, i.e. thin films containing periodic cylindrical holes, drastically different levels of thermal conductivity reduction have been reported in the literature: from 1–2 W K−1 m−1 to 15–40 W K−1 m−1, i. e. half the thermal conductivity of the plain membrane. These differences may be due to variations in the geometrical patterns, or to the technological processes specific to each group. It is therefore highly desirable to understand which level of reduction can be expected from the basic concept. In this work, we address the question by applying a fully atomistic framework, the approach-to-equilibrium molecular dynamics (AEMD), to study two deca-nanometric patterns used in the literature and reported respectively with a high and low level of thermal conductivity reduction. For both patterns, the thermal conductivity roughly decreases by a factor 2 only compared to the plain membrane. Thanks to Monte Carlo simulations, in agreement with AEMD for the two patterns, we propose that the origin of stronger reductions could be an increase of the surface roughness during the step of hole fabrication.
Published: 2018
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11. Substrate engineering of inductors on SOI for improvement of Q-factor and application in LNA

Author: Jean-François Robillard, Cedric Durand, Flavie Braud, Christophe Gaquiere, Vanessa Avramovic, Arun Bhaskar, Emmanuel Dubois, Justine Philippe, Daniel Gloria, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), STMicroelectronics [Crolles] (ST-CROLLES), Puissance - IEMN (PUISSANCE - IEMN), Renatech Network, Laboratoire commun STMicroelectronics-IEMN T1, Laboratoire commun STMicroelectronics-IEMN T4, PCMP CHOP, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: Materials science, inductors, Silicon on insulator, FOS: Physical sciences, Context (language use), 02 engineering and technology, Applied Physics (physics.app-ph), Systems and Control (eess.SY), Inductor, Noise figure, Electrical Engineering and Systems Science - Systems and Control, 01 natural sciences, Noise (electronics), Capacitance, 010309 optics, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, FOS: Electrical engineering, electronic engineering, information engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Electronic circuit, SOI, laser processing, business.industry, CMOS, 020208 electrical & electronic engineering, Physics - Applied Physics, Electronic, Optical and Magnetic Materials, LNA, membranes, Q factor, Optoelectronics, lcsh:Electrical engineering. Electronics. Nuclear engineering, business, lcsh:TK1-9971, Biotechnology
Abstract: High Q-factor inductors are critical in designing high performance RF/microwave circuits on SOI technology. Substrate losses is a key limiting factor when designing inductors with high Q-factors. In this context, we report a substrate engineering method that enables improvement of quality factors of already fabricated inductors on SOI. A novel femtosecond laser milling process is utilized for the fabrication of locally suspended membranes of inductors with handler silicon completely etched. Such flexible membranes suspended freely on the BOX show up to 92 % improvement in Q factor for single turn inductor. The improvement in Q-factor is reported on large sized inductors due to reduced parallel capacitance which allows enhanced operation of inductors at high frequencies. A compact model extraction methodology has been developed to model inductor membranes. These membranes have been utilized for the improvement of noise performance of LNA working in the 4.9,5.9 GHz range. A 0.1 dB improvement in noise figure has been reported by taking an existing design and suspending the input side inductors of the LNA circuit. The substrate engineering method reported in this work is not only applicable to inductors but also to active circuits, making it a powerful tool for enhancement of RF devices., Comment: 11 pages, 13 figures
Published: 2020
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12. Capacitive body-coupled communication in the 400-500 MHz frequency band

Author: Jan M. Rabaey, Antoine Frappe, Robin Benarrouch, Andreas Kaiser, Andreia Cathelin, Arno Thielens, STMicroelectronics, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN], Universiteit Gent = Ghent University [UGENT], Microélectronique Silicium - IEMN [MICROELEC SI - IEMN], Berkeley Wireless Research Center [Berkeley] [BWRC], Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Universiteit Gent = Ghent University [Belgium] (UGENT), Berkeley Wireless Research Center [Berkeley] (BWRC), University of California [Berkeley], University of California-University of California, Laboratoire commun STMicroelectronics-IEMN T2, Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Ecole Centrale de Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Ghent University [Belgium] (UGENT), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Ecole Centrale de Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Ecole Centrale de Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Universiteit Gent = Ghent University (UGENT), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), University of California [Berkeley] (UC Berkeley), and University of California (UC)-University of California (UC)
Subjects: Computer science, Frequency band, business.industry, Capacitive sensing, 020208 electrical & electronic engineering, Electrical engineering, Body coupled communication, 020206 networking & telecommunications, 02 engineering and technology, Imaging phantom, [SPI]Engineering Sciences [physics], Body area network, Electrode, 0202 electrical engineering, electronic engineering, information engineering, Wireless, Radio frequency, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, ComputingMilieux_MISCELLANEOUS
Abstract: International audience; One approach to enable wireless communication between body-worn nodes is to use capacitive body-coupled communication (CBCC). This technique, which uses capacitive electrodes as transducing elements, has previously been demonstrated at relatively low frequencies (
Published: 2019
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13. Nanothermometry by Means of Scanning Thermal Microscopy: Investigation of Electro-thermal Devices with Embedded Metallic Lines

Author: Hamaoui, G., Pic, A., Zhao, W., Alkurdi, A., Yin, J., Gallois-Garreignot, S., Bugnet, M., Robillard, J.F., Gomès, Séverine, Chapuis, Pierre-Olivier, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Matériaux, ingénierie et science [Villeurbanne] (MATEIS), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), ANR-16-CE09-0023,TIPTOP,Pointes hautement sensibles pour la microscopie thermique à l'échelle nanométrique(2016), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon, and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2019

14. Development of Highly Sensitive Niobium Nitride Resistive Thermal Probes for Nanoscale Thermal Microscopy

Author: Swami, R., Paterson, J., Singhal, D., Julié, G., Le Denmat, S., Motte, J.-F., Alkurdi, A., Yin, J., Robillard, J.F., Chapuis, P.-O., Gomes, S., Bourgeois, Olivier, Thermodynamique et biophysique des petits systèmes (TPS), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Nanofab (Nanofab ), Optique et microscopies (POM), Centre d'Energétique et de Thermique de Lyon (CETHIL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Thermodynamique et biophysique des petits systèmes (NEEL - TPS), Nanofabrication (NEEL - Nanofab), Optique & Microscopies (NEEL - POM), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2019

15. Device for broadband THz spectroscopy of 1-nL-volume samples

Author: Jean-Francois Lampin, Flavie Braud, Theo Hannotte, Melanie Lavancier, Emmanuel Dubois, Romain Peretti, Sergey Mitryukovskiy, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Photonique THz - IEMN (PHOTONIQ THz - IEMN), Renatech Network, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011), Photonique THz - IEMN (PHOTONIQUE THz - IEMN), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), ACKNOWLEDGMENTSThis work was partially supported by: i) the international chair of excellence 'ThOTroV' from region 'Hauts-deFrance', ii) the welcome talent grant 'NeFiStoV' from European metropole of Lille, iii) the 'TeraStoVe' grant from Isite ULNE, iv) the French government through the National Research Agency (ANR) under program PIA EQUIPEX LEAF ANR-11-EQPX-0025 and ExCELSiOR ANR 11-EQPX-0015, and and v) the French RENATECH network on micro and nanotechnologies.
Subjects: Fabrication, Terahertz radiation, [PHYS.PHYS.PHYS-BIO-PH]Physics [physics]/Physics [physics]/Biological Physics [physics.bio-ph], 02 engineering and technology, Broadband communication, 01 natural sciences, 010309 optics, 0103 physical sciences, Broadband, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Spectroscopy, Biology, [PHYS]Physics [physics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, 021001 nanoscience & nanotechnology, Characterization (materials science), Optical waveguides, Broadband antennas, Terahertz pulse, Performance evaluation, Couplings, Optoelectronics, 0210 nano-technology, business, Thz spectroscopy
Abstract: International audience; We report on our recent progress in the development of a device for light-matter interaction enhancement in the full terahertz range for precise spectroscopy of minor-volume samples. The efficient confinement of a broadband terahertz pulse to a few-nL-volume was achieved, opening new perspectives for chemical and biological applications. We discuss modifications in the fabrication process leading to the improvement of our technique, following the detailed characterization of the device performances.
Published: 2019
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16. Towards broadband THz spectroscopy and analysis of sub-wavelength-size biological samples

Author: Melanie Lavancier, Jean Francois Lampin, Yue Bai, Sergey Mitryukovskiy, Emmanuel Dubois, Romain Peretti, Flavie Braud, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Photonique THz - IEMN (PHOTONIQUE THz - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), ACKNOWLEDGMENTSThis work was partially supported by: i) the international chair of excellence 'ThOTroV' from region 'Hauts-deFrance', ii) the welcome talent grant 'NeFiStoV' from European metropole of Lille, iii) the 'TeraStoVe' grant from Isite ULNE, iv) the French government through the National Research Agency (ANR) under program PIA EQUIPEX LEAF ANR-11-EQPX-0025 and ExCELSiOR ANR 11-EQPX-0015, and v) the French RENATECH network on micro and nanotechnologies, Renatech Network, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Microélectronique Silicium - IEMN (MICROE SI - IEMN), and Photonique THz - IEMN (PHOTONIQ THz - IEMN)
Subjects: Materials science, Terahertz radiation, [PHYS.PHYS.PHYS-BIO-PH]Physics [physics]/Physics [physics]/Biological Physics [physics.bio-ph], Physics::Optics, 02 engineering and technology, 01 natural sciences, Sub wavelength, 010309 optics, Time-domain analysis, [SPI]Engineering Sciences [physics], Software, 0103 physical sciences, Broadband, Spectroscopy, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Optimization algorithm, [PHYS.PHYS]Physics [physics]/Physics [physics], business.industry, Ice, Biological system modeling, 021001 nanoscience & nanotechnology, Sample (graphics), Broadband communication, Optoelectronics, [PHYS.PHYS.PHYS-CHEM-PH]Physics [physics]/Physics [physics]/Chemical Physics [physics.chem-ph], 0210 nano-technology, business, Thz spectroscopy
Abstract: International audience; We report on our recent progress toward bio-photonic applications of terahertz time-domain spectroscopy. First, we developed a technique for the confinement of broadband terahertz pulses to a sub-wavelength-volume, and will present its applications to study biological samples. Second, we will discuss the analysis of terahertz time-trace data from bio samples using our Fit@TDS software based on the time-domain optimization algorithm that enables direct fitting of sample parameters. The combination of those (the experimental and the modelling) techniques is a robust tool for terahertz bio-photonics.
Published: 2019
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17. Digital RF transmitter with single-bit ΔΣ M-driven switched-capacitor RF DAC and embedded band filter in 28-nm FD-SOI

Author: Philippe Cathelin, B. Stefanelli, Andreia Cathelin, Razvan-Cristian Marin, Antoine Frappe, Andreas Kaiser, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics [Crolles] (ST-CROLLES), Laboratoire commun STMicroelectronics-IEMN T2, and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: Radio transmitter design, Local oscillator, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, Delta-sigma modulation, 7. Clean energy, law.invention, law, 0202 electrical engineering, electronic engineering, information engineering, Hardware_INTEGRATEDCIRCUITS, Electrical and Electronic Engineering, Hardware_ARITHMETICANDLOGICSTRUCTURES, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Physics, Radiation, business.industry, Electrical engineering, 020206 networking & telecommunications, Filter (signal processing), Condensed Matter Physics, Switched capacitor, [SPI.TRON]Engineering Sciences [physics]/Electronics, Capacitor, CMOS, Radio frequency, business
Abstract: International audience; This paper presents a single-bit RF transmitter based on single-bit switched-capacitor RF digital-to-analog converters (DACs) embedded in an finite-impulse response (FIR) filter (FIR-DACs). The transmitter system comprises a single-bit quadrature delta-sigma modulator (M), a digital mixer, and a 109-tap RF FIR-DAC stage with a single external inductor, combining D-A conversion with discrete-and continuous-time filtering. The on-chip part of the FIR-DAC is built exclusively with CMOS inverters and metal-oxide-metal capacitors, which are implemented in the interconnect layers to propose a compact fully digital solution, suitable for advanced CMOS nodes. A method for canceling redundant switching in the FIR-DAC is proposed to reduce its complexity and power consumption. Combining discrete-and continuous-time filtering, the out-of-band quantization noise of the 1-bit RF signal is strongly attenuated below the level required by emission masks. The RF FIR-DAC prototype is implemented in a 28-nm FD-SOI CMOS technology with ten metal layers and occupies a total active area of only 0.047 mm 2. The overall power consumption is 38 mW at 4.6-dBm peak output power, 900-MHz carrier frequency, and 1-V supply. FD-SOI body bias V t tuning is used to effectively correct mixing clock duty-cycle errors in order to perform precise high-frequency I/Q interleaving, which enables high image and local oscillator rejections. The resulting power consumption, surface, and performance of the measured prototype make the proposed circuits and concepts particularly appropriate for use in emerging Internet of Things (IoT) applications. Index Terms-28-nm FD-SOI, all-digital transmitter, body bias, delta-sigma modulation (M), finite-impulse response filter (FIR), finite-impulse response digital-to-analog converter (FIR-DAC), switched-capacitor (SC) DAC.
Published: 2019
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18. Shining the light to terahertz spectroscopy of nL-volume biological samples

Author: Sergey Mitryukovskiy, Mélanie Lavancier, Flavie Braud, Goedele Roos, Théo Hannotte, Emmanuel Dubois, Jean-François Lampin, Romain Peretti, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Unité de Glycobiologie Structurale et Fonctionnelle UMR 8576 (UGSF), Institut National de la Recherche Agronomique (INRA)-Université de Lille-Centre National de la Recherche Scientifique (CNRS), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Photonique THz - IEMN (PHOTONIQ THz - IEMN), Renatech Network, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011), Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Centre National de la Recherche Scientifique (CNRS)-Université de Lille-Université Polytechnique Hauts-de-France (UPHF)-Ecole Centrale de Lille-Université Polytechnique Hauts-de-France (UPHF)-Institut supérieur de l'électronique et du numérique (ISEN), Unité de Glycobiologie Structurale et Fonctionnelle - UMR 8576 (UGSF), Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Institut National de la Recherche Agronomique (INRA), Photonique THz - IEMN (PHOTONIQUE THz - IEMN), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Université de Lille-Centre National de la Recherche Scientifique (CNRS), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), and This work was supported in part by the International Chair of Excellence 'ThOTroV' from region 'Hauts-de-France,' in part by the Welcome Talent Grant 'NeFiStoV' from the European Metropole of Lille, in part by the 'TeraStoVe' from I-site ULNE, and in part by the French Government through the National Research Agency under Program PIA EQUIPEX ExCELSiOR ANR 11-EQPX-0015.
Subjects: [PHYS]Physics [physics], 0303 health sciences, 03 medical and health sciences, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.PHYS]Physics [physics]/Physics [physics], [PHYS.PHYS.PHYS-BIO-PH]Physics [physics]/Physics [physics]/Biological Physics [physics.bio-ph], 02 engineering and technology, [PHYS.PHYS.PHYS-CHEM-PH]Physics [physics]/Physics [physics]/Chemical Physics [physics.chem-ph], [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], 021001 nanoscience & nanotechnology, 0210 nano-technology, 030304 developmental biology
Abstract: International audience; We present a technique allowing the confinement of a broadband terahertz pulse to a few-nL volume. The method is approved in terahertz time-domain spectroscopy study of biological samples and further perspectives are discussed.
Published: 2019
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19. Scanning Thermal Microscopy: Probing temperature and heat dissipation down to the few-nanometers scale

Author: Guen, Eloïse, Massoud, A.M., Alkurdi, Ali, Lucchesi, Christophe, Lacatena, Valeria, Haras, Maciej, Robillard, J.F., Nefzaoui, E., Bluet, J.M., Vaillon, Rodolphe, Gomès, Séverine, Chapuis, Pierre-Olivier, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), ESIEE Paris, Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon, Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2019

20. Femtosecond laser micromachining of crystalline silicon for ablation of deep macro-sized cavities for silicon-on-insulator applications

Author: Jean-François Robillard, Daniel Gloria, Flavie Braud, Emmanuel Dubois, Justine Philippe, Etienne Okada, Arun Bhaskar, Christophe Gaquiere, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Microélectronique Silicium - IEMN (MICROE SI - IEMN), STMicroelectronics, Puissance - IEMN (PUISSANCE - IEMN), Renatech Network, Laboratoire commun STMicroelectronics-IEMN T4, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)
Subjects: 010302 applied physics, Materials science, Silicon, business.industry, chemistry.chemical_element, Silicon on insulator, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, law.invention, [SPI]Engineering Sciences [physics], Surface micromachining, chemistry, law, Fiber laser, 0103 physical sciences, Optoelectronics, Wafer, Crystalline silicon, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract: We demonstrate the use of femtosecond laser micromachining for ablating macro-sized cavities in crystalline silicon. The method employed is laser milling in which the focused laser beam is raster scanned over the area to be removed. We report the achievement of very high volume ablation rates for the cavity of up to 8.48x106 μm3 s-1. To achieve such high rates, we make use of a high average power fiber laser source of 1030 nm wavelength and variable per pulse energy of up to 100 μJ. By carefully controlling the process variables such as pulse energy, repetition rate and scanner speed, the tradeoffs between micromachining quality and ablation rate are quantified. The developed process is applied on Siliconon-Insulator (SOI) wafers for improving performance of RF devices. By making use of laser removal and an additional step of selective silicon etch using XeF2, handler silicon is removed completely under RF circuits such as SP9T switch. The local removal of silicon under such circuits completely eliminates the losses and non-linearities caused by the coupling of RF signals to the semi-conducting substrate. Small-signal and large-signal RF measurements are performed before and after substrate removal to quantify the performance gain. The obtained performance after substrate removal is better than specialized RF-SOI substrates such as trap-rich SOI. This is of practical significance for next generation wireless technologies like 5G which operate at higher frequencies with stringent specifications. The proposed method is also potentially useful for fabricating membrane based devices in SOI technology such as pressure sensors.
Published: 2019
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21. Artificially-induced anisotropic heat flow in 2D patterned membranes

Author: Didenko, Stanislav, M'Bah, Tierno, Massoud, Antonin, Lacatena, Valeria, Haras, Maciej, Orobtchouk, Regis, Bluet, Jean-Marie, Chapuis, Pierre-Olivier, Dubois, Emmanuel, Robillard, Jean-Francois, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), INL - Spectroscopies et Nanomatériaux (INL - S&N), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Renatech Network, Laboratoire commun STMicroelectronics-IEMN T4, European Project: 338179,EC:FP7:ERC,ERC-2013-StG,UPTEG(2013), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon, Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL)
Subjects: [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2018

22. Demonstration of low-thermal conductivity silicon nano-patterned membranes as a thermoelectric material

Author: Robillard, J.F., M'Bah, Tierno, Didenko, Stanislav, Zhu, Tianqi, Zhou, Di, Yin, Jun, Dubois, Emmanuel, Chapuis, Pierre-Olivier, Monfray, Stephane, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Crolles] (ST-CROLLES), Renatech Network, Laboratoire commun STMicroelectronics-IEMN T4, European Project: 338179,EC:FP7:ERC,ERC-2013-StG,UPTEG(2013), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon
Subjects: [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph]
Abstract: International audience; It is expected that the blooming of the so-called Internet-of-Things (IoT) will depend on the availability of inexpensive, reliable and compact energy harvesters. Thermoelectricity features key advantages of reliability and is complementary to other sources but it’s efficiency is intrinsically limited to a few percent around room temperature and usually relies on harmful materials. Two decades of research on low-dimensionality materials have shown the potential of quantum dots, nanowires, thin films [1] or nano-composite materials towards reduced thermal conductivities and increased thermoelectric efficiency. It has been advocated that silicon thin-films, patterned through a so-called phonon engineering approach [2], could reach competitive thermoelectric power densities [3]. In this work we present recent results of 100 nm thick silicon membranes patterned with a 60 nm pitch holey lattice integrated a series of thermopiles. Integrated Joules heaters are used as a heat sources in order to establish a lateral heat gradient in the membranes plane. We comment on the fabrication and characterization of these devices which are able to generate up to 2mW.cm-² under 45K temperature difference [4,5].
Published: 2018

23. Electronic contribution in heat transfer at metal-semiconductor and metal silicide-semiconductor interfaces

Author: Hamaoui, Georges, Horny, Nicolas, Hua, Zilong, Zhu, Tianqi, Robillard, Jean-François, Fleming, Austin, Ban, Heng, Chirtoc, Mihai, URCA - UFR Sciences exactes et naturelles (URCA UFR SEN), Université de Reims Champagne-Ardenne (URCA), Institut de Thermique, Mécanique, Matériaux (ITheMM), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Renatech Network, European Project: 338179,EC:FP7:ERC,ERC-2013-StG,UPTEG(2013), and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: [PHYS]Physics [physics], [SPI]Engineering Sciences [physics], lcsh:R, lcsh:Medicine, lcsh:Q, lcsh:Science, Article
Abstract: International audience; This work presents a direct measurement of the Kapitza thermal boundary resistance Rth, between platinum-silicon and platinum silicide-silicon interfaces. Experimental measurements were made using a frequency domain photothermal radiometry set up at room temperature. The studied samples consist of ≈50 nm of platinum and ≈110 nm of platinum silicide on silicon substrates with different doping levels. The substrate thermal diffusivity was found via a hybrid frequency/spatial domain thermoreflectance set up. The films and the interfaces between the two layers were characterized using scanning electron microscopy, transmission electron microscopy and energy-dispersive X-ray spectroscopy. X-ray diffraction was also used to determine the atomic and molecular structures of the samples. The results display an effect of the annealing process on the Kapitza resistance and on the thermal diffusivities of the coatings, related to material and interface changes. The influence of the substrate doping levels on the Kapitza resistance is studied to check the correlation between the Schottky barrier and the interfacial heat conduction. It is suggested that the presence of charge carriers in silicon may create new channels for heat conduction at the interface, with an efficiency depending on the difference between the metal’s and substrate’s work functions.
Published: 2018
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24. Low-complexity feature extraction unit for 'Wake-on-Feature' speech processing

Author: Jean Le Bellego, Angel Gonzalez, Benoit Larras, Simon Lecoq, Antoine Frappe, Institut Supérieur de l'Electronique et du Numérique - Lille (ISEN-Lille), Institut supérieur de l'électronique et du numérique (ISEN)-Université catholique de Lille (UCL), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Institut supérieur de l'électronique et du numérique (ISEN), and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: Computer science, business.industry, 020208 electrical & electronic engineering, Feature extraction, Context (language use), Pattern recognition, 02 engineering and technology, Speech processing, Background noise, Modeling and simulation, [SPI]Engineering Sciences [physics], Feature (computer vision), 0202 electrical engineering, electronic engineering, information engineering, Spectrogram, 020201 artificial intelligence & image processing, Artificial intelligence, business, Human voice
Abstract: International audience; In the context of energy-constrained automatic speech recognition, a modeling and simulation tool is presented to evaluate the hardware complexity of a feature extraction unit. The objective is to evaluate the minimal amount of features necessary for voice-activity detection, considering limited hardware resources. The obtained features are fed into a classification engine to evaluate the ability to differentiate human voice from background noise. While keeping a detection accuracy of passwords from a standard data-set at 90%, the study shows that the parameters of the feature extraction components, such as ADC resolution or energy quantization resolution, can be reduced to 8 bits and 6 bits, respectively, considering 8 frequency bands, in order to allow hardware-efficient implementations.
Published: 2018
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25. All-digital transmitter architecture based on two-path parallel 1-bit high pass filtering DACs

Author: Philippe Cathelin, Andreia Cathelin, Fikre Tsigabu Gebreyohannes, Antoine Frappe, Andreas Kaiser, Circuits Intégrés Numériques et Analogiques (CIAN), LIP6, Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics [Crolles] (ST-CROLLES), Laboratoire commun STMicroelectronics-IEMN T2, and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: [INFO.INFO-AR]Computer Science [cs]/Hardware Architecture [cs.AR], Finite impulse response, Computer science, Orthogonal frequency-division multiplexing, 020208 electrical & electronic engineering, Transmitter, Clock rate, time-interleaving, 020206 networking & telecommunications, Data_CODINGANDINFORMATIONTHEORY, 02 engineering and technology, Index Terms-Digital transmitter, Transfer function, parallel DACs, Computer Science::Hardware Architecture, CMOS, high pass FIR DACs, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, High-pass filter, Frequency modulation
Abstract: This paper presents a novel transmitter architecture which is tailored for low power, all-digital, and high speed implementation. It is based on two-path parallel digital-to-analog converters (DAC) which are driven by 180° phase-shifted clocks. The architecture operates in high pass mode and extends the output carrier frequency up to half the DAC clock rate. To decrease the number of analog unit current cells in the converter, a low-pass $\Delta \Sigma $ -modulator is used. Since the modulator also converts the input resolution to 1-bit, an inherently-linear digital-to-analog conversion is realized by embedding filtering in the DAC. Furthermore, the finite impulse response DAC transfer function is designed to cancel the $\Delta \Sigma $ -modulator quantization noise. Simulation results at system level demonstrate the robustness of the architecture against random coefficient mismatches, and its suitability for broadband transmissions. The error vector magnitude of the quadrature output is simulated for up to 15% random coefficient mismatch and it maintains a value below −22 dB even when the input signal bandwidths vary from 20 MHz (64-subcarrier OFDM) to 160 MHz (512-subcarrier OFDM). Experimental results are presented to discuss the validity of the proposed all-digital transmitter architecture and to highlight the challenges of implementing it in advanced CMOS nodes.
Published: 2018
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26. Large-area femtosecond laser ablation of Silicon to create membrane with high performance CMOS-SOI RF functions

Author: Etienne Okada, Christophe Gaquiere, Matthieu Berthomé, Emmanuel Dubois, Justine Philippe, Daniel Gloria, Arun Bhaskar, Jean-François Robillard, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics, Puissance - IEMN (PUISSANCE - IEMN), Laboratoire commun STMicroelectronics-IEMN T4, Renatech Network, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and ACKNOWLEDGMENT This work was supported by: i) the STMicroelectronicsIEMN common laboratory ii) the French government through the National Research Agency (ANR) under program PIA EQUIPEX LEAF ANR-11-EQPX-0025 and iii) the French RENATECH network on micro and nanotechnologies.
Subjects: Materials science, Silicon, Silicon on insulator, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), 01 natural sciences, Femtosecond laser ablation, law.invention, [SPI]Engineering Sciences [physics], law, Etching (microfabrication), 0103 physical sciences, Insertion loss, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, Capacitive coupling, business.industry, Substrate engineering, 021001 nanoscience & nanotechnology, Laser, chemistry, Femtosecond, RF front end module, Optoelectronics, 0210 nano-technology, business
Abstract: International audience; Femtosecond laser processing is a tool of increasing relevance for controlled etching of metals, semiconductors, and dielectrics with minimum collateral damage. We make use of this technique to remove silicon locally from the handler substrate of Silicon-on-Insulator (SOI) dies. By combining laser removal with XeF2 etching, we create thin membranes of SP9T switch, with the handler silicon completely removed underneath. This is done in order to mitigate the losses and non-linear products caused by capacitive coupling to the handler substrate. We demonstrate the improvement of linearity and insertion loss of a switch (Fig. 9 and Fig. 10) by employing the proposed method. This could be of potential interest for future wireless applications like 5G.
Published: 2018
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27. Device for light-matter interaction enhancement in the full THz range for precise spectroscopy of small volume samples

Author: Flavie Braud, Emmanuel Dubois, Romain Peretti, Emilien Peytavit, Jean-Francois Lampin, Sergey Mitryukovskiy, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Photonique THz - IEMN (PHOTONIQ THz - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Renatech Network, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011), Photonique THz - IEMN (PHOTONIQUE THz - IEMN), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), ACKNOWLEDGMENTSThis work was partially supported by: i) the international chair of excellence 'ThOTroV' from region 'Hauts-deFrance', ii) the welcome talent grant NeFiStoV from European metropole of Lille, iii) the French government through the National Research Agency (ANR) under program PIA EQUIPEX LEAF ANR-11-EQPX-0025 and ExCELSiOR ANR 11-EQPX-0015, and iv) the French RENATECH network on micro and nanotechnologies., Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), and Centre National de la Recherche Scientifique (CNRS)-Université de Lille-Université Polytechnique Hauts-de-France (UPHF)-Ecole Centrale de Lille-Université Polytechnique Hauts-de-France (UPHF)-Institut supérieur de l'électronique et du numérique (ISEN)
Subjects: Waveguide (electromagnetism), Materials science, Terahertz radiation, [PHYS.PHYS.PHYS-BIO-PH]Physics [physics]/Physics [physics]/Biological Physics [physics.bio-ph], Refractive index, 02 engineering and technology, 01 natural sciences, Absorption, [SPI]Engineering Sciences [physics], 0103 physical sciences, Dispersion (optics), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, Absorption (electromagnetic radiation), Spectroscopy, ComputingMilieux_MISCELLANEOUS, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, 021001 nanoscience & nanotechnology, Broadband communication, Photonics, Broadband antennas, Volume (thermodynamics), [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Powders, 0210 nano-technology, business
Abstract: International audience; We designed, fabricated, characterized and performed the first experimental uses of a device assembling a waveguide and two antennas. The goal of our device is to confine the broadband pulse of a time-domain spectroscopy setup in the slot of the waveguide with the minimum losses and dispersion and with the thinnest slot. With this device, we aimed at analysis a bio sample of the volume below 200 μ1.
Published: 2018
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28. Performance Evaluation of Silicon Based Thermoelectric Generators Interest of Coupling Low Thermal Conductivity Thin Films and a Planar Architecture

Author: Thierno-Moussa Bah, Stanjen Didenko, Emmanuel Dubois, Jean-François Robillard, Thomas Skotnicki, Stephane Monfray, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics [Crolles] (ST-CROLLES), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Renatech Network, Laboratoire commun STMicroelectronics-IEMN T4, European Project: 338179,EC:FP7:ERC,ERC-2013-StG,UPTEG(2013), and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: 010302 applied physics, Materials science, Silicon, business.industry, [SPI.NRJ]Engineering Sciences [physics]/Electric power, chemistry.chemical_element, 02 engineering and technology, Heat sink, 021001 nanoscience & nanotechnology, Thermal conduction, 7. Clean energy, 01 natural sciences, [SPI]Engineering Sciences [physics], Planar, Thermoelectric generator, Semiconductor, Thermal conductivity, chemistry, 0103 physical sciences, Thermoelectric effect, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business
Abstract: International audience; This study aims to compare a silicon ThermoElectric Generator design (TEG) with a commercial TEG made of BiTe alloy commercialized till recently by Micropelt. The objective is to show that recent advances in heat conduction modulation by silicon planar nanostructures may potentially improve thermoelectric performance of silicon to a competitive level with respect to conventional materials. To that end a planar converter architecture is proposed and modeled by Finite Elements Method and an analytical model based on thermal conductivities reported in the literature. Results show the absence or with a small capacity heat sink. This opens the way to the proposal of TEG based on Si material and compatible with mass production facilities of semiconductor manufacturers.
Published: 2018
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29. Phonon heat conduction in phononic crystal membranes

Author: Massoud, Antonin, Bluet, Jean-Marie, Orobtchouk, Regis, Lacatena, Valeria, Haras, Maciej, Didenko, Stanislav, Bah, Thierno-Moussa, Dubois, Emmanuel, Robillard, J.F., Chapuis, Pierre-Olivier, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Nanophotonique (INL - Photonique), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Laboratoire commun STMicroelectronics-IEMN T4, Renatech Network, European Project: 338179,EC:FP7:ERC,ERC-2013-StG,UPTEG(2013), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon, Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL)
Subjects: [SPI]Engineering Sciences [physics], [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], ComputingMilieux_MISCELLANEOUS
Abstract: International audience; We characterize nanometer-thin suspended silicon membranes in the pristine state or perforated in phononic crystals with periods below 100 nm, by means of scanning thermal microscopy (SThM) and Raman thermometry (RTh). Spatial resolution of SThM is shown to be similar to the one of RTh on these samples, once the air contribution is eliminated. Temperature distributions along the membranes are obtained, but require precise determination of the optical absorption for RTh as the membranes are also photonic objects. We find that the techniques are sensitive to cross-plane and in-plane heat conduction, and that the native oxide on both sides of the membranes cannot be neglected. The perforation depth of the holes is also a key quantity. For instance, the reduction of thermal conductivity in comparison to bulk silicon is 2.5 for a pristine membrane of 60 nm thickness, and limited to 6 for moderately-perforated arrays with pitch equal to thickness. The results are analyzed in light of phonon mean free path computations in complex geometries.
Published: 2018

30. Influence of amorphous layers on the thermal conductivity of phononic crystals

Author: Thierno-Moussa Bah, Konstantinos Termentzidis, Jean-François Robillard, Maxime Verdier, David Lacroix, Evelyne Lampin, Stanislav Didenko, Laboratoire Énergies et Mécanique Théorique et Appliquée (LEMTA ), Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique - IEMN (PHYSIQUE - IEMN), STMicroelectronics [Crolles] (ST-CROLLES), Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), IMPACT N4S, Renatech Network, Laboratoire commun STMicroelectronics-IEMN T4, ANR-15-IDEX-0004,LUE,Isite LUE(2015), European Project: 338179,EC:FP7:ERC,ERC-2013-StG,UPTEG(2013), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Physique-IEMN (PHYSIQUE-IEMN), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon
Subjects: Amorphous silicon, Resistive touchscreen, Materials science, Silicon, chemistry.chemical_element, 02 engineering and technology, Surface finish, 021001 nanoscience & nanotechnology, 01 natural sciences, Amorphous solid, chemistry.chemical_compound, Condensed Matter::Materials Science, Membrane, Thermal conductivity, chemistry, Phase (matter), 0103 physical sciences, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Composite material, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, 0210 nano-technology
Abstract: International audience; The impact of amorphous phases around the holes and at the upper and lower free surfaces on thermal transport in silicon phononic membranes is studied. By means of molecular dynamics and Monte Carlo simulations, we explore the impact of the amorphous phase (oxidation and amorphous silicon), surfaces roughness, and a series of geometric parameters on thermal transport. We show that the crystalline phase drives the phenomena; the two main parameters are (i) the crystalline fraction between two holes and (ii) the crystalline thickness of the membranes. We reveal the hierarchical impact of nanostructurations on the thermal conductivity, namely, from the most resistive to the less resistive: the creation of holes, the amorphous phase around them, and the amorphization of the membranes edges. The surfaces or interfaces perpendicular to the heat flow hinder the thermal conductivity to a much greater extent than those parallel to the heat flow.
Published: 2018
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31. Broadband Terahertz Light-Matter Interaction Enhancement for Precise Spectroscopy of Thin Films and Micro-Samples

Author: Flavie Braud, Jean-Francois Lampin, Emilien Peytavit, Emmanuel Dubois, Romain Peretti, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Photonique THz - IEMN (PHOTONIQ THz - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Renatech Network, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011), Photonique THz - IEMN (PHOTONIQUE THz - IEMN), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: Materials science, Terahertz radiation, Infrared, business.industry, 02 engineering and technology, 021001 nanoscience & nanotechnology, biophotonic, terahertz, time domain spectroscopy, absorption enhancement, laser cutting, 01 natural sciences, optics, Atomic and Molecular Physics, and Optics, Characterization (materials science), Terahertz spectroscopy and technology, 010309 optics, Wavelength, 0103 physical sciences, Optoelectronics, Radiology, Nuclear Medicine and imaging, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Thin film, 0210 nano-technology, Spectroscopy, Absorption (electromagnetic radiation), business, Instrumentation
Abstract: International audience; In biology, molecules and macromolecules such as sugars, proteins, DNA, RNA, etc., are of utmost importance. Detecting their presence as well as getting information on their actual structure is still a challenge in many cases. The vibrational states of such molecules correspond to a spectral range extending from infrared to terahertz. Spectroscopy is used for the detection and the identification of such compounds and their structure. Terahertz spectroscopy of a biosample is challenging for two main reasons: the high terahertz absorption by water molecules in the sample; and the small size of the sample - its volume is usually smaller than the cube of the terahertz wavelength, thus the light-matter interaction is extremely reduced. In this paper, we present the design, fabrication, characterization, and first typical use of a biophotonic device that aims to increase the light?matter interaction to enable terahertz spectroscopy of very small samples over a broad band (0.2-2 THz). Finally, we demonstrate the validity of our approach by time-domain spectroscopy of samples of a few µL.
Published: 2018
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32. Digital complex delta-sigma modulators with highly configurable notches for multi-standard coexistence in wireless transmitters

Author: Razvan-Cristian Marin, Antoine Frappe, Andreas Kaiser, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire commun STMicroelectronics-IEMN T2, and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: Engineering, Optimization problem, business.industry, Frequency band, 020208 electrical & electronic engineering, Pole–zero plot, 020206 networking & telecommunications, 02 engineering and technology, Delta-sigma modulation, [SPI.TRON]Engineering Sciences [physics]/Electronics, Reduction (complexity), Noise, [SPI]Engineering Sciences [physics], Modulation, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Wireless, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business
Abstract: International audience; This paper presents a complex delta-sigma modu-lator (CDSM) designed for integration in a digital transmitter chain targeting multi-standard coexistence with nearby receivers. The use of a DSM has the advantage of increased performance in terms of signal-to-noise-ratio in the band of interest. However, the resulting out-of-band noise becomes an issue for multi-standard coexistence, thus increasing the complexity of the subsequent filtering stage. This constraint could be relaxed in the DSM stage, by placing a complex zero near the frequency band, where a low noise level is needed. This is achieved by cross coupling the in-phase (I) and quadrature (Q) channels, thus obtaining a CDSM. A review of known design methods for CDSM revealed limitations regarding the poles/zeros optimization, and the configurability of the complex zeros placement. The proposed architecture introduces two additional cross couplings from the I and Q quantizers outputs in order to decorrelate the zeros placement and the poles optimization problem. Hence, the improved CDSM can be implemented using existing optimization tools, which reduces considerably the number of iterations and the computational effort. In addition, the resulting modulator can target different coexistence scenarios without the need of redesign, unlike other known methods. Simulation results show a noise level reduction of approximately 20-30-dB near specific frequency bands by the proposed CDSM scheme with respect to standard DSM. Finally, we show an efficient coarse/fine configurability mechanism, which is obtained when introducing additional delays in the cross-coupling paths. Index Terms-Delta sigma modulator (DSM), complex delta sigma modulator (CDSM), finite impulse response (FIR), multi-standard coexistence, digital transmitter.
Published: 2018
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33. Microscale ultrahigh-frequency resonant wireless powering for capacitive and resistive MEMS actuators

Author: Naoto Usami, Akio Higo, Yoshio Mita, Hidehisa Shiomi, Naoyuki Sakamoto, B. Stefanelli, Antoine Frappe, Andreas Kaiser, Julien Bourgeois, The University of Tokyo (UTokyo), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), ANR-16-CE33-0022,ProgrammableMatter,Matériel et logiciel pour créer de la matière programmable(2016), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Capacitive sensing, Feedthrough, Wireless MEMS powering, 02 engineering and technology, [INFO.INFO-SE]Computer Science [cs]/Software Engineering [cs.SE], LC circuit, Inductor, 7. Clean energy, 01 natural sciences, [INFO.INFO-IU]Computer Science [cs]/Ubiquitous Computing, [INFO.INFO-CR]Computer Science [cs]/Cryptography and Security [cs.CR], 0103 physical sciences, Radio frequency, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Resonant mode energy transfer, Instrumentation, Electronic circuit, 010302 applied physics, Microelectromechanical systems, business.industry, Electrostatic actuator Thermal actuator, Metals and Alloys, Electrical engineering, 021001 nanoscience & nanotechnology, Condensed Matter Physics, [INFO.INFO-MO]Computer Science [cs]/Modeling and Simulation, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Amplitude modulation (AM), Ultrahigh frequency (UHF), [INFO.INFO-MA]Computer Science [cs]/Multiagent Systems [cs.MA], RLC circuit, [INFO.INFO-ET]Computer Science [cs]/Emerging Technologies [cs.ET], [INFO.INFO-DC]Computer Science [cs]/Distributed, Parallel, and Cluster Computing [cs.DC], 0210 nano-technology, Actuator, business
Abstract: International audience; This paper presents a versatile chip-level wireless driving method for microelectromechanical system (MEMS) actuators. A MEMS actuator is integrated as an electrical component of a coupled LCR resonant circuit, and it rectifies the energy sent through an ultrahigh-frequency (UHF) radio frequency (RF) wave. Two types of actuators were remotely driven using the proposed method: thermal (bimorph) actuators used as the R component and capacitive (comb-drive) actuators used as the C component of a resonant receiver circuit. We demonstrated the remote actuation of a 13 Ω thermal actuator transferring 7.05 mW power with a power efficiency of 15.8%. This was achieved using coupled 500 μm diameter 5.5-turn planar coil antennas over a distance of 90 μm. When an impedance-matching configuration (Zo = 50 Ω) was used, the efficiency over a distance of 65 μm was measured to be 55.6%, which was 8.2 times greater than that of simple inductor coupling. The proposed method can be applied to future deployment scenarios, where fragile MEMS are placed on top of a system and must directly interface with the environment (thus, being prone to break). The authors propose to fabricate MEMS and energy receiver circuits monolithically on a chip, and place them on another energy transmitter chip. Thereby, the MEMS chip can avoid electrical feedthrough so that (a) the MEMS chip is easily replaceable if it breaks, and (b) the MEMS chip can move beyond wiring cable limitations. Four features are underlined in the article: (1) MEMS itself can rectify the RF energy owing to the fact that the governing equation of the MEMS actuator involves the square of the voltage and/or current, thereby, ensuring higher system-level efficiency than any other RF transceiver circuits using additional rectifying components (e.g., diodes). (2) Both the transmitter and receiver use coils of the same design, whose sizes are equivalent to those of the MEMS actuators (hundreds of micrometers). Moreover, they can be operated at UHF, owing to the much higher self-resonant frequency (fs &gt GHz) when compared to conventional transmitters (fs ≈ MHz). In addition, by using LCR resonant circuits, it is possible to not only (3) increase the transmission efficiency but also (4) multiply the driving voltage of the capacitive MEMS actuator, because of LC resonance. Voltage multiplication is quite useful for electrostatic MEMS operations because the movement is proportional to the square of the voltage across the MEMS capacitance. Comprehensive designs, implementations, and demonstrations of wireless operation are presented in this paper, for both thermal (resistive) and electrostatic (capacitive) actuators. Remote operation includes on–off-keying for MEMS without mechanical resonance and amplitude modulation of sinusoidal signals to stimulate the mechanical resonant frequency of MEMS.
Published: 2018
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34. A fully flexible circuit implementation of clique-based neural networks in 65-nm CMOS: [Invited]

Author: Benoit Larras, Cyril Lahuec, Paul Chollet, Fabrice Seguin, Matthieu Arzel, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Département Electronique (ELEC), Université européenne de Bretagne - European University of Brittany (UEB)-Télécom Bretagne-Institut Mines-Télécom [Paris] (IMT), ANR-18-CE24-0006,LEOPAR,Unité de pré-traitement pour systèmes intégrés à faible énergie(2018), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Université européenne de Bretagne - European University of Brittany (UEB)-Institut Mines-Télécom [Paris] (IMT)-Télécom Bretagne, Lab-STICC_IMTA_CACS_IAS, Laboratoire des sciences et techniques de l'information, de la communication et de la connaissance (Lab-STICC), École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-Université Bretagne Loire (UBL)-IMT Atlantique (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-Université Bretagne Loire (UBL)-IMT Atlantique (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT), Département Electronique (IMT Atlantique - ELEC), IMT Atlantique (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-Université Bretagne Loire (UBL)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-Université Bretagne Loire (UBL)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), and IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique)
Subjects: Analogue integrated circuit, Silicon, Neural Networks, Computer science, 02 engineering and technology, USable, Leakage currents, Synapse, [SPI]Engineering Sciences [physics], iterative circuit structure, [SDV.MHEP.CSC]Life Sciences [q-bio]/Human health and pathology/Cardiology and cardiovascular system, 0202 electrical engineering, electronic engineering, information engineering, Energy effciency, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Neural networks circuit, Electronic circuit, Neurons, Clique, Artificial neural network, business.industry, Complexity theory, 020208 electrical & electronic engineering, analog/mixed-signal circuit, [SPI.TRON]Engineering Sciences [physics]/Electronics, 020202 computer hardware & architecture, clique-based neural networks, classification circuit, CMOS, Hardware and Architecture, Synapses, [SDV.IB]Life Sciences [q-bio]/Bioengineering, State (computer science), Biological neural networks, business, [SPI.SIGNAL]Engineering Sciences [physics]/Signal and Image processing, Computer hardware, Energy (signal processing)
Abstract: International audience; Clique-based neural networks implement low-complexity functions working with a reduced connectivity between neurons. Thus, they address very specific applications operating with a very low-energy budget. However, the implementation in the state of the art is not flexible and a fabricated circuit is only usable in a unique use case. Besides, the silicon area of hardwired circuits grows exponentially with the number of implemented neurons that is prohibitive for embedded applications. This paper proposes a flexible and iterative neural architecture capable of implementing multiple types of clique-based neural networks of up to 3968 neurons. The circuit has been integrated in an ST 65-nm CMOS ASIC and occupies a 0.21-mm 2 silicon surface area. The proper functioning of the circuit is illustrated using two application cases: a keyword recovery application and an electrocardiogram classification. The neurons outputs are updated 83 ns after a stimulation, and a neuron needs an energy of 115 fJ to propagate a change at the input to its output.
Published: 2018
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35. Cost effective laser structuration of optical waveguides on thin glass interposer

Author: Jean-Marc Boucaud, Quentin Hivin, Matthieu Berthomé, Jean-Emmanuel Broquin, Frederic Gianesello, Davide Bucci, Guillaume Ducournau, Folly-Eli Ayi-Yovo, Emmanuel Dubois, Jean-François Robillard, Cedric Durand, STMicroelectronics [Crolles] (ST-CROLLES), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Photonique THz - IEMN (PHOTONIQUE THz - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Laboratoire commun STMicroelectronics-IEMN T4, Renatech Network, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), Photonique THz - IEMN (PHOTONIQ THz - IEMN), and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: Materials science, Fabrication, Silicon photonics, business.industry, polymer optical waveguide, Physics::Optics, 02 engineering and technology, Substrate (electronics), Laser, Waveguide (optics), Atomic and Molecular Physics, and Optics, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, Femtosecond laser, thin glass interposer, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, 020210 optoelectronics & photonics, Optics, law, Etching (microfabrication), Chemical-mechanical planarization, 0202 electrical engineering, electronic engineering, information engineering, Interposer, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, business
Abstract: International audience; In order to enhance electro-optical system-in-package capabilities for silicon photonics, a cost effective fabrication process for optical waveguides integration on thin glass substrate interposer is demonstrated. Firstly, a femtosecond laser ablation coupled with a hydrofluoric acid etching is developed to create micro grooves at the glass surface. Secondly, a dry film lamination followed by chemical mechanical planarization is achieved to define surface optical waveguides by filling the micro channels. Physical characterizations of the fabricated waveguides are performed using optical and scanning electron microscopy. Finally, optical mode profile and loss characterizations confirm the optical functionality of waveguides which prove to be multimodal at 1550 nm.
Published: 2017
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36. Ultra-thin dielectric insertions for contact resistivity lowering in advanced CMOS: Promises and challenges

Author: Yves Morand, Louis Hutin, Donato Kava, Fabrice Nemouchi, Maud Vinet, Magali Gregoire, Emmanuel Dubois, N. Bernier, J. Borrel, Remy Gassilloud, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), University of Texas [El Paso] (UTEP ), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), French Public Authority through NANO, French Public Authority through Equipex [FDSOI11], and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: 010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Applied physics, business.industry, General Engineering, General Physics and Astronomy, Nanotechnology, Insulator (electricity), 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, 01 natural sciences, Engineering physics, [SPI]Engineering Sciences [physics], Semiconductor, CMOS, Electrical resistivity and conductivity, 0103 physical sciences, 0210 nano-technology, business
Abstract: International audience; In this paper, in order to provide a comprehensive overview of the opportunities and limitations of the metal/insulator/semiconductor contacts approach, expected performance based on ideal contact simulations as well as key practical aspects are presented. While the former give us a glimpse of the theoretical potential of this paradigm, mainly to contact nFETs, the latter highlights concerns about the electrical characterization of such contacts along with issues occurring during their physical implementation. (c) 2017 The Japan Society of Applied Physics
Published: 2017
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37. Synthesis and characterization of low work function alkali oxide thin films for unconventional thermionic energy converters

Author: François Morini, V. Giorgis, J.-L. Codron, Jean-François Robillard, Emmanuel Dubois, Xavier Wallart, T. Zhu, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), European Research Council under the European Community ERCEuropean Research Council (ERC) [338179], French RENATECH network, STMicroelectronics-IEMN Common Laboratory, Laboratoire commun STMicroelectronics-IEMN T4, Renatech Network, European Project: 338179,EC:FP7:ERC,ERC-2013-StG,UPTEG(2013), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS), Université de Tours (UT)-Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), and Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN)
Subjects: Materials science, Ultra-high vacuum, Analytical chemistry, Oxide, General Physics and Astronomy, chemistry.chemical_element, Thermionic emission, 02 engineering and technology, 7. Clean energy, 01 natural sciences, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], X-ray photoelectron spectroscopy, 0103 physical sciences, Work function, Thin film, 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, chemistry, Caesium, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business, Current density
Abstract: International audience; In this work, we present the synthesis and the characterization of low work function thin films for Micro Thermionic Converters (MTC). The objective is producing a device operating at relatively low temperature (< 1000 K). We aim at improving the MTC efficiency by reducing the work function of the electrodes and increasing the emitted current density by alkali metal oxides electrodes coating. In particular, in this work, we analyse and compare the performances of two alkali metal oxides: potassium and caesium oxides. Our choice to exploit those materials relies on their low work function and their abundance. For both materials, we present the results on the synthesis of the oxides under high vacuum and controlled temperature. The oxide thin films were characterized by X-ray photoelectron spectroscopy, photoemission, and thermionic emission measurements. By exploiting the latter technique, a quantitative evaluation of the current density, emitted by the heated oxides, is obtained as a function of temperature. Our results demonstrate that it is possible to decrease the silicon work function by almost 3 eV, enabling significant thermionic currents despite relatively low temperatures (below 850 K). Published by AIP Publishing.
Published: 2016
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38. Fabrication of thin-film silicon membranes with phononic crystals for thermal conductivity measurements

Author: Maciej Haras, Jean-François Robillard, Valeria Lacatena, Emmanuel Dubois, Stephane Monfray, Thierno Moussa Bah, Stanislav Didenko, Thomas Skotnicki, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics-IEMN Common Laboratory, European Research CouncilEuropean Research Council (ERC)European Commission [338179], Laboratoire commun STMicroelectronics-IEMN T4, Renatech Network, European Project: 338179,EC:FP7:ERC,ERC-2013-StG,UPTEG(2013), and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: Fabrication, Materials science, Silicon, semiconductor materials measurements, phonons, chemistry.chemical_element, 02 engineering and technology, fabrication, 010402 general chemistry, 01 natural sciences, [SPI]Engineering Sciences [physics], Thermal conductivity, Electrical resistivity and conductivity, Seebeck coefficient, Thermoelectric effect, Electronic engineering, thin film devices, Electrical and Electronic Engineering, Thin film, business.industry, silicon, Thermoelectricity, 021001 nanoscience & nanotechnology, Thermoelectric materials, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, 0210 nano-technology, business
Abstract: Thermoelectricity struggles with the lack of cheap, abundant, and environmentally friendly materials. Silicon could overcome this deficiency by proposing high harvested power density, simplicity, availability, harmlessness, CMOS compatibility, and cost reduction. However, despite its high Seebeck coefficient and electrical conductivity, silicon is an inefficient thermoelectric material due to a high thermal conductivity ( $\kappa $ ). Modern nano-fabrication techniques enable reduction of $\kappa $ in silicon through attenuation of thermal phonons. In this letter, the design and the fabrication of nanostructured material onto $\kappa $ measurement platforms are presented. The proposed fabrication process is versatile and ensures compatibility with CMOS technologies. The proposed devices enable precise $\kappa $ measurement owing to a careful management of thermal losses. Characterization resulted in a two-fold ( $\kappa =59\pm 10$ W/m/K) reduction below bulk value for a 54-nm-thick plain silicon membranes. Further reduction is measured at $\kappa =34.5\pm 7.5$ W/m/K for membranes with phononic crystals.
Published: 2016
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39. Improved performance of flexible CMOS technology using ultimate thinning and transfer bonding

Author: Jean-François Robillard, Emmanuel Dubois, Christophe Gaquiere, Francois Danneville, Daniel Gloria, Justine Philippe, C. Raynaud, Matthieu Berthomé, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Renatech Network, Laboratoire commun STMicroelectronics-IEMN T1, Laboratoire commun STMicroelectronics-IEMN T4, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: 010302 applied physics, Flexibility (engineering), Materials science, Silicon, dBm, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, CMOS integrated circuits, 01 natural sciences, radiofrequency integrated circuits, Power (physics), Stress (mechanics), MOSFET, [SPI]Engineering Sciences [physics], chemistry, CMOS, Electrical resistivity and conductivity, Logic gate, 0103 physical sciences, Electronic engineering, harmonic analysis, 0210 nano-technology, integrated circuit bonding
Abstract: International audience; Based on a simple process referred to as ultimate thinning-and-transfer-bonding (UTTB), this paper shows that the high-frequency performance of advanced CMOS technologies can be combined with mechanical flexibility and transparency. The invariance upon thinning, transfer and flexure of both DC and RF CMOS electrical characteristics is demonstrated. Specific to high power RF applications, the complete elimination of the silicon handler improves the second and third harmonic rejection by 36 and 40 dBm, respectively, when compared to a high resistivity SOI substrate.
Published: 2016
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40. A Digital Delay Line with Coarse/Fine tuning through Gate/Body biasing in 28nm FDSOI

Author: Antoine Frappe, Andreas Kaiser, Laurent Clavier, Ilias Sourikopoulos, Andreia Cathelin, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Ecole nationale supérieure Mines-Télécom Lille Douai (IMT Lille Douai), Institut Mines-Télécom [Paris] (IMT), Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut TELECOM/TELECOM Lille1, Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Renatech Network, Laboratoire commun STMicroelectronics-IEMN T2, and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: Delay calculation, Engineering, business.industry, Dynamic range, Delay element, 020208 electrical & electronic engineering, Delay line oscillator, Biasing, 02 engineering and technology, FDSOI, body-biasing, Digital delay line, [SPI]Engineering Sciences [physics], CMOS, Logic gate, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, digital delay line, business, AND gate
Abstract: International audience; This paper discusses the design and characterization of a programmable digital delay line. The core of the proposed architecture is a thyristor-type delay element featuring the capability for coarse/fine tuning without using any additional hardware. This is made possible by taking advantage of body biasing features available in 28nm FDSOI CMOS. Body biasing offers unique performance characteristics, notably a very low sensitivity to the biasing voltage. The prototype delay line was designed featuring thermometer-code multi-stage activation and gate/body biasing control. A delay range from 560ps to 16.13ns is exhibited for the delay line with a 2GS/s input stream. The unit delay cell exhibits fs/mV sensitivity combined with an order of magnitude larger delay dynamic range and an energy efficiency of only 12.5 fJ/event.
Published: 2016
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41. Considerations on Fermi-depinning, dipoles and oxide tunneling for oxygen-based dielectric insertions in advanced CMOS contacts

Author: Magali Gregoire, Emmanuel Nolot, H. Grampeix, M. Vinet, Fabienne Allain, J.P. Barnes, E. Ghegin, Claude Tabone, Louis Hutin, Philippe Rodriguez, Emmanuel Dubois, Fabrice Nemouchi, Yves Morand, J. Borrel, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics, Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire commun STMicroelectronics-IEMN T4, and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: Materials science, business.industry, Oxide, Insulator (electricity), Dielectric, Atomic layer deposition, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], Semiconductor, chemistry, Electrical resistivity and conductivity, Electronic engineering, Optoelectronics, business, Silicon oxide, Quantum tunnelling
Abstract: International audience; We present experimental and simulated J-V characteristics of Metal/Insulator/Semiconductor (MIS) junctions aiming at improving the contact resistivity for advanced CMOS nodes. We show that an Atomic Layer Deposition (ALD)-based Al2O3 process may induce a native silicon oxide regrowth leading to an additional tunneling resistance in series. A modelling-based analysis of Metal/Insulator/Insulator/Metal (MIIS) contacts, including the potentially beneficial interfacial dipole, provides a new outlook on high-kappa/SiO2 bilayers for low resistivity contacts.
Published: 2016
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42. Multi-standard semi-digital FIR DAC: A design procedure

Author: Andreas Kaiser, Fikre Tsigabu Gebreyohannes, Antoine Frappe, Malaviya National Institute of Technology [Jaipur], Utah Center for Advanced Imaging Research [Salt Lake City] (UCAIR), University of Utah, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: Engineering, Finite impulse response, business.industry, 020208 electrical & electronic engineering, Transistor, Transmitter, 02 engineering and technology, Transfer function, 020202 computer hardware & architecture, law.invention, [SPI]Engineering Sciences [physics], law, 0202 electrical engineering, electronic engineering, information engineering, Baseband, Electronic engineering, Routing (electronic design automation), business, Design methods, Impulse response
Abstract: International audience; A configurable transmitter architecture which enables the integration of the baseband blocks of two recent WiFi standards is presented. The novelty of the architecture is based on flexible finite impulse response digital-to-analog converter whose transfer function can be modified to fit the required transmit masks of the standards being implemented. The design methodology of this configurable FIR DAC is compared and contrasted with a traditional multi-bit digital-to-analog converter design procedure. A discussion of the salient points from circuit implementation perspective is also done in detail. Mainly, the performance metrics that are prioritized for 160MHz IEEE 802.11ac and single carrier IEEE 802.11ad are highlighted; a placement method suited for a FIR DAC is covered and some of the limiting factors associated with the method are also detailed. The architecture and the placement method introduced solve some of the main roadblocks in the implementation of semi-digital FIR DACs with long impulse response.
Published: 2016
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43. Progress and opportunities in high-voltage microactuator powering technology towards one-chip MEMS

Author: Isao Mori, Satoshi Morishita, Yuki Okamoto, Eric Lebrasseur, B. Stefanelli, Andreas Kaiser, Masanori Kubota, Atsushi Hirakawa, Yoshio Mita, The University of Tokyo (UTokyo), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratory for Integrated Micro Mechatronics Systems (LIMMS), The University of Tokyo (UTokyo)-Centre National de la Recherche Scientifique (CNRS), ANR-11-BS03-0005,Smart Blocks,Smart Blocks : une surface modulaire et reconfigurable composée de MEMS pour le transport rapide d'objets fragiles et de produits pharmaceutiques(2011), ANR-16-CE33-0022,ProgrammableMatter,Matériel et logiciel pour créer de la matière programmable(2016), and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: 010302 applied physics, Microelectromechanical systems, Physics and Astronomy (miscellaneous), Computer science, business.industry, 020208 electrical & electronic engineering, General Engineering, Electrical engineering, General Physics and Astronomy, High voltage, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Electrical connection, [SPI]Engineering Sciences [physics], Microactuator, CMOS, Hardware_GENERAL, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, business, Energy source, Voltage, Electronic circuit
Abstract: International audience; In this paper, we address issues and solutions for micro-electro-mechanical-systems (MEMS) powering through semiconductor devices towards one-chip MEMS, especially those with microactuators that require high voltage (HV, which is more than 10 V, and is often over 100 V) for operation. We experimentally and theoretically demonstrated that the main reason why MEMS actuators need such HV is the tradeoff between resonant frequency and displacement amplitude. Indeed, the product of frequency and displacement is constant regardless of the MEMS design, but proportional to the input energy, which is the square of applied voltage in an electrostatic actuator. A comprehensive study on the principles of HV device technology and associated circuit technologies, especially voltage shifter circuits, was conducted. From the viewpoint of on-chip energy source, series-connected HV photovoltaic cells have been discussed. Isolation and electrical connection methods were identified to be key enabling technologies. Towards future rapid development of such autonomous devices, a technology to convert standard 5 V CMOS devices into HV circuits using SOI substrate and a MEMS postprocess is presented. HV breakdown experiments demonstrated this technology can hold over 700 to 1000 V, depending on the layout. (C) 2018 The Japan Society of Applied Physics.
Published: 2018
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44. Thermoelectric Energy Conversion: How Good Can Silicon Be?

Author: François Morini, Jean-François Robillard, Stephane Monfray, Valeria Lacatena, Thomas Skotnicki, Emmanuel Dubois, Maciej Haras, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics-IEMN Common Laboratory, European Research CouncilEuropean Research Council (ERC)European Commission [338179], French RENATECH Network, Laboratoire commun STMicroelectronics-IEMN T4, and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: Materials science, Thermal properties, Silicon, Thin films, chemistry.chemical_element, FOS: Physical sciences, Nanotechnology, [SPI]Engineering Sciences [physics], Thermal conductivity, Energy storage and conversion, Thermoelectric effect, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), General Materials Science, Thin film, Power density, Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, Mechanical Engineering, Materials Science (cond-mat.mtrl-sci), Computational Physics (physics.comp-ph), Condensed Matter Physics, Thermoelectric materials, Simulation and modeling, Cost reduction, Semiconductor, chemistry, Semiconductors, Mechanics of Materials, Electrical properties, Optoelectronics, business, Physics - Computational Physics
Abstract: International audience; Lack of materials which are thermoelectrically efficient and economically attractive is a challenge in thermoelectricity. Silicon could be a good thermoelectric material offering CMOS compatibility, harmlessness and cost reduction but it features a too high thermal conductivity. High harvested power density of 7 W/cm(2) at Delta T= 30 K is modeled based on a thin-film lateral architecture of thermo-converter that takes advantage of confinement effects to reduce the thermal conductivity. The simulation leads to the conclusion that 10 nm thick Silicon has 10 x higher efficiency than bulk. (C) 2015 Elsevier B.V. All rights reserved.
Published: 2016
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45. Physical study by surface characterizations of sarin sensor on the basis of chemically functionalized silicon nanoribbon field effect transistor

Author: Kacem Smaali, Stéphane Lenfant, Thierry Melin, Emmanuel Dubois, D. Guerin, Jean-Pierre Simonato, Dominique Vuillaume, V. Passi, Alexandre Carella, L. Ordronneau, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre de Développement des Technologies Avancées (CDTA), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Département des Technologies des NanoMatériaux (DTNM), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de L'Energie Solaire (INES), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Physique-IEMN (PHYSIQUE-IEMN), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Nanostructures, nanoComponents & Molecules - IEMN (NCM-IEMN), ANRFrench National Research Agency (ANR) [ANR-10-CSOSG-003], French RENATECH network, Renatech Network, Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Physique - IEMN (PHYSIQUE - IEMN), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Nanostructures, nanoComponents & Molecules - IEMN (NCM - IEMN), and ANR-10-SECU-0003,CAMIGAZ,Capteurs autonomes miniatures communicants pour la détection de gaz de combats(2010)
Subjects: Materials science, Silicon, Analytical chemistry, chemistry.chemical_element, FOS: Physical sciences, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Capacitance, law.invention, [SPI]Engineering Sciences [physics], law, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Gas detector, Physical and Theoretical Chemistry, Kelvin probe force microscope, Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, Transistor, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Hysteresis, General Energy, chemistry, Optoelectronics, Field-effect transistor, 0210 nano-technology, business, Volta potential
Abstract: Surface characterizations of an organophosphorus (OP) gas detector based on chemically functionalized silicon nanoribbon field-effect transistor (SiNR-FET) were performed by Kelvin Probe Force Microscopy (KPFM) and ToF-SIMS, and correlated with changes in the current-voltage characteristics of the devices. KPFM measurements on FETs allow (i) to investigate the contact potential difference (CPD) distribution of the polarized device as function of the gate voltage and the exposure to OP traces and, (ii) to analyze the CPD hysteresis associated to the presence of mobile ions on the surface. The CPD measured by KPFM on the silicon nanoribbon was corrected due to side capacitance effects in order to determine the real quantitative surface potential. Comparison with macroscopic Kelvin probe (KP) experiments on larger surfaces was carried out. These two approaches were quantitatively consistent. An important increase of the CPD values (between + 399 mV and + 302 mV) was observed after the OP sensor grafting, corresponding to a decrease of the work function, and a weaker variation after exposure to OP (between - 14 mV and - 61 mV) was measured. Molecular imaging by ToF-SIMS revealed OP presence after SiNR-FET exposure. The OP molecules were essentially localized on the Si-NR confirming effectiveness and selectivity of the OP sensor. A prototype was exposed to Sarin vapors and succeeded in the detection of low vapor concentrations (40 ppm)., Paper and supporting information, J. Phys. Chem. C, 2016
Published: 2016
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46. Modeling of Fermi-level pinning alleviation with MIS contacts: n and pMOSFETs cointegration considerations-Part II

Author: Louis Hutin, J. Borrel, Olivier Rozeau, Sebastien Martinie, Emmanuel Dubois, Magali Gregoire, Maud Vinet, Marie-Anne Jaud, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), French Public Authorities through the NANO Program, French National Research AgencyFrench National Research Agency (ANR) [FDSOI11], ST-LETI Joint Program, Laboratoire commun STMicroelectronics-IEMN T4, Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), and STMicroelectronics [Crolles] (ST-CROLLES)
Subjects: 02 engineering and technology, Ring oscillator, Dielectric, 01 natural sciences, Omega, [SPI]Engineering Sciences [physics], Electrical resistivity and conductivity, 0103 physical sciences, MOSFET, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Ohmic contact, n and pFETs cointegration, 010302 applied physics, Physics, Condensed matter physics, business.industry, Doping, Electrical engineering, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, Semiconductor, ring oscillators (ROs) frequency, Metal/insulator/semiconductor (MIS) contacts, 0210 nano-technology, business
Abstract: In this paper, the insertions of dielectric in metal/insulator/semiconductor contacts are considered via their associated impact on the dc and ac performances. Based on dc output characteristics projections, we found that single insertion and/or single-metal integration schemes are unlikely to result in simultaneously successful Fermi-level pinning alleviation on both n and pFETs. We show that the added $C_{\mathrm { {MIS}}}$ contributes to a significant extra improvement in terms of intrinsic inverter delay. In particular, an optimal configuration consisting of Pt-liner/ p-Si and Zr/TiO2(15A)/n-Si contacts can lead to a ring oscillator frequency higher than that of p and nFETs each flanked by ideal ohmic contacts with $10^{-9}~\Omega \cdot {\mathrm{ cm}}^{2}$ resistivity.
Published: 2016
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47. Modeling of Fermi-level pinning alleviation with MIS contacts: n and pMOSFETs cointegration considerations-Part I

Author: Julien Borrel, Louis Hutin, Olivier Rozeau, Marie-Anne Jaud, Sebastien Martinie, Magali Gregoire, Emmanuel Dubois, Maud Vinet, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), French Public Authorities through the NANO Program, French National Research AgencyFrench National Research Agency (ANR) [FDSOI11], ST-LETI Joint Program, Laboratoire commun STMicroelectronics-IEMN T4, STMicroelectronics [Crolles] (ST-CROLLES), and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: 010302 applied physics, T-WKB approximation, CMOS, T WKB approximation, 02 engineering and technology, 1-D modeling, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, [SPI]Engineering Sciences [physics], nFET and pFET cointegration, 0103 physical sciences, metal/insulator/semiconductor (MIS) contacts, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, 0210 nano-technology, metal/insulator/ semiconductor (MIS) contacts
Abstract: International audience; Aiming at overcoming the Fermi-level pinning (FLP) occurring at the metal/semiconductor interfaces, metal/insulator/semiconductor (MIS) contacts to n-Si and p-Si are usually treated in separate optimization studies, yet with no particular insight on their technological compatibility. In this paper, using 1-D analytical modeling of MIS contacts, it is shown that in order to fully benefit from FLP mitigation on both n- and p-type Si, a single-insertion/single-metallization scheme cannot be considered. In addition, it is demonstrated that associating given numerical values of contact resistivity with MIS contacts results in a thorny problem, since their I-V characteristics are nonsymmetric nonlinear.
Published: 2016
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48. Application-oriented performance of RF CMOS technologies on flexible substrates

Author: Jean-François Robillard, Christophe Gaquiere, A. Lecavelier, Francois Danneville, C. Raynaud, Emmanuel Dubois, Matthieu Berthomé, Daniel Gloria, Justine Philippe, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
Subjects: Materials science, Silicon, chemistry.chemical_element, Silicon on insulator, 02 engineering and technology, flexible electronics, 01 natural sciences, 7. Clean energy, [SPI]Engineering Sciences [physics], 0103 physical sciences, Electronic engineering, 010302 applied physics, Flexibility (engineering), business.industry, CMOS integrated circuits, 021001 nanoscience & nanotechnology, radiofrequency integrated circuits, silicon-on-insulator, Transparency (projection), Integrated injection logic, chemistry, CMOS, Logic gate, Optoelectronics, Radio frequency, integrated circuit bonding, 0210 nano-technology, business
Abstract: International audience; Ultimate-thinning-and-transfer-bonding (UTTB) of RF SOI-CMOS chips is demonstrated on plastic, metal and glass substrates. Beyond process simplicity, UTTB can be tailored to meet specific application requirements like ultra mechanical flexibility, heat dissipation, transparency while retaining same f(T)/f(max) performance and improving harmonic rejection when compared to conventional rigid SOI.
Published: 2015
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49. Ultra-foldable/stretchable wideband RF interconnects using laser ablation of metal film on a flexible substrate

Author: Sofiene Bouaziz, Jean-François Robillard, Emmanuel Dubois, Matthieu Berthomé, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire commun STMicroelectronics-IEMN T4, and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: Materials science, Laser ablation, business.industry, Coplanar waveguide, stretchable, Bend radius, Electrical engineering, meander RF interconnects, mechanically flexible, Conductor, Horseshoe-shape, [SPI]Engineering Sciences [physics], Meander (mathematics), CPW transmission line, Foldable, millimeter-wave, laser ablation, Optoelectronics, Transmission coefficient, business, Polyethylene naphthalate, Electrical conductor
Abstract: International audience; In this paper we demonstrate the feasibility of mechanically flexible and stretchable coplanar waveguide (CPW) transmission lines at millimeter-wave frequencies. Our approach is based on meander horseshoe-shaped CPW line on 125 mu m-thick Polyethylene Naphthalate (PEN) dielectric substrate. The desired meander shape pattern of the conductor is structured using a nanosecond pulsed laser source operating at 351 nm wavelength by the precise patterning of a 1 mu m-thick conductive film deposited on a plastic foil. The cutout is realized by following the outer meander shape path of the structure providing an ultra-flexible/ stretchable interconnect line. An experimental attenuation below 0.12 dB.mm(-1) for a 13 mm length of signal conductor has been obtained at 40 GHz. When submitted to bending on a semi-cylinder of known radius, the measured transmission coefficient show small variations less than 0.05 dB even for bending radius in the centimeter range.
Published: 2015
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50. Semi-digital FIR DAC for low power single carrier IEEE 802.11ad 60GHz transmitter

Author: Antoine Frappe, Fikre Tsigabu Gebreyohannes, Andreas Kaiser, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), ANR-11-INFR-0011, ANR-11-INFR-0011,WENDY,WiGig FlExible TraNsceiver ADvanced SYstem(2011), and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: Engineering, IEEE 802, Finite impulse response, business.industry, 020208 electrical & electronic engineering, Clock rate, Transmitter, Electrical engineering, 020206 networking & telecommunications, 02 engineering and technology, [SPI]Engineering Sciences [physics], 0202 electrical engineering, electronic engineering, information engineering, Baseband, Electronic engineering, Wireless, business, Linear filter, Phase-shift keying
Abstract: International audience; IEEE 802.11ad (WiGig) is an emerging multi-Gb/s wireless standard in the unlicensed 60GHz spectrum. This work presents system level validation of a Single Carrier (SC), QPSK modulated WiGig transmitter based on a semi-digital Finite Impulse Response (FIR) Digital-to-Analog Converter (DAC). The 1.76GS/s complex baseband input signal is upsampled by two to a clock frequency of 3.52GHz. In order to introduce channel shaping and meet the standard requirements, the structure implements a 16 th -order direct-form Root-Raised Cosine (RRC) FIR filter. Transmit mask and EVM requirements are met with a large margin while allowing a 14% random mismatches on the current sources implementing the FIR DAC coefficients.
Published: 2015
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