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Reaction Chemistry during the Atomic Layer Deposition of Sc2O3 and Gd2O3 from Sc(MeCp)3, Gd(iPrCp)3, and H2O
Reaction Chemistry during the Atomic Layer Deposition of Sc2O3 and Gd2O3 from Sc(MeCp)3, Gd(iPrCp)3, and H2O
- Source :
- Chemistry of Materials. 26:1404-1412
- Publication Year :
- 2014
- Publisher :
- American Chemical Society (ACS), 2014.
-
Abstract
- The reaction chemistry during the atomic layer deposition (ALD) of Sc2O3 and Gd2O3 from Sc(MeCp)3, Gd(iPrCp)3, and H2O was investigated by in situ time-resolved quadrupole mass spectrometry. Despite the similarity of the ligands of the Sc and Gd precursors, the growth characteristics and ligand dissociation patterns of the Sc2O3 and Gd2O3 ALD processes showed considerably different behavior. For both processes, the precursors reacted with the hydroxylated surface by proton transfer and release of the protonated ligand. The remaining ligands were then removed by hydrolysis during the H2O pulse. However, for the Sc(MeCp)3/H2O process, ∼56% of MeCpH was released during the Sc(MeCp)3 exposure, whereas in the case of the Gd(iPrCp)3/H2O process, as much as 90% of iPrCpH was released during the Gd(iPrCp)3 pulse. The observation that almost all iPrCp ligands were removed during the initial Gd(iPrCp)3 absorption step can be ascribed to CVD-like reactions between the Gd(iPrCp)3 precursor and excess hydroxide or phy...
Details
- ISSN :
- 15205002 and 08974756
- Volume :
- 26
- Database :
- OpenAIRE
- Journal :
- Chemistry of Materials
- Accession number :
- edsair.doi...........e922956788d41b36a1111c946f810cfb
- Full Text :
- https://doi.org/10.1021/cm403390j