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Your search keyword '"Lacaita, A.L."' showing total 281 results
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281 results on '"Lacaita, A.L."'

8. Transient simulation of delay and switching effects in phase-change memories

Author

Lavizzari, S., Ielmini, D., and Lacaita, A.L.

Subjects
Memory (Computers) -- Innovations, Simulation methods -- Usage, Delay lines -- Usage, Mathematical optimization -- Usage, Numerical analysis -- Usage, Semiconductor memory, Business, Electronics, Electronics and electrical industries
Published
2010

9. Statistics of resistance drift due to structural relaxation in phase-change memory arrays

Author

Boniardi, M., Ielmini, D., Lavizzari, S., Lacaita, A.L., Redaelli, A., and Pirovano, A.

Subjects
Memory (Computers) -- Innovations, Electric resistance -- Analysis, Voltage -- Measurement, Monte Carlo method -- Usage, Simulation methods -- Usage, Semiconductor memory, Business, Electronics, Electronics and electrical industries
Published
2010

11. Comprehensive investigation of statistical effects in nitride memories-part II: scaling analysis and impact on device performance

Author

Monzio Compagnoni, C., Mauri, A., Amoroso, S.M., Maconi, A., Greco, E., Spinelli, A.S., and Lacaita, A.L.

Subjects
Scalability -- Analysis, Voltage -- Measurement, Mathematical statistics -- Usage, Memory (Computers) -- Innovations, Simulation methods -- Usage, Semiconductor memory, Business, Electronics, Electronics and electrical industries
Published
2010

14. Fundamental limitations to the width of the programmed v_{T} distribution of nor flash memories

Author

Compagnoni, C.M., Chiavarone, L., Calabrese, M., Ghidotti, M., Lacaita, A.L., Spinelli, A.S., and Visconti, A.

Subjects
Flash memory -- Innovations, Statistical models -- Usage, Electron transport -- Methods, Voltage -- Measurement, Distribution (Probability theory) -- Usage, Scalability -- Analysis, Flash memory, Business, Electronics, Electronics and electrical industries
Published
2010

15. Time-to-digital converter for frequency synthesis based on a digital bang-bang DLL

Author

Zanuso, M., Madoglio, P., Levantino, S., Samori, C., and Lacaita, A.L.

Subjects
Analog to digital converters -- Design and construction, Complementary metal oxide semiconductors -- Usage, Delay lines -- Analysis, Phase-locked loops -- Analysis, Business, Computers and office automation industries, Electronics, Electronics and electrical industries
Published
2010

16. Comparison of modeling approaches for the capacitance-voltage and current-voltage characteristics of advanced gate stacks

Author

Palestri, P., Barin, N., Brunel, D., Busseret, C., Campera, A., Childs, P.A., Driussi, F., Fiegna, C., Fiori, G., Gusmeroli, R., Iannaccone, G., Karner, M., Kosina, H., Lacaita, A.L., Langer, E., Majkusiak, B., Compagnoni, C. Monzio, Poncet, A., Sangiorgi, E., Selmi, L., Spinelli, A.S., and Walczak, J.

Subjects
Silica -- Electric properties, Gates (Electronics) -- Design and construction, Business, Electronics, Electronics and electrical industries
Abstract

The comparison of capacitance-voltage and current-voltage characteristics of template MOS-Cap structures featuring pure Si[O.sub.2] or high-[kappa] gate dielectrics is presented. The discrepancies in capacitance and leakage current are investigated by studying the individual modeling parameters and the internal quantities contributing to current and capacitance.

Published
2007

22. Switch-off behaviour floating-body PD SOI MOSFET's

Author

Perron, L.M., Hamaguchi, C., Lacaita, A.L., Maegawa, S., and Yamaguchi, Y.

Subjects
Circuit design -- Research, Metal oxide semiconductor field effect transistors -- Research, Business, Electronics, Electronics and electrical industries
Abstract

The switch-off transients of drain current in floating-body partially depleted (PD) SOI MOSFETs have been studied. Floating body effects were found to improve the current capability when operated in the kink area and at frequency in the MHz range. However the same effects result in orders of magnitude increase of the off-state leakage current.

Published
1998

23. Impact ionization in silicon: a microscopic view

Author

Pacelli, A., Spinelli, A.S., and Lacaita, A.L.

Subjects
Ionization -- Methods, Silicon crystals -- Research, Monte Carlo method -- Usage, Physics
Abstract

A view of the impact ionization in silicon, using full-band Monte Carlo simulation as a microscopic observation equipment, is presented. The objective of the study is to gain insight into the ionization process by means of calculating the range of validity of the lucky-electron model. It is concluded that lucky flight is the preferred method for impact ionization at very low fields while at fields of technological interest for impact ionization, the phonon energy loss is considerable.

Published
1998

25. Phase-noise performance of crystal-like LC tanks

Author

Lacaita, A.L. and Samori, C.

Subjects
Oscillators (Electronics) -- Research, Noise -- Research, Integrated circuits -- Design and construction, Business, Computers and office automation industries, Electronics, Electronics and electrical industries
Abstract

Crystal-like inductance-capacitance (LC) tanks may have better noise performance than simple second-order LC structures. This characteristic has already been pointed out, but the reasons for such improvement have not been well clarified. In this brief, we relate the noise improvement to both the higher quality (Q) factor and the lower voltage noise power of the tank within the resonance of interest. Index Terms - Jitter, oscillator noise, oscillators, phase noise.

Published
1998

28. Threshold switching and phase transition numerical models for phase change memory simulations

Author

Redaelli, A., Pirovano, A., Benvenuti, A., and Lacaita, A.L.

Subjects
Tellurium -- Properties, Tellurium -- Spectra, Phase transformations (Statistical physics) -- Analysis, Germanium -- Properties, Germanium -- Spectra, Antimony -- Properties, Antimony -- Spectra, Physics
Abstract

A comprehensive numerical model is described for chalcogenide glasses by coupling a physically based electrical model that is able to reproduce the threshold switching with a local nucleation and growth algorithm to account for the phase transition dynamics. This model has reproduced the key elements of the [Ge.sub.2][Sb.sub.2][Te.sub.5] chalcogenide physics in the framework of phase change memory device simulations.

Published
2008

30. Investigation of the RTN Distribution of nanoscale MOS devices from subthreshold to on-state

Author

Amoroso, S.M., Compagnoni, C.M., Ghetti, A., Gerrer, L., Spinelli, A.S., Lacaita, A.L., and Asenov, A.

Abstract

This letter presents a numerical investigation of the statistical distribution of the random telegraph noise (RTN) amplitude in nanoscale MOS devices, focusing on the change of its main features when moving from the subthreshold to the on-state conduction regime. Results show that while the distribution can be well approximated by an exponential behavior in subthreshold, large deviations from this behavior appear when moving toward the on-state regime, despite a low probability exponential tail at high RTN amplitudes being preserved. The average value of the distribution is shown to keep an inverse proportionality to channel area, while the slope of the high-amplitude exponential tail changes its dependence on device width, length, and doping when moving from subthreshold to on-state.

Published
2013

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