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1. Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories

3. Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories

4. Amorphous Gadolinium Aluminate as a Dielectric and Sulfur for Indium Phosphide Passivation

5. Beyond Silicon<scp>MOS</scp>: An Electrical Study on Interface and Gate Dielectrics with<scp>ac</scp>Admittance Techniques

6. A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From <tex-math notation='LaTeX'>${I}$ </tex-math> – <tex-math notation='LaTeX'>${V}$ </tex-math> , <tex-math notation='LaTeX'>${C}$ </tex-math> – <tex-math notation='LaTeX'>${V}$ </tex-math> , and <tex-math notation='LaTeX'>${G}$ </tex-math> – <tex-math notation='LaTeX'>${V}$ </tex-math> Measurements

7. Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking

8. Integration of Ruthenium-based Wordline in a 3-D NAND Memory Devices

9. On The Development of a Reliable Gate Stack for Future Technology Nodes Based on III-V Materials

10. Effect of the switching layer on CBRAM reliability and benchmarking against OxRAM devices

11. A New Quality Metric for III–V/High-k MOS Gate Stacks Based on the Frequency Dispersion of Accumulation Capacitance and the CET

12. Co Active Electrode Enhances CBRAM Performance and Scaling Potential

13. Impact of SiON tunnel layer composition on 3D NAND cell performance

14. Effect of Remote Oxygen Scavenging on Electrical Properties of Ge-Based Metal–Oxide–Semiconductor Capacitors

15. Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs

16. Impact of La–OH bonds on the retention of Co/LaSiO CBRAM

17. Diffusion-Mediated Growth and Size-Dependent Nanoparticle Reactivity during Ruthenium Atomic Layer Deposition on Dielectric Substrates

18. First-Principles Perspective on Poling Mechanisms and Ferroelectric/Antiferroelectric Behavior of Hf1-xZrxO2 for FEFET Applications

19. First demonstration of monocrystalline silicon macaroni channel for 3-D NAND memory devices

20. First demonstration of ∼3500 cm2/V-s electron mobility and sufficient BTI reliability (max Vov up to 0.6V) In0.53Ga0.47As nFET using an IL/LaSiOx/HfO2 gate stack

21. In Depth Analysis of 3D NAND Enablers in Gate Stack Integration and Demonstration in 3D Devices

22. Reaction Chemistry during the Atomic Layer Deposition of Sc2O3 and Gd2O3 from Sc(MeCp)3, Gd(iPrCp)3, and H2O

23. Al2O3/InGaAs Metal-Oxide-Semiconductor Interface Properties: Impact of Gd2O3and Sc2O3Interfacial Layers by Atomic Layer Deposition

24. Atomic layer deposition of scandium-based oxides

25. Si cap passivation for Ge nMOS applications

26. Chemisorption of ALD precursors in and on porous low-k films

27. Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole

28. Record mobility (μeff ∼3100 cm2/V-s) and reliability performance (Vov∼0.5V for 10yr operation) of In0.53Ga0.47As MOS devices using improved surface preparation and a novel interfacial layer

29. Scalability of InGaAs gate-all-around FET integrated on 300mm Si platform: Demonstration of channel width down to 7nm and Lg down to 36nm

30. Passivation Challenges with Ge and III/V Devices

31. Biaxial and Uniaxial Compressive Stress Implemented in Ge(Sn) pMOSFET Channels by Advanced Reduced Pressure Chemical Vapor Deposition Developments

32. Atomic layer deposition of Al2O3 on S-passivated Ge

33. Interface and Border Traps in Ge-Based Gate Stacks

34. Electrical Characterization of the MOS (Metal-Oxide-Semiconductor) System: High Mobility Substrates

35. Electrical Quality of III-V/Oxide Interfaces: Good Enough for MOSFET Devices

36. On the Process and Material Sensitivities for High-k Based Dielectrics

37. Development of ALD HfZrOx with TDEAH, TDEAZ and H2O

38. (Invited) Rare Earth Materials for Semiconductor Applications

39. Understanding the potential and limitations of HfAlO as interpoly dielectric in floating-gate Flash memory

40. Replacing SiO2 - Material and Processing Aspects of New Dielectrics

41. HfO2 Atomic Layer Deposition Using HfCl4/H2O: The First Reaction Cycle

42. Electrical Properties of Low-$V_{T}$ Metal-Gated n-MOSFETs Using $\hbox{La}_{2}\hbox{O}_{3}/\hbox{SiO}_{x}$ as Interfacial Layer Between HfLaO High-$\kappa$ Dielectrics and Si Channel

43. Single-Wafer Wet Chemical Oxide Formation for Pre-ALD High-k Deposition on 300 mm Wafer

44. Atomic Layer Deposition of Hafnium Based Gate Dielectric Layers for CMOS Applications

45. Atomic Layer Deposition of HfO2 on (100) and (110) Oriented Silicon Surfaces

46. Impact of Hf-Precursor Choice on Scaling and Performance of High-k Gate Dielectrics

47. ALD La-Based Oxides for Vt-Tuning in High-K/Metal Gate Stacks

48. Gate-all-around InGaAs nanowire FETS with peak transconductance of 2200μS/μm at 50nm Lg using a replacement Fin RMG flow

49. High-k gadolinium and aluminum scandates for hybrid floating gate NAND flash

50. Band alignment of Hf–Zr oxides on Al2O3/GeO2/Ge stacks

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