Generation-recombination noise in forward biased 4H-SiC p-n diodes

An investigation on the current and frequency dependences of the low frequency noise conducted in 4H-SiC [p.sup.+]-n junctions in the frequency range of [10.sup.0]-[10.sup.4] Hz at current densities from [10.sup.-4] to [10.sup.1] A/[cm.sup.2]. Results reveal that the recombination time in the space charge region of the [p.sup.+]-n junction, [T.sub.R], is about 70 ns.