190 results on '"JAOUEN, H."'
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2. A Pearson Effective Potential for Monte-Carlo simulation of quantum confinement effects in various MOSFET architectures
3. Strained Si, Ge and SiGe alloys modeling with full-zone k.p method optimized from first principle calculation
4. Modeling Study of Ultra-Thin Ge Layers Using Tight-Binding, LCBB and kp Methods
5. Pearson Effective Potential vs. Multi-Subband Monte-Carlo Simulation for Electron Transport in DG nMOSFETs
6. A New Backscattering Model for Nano-MOSFET Compact Modeling
7. Modeling dopant diffusion in SiGe and SiGeC layers
8. A Unified Model of Dopant Diffusion in SiGe.
9. Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects
10. The STORM Technology CAD System
11. Full-Band Monte Carlo investigation of hole mobilities in SiGe, SiC and SiGeC alloys
12. On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs
13. Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility
14. Pearson versus gaussian effective potentials for quantum-corrected Monte-Carlo simulation
15. Validity of the effective potential approach for the simulation of quantum confinement effects: A Monte-Carlo study
16. Effect of voids-controlled vacancy supersaturations on B diffusion
17. FEM-based method to determine mechanical stress evolution during process flow in microelectronics, application to stress–voiding
18. A constitutive single crystal model for the silicon mechanical behavior: Applications to the stress induced by silicided lines and STI in MOS technologies
19. Diffusion and Activation of Ultra Shallow Boron Implants in Silicon in Proximity of Voids
20. Kinetic analysis and correlation with residual stress of the Ni/Si system in thin film
21. Electrical and Physical Investigation of Defect Annihilation in Arsenic Implanted Silicon
22. Electronic transport investigations on silicon damaged by arsenic ion implantation.
23. Experimental and theoretical investigation of the ‘apparent’ mobility degradation in Bulk and UTBB-FDSOI devices: A focus on the near-spacer-region resistance
24. TCAD modeling challenges for 14nm FullyDepleted SOI technology performance assessment
25. New compact model for performance and process variability assessment in 14nm FDSOI CMOS technology
26. Embedded non-volatile memory study with surface potential based model
27. Dynamic Charge Sharing modeling for surface potential based models
28. Dopant Activation and Defect Annihilation of Heavily Doped Arsenic Implanted Silicon Layers
29. Atomistic simulation of solid phase epitaxy of amorphous silicon : influence of the interatomic potential on the recristallisation velocity
30. Pearson Effective Potential vs. Multi-Subband Monte-Carlo Simulation for Electron Transport in DG nMOSFETs
31. Modeling Study of Ultra-Thin Ge Layers Using Tight-Binding, LCBB and kp Methods
32. Experimental and theoretical investigation of the ‘apparent’ mobility degradation in Bulk and UTBB-FDSOI devices: A focus on the near-spacer-region resistance
33. The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies
34. A new approach for modeling drain current process variability applied to FDSOI technology
35. Effective field and universal mobility in high-k metal gate UTBB-FDSOI devices
36. Stress engineering in Si based micro structures using technology computer-aided design
37. Stress engineering in Si-based microstructures using technology computer-aided design
38. Finite element analysis of stress evolution in Si based front and back ends micro structuresInternational Conferencre on Simulation of Semiconductor Processes and Devices
39. Mobility in high-K metal gate UTBB-FDSOI devices: From NEGF to TCAD perspectives
40. Limits and improvements of TCAD piezoresistive models in FDSOI transistors
41. TCAD modeling challenges for 14nm FullyDepleted SOI technology performance assessment.
42. Characterization and Modeling of Back Bias Impacts on Remote-Coulomb-Limited Mobility in UTBB-FDSOI Devices
43. Modeling study of the SiGe/Si heterostructure in FDSOI pMOSFETs
44. Linear Combination of Bulk Bands-Method and Atomistic Tight-Binding Description of Strained Silicon and Germanium Layers
45. Electron-phonon scattering in Si and Ge: From bulk to nanodevices
46. Multi-fingered LDMOS thermal analysis based on a distributed thermal network
47. Mechanical issues induced by Electrical Wafer Sort: Correlations from actual tests, nanoindentation and 3D dynamic modeling
48. Characterization & modeling of gate-induced-drain-leakage with complete overlap and fringing model
49. On the accuracy of current TCAD hot carrier injection models for the simulation of degradation phenomena in nanoscale devices
50. Monte Carlo simulation of high-energy transport of electrons and holes in bulk SiGeC alloys
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