Electrical Characterization of the MOS (Metal-Oxide-Semiconductor) System: High Mobility Substrates

Recent developments on CMOS-driven III-V and Ge MOS (Metal-oxide-semiconductor) technologies provide new opportunities in advancing the performance envelope of MOS device as well as the relevant electrical characterization techniques. Understanding the capacitance-voltage (CV) and conductance voltage (GV) responses of the III-V/Ge MOS devices can lead to better assessments of the oxide-semiconductor material systems and more accurate performance predictions.