Comprehensive investigation of statistical effects in nitride memories-part I: physics-based modeling

Authors :: Mauri, A.
Compagnoni, C.M.
Amoroso, S.M.
Maconi, A.
Ghetti, A.
Spinelli, A.S.
Lacaita, A.L.
Source :: IEEE Transactions on Electron Devices. Sept, 2010, Vol. 57 Issue 9, p2116, 7 p.
Publication Year :: 2010

Subjects :: Memory (Computers) -- Innovations
Simulation methods -- Usage
Computer-aided design -- Usage
Voltage -- Measurement
Mathematical statistics -- Usage
Semiconductor memory
Business
Electronics
Electronics and electrical industries

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