Temperature dependence of the current gain in power 4H-SiC NPN BJTs

The dependences of the common-emitter current gain [beta.sub.CE] on the collector current [I.sub.C] are measured at elevated temperatures for 1-kV 30-A 4H-SiC epitaxial emitter n-p-n bipolar junction transistors (BJTs). The minority carrier lifetimes and surface recombination velocity are obtained by the means of the simulation of a model that takes into account the main processes affecting the current gain.