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Your search keyword '"Levinshtein, Michael"' showing total 204 results
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204 results on '"Levinshtein, Michael"'

1. Nature of the 1/f Noise in Graphene, Direct Evidence for the Mobility Fluctuations Mechanism

Author

Rehman, Adil, Notario, Juan Antonio Delgado, Sanchez, Juan Salvador, Meziani, Yahya Moubarak, Cywiński, Grzegorz, Knap, Wojciech, Balandin, Alexander A., Levinshtein, Michael, and Rumyantsev, Sergey

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

The nature of the low-frequency current fluctuations, i.e. carrier number vs. mobility, defines the strategies for noise reduction in electronic devices. While the 1/f noise in metals has been attributed to the electron mobility fluctuations, the direct evidence is lacking (f is the frequency). Here we measured noise in h-BN encapsulated graphene transistor under the condition of geometrical magnetoresistance to directly assess the mechanism of low-frequency electronic current fluctuations. It was found that the relative noise spectral density of the graphene resistance fluctuations depends non-monotonically on the magnetic field (B) with a minimum at approximately uB=1 (u is the electron mobility). This observation proves unambiguously that the mobility fluctuations are the dominant mechanism of the electronic noise in high-quality graphene. Our results are important for all proposed applications of graphene in electronics and add to the fundamental understanding of the 1/f noise origin in any electronic device., Comment: 23 pages, 3 figures, Noise measurements of h-BN encapsulated graphene transistor under the condition of geometrical magnetoresistance to directly assess the mechanism of low-frequency electronic current fluctuations

Published
2021

5. Randomness and Earth climate variability

Author

Levinshtein, Michael E., Dergachev, Valentin A., Dmitriev, Alexander P., and Shmakov, Pavel M.

Subjects
Physics - Geophysics
Abstract

Paleo-Sciences including palaeoclimatology and palaeoecology have accumulated numerous records related to climatic changes. The researchers have usually tried to identify periodic and quasi-periodic processes in these paleoscientific records. In this paper, we show that this analysis is incomplete. As follows from our results, random processes, namely processes with a single-time-constant (noise with a Lorentzian noise spectrum), play a very important and, perhaps, a decisive role in numerous natural phenomena. For several of very important natural phenomena the characteristic time constants are very similar and equal to (5-8)x10^3 years. However, this value is not universal. For example, the spectral density fluctuations of the atmospheric radiocarbon 14C are characterized by a Lorentzian with time constant 300 years. The frequency dependence of spectral density fluctuations for benthic 18O records contains two Lorentzians with time constans 8000 years and > 105 years., Comment: 12 pages, 7 figurs

Published
2015

14. Temperature dependence of the current gain in power 4H-SiC NPN BJTs

Author

Ivanov, Pavel A., Levinshtein, Michael A., Agarwal, Anant K., Krishnaswami, Sumi, and Palmour, John W.

Subjects
Bipolar transistors -- Design and construction, Silicon carbide -- Electric properties, Business, Electronics, Electronics and electrical industries
Abstract

The dependences of the common-emitter current gain [beta.sub.CE] on the collector current [I.sub.C] are measured at elevated temperatures for 1-kV 30-A 4H-SiC epitaxial emitter n-p-n bipolar junction transistors (BJTs). The minority carrier lifetimes and surface recombination velocity are obtained by the means of the simulation of a model that takes into account the main processes affecting the current gain.

Published
2006

16. 'Paradoxes' of carrier lifetime measurements in high-voltage SiC diodes

Author

Mnatsakanov, Tigran T., Levinshtein, Michael E., Ivanov, Pavel, Palmour, John W., Rumyansev, Sergey L., Singh, Ranbir, and Yurkov, Sergei N.

Subjects
Electric currents -- Research, Semiconductors -- Research, Diodes, Semiconductor -- Research, Business, Electronics, Electronics and electrical industries
Abstract

A general estimation can be made of the carrier lifetime in the base, in high-voltage SiC diodes, using steady-state current-voltage characteristics at high injection levels. The transient time of the switch-on process can also be used for an estimate. Given an estimate of lifetime magnitude, the injection efficiency of the emitter can be evaluated.

Published
2001

17. Generation-recombination noise in Gn/AlGaN heterostructure field effect transistors

Author

Rumyantsev, Serguei L., Pala, Nezih, Shur, Michael S., Borovitskaya, Elena, Dmitriev, Alexander P., Levinshtein, Michael E., Gaska, Remis, Khan, M. Asif, Yang, Jinwei, Hu, Xuhong, and Simin, Grigory

Subjects
Field-effect transistors -- Research, Semiconductor films -- Research, Business, Electronics, Electronics and electrical industries
Abstract

A new study investigates the temperature dependencies of low-frequency noise in heterostructure field-effect transistors.

Published
2001

30. The critical charge density of 4H-SiC thyristors

Author

Levinshtein, Michael E., Palmour, John W., Rumyanetsev, Sergey, and Singh, Ranbir

Subjects
Thyristors -- Research, Silicon-controlled rectifiers -- Research, Power semiconductor devices -- Research, Business, Electronics, Electronics and electrical industries
Abstract

Research shows that the critical charge density of 4H-SiC thyristors is two times ten (super 15) centimeters (super -3) and ten (super 14) centimeters (super -3) at a forward voltage of five and 100 volts and 560 degrees kelvin. Experiments using maximum voltage ramp determine anode current density levels of between three and 7.5 times ten (super 2) angstroms per centimeter squared.

Published
1998

36. Turn-on process in 4H-SiC thyristors

Author

Levinshtein, Michael E., Palmour, John W., Rumyantsev, Sergey L., and Singh, Ranbir

Subjects
Thyristors -- Research, Silicon carbide -- Electric properties, Business, Electronics, Electronics and electrical industries
Abstract

The turn-on performance of 4H-Silicon Carbide (SiC) npnp thyristors are influenced by factors such as critical charge density, residual voltage, spread velocity and the rise time constant of the anode current. A comparative analysis involving similar silicon and Gallium Arsenide thyristors revealed the superiority of SIC in terms of pulsed turn-on performance and rise time.

Published
1997

38. Generation-recombination noise in forward biased 4H-SiC p-n diodes.

Author

Rumyantsev, Sergey L., Dmitriev, Alexander P., Levinshtein, Michael E., Veksler, Dmitry, Shur, Michael S., Palmour, John W., Das, Mrinal K., and Hull, Brett A.

Subjects
BOUNDARY layer noise, BIPOLAR transistors, BIPOLAR integrated circuits, THYRISTORS, SILICON-controlled rectifiers, SPECTRAL energy distribution, FLUCTUATIONS (Physics)
Abstract

Low frequency noise has been studied in forward biased 4H-SiC p+-n diodes at current densities from 10-4 to 10 A/cm2. At small current densities j<=10-3 A/cm2, the spectral noise density SI follows the law SI∝1/f3/2. At 10-3 A/cm2 -2 A/cm2, the generation-recombination (GR) noise predominates. The amplitude of this GR noise nonmonotonically depends on current. At j>=10-2 A/cm2, the 1/f (flicker noise) dominates. It has been shown that the recombination time in the space charge region of the p+-n junction, τR, is about 70 ns. This value is approximately one order of magnitude larger than that reported earlier for SiC p-n structures. A model of GR noise in forward biased p-n junctions has been proposed. The model links the GR noise with fluctuations of the charge state of a trap in the space charge region. [ABSTRACT FROM AUTHOR]

Published
2006
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39. Generation-recombination noise in forward biased 4H-SiC p-n diodes

Author

Dmitriev, Alexander P., Rumyantsev, Sergey L., Levinshtein, Michael E.; Hull, Brett A., Veskler, Dmitry; Das, Mrinal K., and Shur, Michael S.; Palmour, John W.

Subjects
Silicon compounds -- Electric properties, Hydrogen -- Electric properties, Chemical reactions -- Analysis, Physics
Abstract

An investigation on the current and frequency dependences of the low frequency noise conducted in 4H-SiC [p.sup.+]-n junctions in the frequency range of [10.sup.0]-[10.sup.4] Hz at current densities from [10.sup.-4] to [10.sup.1] A/[cm.sup.2]. Results reveal that the recombination time in the space charge region of the [p.sup.+]-n junction, [T.sub.R], is about 70 ns.

Published
2006

43. Low-frequency noise behavior of polysilicon emitter bipolar junction transistors: a review

Author

Deen, M. Jamal, Celik-Butler, Zeynep, Pascal, Fabien, Levinshtein, Michael, Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2), and Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Engineering, business.industry, Bipolar junction transistor, Electrical engineering, Biasing, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Noise (electronics), [SPI.TRON]Engineering Sciences [physics]/Electronics, 0103 physical sciences, MOSFET, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Equivalent circuit, Field-effect transistor, Flicker noise, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Common emitter
Abstract

For many analog integrated circuit applications, the polysilicon emitter bipolar junction transistor (PE-BJT) is still the preferred choice because of its higher operational frequency and lower noise performance characteristics compared to MOS transistors of similar active areas and at similar biasing currents. In this paper, we begin by motivating the reader with reasons why bipolar transistors are still of great interest for analog integrated circuits. This motivation includes a comparison between BJT and the MOSFET using a simple small-signal equivalent circuit to derive important parameters that can be used to compare these two technologies. An extensive review of the popular theories used to explain low frequency noise results is presented. However, in almost all instances, these theories have not been fully tested. The effects of different processing technologies and conditions on the noise performance of PE-BJTs is reviewed and a summary of some of the key technological steps and device parameters and their effects on noise is discussed. The effects of temperature and emitter geometries scaling is reviewed. It is shown that dispersion of the low frequency noise in ultra-small geometries is a serious issue since the rate of increase of the noise dispersion is faster than the noise itself as the emitter geometry is scaled to smaller values. Finally, some ideas for future research on PE-BJTs, some of which are also applicable to SiGe heteorjunction bipolar transistors and MOSFETs, are presented after the conclusions.

Published
2003

46. 12 kV, 1 cm2 SiC GTO Thyristors with Negative Bevel Termination

Author

Zhang, Q. Jon, primary, Agarwal, Anant K., additional, Capell, Craig, additional, Cheng, L., additional, O'Loughlin, Michael J., additional, Burk, Albert A., additional, Palmour, John W., additional, Rumyantsev, Sergey L., additional, Saxena, T., additional, Levinshtein, Michael E., additional, Ogunniyi, A., additional, O'Brien, Heather, additional, and Scozzie, Charles, additional

Published
2012
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50. Low Frequency Noise in 4H-SiC MOSFETs

Author

Rumyantsev, Sergey L., primary, Shur, Michael S., additional, Levinshtein, Michael E., additional, Ivanov, Pavel A., additional, Palmour, John W., additional, Das, Mrinal K., additional, and Hull, Brett A., additional

Published
2009
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