Atomistic simulation of solid phase epitaxy of amorphous silicon : influence of the interatomic potential on the recristallisation velocity

Authors :: Christophe Krzeminski
Cuny, V.
Lecat, E.
Lampin, E.
Pakfar, A.
Tavernier, C.
Jaouen, H.
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Source :: Materials Research Society Spring Meeting, MRS Spring 2006, Sub-Second Rapid Thermal Processing for Device Fabrication, Materials Research Society Spring Meeting, MRS Spring 2006, Sub-Second Rapid Thermal Processing for Device Fabrication, 2006, Moscone West, San-Franscico, CA, United States, HAL
Publication Year :: 2006
Publisher :: HAL CCSD, 2006.

Language :: English
Database :: OpenAIRE
Journal :: Materials Research Society Spring Meeting, MRS Spring 2006, Sub-Second Rapid Thermal Processing for Device Fabrication, Materials Research Society Spring Meeting, MRS Spring 2006, Sub-Second Rapid Thermal Processing for Device Fabrication, 2006, Moscone West, San-Franscico, CA, United States, HAL
Accession number :: edsair.dedup.wf.001..a3d9bc548376b1237c7174a6b372300a

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