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1. Direct current parallel microdischarges in helium

Author

Dufour, Thierry, Dussart, Remi, Overzet, Lawrence J., Lefaucheux, Philippe, Ranson, Pierre, Lee, J. -B, Mandra, Monali, Goeckner, Matthew, and Sadeghi, Nader

Subjects
Physics - Plasma Physics
Abstract

Parallel Micro Hollow Cathodes Discharges are characterised by electrical and spectroscopic studies and by using an ICCD camera. V-I curves present a hysteresis cycle between Townsend and normal glow regimes. For I d =4-10mA, gas temperature ranges between 300-500{\textdegree}C. When the diameter of a hole decreases, a more significant discharge voltage is needed.

Published
2016

2. RF impedance measurements of DC atmospheric micro-discharges

Author

Overzet, Lawrence J., Jung, D., Mandra, Monali, Goeckner, Matthew, Dufour, Thierry, Dussart, Remi, and Lefaucheux, Philippe

Subjects
Physics - Plasma Physics
Abstract

The available diagnostics for atmospheric micro-plasmas remain limited and relatively complex to implement; so we present a radio-frequency technique for diagnosing a key parameter here. The technique allows one to estimate the dependencies of the electron density by measuring the RF-impedance of the micro-plasma and analyzing it with an appropriate equivalent circuit. This technique is inexpensive, can be used in real time and gives reasonable results for argon and helium DC micro-plasmas in holes over a wide pressure range. The electron density increases linearly with current in the expected range consistent with normal glow discharge behavior.

Published
2016
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3. Direct measurements of the energy flux due to chemical reactions at the surface of a silicon sample interacting with a SF6 plasma

Author

Dussart, Remi, Thomann, Anne-Lise, Pichon, Laurianne E., Bedra, Larbi, Semmar, Nadjib, Lefaucheux, Philippe, Mathias, Jacky, and Tessier, Yves

Subjects
Physics - Plasma Physics
Abstract

Energy exchanges due to chemical reactions between a silicon surface and a SF6 plasma were directly measured using a heat flux microsensor (HFM). The energy flux evolution was compared with those obtained when only few reactions occur at the surface to show the part of chemical reactions. At 800 W, the measured energy flux due to chemical reactions is estimated at about 7 W.cm\^{-2} against 0.4 W.cm\^{-2} for ion bombardment and other contributions. Time evolution of the HFM signal is also studied. The molar enthalpy of the reaction giving SiF4 molecules was evaluated and is consistent with values given in literature., Comment: 3 pages

Published
2008
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5. Evaluation of Bosch processing at cryogenic temperatures

Author

Nos, Jack, Tillocher, T., Lefaucheux, Philippe, Dussart, Rémi, Girard, Aurélie, Cardinaud, Christophe, Boufnichel, Mohamed, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Môle Armoricain de Recherche sur la SOciété de l'information et des usages d'INternet (MARSOUIN), Université de Rennes (UR)-Université de Bretagne Sud (UBS)-Ecole Nationale de la Statistique et de l'Analyse de l'Information [Bruz] (ENSAI)-Université de Brest (UBO)-Institut Mines-Télécom [Paris] (IMT)-Université de Rennes 2 (UR2)-Université Bretagne Loire (UBL)-IMT Atlantique (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT), Laboratoire d'économie et de management de Nantes Atlantique (LEMNA), Institut d'Économie et de Management de Nantes - Institut d'Administration des Entreprises - Nantes (IEMN-IAE Nantes), Université de Nantes (UN)-Université de Nantes (UN)-FR 3473 Institut universitaire Mer et Littoral (IUML), Le Mans Université (UM)-Université d'Angers (UA)-Université de Nantes (UN)-École Centrale de Nantes (ECN)-Université de Bretagne Sud (UBS)-Institut Français de Recherche pour l'Exploitation de la Mer (IFREMER)-Centre National de la Recherche Scientifique (CNRS)-Le Mans Université (UM)-Université d'Angers (UA)-Université de Nantes (UN)-École Centrale de Nantes (ECN)-Université de Bretagne Sud (UBS)-Institut Français de Recherche pour l'Exploitation de la Mer (IFREMER)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), and ANR-20-CE24-0014,PSICRYO,Etude fondamentale des interactions plasma-surface dans les procédés de gravure cryogénique avancés(2020)

Subjects
[PHYS]Physics [physics]
Abstract

Bosch processing is an etching technique extensively used in the semiconductor industry towards the obtention of deep aspect ratio features which are necessary for MEMS and TSV applications [1,2]. The process consists in the repetition of an isotropic etching step using SF6 plasma followed by a C4F8 plasma step to passivate the trench sidewalls in order to achieve anisotropic profiles [2,3]. Although other techniques can be used towards deep silicon etching, such as standard cryoetching and the STiGer process, Bosch process offers less constraints as it is performed at ambient temperature and is very robust [1]. However, the main difficulty of this process is the gradual accumulation of fluorocarbonated species on the reactor sidewalls which leads to process deviations. Subsequently, different solutions have been developed to increase process stability and reduce the occurrence of reactor cleanings such as the development of heater liners on the reactor edges to heat the sidewalls above the condensation temperature of the fluorocarbonated polymers formed during passivation steps [4]. In comparison, cryogenic processes present the advantage of enhanced process stability as the reactive species mainly interact with the cooled substrate due to its cryogenic temperature. However, there is no significant study which attests of the impact of performing Bosch process at cryogenic temperatures and the impact of temperature in general on the etching profiles.In this research study, a given set of Bosch process parameters were performed at different temperatures to evaluate the evolution of the etching profile. It will be shown that Bosch process is effectively temperature dependent and that the necessary C4F8 passivating gas flow can be significantly reduced at cryogenic temperatures towards the obtention of anisotropic profiles (Fig. 1).Figure 1: Comparison of two etching profiles obtained with the same Bosch process parameters at different temperatures (Fig 1.a: T = -100°C and Fig 1.b: T = +20°C).Furthermore, a slight increase of the etch rate is observed at lower temperatures although it strengthens aspect ratio dependent etching (ARDE). A comprehensive study on the influence of temperature on the formation and properties of the flurorocarbonated passivation layer will be shown. Consequently, additional tests will be presented to evaluate whether the reduction of the necessary C4F8 gas flow at lower temperatures effectively results in the extension of process stability.The study was carried out using a cryogenic ICP reactor equipped with an in-situ ellipsometer. The tests were performed on Si coupons with a 1 μm surface SiO2 hard-mask layer. The hard-mask pattern consisted of trenches from 2 to 10 μm wide. These coupons were sticked on SiO2 4” carrier wafers using a specific thermal glue used for cryogenic process tests.This research project is supported by the CERTeM 2020 platform, which provides most of the equipment and funded by the European Union (FEDER fund) as well as the French National Research Agency (ANR PSICRYO fund).References 1. T. Tillocher, J. Nos, G. Antoun, P. Lefaucheux, M. Boufnichel, and R. Dussart, Comparison between Bosch and STiGer Processes for Deep Silicon Etching, Micromachines 12, 1143 (2021).2. M. A. Blauw, T. Zijlstra, and E. van der Drift, Balancing the Etching and Passivation in Time-Multiplexed Deep Dry Etching of Silicon, J. Vac. Sci. Technol. B Microelectron. Nanometer Struct. 19, 2930 (2001).3. F. Laemer, and A. Schilp, Method for Anisotropic Plasma Etching of Substrates, U.S. Patent 5498312A (1996).4. M. Puech, Heating Jacket for Plasma Etching Reactor, and Etching Method Using Same, U.S. Patent 0224178A1 (2005).

Published
2023

7. Atmospheric Plasma DC Source in the Micro Scale Elaborated by Micro-Nanotechnologies

Author

Michaud, Ronan, Iséni, Sylvain, Stolz, Arnaud, Lefaucheux, Philippe, Dussart, Remi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), and Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [SPI.PLASMA]Engineering Sciences [physics]/Plasmas, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

International audience; Plasma micro reactors are in their whole elaborated in clean room by MEMS fabrication techniques. They are usually made on silicon platform and constituted by SiO2 dielectric grown by thermal oxidation and nickel coated by PVD process. Electrical and optical characterizations are the main diagnostics used to determine the properties of the discharge and the robustness of the device. SEM images are also made before and after plasma operation. These DC microdischarges can operate continuously during more than 24 hours in stable regime from 100 Torr up to the atmospheric pressure. In these conditions, a high density of reactive species is produced and can be used for gas, liquid or surface treatment.

Published
2022

8. SF6 Physisorption based cryo-ALE of silicon

Author

Nos, Jack, Antoun, Gaelle, Tillocher, Thomas, Lefaucheux, Philippe, Girard, Aurélie, Cardinaud, Christophe, Dussart, Rémi, Môle Armoricain de Recherche sur la SOciété de l'information et des usages d'INternet (MARSOUIN), Université de Rennes (UR)-Université de Bretagne Sud (UBS)-Ecole Nationale de la Statistique et de l'Analyse de l'Information [Bruz] (ENSAI)-Université de Brest (UBO)-Institut Mines-Télécom [Paris] (IMT)-Université de Rennes 2 (UR2)-Université Bretagne Loire (UBL)-IMT Atlantique (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT), Laboratoire d'économie et de management de Nantes Atlantique (LEMNA), Institut d'Économie et de Management de Nantes - Institut d'Administration des Entreprises - Nantes (IEMN-IAE Nantes), Université de Nantes (UN)-Université de Nantes (UN)-FR 3473 Institut universitaire Mer et Littoral (IUML), Le Mans Université (UM)-Université d'Angers (UA)-Université de Nantes (UN)-École Centrale de Nantes (ECN)-Université de Bretagne Sud (UBS)-Institut Français de Recherche pour l'Exploitation de la Mer (IFREMER)-Centre National de la Recherche Scientifique (CNRS)-Le Mans Université (UM)-Université d'Angers (UA)-Université de Nantes (UN)-École Centrale de Nantes (ECN)-Université de Bretagne Sud (UBS)-Institut Français de Recherche pour l'Exploitation de la Mer (IFREMER)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), and ANR-20-CE24-0014,PSICRYO,Etude fondamentale des interactions plasma-surface dans les procédés de gravure cryogénique avancés(2020)

Subjects
[PHYS]Physics [physics]
Abstract

International audience; Cryogenic Atomic Layer Etching (Cryo-ALE) using C4F8 as a precursor gas has been previously presented as an alternative method to achieve ALE of SiO2. In this process, C4F8 is injected in gas phase during the “chemical modification” step, in order to physisorb on a cooled SiO2 surface. The etching step is then achieved using an Ar plasma with a low energy ion bombardment. The temperature window of this process was between -120°C and -90°C 1,2. A self-limiting etching regime was obtained with a regular etch per cycle (EPC) through several tens of nanometers which demonstrates the process stability without any contamination of the reactor walls. In this paper, we show the results using SF6 molecules as precursors for cryo-ALE of silicon.In 1996, Royer et al. studied the chemisorption of sulfur and fluorine on Si during a simultaneous exposure to SF6 gas and Ne+ ion beam. In this work, they showed by XPS measurements that the fluorine quantity on the Si surface tends to increase as the temperature decreases, for a process window between 20°C and 130°C 3. Therefore, a cryo-ALE study based on SF6 physisorption was carried out to extend the use of this alternative approach to other materials.The work presented in this paper was carried out using a cryogenic ICP reactor equipped with in-situ diagnostics. Mass spectrometry measurements enabled to characterize the SF6 physisorption and its surface residence time at different temperatures. Spectroscopic ellipsometry was used to monitor the etching rate and to characterize the sample surface at the nanoscale during the three process steps: SF6 physisorption, pumping and Ar plasma etching. Tests were performed on SiO2, Si3N4 and p-Si coupons glued on SiO2 6” carrier wafers.SF6 physisorption experiments will first be presented notably to determine the optimal temperature and purging time for the process. Subsequently, cryo-ALE test results on Si, SiO2 and Si3N4 will be shown. These results will finally be compared to the ones obtained previously using C4F8 physisorption.This research project is supported by the CERTeM 2020 platform, which provides most of the equipment and funded by the European Union (FEDER fund) as well as the French National Research Agency (ANR PSICRYO fund).1. Antoun et al., Appl. Phys. Lett. 115, 153109, 20192. Antoun et al., Sci. Rep. 10, 20213. Royer et al., J. Vac. Sci. Technol. A 14, 234–239, 1996

Published
2022

9. Cryo-ALE of Si and SiO2 using SF6 Physisorption

Author

Nos, Jack, Antoun, Gaelle, Tillocher, T., Lefaucheux, Philippe, Dussart, Rémi, Girard, Aurélie, Cardinaud, Christophe, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Môle Armoricain de Recherche sur la SOciété de l'information et des usages d'INternet (MARSOUIN), Université de Rennes (UR)-Université de Bretagne Sud (UBS)-Ecole Nationale de la Statistique et de l'Analyse de l'Information [Bruz] (ENSAI)-Université de Brest (UBO)-Institut Mines-Télécom [Paris] (IMT)-Université de Rennes 2 (UR2)-Université Bretagne Loire (UBL)-IMT Atlantique (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT), Laboratoire d'économie et de management de Nantes Atlantique (LEMNA), Institut d'Économie et de Management de Nantes - Institut d'Administration des Entreprises - Nantes (IEMN-IAE Nantes), Université de Nantes (UN)-Université de Nantes (UN)-FR 3473 Institut universitaire Mer et Littoral (IUML), Le Mans Université (UM)-Université d'Angers (UA)-Université de Nantes (UN)-École Centrale de Nantes (ECN)-Université de Bretagne Sud (UBS)-Institut Français de Recherche pour l'Exploitation de la Mer (IFREMER)-Centre National de la Recherche Scientifique (CNRS)-Le Mans Université (UM)-Université d'Angers (UA)-Université de Nantes (UN)-École Centrale de Nantes (ECN)-Université de Bretagne Sud (UBS)-Institut Français de Recherche pour l'Exploitation de la Mer (IFREMER)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), and ANR-20-CE24-0014,PSICRYO,Etude fondamentale des interactions plasma-surface dans les procédés de gravure cryogénique avancés(2020)

Subjects
[PHYS]Physics [physics]
Abstract

Cryogenic Atomic Layer Etching (Cryo-ALE) using C4F8 as a precursor gas has beenpreviously presented as an alternative method to achieve ALE of SiO2. In this process, C4F8 isinjected in gas phase during the “chemical modification” step, in order to physisorb on a cooledSiO2 surface. The etching step is then achieved using an Ar plasma with a low energy ionbombardment. The temperature window of this process was between -120°C and -90°C 1,2.However, C4F8 injection at cryogenic temperatures does not allow high etching selectivity ofSiO2 over Si and Si3N4 as the deposited CFx passivation layer is not thick enough to efficientlypassivate Si and Si3N4 surfaces. As a result, another gas chemistry has to be tested in order toachieve higher etching selectivity.In 1996, Royer et al. studied the chemisorption of sulfur and fluorine on Si during asimultaneous exposure to SF6 gas and Ne+ ion beam. In this work, they showed by XPSmeasurements that the fluorine quantity on the Si surface tends to increase as the temperaturedecreases, for a process window between 20°C and -130°C 3. Therefore cryo-ALE study basedon SF6 physisorption was carried out to extend the use of this alternative approach to other materials.This work was carried out using a cryogenic ICP reactor equipped with in-situ diagnostics.Mass spectrometry measurements enabled to characterize the SF6 physisorption and its surfaceresidence time at different temperatures. Spectroscopic ellipsometry was used to monitor theetching rate and to characterize the sample surface at the nanoscale during the three processsteps: SF6 physisorption, pumping and Ar plasma etching. Tests were performed on SiO2, Si3N4and p-Si coupons glued on SiO2 6” carrier wafers.SF6 physisorption experiments will first be studied and presented notably to find the optimaltemperature and purging time for the process. Subsequently, cryo-ALE test results on Si, SiO2and Si3N4 will be shown. These results will finally be compared to the ones obtained previouslyusing C4F8 physisorption.This research project is supported by the CERTeM 2020 platform, which provides most of theequipment and funded by the European Union (FEDER fund) as well as the French NationalResearch Agency (ANR PSICRYO fund).1. Antoun et al., Appl. Phys. Lett. 115, 153109, 20192. Antoun et al., Sci. Rep. 10, 20213. Royer et al., J. Vac. Sci. Technol. A 14, 234–239, 1996

Published
2022

10. Fabrication process and first charactesisation of novel silicon-based microplasma reactors

Author

Kouadou, Elane, Stolz, Arnaud, Iséni, Sylvain, Lefaucheux, Philippe, Dussart, Remi, and Iséni, Sylvain

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.GPROC] Engineering Sciences [physics]/Chemical and Process Engineering, [PHYS.PHYS.PHYS-PLASM-PH] Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [SPI.PLASMA] Engineering Sciences [physics]/Plasmas, [SPI.FLUID] Engineering Sciences [physics]/Reactive fluid environment, [PHYS.PHYS.PHYS-CHEM-PH] Physics [physics]/Physics [physics]/Chemical Physics [physics.chem-ph]
Abstract

To answer new challenges such as the development of original deposition methods, a new design of silicon-based microplasma reactors with a through silicon via (TSV) was developed. Based on a previous version of Micro Hallow Cathode Discharge (MHCD) [1], the novelty of this work lies in the backside processing of the microreactor to open the cavity and create a gas flow in the hole. This was performed using the patented STiGer etching process developed at the GREMI laboratory [2] to obtain an anisotropic 300 μm deep TSV (Fig.1 a)). Electrical and optical diagnostics were conducted in helium microplasma for different pressures. So far, the MHCD with a TSV proved themselves more durable and capable of sustaining higher current than the previous version [1]. Although, a so-called “self-pulsing regime” [3] is observed below a certain current threshold Fig.1 b), a steady glow discharge following a normal regime is obtained at both high and atmospheric pressure. This is because the TSV enhances considerably the size of the cathode, which gives more surface to the plasma to expand. Electrical and spectroscopic characterizations have been carried out and compared to the results obtained in a closed cavity. Figure 1: a) Design of the microreactor, b) V-I characteristics in He with a 1 MΩ ballast resistor. Acknowledgement: This work is supported through the ANR project PlasBoNG. (ANR-20-CE09-0003). The CERTeM 2020 platform has provided most of the equipment necessary to prepare the microreactors. [1] R. Michaud et al., Plasma Sources Sci. Technol 27, 025005, (2018) [2] T. Tillocher et al., J. Micromech. Microeng 21, 085005, (2011) [3] V. F e l i x et al., Plasma Sources Sci. Technol 25, 025021, (2016)

Published
2022

12. Physical mechanisms involved in silicon based plasma microreactors operating in DC

Author

Dussart, Remi, Michaud, Ronan, Stolz, Arnaud, Iséni, Sylvain, Aubry, Olivier, Lefaucheux, Philippe, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Association of Asia-Pacific Physical Societies and Division of Plasma Physics, and Iséni, Sylvain

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.GPROC] Engineering Sciences [physics]/Chemical and Process Engineering, [PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [PHYS.PHYS.PHYS-PLASM-PH] Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [SPI.FLUID]Engineering Sciences [physics]/Reactive fluid environment, [SPI.PLASMA]Engineering Sciences [physics]/Plasmas, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.PLASMA] Engineering Sciences [physics]/Plasmas, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, [SPI.FLUID] Engineering Sciences [physics]/Reactive fluid environment, [PHYS.PHYS.PHYS-CHEM-PH]Physics [physics]/Physics [physics]/Chemical Physics [physics.chem-ph], [PHYS.PHYS.PHYS-CHEM-PH] Physics [physics]/Physics [physics]/Chemical Physics [physics.chem-ph]
Abstract

International audience; Introduced in the mid 90ies[1], Micro-Hollow Cathode Discharges (MHCD) have the ability to operate stably in DC at atmospheric pressure while remaining in non equilibrium regime. This property makes them very interesting for chemistry and local treatment [2].Due to their dimensionsand their large surface to volume ratio, the produced microplasma remains cold and operates in normal regime provided the cathode area is not fully utilized [3]. Microdischarges on silicon substrates wereintroduced by J. G. Eden’s group [4]. Silicon processing used for microelectronic devices offers many opportunities to design new, original and efficient devices to produce high density microplasmas.At GREMI, microreactors are fabricated from a silicon wafer in a clean room facility, using many different process steps including lithography, deposition, etching,... A schematic showing a microreactor and the electrical circuit is given in figure 1a. The microreactor consists of two nickel electrodes separated by a 8 μm thick thermal SiO2layer. The diameter of the cavity is typically between 50 and 150 μm. The cavity depth is of the order of few tens ofμm. An example of a single microplasma operating in Ar is shown in figure1b.(a)(b)Figure 1 : (a) schematic of a microdischarge developped at GREMI (b) Single microdischarge operating in ArgonIn the first version of microreactors, the silicon surface was used as a cathode. In this particular case, p-type silicon can interact with the plasma and can be used as a photodetector as reported in [5]. However, we showedthat the silicon surface was severely damaged by the ion bombardment, which significantly reduces the lifetime of the microdevice. The physical mechanisms responsible for the degradation of the microreactor are reported in [6]. To enhance the robustness and lifetime of the microreactor, the silicon cathode can be covered by a metallic thin layer (e.g. nickel) as shown in figure 1(a). In this case, the system loses the ability to detect light, but the microplasma is much more stable. V-I characteristics obtained in Argon with a 150μm diameter single cavity reactor are given in figure 2(a) for different pressures. At 500 and 750 Torr, the so-called self-pulsing regime [7] is obtained at low current. At these pressures, the voltage, when stabilized (I > 0,3 mA), hardly increases with current, which shows that the microdischarge operates in quasi-normal regime. At lower pressure (< 300 Torr), no self-pulsingregime is observed, but the discharge voltage increases with current (abnormal regime). This behavior at lower pressure favors the ignition of microdischarge arrays [2]. An example of an array containing 27 microdischarges operating in Ar is shown in figure 2(b).(a)(b)Figure 2 : (a) V-I characteristics of 150 μm diameter single microplasma at different pressures.(b) Array of 27 microplamas operating in ArDifferent geometries and arrangements have been investigated. Gas temperature measurements of the neutrals were carried out by optical emission spectroscopy in He and Ar microplasmas[8]. In Ar, the gas temperature reaches 850 K for a current as high as 350 μA. In the same conditions in helium, the gas temperature remains at 350K. This very different behavior is attributed to the higherthermal conductivity of helium gas. This results was confirmed by SEM observations performed after 24 hours of operation of microdischarge in helium and in argon. The operation in helium did not cause any significant damage of the cavity whereas surface sputtering was clearly identifiedonthe surface of the cavity operating in argon. References[1] K.H. Schoenbach et al., Appl. Phys. Lett. 68 13 (1996)[2] J. G. Eden et al. IEEE Trans. Plasma Sci., 41(4), 661(2013)[3] T. Dufour et al., Appl. Phys. Lett. 9371508 (2008)[4] J.G. Eden et al., J. Phys. D: Appl. Phys. 362869–77 (2003)[5] N. P. Ostrom and J. G. Eden, Appl. Phys. Lett. 87, 141101 (2005)[6] R. Michaud et al.Plasma Sources Sci. Technol. 27 025005 (2018)[7] A. Rousseau and X. Aubert J. Phys. D: Appl. Phys.39 1619–22 (2006)[8]S. Iseniet al. Plasma Sources Sci Technol 28065003(2019)

Published
2021

13. Nanoscale cryogenic process for highly selective etch of Si3N4 over Si

Author

Antoun, Gaelle, Tillocher, Thomas, Lefaucheux, Philippe, Girard, Aurélie, Cardinaud, Christophe, Faguet, Jacques, Maekawa, Kaoru, Zhang, Du, kim, hojin, wang, mingmei, Dussart, Rémi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), and Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.PLASMA]Engineering Sciences [physics]/Plasmas, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2021

14. Atomic layer etching of Gallium nitride (GaN) using SF6/Ar plasmas

Author

Hamraoui, Lamiae, Antoun, Gaëlle, Tillocher, Thomas, Lefaucheux, Philippe, Dussart, Rémi, Boufnichel, Mohamed, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), and Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.PLASMA]Engineering Sciences [physics]/Plasmas, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2021

17. Cryogenic etching applied to next generation interconnects

Author

Dussart, Rémi, Tillocher, Thomas, Lefaucheux, Philippe, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), and MRS

Subjects
[SPI.PLASMA]Engineering Sciences [physics]/Plasmas, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2021

18. Bulk Titanium Micromachining using Deep Reactive Ion Etching

Author

Ettouri, Rim, Tillocher, Thomas, Lefaucheux, Philippe, Boutaud, Bertrand, Dussart, Rémi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), and MISTIC

Subjects
[PHYS]Physics [physics], DRIE, bulk micromachining, [PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], titanium, deep reactive ion etching, biomedical
Abstract

National audience; Over the past three decades, deep reactive ion etching (DRIE) has emerged as a promising technique for the fabrication of microtechnological devices. Successful etching depends on understanding the physico-chemical mechanisms involved and overcoming a series of challenges. Although this technology was originally developed for semiconductor manufacturing, it has shown great promise in other material-processing applications including bulk titanium etching. Titanium has been widely used as a biomedical material due to the excellent biocompatibility properties and biostability which results from the spontaneous formation of an oxide layer in air or blood. It has also proven to be a remarkably interesting material for bulk micromachining. So far, however, little work has been done to explore deep titanium etching.The current work details efforts to develop high-aspect-ratio bulk titanium etching processes for the design of microelectromechanical systems (MEMS). Reactive ion etching (RIE) using chlorine/fluorine gases and positive photoresist mask permit etch depths of up to several hundreds of microns. Our research is based on the application of titanium micromachining technology to the creation of biomedical devices. Among the advantages resulting from the overlap between the medical field and that of microfabrication are the reduction of costs, the miniaturization and the improvement of systems properties.

Published
2020

19. MEMS based nanofluidics device for the study of the nonlinear dynamics associate with the geochemical processes

Author

Kulsreshath, Mukesh, Stolz, Arnaud, Lefaucheux, Philippe, Mercury, Lionel, Dussart, Remi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Institut des Sciences de la Terre d'Orléans - UMR7327 (ISTO), Bureau de Recherches Géologiques et Minières (BRGM) (BRGM)-Observatoire des Sciences de l'Univers en région Centre (OSUC), Institut national des sciences de l'Univers (INSU - CNRS)-Observatoire de Paris, Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences de l'Univers (INSU - CNRS)-Observatoire de Paris, Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences de l'Univers (INSU - CNRS)-Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Biogéosystèmes Continentaux - UMR7327, and Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences de l'Univers (INSU - CNRS)-Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS)-Bureau de Recherches Géologiques et Minières (BRGM) (BRGM)-Observatoire des Sciences de l'Univers en région Centre (OSUC)

Subjects
[SPI.PLASMA]Engineering Sciences [physics]/Plasmas, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

International audience; To understand the evolution of man-impacted hydrosystems with the Earth Sciences, MEMS based nanofluidics devices were prepared. This paper presents the detailed different fabrication steps used for the preparation of successful nanofluidics devices.

Published
2019

20. Robust atmospheric pressure plasma source fabricated by microfabrication techniques

Author

Michaud, Ronan, Stolz, Arnaud, Iséni, Sylvain, Aubry, Olivier, Lefaucheux, Philippe, Dussart, Remi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), and Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [SPI.FLUID]Engineering Sciences [physics]/Reactive fluid environment, [SPI.PLASMA]Engineering Sciences [physics]/Plasmas, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

National audience; Micro hollow cathode discharges (MHCD) operating in DC close to atmospheric pressure in different gases are produced on silicon platforms. Microplasmas were optically and electrically characterized. The micro reactors were also analyzed after operation by SEM observations. Stability enhancement allowed tests of a new geometry that allowed a higher current and power (up to 1 W per microdischarge).

Published
2019

21. Combined analysis methods for investigating titanium and nickel surface contamination after plasma deep etching.

Author

Ettouri, Rim, Tillocher, Thomas, Lefaucheux, Philippe, Boutaud, Bertrand, Fernandez, Vincent, Fairley, Neal, Cardinaud, Christophe, Girard, Aurélie, and Dussart, Rémi

Subjects
PLASMA etching, SURFACE contamination, X-ray photoelectron spectroscopy, TITANIUM, NICKEL-titanium alloys, ETCHING techniques
Abstract

Plasma etching techniques can result in damage and contamination of materials, which, if not removed, can interfere with further processing. Therefore, characterisation of the etched surface is necessary to understand the basic mechanisms involved in the etching process and enable process control and cleaning procedures to be developed. A detailed investigation by means of the combined use of scanning electron microscopy coupled with energy‐dispersive X‐ray spectrometry (SEM/EDS), X‐ray photoelectron spectroscopy (XPS) and optical microscopy (OM) has been carried out on deep titanium trenches etched by plasma. This innovative approach has provided a further insight into the microchemical structure of the surface contamination layer on both the titanium and the nickel hard mask surfaces. The described experiments were conducted on 25 to 100‐μm wide trenches, first etched in bulk titanium by an optimised Cl2/SF6/O2‐based inductively coupled plasma process, through an electroplated nickel hard mask. The results allow to identify chlorine, fluorine and carbon as the main contaminating agents of the nickel mask and to associate three oxidation states around the etched trenches highlighting certain specific aspects related to the passivation mechanism. These observations reinforce the scientific relevance of the combined use of complementary optical and imaging analytical techniques. [ABSTRACT FROM AUTHOR]

Published
2022
Full Text
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22. Atomic Layer Etching at cryogenic temperature

Author

Antoun, Gaëlle, antoun, gaelle, Lefaucheux, Philippe, Tillocher, Thomas, Dussart, Remi, yamazaki, kumiko, Yatsuda, Koichi, Faguet, Jacques, Maekawa, Kaoru, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Université d'Orléans (UO), Tokyo Electron Limited, Tokyo Electron (TEL), and TEL Technology Center, America, LLC

Subjects
[SPI]Engineering Sciences [physics], [PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

23. The role of SiF4 physisorption in silicon cryoetching

Author

Antoun, Gaëlle, Tillocher, Thomas, Lefaucheux, Philippe, Dussart, Remi, Cardinaud, Christophe, Girard, Aurelie, yamazaki, kumiko, Yatsuda, Koichi, Faguet, Jacques, Maekawa, Kaoru, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN), Tokyo Electron Limited, Tokyo Electron (TEL), and TEL Technology Center, America, LLC

Subjects
[SPI]Engineering Sciences [physics], [PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

24. Atomic Layer Etching at low substrate temperature

Author

Antoun, Gaëlle, Lefaucheux, Philippe, Tillocher, Thomas, Dussart, Remi, yamazaki, kumiko, Yatsuda, Koichi, Faguet, Jacques, Maekawa, Kaoru, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Université d'Orléans (UO), Tokyo Electron Limited, Tokyo Electron (TEL), and TEL Technology Center, America, LLC

Subjects
[SPI]Engineering Sciences [physics], [PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

25. Analysis of mechanisms involved in cryogenic ALE

Author

Antoun, Gaëlle, Tillocher, Thomas, Lefaucheux, Philippe, Dussart, Remi, yamazaki, kumiko, Yatsuda, Koichi, Faguet, Jacques, Maekawa, Kaoru, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Université d'Orléans (UO), Tokyo Electron Limited, Tokyo Electron (TEL), and TEL Technology Center, America, LLC

Subjects
[SPI]Engineering Sciences [physics], [PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

26. Plasma processes applied to SiO2 cryo-atomic layer etching

Author

Antoun, Gaëlle, Dussart, Remi, Lefaucheux, Philippe, Tillocher, Thomas, Shigeru, Tahara, yamazaki, kumiko, Yatsuda, Koichi, Faguet, Jacques, Maekawa, Kaoru, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Université d'Orléans (UO), Tokyo Electron Miyagi Limited, Tokyo Electron Limited, Tokyo Electron (TEL), and TEL Technology Center, America, LLC

Subjects
[SPI]Engineering Sciences [physics], [PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

27. Cryogenic process for Atomic Layer Etching

Author

Antoun, Gaëlle, Tillocher, Thomas, Lefaucheux, Philippe, Dussart, Remi, yamazaki, kumiko, Yatsuda, Koichi, Faguet, Jacques, Maekawa, Kaoru, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Université d'Orléans (UO), Tokyo Electron Limited, Tokyo Electron (TEL), and TEL Technology Center, America, LLC

Subjects
[SPI]Engineering Sciences [physics], [PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

28. Neutral gas temperature in silicon based DC MHCD operated in various gases near atmospheric pressure

Author

Iséni, Sylvain, Michaud, Ronan, Lefaucheux, Philippe, Sretenovic, Goran, Schulz-von Der Gathen, Volker, Dussart, Remi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), University of Belgrade [Belgrade], Ruhr-Universität Bochum [Bochum], and Iséni, Sylvain

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.PLASMA]Engineering Sciences [physics]/Plasmas, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], [SPI.PLASMA] Engineering Sciences [physics]/Plasmas, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MECA.THER] Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph]
Abstract

International audience; Micro hollow gas discharges (MHCD) have been on high interest to produce highly ionized gas geometries have been developed to produce micro-cavities, MEMS fabrication technologies offer several advantages. For instance, a silicon (Si) based MHCD allows for reducingsignificantly the electrode gap (8 µm SiO2 layer) and the cavity size (typically from 50 µm to 200 µm diameter, 30 µm depth) [2,3]. Operated in DC at pressure ranges from 2.104 Pa to 105 Pa, the plasma ignites in the cavity in the so-called normal regime. Transition to theabnormal regime leads to an expansion of the plasma out of the cavity. While Si-based DC MHCD were used to suffer from their short lifetime, recent advances on the MHCD design allow for extending their lifetime over several days of operation [4]. This study focuses on the accurate measurement of the gas temperature in and out the cavity, operated in different regimes, by means of space resolved optical emission spectroscopy.Two approaches are applied depending on the gas mixture (He, Ar, N2): either by studying the profile of resonant atomic lines taking in to account the Van der Waals broadening or with the determination of the N2(C-B) rotational temperature. Limitations of the latter approach will be discussed specifically. Heat transfer and temperature gradient will be discussed with regard to the geometry and the material properties of the present MHCD design.1. K. H. Schoenbach and K. Becker, Eur. Phys. J. D 70, 29 (2016).2. L. Schwaederlé, M. K. Kulsreshath, L. J. Overzet, P. Lefaucheux, T. Tillocher, and R. Dussart, J. Phys. Appl. Phys. 45, 065201 (2012).3. C. H. Sillerud, P. D. D. Schwindt, M. Moorman, B. T. Yee, J. Anderson, N. B. Pfeifer, E. L. Hedberg, and R. P. Manginell, Phys. Plasmas 24, 033502 (2017).4. R. Michaud, V. Felix, A. Stolz, O. Aubry, P. Lefaucheux, S. Dzikowski, V. Schulz-von der Gathen, L. J. Overzet, and R. Dussart, Plasma Sources Sci. Technol. 27, 025005 (2018).

Published
2019

29. Spectroscopic study of the neutral gas temperature of silicon based DC MHCD in various gases close to atmospheric pressure

Author

Iséni, Sylvain, Michaud, Ronan, Lefaucheux, Philippe, Schulz-Von Der Gathen, Volker, Sretenovic, Goran, Dussart, R., Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Ruhr-Universität Bochum [Bochum], and University of Belgrade [Belgrade]

Subjects
[PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [SPI.PLASMA]Engineering Sciences [physics]/Plasmas, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

30. Si-based Micro Hollow Cathode Discharges: from Fabrication to Application

Author

Michaud, Ronan, Iseni, Sylvain, Stolz, Arnaud, Aubry, Olivier, Lefaucheux, Philippe, Dussart, Remi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), and Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS)

Subjects
stomatognathic diseases, [PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], health care facilities, manpower, and services, [SPI.FLUID]Engineering Sciences [physics]/Reactive fluid environment, education, [SPI.PLASMA]Engineering Sciences [physics]/Plasmas, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SDV.IB]Life Sciences [q-bio]/Bioengineering, health care economics and organizations
Abstract

Oral; International audience

Published
2019

31. Low-k material cryoetch using high boiling point organic compounds to reduce plasma induced damage

Author

Chanson, Romain, Tillocher, Thomas, Lefaucheux, Philippe, Dussart, Remi, Zhang, Liping, De Marneffe, Jean-Francois, Shen, Peng, Maekawa, Kaoru, Yatsuda, Koichi, Shigeru, Tahara, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Université d'Orléans (UO), IMEC (IMEC), Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven), Air Liquide Laboratories, TEL Technology Center, America, LLC, Tokyo Electron (TEL), and Tokyo Electron Miyagi Limited

Subjects
[SPI]Engineering Sciences [physics], [PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

32. The role of SiF4 physisorption in the cryogenic etching process of silicon

Author

Antoun, Gaëlle, Lefaucheux, Philippe, Tillocher, Thomas, Dussart, Remi, Shigeru, Tahara, yamazaki, kumiko, Yatsuda, Koichi, Faguet, Jacques, Maekawa, Kaoru, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Université d'Orléans (UO), Tokyo Electron Miyagi Limited, Tokyo Electron Limited, Tokyo Electron (TEL), and TEL Technology Center, America, LLC

Subjects
[SPI]Engineering Sciences [physics], [PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

33. Plasma properties of DC silicon based micro hollow cavity discharge (MHCD) operating in various gases - a spectroscopic study

Author

Iséni, Sylvain, Michaud, Ronan, Lazzaroni, Claudia, Lefaucheux, Philippe, Schulz-von Der Gathen, Volker, Sretenovic, Goran, Dussart, Remi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des Sciences des Procédés et des Matériaux (LSPM), Université Paris 13 (UP13)-Institut Galilée-Université Sorbonne Paris Cité (USPC)-Centre National de la Recherche Scientifique (CNRS), Ruhr-Universität Bochum [Bochum], University of Belgrade [Belgrade], CNRS INSIS PEPS Ingénierie Verte MiCaDEAU, Dotation jeune chercheur CNRS INSIS, and Iséni, Sylvain

Subjects
[PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [PHYS.PHYS.PHYS-PLASM-PH] Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.PLASMA]Engineering Sciences [physics]/Plasmas, [SPI.PLASMA] Engineering Sciences [physics]/Plasmas, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

International audience; Taking advantage of MEMS fabrication technologies, silicon (Si) based MHCD allow reducing significantly the electrode gap (8µm SiO2 layer) and the cavity size (50 to 200µm diameter, 30µm depth). Operated in DC at pressure ranges from 104 to 105Pa, the plasma ignites in the cavity and operates in the normal or abnormal regime. Although Si-based MHCD operating in DC used to suffer from their short lifetime, recent advances on the design allow for extending their lifetime [1]. This study focuses on the measurement of the gas temperature in and out the cavity by means of space resolved optical emission spectroscopy. Two approaches are applied depending on the gas mixture (He, Ar, N2, O2, H2O): either by studying the profile of resonant atomic lines or with the determination of the N2(C-B) rotational temperature. Limitations of the latter approach will be discussed specifically. In addition, the electron density and the electric field value within the cavity have been investigated. [1] R. Michaud et. al., PSST, 27, 025005 (2018).

Published
2018

34. Study of long lifetime DC microdischarges on silicon elaborated by MEMS fabrication techniques

Author

Michaud, Ronan, Stolz, Arnaud, Iséni, Sylvain, Aubry, Olivier, Lefaucheux, Philippe, Dzikowski, Sebastian, Schulz-Von Der Gathen, Volker, Pitchford, Leanne, Dussart, Rémi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Ruhr-Universität Bochum [Bochum], LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), and Université Fédérale Toulouse Midi-Pyrénées

Subjects
[PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [SPI.PLASMA]Engineering Sciences [physics]/Plasmas, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

35. Étude par spectroscopie d'émission de la température du gaz à l'intérieur et au voisinage d'une micro-cavité plasma (MHCD)

Author

Iséni, Sylvain, Michaud, Ronan, Lefaucheux, Philippe, Sretenovic, Goran, Schulz-Von Der Gathen, V, Dussart, R., Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), University of Belgrade [Belgrade], and Ruhr-Universität Bochum [Bochum]

Subjects
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [SPI.PLASMA]Engineering Sciences [physics]/Plasmas, ComputingMilieux_MISCELLANEOUS
Abstract

National audience

Published
2018

36. Optimisation et packaging de microplasmas sur silicium

Author

Michaud, Ronan, Stolz, Arnaud, Aubry, Olivier, Lefaucheux, Philippe, Dussart, Remi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), and Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

37. INTRODUCTION AU PROCÉDÉ DE GRAVURE CRYOGÉNIQUE DU SILICIUM

Author

Antoun, Gaëlle, Tillocher, Thomas, Lefaucheux, Philippe, Dussart, Remi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), and Centre National de la Recherche Scientifique (CNRS)-Université d'Orléans (UO)

Subjects
[SPI]Engineering Sciences [physics], [PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

38. Cryogenic processes for silicon deep etching, low-K materials and atomic layer etching

Author

Dussart, Rémi, Tillocher, Thomas, Lefaucheux, Philippe, Yatsuda, Koichi, Maekawa, Kaoru, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), and Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.PLASMA]Engineering Sciences [physics]/Plasmas, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

39. Optimization and packaging of microdischarges on silicon

Author

Michaud, Ronan, Stolz, Arnaud, Iseni, Sylvain, Aubry, Olivier, Lefaucheux, Philippe, Dussart, Remi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), and Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [SPI.FLUID]Engineering Sciences [physics]/Reactive fluid environment, [SPI.PLASMA]Engineering Sciences [physics]/Plasmas, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMethodologies_GENERAL, [PHYS.PHYS.PHYS-CHEM-PH]Physics [physics]/Physics [physics]/Chemical Physics [physics.chem-ph], ComputingMilieux_MISCELLANEOUS
Abstract

Poster; International audience

Published
2018

40. Microstructuration of titanium for implantable components

Author

Laudrel, Edouard, Tillocher, Thomas, Lefaucheux, Philippe, Woytasik, Marion, Michel, Fabrice, Philippe, Hadrien, Rousset, Baptiste, Boutaud, Bertrand, Robert, Michel, LEFEUVRE, Elie, Dussart, Remi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Université d'Orléans (UO), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), VEGATEC, MISTIC SAS, Université Paris-Saclay, and Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Saclay

Subjects
[SPI]Engineering Sciences [physics], [PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

42. Cryogenic ALE of silicon oxide

Author

Holtzer, Nicolas, Tillocher, Thomas, Lefaucheux, Philippe, Dussart, Remi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), and Centre National de la Recherche Scientifique (CNRS)-Université d'Orléans (UO)

Subjects
[SPI]Engineering Sciences [physics], [PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

43. Cryogenic Atomic Layer Etching of SiO2

Author

Holtzer, Nicolas, Tillocher, Thomas, Lefaucheux, Philippe, Dussart, Rémi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), and Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

44. Ignition and operation of microdischarge arrays on silicon wafers

Author

Dussart, Rémi, Michaud, Ronan, Felix, Valentin, Aubry, Olivier, Stolz, Arnaud, Lefaucheux, Philippe, Dzikowski, Sebastian, Schulz-Von Der Gathen, V., Overzet, Lawrence, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Institute for Applied Plasma Physics, Ruhr-Universität Bochum [Bochum], Plasma Application Laboratory (PAL), and University of Texas at Dallas [Richardson] (UT Dallas)

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

45. Microhollow cathode discharges on silicon devices

Author

Dussart, Rémi, Michaud, Ronan, Felix, Valentin, Aubry, Olivier, Stolz, Arnaud, Lefaucheux, Philippe, Dzikowski, Sebastian, Schulz-Von Der Gathen, V., Overzet, Lawrence, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Institute for Applied Plasma Physics, Ruhr-Universität Bochum [Bochum], Plasma Application Laboratory (PAL), and University of Texas at Dallas [Richardson] (UT Dallas)

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

46. Fabrication and characterization of microdischarge arrays on Silicon

Author

Dussart, Rémi, Michaud, Ronan, Stolz, Arnaud, Aubry, Olivier, Lefaucheux, Philippe, Dzikowski, Sebastian, Schulz-Von Der Gathen, V., Overzet, Lawrence, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Institute for Applied Plasma Physics, Ruhr-Universität Bochum [Bochum], Plasma Application Laboratory (PAL), and University of Texas at Dallas [Richardson] (UT Dallas)

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

47. CRYOGENIC ETCHING APPLIED TO THE REALIZATION OF HIGH DENSITY CAPACITOR WITH A HOMOPOLYMER MASK

Author

Kulsreshath, Mukesh, Sinturel, Christophe, Lefaucheux, Philippe, Vayer, Marylène, Tillocher, Thomas, Boufnichel, Mohamed, Dussart, Rémi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Interfaces, Confinement, Matériaux et Nanostructures ( ICMN), STMicroelectronics [Tours] (ST-TOURS), Tillocher, Thomas, and Dussart, Rémi

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics], [PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [PHYS.PHYS.PHYS-PLASM-PH] Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], ComputingMilieux_MISCELLANEOUS, [PHYS] Physics [physics]
Abstract

International audience

Published
2017

48. Stability enhancement of DC silicon-based microhollow cathode discharges

Author

Michaud, Ronan, Felix, Valentin, Dzikowski, Sebastian, Stolz, Arnaud, Aubry, Olivier, Lefaucheux, Philippe, Schulz-Von Der Gathen, V., Overzet, Lawrence, Dussart, Rémi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Institute for Applied Plasma Physics, Ruhr-Universität Bochum [Bochum], Plasma Application Laboratory (PAL), and University of Texas at Dallas [Richardson] (UT Dallas)

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

49. Titanium microstructuring for implantable components

Author

Laudrel, Edouard, Tillocher, Thomas, Méric, Yannick, Lefaucheux, Philippe, Woytasik, Marion, Michel, Fabrice, Rousset, Baptiste, Boutaud, Bertrand, Philippe, Hadrien, Robert, Michel, Lefeuvre, Elie, Dussart, Remi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), VEGATEC, MISTIC SAS, Tillocher, Thomas, and Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Saclay

Subjects
[PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], [PHYS.PHYS.PHYS-PLASM-PH] Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

50. Silicon micromachining at cryogenic temperature

Author

Tillocher, Thomas, Lefaucheux, Philippe, Boufnichel, Mohamed, Dussart, Remi, Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), and STMicroelectronics [Tours] (ST-TOURS)

Subjects
[PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

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