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'Paradoxes' of carrier lifetime measurements in high-voltage SiC diodes

Authors :
Mnatsakanov, Tigran T.
Levinshtein, Michael E.
Ivanov, Pavel
Palmour, John W.
Rumyansev, Sergey L.
Singh, Ranbir
Yurkov, Sergei N.
Source :
IEEE Transactions on Electron Devices. August, 2001, Vol. 48 Issue 8, p1703, 6 p.
Publication Year :
2001

Abstract

A general estimation can be made of the carrier lifetime in the base, in high-voltage SiC diodes, using steady-state current-voltage characteristics at high injection levels. The transient time of the switch-on process can also be used for an estimate. Given an estimate of lifetime magnitude, the injection efficiency of the emitter can be evaluated.

Subjects

Subjects :
Electric currents -- Research
Semiconductors -- Research
Diodes, Semiconductor -- Research
Business
Electronics
Electronics and electrical industries

Details

ISSN :
00189383
Volume :
48
Issue :
8
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.77488162

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