Improved performance of flexible CMOS technology using ultimate thinning and transfer bonding

International audience; Based on a simple process referred to as ultimate thinning-and-transfer-bonding (UTTB), this paper shows that the high-frequency performance of advanced CMOS technologies can be combined with mechanical flexibility and transparency. The invariance upon thinning, transfer and flexure of both DC and RF CMOS electrical characteristics is demonstrated. Specific to high power RF applications, the complete elimination of the silicon handler improves the second and third harmonic rejection by 36 and 40 dBm, respectively, when compared to a high resistivity SOI substrate.