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Experimental and theoretical investigation of the ‘apparent’ mobility degradation in Bulk and UTBB-FDSOI devices: A focus on the near-spacer-region resistance
- Source :
- 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2014, Yokohama, France. pp.101-104
- Publication Year :
- 2014
- Publisher :
- HAL CCSD, 2014.
-
Abstract
- International audience
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2014, Yokohama, France. pp.101-104
- Accession number :
- edsair.dedup.wf.001..5c85426b1d32fc34897b9ddcbecec49a