Statistics of resistance drift due to structural relaxation in phase-change memory arrays

Authors :: Boniardi, M.
Ielmini, D.
Lavizzari, S.
Lacaita, A.L.
Redaelli, A.
Pirovano, A.
Source :: IEEE Transactions on Electron Devices. Oct, 2010, Vol. 57 Issue 10, p2690, 6 p.
Publication Year :: 2010

Subjects :: Memory (Computers) -- Innovations
Electric resistance -- Analysis
Voltage -- Measurement
Monte Carlo method -- Usage
Simulation methods -- Usage
Semiconductor memory
Business
Electronics
Electronics and electrical industries

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