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Microelectrodes are used in a wide range of applications from analytical electrochemistry and biomolecular sensing to in vivo implants. While a variety of insulating materials have been used to define the microelectrode active area, most are not suitable for nanoscale electrodes (

Recent advances in the field of two-dimensional (2D) transition metal dichalcogenide (TMD) materials have indicated that atomic layer deposition (ALD) of the metal oxide and subsequent sulfidation could offer a method for the synthesis of large area two-dimensional materials such as MoS2 with excellent layer control over the entire substrate. However, growing large area oxide films by ALD with sub 1 nm nucleation coalescence remains a significant challenge, and the necessary steps are unexplored. In this work, we demonstrate the necessary process improvements required to achieve sub 1 nm nucleation control by characterization of nucleation domains formed by oxide deposition. Synthesis of the TMD MoS2 from sulfidation of oxide deposited by both thermal ALD from (tBuN)2(NMe2)2Mo and O3 and plasma enhanced ALD (PEALD) from (tBuN)2(NMe2)2Mo and remote O2 plasma was performed. Large uniform MoS2 areas were achieved by optimizing the effects of various growth process conditions and surface treatments on the ALD...

Microelectrodes are used in a wide range of applications from analytical electrochemistry and biomolecular sensing to in vivo implants. While a variety of insulating materials have been used to define the microelectrode active area, most are not suitable for nanoscale electrodes (1 μm

This paper reports on a quality factor ( $Q$ )-boosting technique for aluminum nitride (AlN) Lamb wave resonators by lithographically defining their acoustic boundaries. The technique has been demonstrated to enhance resonator $Q$ from 980 to 3000 without compromising the electromechanical coupling $({k_{\mathrm{t}}}^{2}=1.75\%)$ , consequently resulting in a high figure of merit of 52.25 ( $\text{FoM}={k_{\mathrm{t}}}^{2}\cdot Q$ ). Our approach derives from our quantitative analysis of the reflection coefficient at the acoustic boundaries of a conventional Lamb wave AlN resonator, which suggests inadequate energy confinement from a reflection coefficient of only 0.47. A two-prong approach, which involves first defining the release regions lithographically and then adding a Pt layer regionally over the anchors, is adopted to create a more significant impedance mismatch at the acoustic boundaries and reduce energy leakage to the surrounding.

Plasma-enhanced atomic layer deposition (PEALD) of ultrathin (∼7 nm) slightly Ti-rich Ba x Ti y O z (BTO) films with different Al-doping concentration ([Al]/([Al] + [Ba] + [Ti]) = 0 to 22 at%) was studied. In particular, the effects of Al-doping in BTO on compositional, crystallographic and electrical properties were investigated. Previously, BTO films with a Ti cation composition, [Ti]/([Ba] + [Ti]) = ∼60 at% was reported to be advantageous for crystallization, resulting in superior dielectric properties. These Ti-rich BTO films, however, suffered from high leakage currents, necessitating the change in its crystalline structure as well as elemental composition. By incorporating Al 2 O 3 into the BTO films, the leakage current can be controlled, where the BTO films with an Al-doping concentration of 12 at% showed a leakage current reduced by one order of magnitude compared to un-doped BTO (i.e., ∼10 −7 to ∼10 −6 A/cm 2 at +1.6 V) without a significant drop of the dielectric constant (43,un-doped to 40, Al-doped).

Specimen preparation remains a practical challenge in transmission electron microscopy and frequently limits the quality of structural and chemical characterization data obtained. Prevailing methods for thinning of specimens to electron transparency are serial in nature, time consuming, and prone to producing artifacts and specimen failure. This work presents an alternative method for the preparation of plan-view specimens using isotropic vapor-phase etching with integrated etch stops. An ultrathin amorphous etch-stop layer simultaneously serves as an electron transparent support membrane whose thickness is defined by a controlled growth process such as atomic layer deposition with sub-nanometer precision. This approach eliminates the need for mechanical polishing or ion milling to achieve electron transparency, and reduces the occurrence of preparation induced artifacts. Furthermore, multiple specimens from a plurality of samples can be thinned in parallel due to high selectivity of the vapor-phase etching process. These features enable dramatic reductions in preparation time and cost without sacrificing specimen quality and provide advantages over wet etching techniques. Finally, we demonstrate a platform for high-throughput transmission electron microscopy of plan-view specimens by combining the parallel preparation capabilities of vapor-phase etching with wafer-scale micro- and nanofabrication.

Nanoelectromechanical (NEM) relays show promise in a wide variety of low power applications. NEM relays have near-zero leakage current, in contrast to the relatively high leakage current of nanoscale CMOS transistors, thus enabling hybrid CMOS-NEM relay systems that are more energy efficient. If NEM relays can be fabricated in the back-end-of-line (BEOL) metallization process, they can be added to a CMOS integrated circuit without adding significantly to the die area. In this paper, we demonstrate a CMOS BEOL-compatible fabrication process of NEM relays with protected, buried interconnects. The NEM relay processing steps are at temperatures below 425 °C and all mechanical and chemical processing steps are designed to avoid damage to underlying CMOS transistors. We demonstrate a lateral relay with buried interconnect that switches for more than 1000 cycles with resistances below 300 kΩ in nitrogen at atmospheric pressure.

We demonstrate stable, atomically smooth monolayer oxidation of Si(111) using a remote plasma. Scanning tunneling microscopy (STM) confirms the atomically flat nature of the oxidized surface, while cross-sectional transmission electron microscopy (TEM) proves the monolayer to bilayer oxide thickness. Fourier transform infrared spectroscopy (FTIR) and atomic layer deposition (ALD) indicate oxygen is incorporated onto the silicon surface in the form of Si–O–Si and Si–OH bonds. The incorporation of Si–OH bonds is inferred by using TiCl4, a highly specific ALD precursor, for TiO2 ALD. This plasma technique provides precise control of the surface chemistry and yields abrupt yet stable SiO/Si interfaces. It enables production of atomically flat, ALD-active silicon surfaces that could serve as a well-defined platform for investigation of various surface chemistries via STM. Using this substrate, we present the first ever STM observations of ALD TiO2 on silicon oxide.

This paper presents new results from the first thermal accelerometer fabricated using Plasma Enhanced Atomic Layer Deposition. PEALD allows for ultrathin high-density platinum films that deliver excellent stability and accuracy [1]. We offer a 100x cross-section reduction relative to previous thermal accelerometers, thereby increasing the heating efficiency and decreasing thermal time constants [2,3,4,5]. The resistance thermometers and heaters capitalize on the properties provided by PEALD and Pt: extreme stability, high resistivity, and linear temperature coefficient of resistance (TcR) [6]. For a heater temperature rise of 150°C, this device has a raw sensitivity of 54 moC/g, excellent cross-axis isolation, and remarkably low drift.

Plasma-enhanced atomic layer deposition (PEALD) provides multiple benefits compared to thermal ALD including lower possible process temperature and a wider palette of possible materials. However, coverage of high aspect ratio (AR) structures is limited due to the recombination rates of the radical plasma species. We study the limits of conformality in 1:30 AR structures for TiO2 based on tetrakis(dimethylamido)titanium (TDMA-Ti) and O2 plasma through variation in plasma exposure and substrate temperature. Extending plasma exposure duration and decreasing substrate temperature within the ALD window both serve to improve the conformality of the deposited film, with coverage >95% achievable. Additionally, the changes in morphology of the TiO2 were examined with crystallites of anatase and brookite found.

Aluminum doped HfO2 (HfAlO) prepared by atomic layer deposition is investigated as gate dielectric for low-voltage organic thin-film transistors (OTFTs). The HfAlO film exhibits a low leakage current density of \(4.92 \times 10^{-8}\) A/cm \(^{2}\) at −3 MV/cm, which is \(\sim 70\) % smaller than its HfO2 counterpart. In addition, copper phthalocyanine (CuPc) OTFT with HfAlO dielectric has an average mobility \(\mu ~(2.58\pm 0.32\times 10^{-3}\) cm \(^{2}\) /Vs) increased by 58%, sub-threshold slope SS (0.9 ± 0.11 V/decade) decreased by 11%, and ON/OFF ratio \(I_{\mathrm{{\scriptstyle ON}}}/I_{\mathrm{{\scriptstyle OFF}}}\) (3.1 ± 1.3 \(\times \) \( 10^{3}\) ) increased by 86% as compared with those with HfO2 as gate dielectric ( \(\mu =1.63\pm 0.27\times 10^{-3}\) cm \(^{2}\) /Vs; \({\rm SS}=1.01\) ±0.1 V/decade; \(I_{\mathrm{{\scriptstyle ON}}}/I_{\mathrm{{\scriptstyle OFF}}}=1.7\pm 0.77\times 10^{3}\) ). All these could be ascribed to the inclusion of Al in the HfO2 film, which increases the conduction band offset and the bandgap and improves the dielectric and interface quality. The temperature effect on the performance of OTFTs is also investigated.

This letter describes the manufacture and performance of a monolithic double-layer silicon photonic crystal temperature sensor. The sensor is fabricated on standard silicon wafers using oxide passivation and a combination of isotropic and anisotropic etching, and mounted on the facet of a standard single-mode optical fiber using template-assisted epoxy bonding. The double-layer configuration leads to coupling of the guided resonances in the two photonic crystals and enables sharper resonances and consequently higher temperature sensitivity and better detection limit (0.011 °C) than the single-layer counterpart. We experimentally demonstrate that the sensor has a twofold increased temperature sensitivity in terms of reflectivity change at a fixed wavelength (-0.00576/°C), and report on electromagnetic simulations explaining the enhanced sensor operation. The photonic crystal fabrication method and template-assisted bonding enable batch-fabrication of the sensors. Their small size, robust construction, and fiber interface make the sensors promising for numerous applications, including sensing in harsh environments.

Platforms that are sensitive and specific enough to assay low-abundance protein biomarkers, in a high throughput multiplex format, within a complex biological fluid specimen, are necessary to enable protein biomarker based diagnostics for diseases such as cancer. The signal from an assay for a low-abundance protein biomarker in a biological fluid sample like blood is typically buried in a background that arises from the presence of blood cells and from high-abundance proteins that make up 90% of the assayed protein mass. We present an automated on-chip platform for the depletion of cells and highly abundant serum proteins in blood. Our platform consists of two components, the first of which is a microfluidic mixer that mixes beads containing antibodies against the highly abundant proteins in the whole blood. This complex mixture (consisting of beads, cells, and serum proteins) is then injected into the second component of our microfluidic platform, which comprises a filter trench to capture all the cells and the beads. The size-based trapping of the cells and beads into the filter trench is significantly enhanced by leveraging additional negative dielectrophoretic forces to push the micron sized particles (cells and beads which have captured the highly abundant proteins) down into the trench, allowing the serum proteins of lower abundance to flow through. In general, dielectrophoresis using bare electrodes is incapable of producing forces beyond the low piconewton range that tend to be insufficient for separation applications. However, by using electrodes passivated with atomic layer deposition, we demonstrate the application of enhanced negative DEP electrodes together with size-based flltration induced by the filter trench, to deplete 100% of the micron sized particles in the mixture.

This study uses surface resistance of silicon dioxide and a charge-biased, microshell encapsulated, single-anchored double-ended tuning fork resonator (DETF) to measure relative humidity (RH). As relative humidity increases, the surface resistance of silicon dioxide decreases due to increasing amounts of water adsorbed on the surface. This decrease in surface resistance leads to a faster charge decay from a capacitor. The DETF resonator converts the amount of charge on the capacitor to a frequency shift, via the electrostatic spring softening term. This frequency shift can be characterized by either exponential fitting or slope fitting. The hysteresis was shown to be less than 0.15% RH. The relative humidity is determined from the slope or the decay time constant, with the precision of 1.3 × 10−3% RH for slope fitting and 1.3 × 10−4% RH for exponential fitting.

Laterally actuated polycrystalline silicon nanoelectromechanical (NEM) relays with enhanced electrical properties are presented. Due to surface oxidation of polysilicon in room ambient conditions, the relays have a high contact resistance (> 1 GΩ) that requires high drain bias (3-5 V) to break through. The addition of a platinum sidewall coating reduces the on-resistance and the required drain bias to as low as 3 kΩ and 0.1 V, respectively. The platinum coating's stability is demonstrated by two tests: first, a contact-and-hold test where the relay passes current (~1μA) for up to 155 min and, second, a hot cycling test where the relay survives for over 108cycles . The NEMS relays are simulated using finite-element analysis, and the models are verified against experimental tests. Furthermore, the relays are configured and tested as a 2 : 1 multiplexer to show their potential as a digital logic component.

This paper presents techniques for designing nanoelectromechanical relay-based logic circuits using six-terminal relays that behave as universal logic gates. With proper biasing, a compact 2-to-1 multiplexer can be implemented using a single six-terminal relay. Arbitrary combinational logic functions can then be implemented using well-known binary decision diagram (BDD) techniques. Compared to a CMOS-style implementation using four-terminal relays, the BDD-based implementation can result in lower area without major impact on performance metrics such as delay, and energy (when the relays are scaled to small dimensions). Although it is possible to implement any combinational circuit with a single mechanical delay, the relay count can be significantly reduced for complex logic functions by allowing multiple mechanical delays.

The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposited (ALD) of hydrofluoric acid (HF) etch resistant and electrically insulating films for sidewall spacer processing. Silicon nitride (SiN) has been the prototypical material for this need and extensive work has been conducted into realizing sufficiently lower wet etch rates (WERs) as well as leakage currents to meet industry needs. In this work, we report on the development of plasma-enhanced atomic layer deposition (PEALD) composites of SiN and AlN to minimize WER and leakage current density. In particular, the role of aluminum and the optimum amount of Al contained in the composite structures have been explored. Films with near zero WER in dilute HF and leakage currents density similar to pure PEALD SiN films could be simultaneously realized through composites which incorporate ≥13 at. % Al, with a maximum thermal budget of 350 °C.

Tetrakisdimethylamido (TDMA) based precursors are commonly used to deposit metal oxides such as TiO2, ZrO2, and HfO2 by means of chemical vapor deposition and atomic layer deposition (ALD). Both thermal and plasma enhanced ALD (PEALD) have been demonstrated with TDMA-metal precursors. While the reactions of TDMA-type precursors with water and oxygen plasma have been studied in the past, their reactivity with pure O2 has been overlooked. This paper reports on experimental evaluation of the reaction of molecular oxygen (O2) and several metal organic precursors based on TDMA ligands. The effect of O2 exposure duration and substrate temperature on deposition and film morphology is evaluated and compared to thermal reactions with H2O and PEALD with O2 plasma. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in (Journal of Vacuum Science and Technology A) and may be found at (http://avs.scitation.org/doi/10.1116/1.4937991). Licensed under a Creative Commons Attribution 3.0 Unported License. (CC BY 3.0 NO)

We demonstrate a temperature sensor consisting of a 2-D, Silicon (Si), Photonic Crystal (PC) attached to the facet of a standard single-mode optical fiber. The 2-D PC sensors are fabricated on standard Si wafers, using a single mask and a combination of isotropic and anisotropic etching, and microassembled onto the facets of the optical fibers by Si-welding. The temperature of the Si-PC sensor is monitored by measuring its reflectance spectrum in the 1250 to 1650 nm wavelength range. The measured reflectivity peak shift is 0.11 nm°C in the 100°C to 700°C temperature range. The observed spectral shift and temperature sensitivity are significantly higher than high-temperature fiber Bragg grating sensors, and comparable to long-period fiber gratings sensors. The high sensitivity, combined with compactness and robust structure, give these sensors strong potential for use in harsh environments.

We have demonstrated an informatics methodology for finding correlations between the full profile Fourier transform infrared spectra of polycrystalline 3C-silicon carbide (poly-SiC) films and their growth conditions, thereby developing high-throughput structure-process relationships. Because SiC films are a structural element in photonic sensors, this paper focuses on the interpretation of their optical response, the multivariate tracking of critical processing pathways, and the identification of controlling processing mechanisms. Using principal component analysis, we have developed a data analysis tool to aid in the assessment of the relative contributions of experimental parameters in low-pressure chemical vapor deposition processes to optical responses on the basis of the size of eigenvalues of the spectral data set. The applied methodology for identifying spectral relationships of stoichiometry, dopant chemistry, and microstructure of poly-SiC provides more effective guidelines to manipulate optical responses by controlling multiple experimental parameters. Copyright © 2011 John Wiley & Sons, Ltd.

Fiber optic sensors have applications in the measurement of a wide range of physical properties such as temperature, pressure, and refractive index. These sensors are immune to electromagnetic interference, made of high temperature dielectric materials and hence can be deployed in harsh environments where conventional electronics would fail. Photonic crystal (PC) fiber tip sensors are highly sensitive to changes in the refractive index and temperature while remaining compact and robust. In comparison to conventional fiber sensors such as fiber Bragg gratings (FBG) or long period fiber gratings (LPFG), they are attractive in several aspects. PC fiber tip sensors have better sensitivity to refractive index and temperature than FBG sensors and are have much smaller sensing volumes than FBGs and LPFGs. Their small size allows them to combine high sensitivity and structural robustness. The most attractive feature may be that PC fiber tip sensors also return a spectrally rich signal with independently shifting resonances that can be used to extract multiple physical properties of the measurand and distinguish between them. In this paper, we show that the PC fiber tip sensor is highly sensitive to the refractive index and temperature of the environment and that both parameters can be simultaneously determined using multiple wavelengths.

In this letter, we examine the role of the Ti capping layer in HfO x -based resistive random access memory (RRAM) devices on the memory performance. It is found that with a thicker Ti capping layer, the fresh device initial leakage current increases and as a result, the forming voltage decreases. In addition, with a thin Ti layer of

This paper presents the characterization of sealed microelectromechanical devices and their packaging fabricated in a polycrystalline 3C silicon carbide (poly-SiC) thin-film encapsulation process. In this fabrication technique, devices are sealed with a nominally 2-?m low-pressure chemical vapor deposition poly-SiC, and the device layer is simultaneously coated with a nominally 0.2- ?m poly-SiC thin film. Device characterization includes measurement of the resonant frequency and the quality factor of double-ended tuning-fork micromechanical resonators, which have a Si-SiC composite beam structure. Experimental results show that the pressure inside the packaging can be controlled from 447 Pa to 15.5 kPa with a 400°C annealing process. The frequency drifts of the encapsulated resonators are less than the frequency noise level (±10.6 ppm) measured over 29 days at 84.6°C ±0.1°C, which suggests that the poly-SiC thin-film packaging technique can offer hermetic packaging for various applications in microelectromechanical systems including inertial sensors. In addition to the packaging performance, the temperature coefficient of Young's modulus for poly-SiC is derived from the resonant-frequency change of resonators with temperature. The reduction of the quality factor due to the poly-SiC coating, predicted in the theoretical model, is confirmed by measurements.

Packaging of microelectromechanical systems (MEMS) is a critical step in the transition from development to commercialized product. This paper presents a thin-film encapsulation process that allows varying trench widths suitable for MEMS devices with lateral deflections as large as 20 ?m. The process involves the deposition and planarization of a sacrificial-oxide layer of up to 23 ?m thick, the deposition of a 20 ?m epitaxial-silicon sealing cap, the release of structures using hydrofluoric acid (HF) vapor, and the sealing of the structure at low pressure. Devices produced using this encapsulation method are capable of surviving standard backend processes such as wafer singulation and wire bonding. Among the numerous types of devices encapsulated, two different types of silicon MEMS resonators were fabricated. These functioning resonators demonstrate the ability of the process to successfully encapsulate devices, taking advantage of both large and small trench widths. Such a generalized fabrication platform greatly expands the possibilities of the wafer-scale encapsulation to numerous MEMS devices and retains the robustness necessary for backend processing.

We report on the fabrication and characterization of large-area 2-D square arrays of subwavelength holes in Ag and Al films. Fabrication is based on thermal nanoimprint lithography and metal evaporation, without the need for etching, and is compatible with low-cost, large-scale production. Reflectance spectra for these arrays display an intensity minimum whose amplitude, center wavelength, and line width depend on the geometry of the array and the reflectivity of the metal film. By placing various fluids in contact with the subwavelength aperture arrays, we observe that the center wavelength of the reflectance minimum varies linearly with the refractive index of the fluid with a sensitivity of over 500 nm per refractive index unit. The surface plasmon theory is used to predict sensitivities to refractive index change with accuracies better than 0.5%.

We demonstrate a tunable infrared (IR) filter based on a patterned subwavelength grating in a metal film. The optical properties of the filter, including center wavelength and pass bandwidth, are dependent on the lithographically defined pattern of the grating. Additionally, the transmission intensity is controlled by using electrostatic actuation to bring the metal film into and out of contact with an underlying dielectric film. A maximum transmission of 72% is achieved, with a 4-to-1 rejection ratio at an actuation voltage of 46 V. The device holds promise for application to gas sensors and other IR sensor systems. The operating principle of this device can be extended to other regions of the electromagnetic spectrum beyond the mid-IR

We report on the demonstration of a microfabrication process which allows the release of suspended films or structures of varying sizes in which the release volume is predefined by i) lithographic patterning, ii) etch-stop deposition by atomic layer deposition (ALD), iii) refilling sacrificial layer into the empty volume, and iv) subsequent chemical mechanical planarization (CMP). We refer to this as an “etch sandbox,” which allows the user to process devices on a planarized substrate after completion of the sandbox. We demonstrate micrometer scale Al2O3 suspended membranes utilizing Al 2 O 3 as the etch-stop and polysilicon as the refill/sacrificial etch material. Within a single substrate and single release, defined etch volumes up to differing by up to a factor of 104 can be realized. Considering the flexibility of this process, suspended membranes with more complicated structure and composition could be developed in the future.

Plasma-enhanced atomic layer deposition (PEALD) provides multiple benefits compared to thermal ALD including lower possible process temperature and a wider palette of possible materials. However, coverage of high aspect ratio (AR) structures is limited due to the recombination rates of the radical plasma species. We study the limits of conformality in 1:30 AR structures for TiO2 based on tetrakis(dimethylamido)titanium (TDMA-Ti) and O2 plasma through variation in plasma exposure and substrate temperature. Extending plasma exposure duration and decreasing substrate temperature within the ALD window both serve to improve the conformality of the deposited film, with coverage95% achievable. Additionally, the changes in morphology of the TiO2 were examined with crystallites of anatase and brookite found.

In this paper, we quantitatively investigate with atom probe tomography, the effect of temperature on the interfacial transition layer suboxide species due to the thermal oxidation of silicon. The chemistry at the interface was measured with atomic scale resolution, and the changes in chemistry and intermixing at the interface were identified on a nanometer scale. We find an increase of suboxide (SiOx) concentration relative to SiO2 and increased oxygen ingress with elevated temperatures. Our experimental findings are in agreement with reactive force field molecular dynamics simulations. This work demonstrates the direct comparison between atom probe derived chemical profiles and atomistic-scale simulations for transitional interfacial layer of suboxides as a function of temperature.

Waveguides are ubiquitous in silicon photonics. The density of waveguides is crucial to the integration density. We propose and demonstrate a waveguide superlattice that enables high-density waveguide integration at a half-wavelength pitch with low crosstalk.

NbTiN has a variety of superconducting applications, ranging from RF cavities to single-photon detectors. Here, we systematically investigated the plasma-enhanced atomic layer deposition (PEALD) of Nb x Ti with the organometallic precursors (t-butylimido) tris(diethyamido) niobium(V) and tetrakis (dimethylamido) titanium in conjunction with a remote H2/N2 plasma. Deposited film properties have been studied as a function of the ratio of Nb to Ti precursor pulses within each ALD supercycle. PEALD NbTiN films were characterized with spectroscopic ellipsometry (thickness, optical properties), four point probe (resistivity), x-ray photoelectron spectroscopy (composition), x-ray reflectivity (density and thickness), x-ray diffraction (crystallinity), and superconductivity measurements. The PEALD process has shown distinct advantages over deposition of superconducting films via thermal ALD or sputtering, for example a lower processing temperature and more efficient control of film composition. This control of film composition enabled the tuning of electrical and superconducting properties, such as varying the superconducting critical temperature T C between 6.9 and 13.2 K.

The accurate measurement of mechanical properties of thin films is required for the design of reliable nano/micro-electromechanical devices but is increasingly challenging for thicknesses approaching a few nanometers. We apply a combination of resonant and static mechanical test structures to measure elastic constants and residual stresses of 8–27 nm thick Al2O3 and Pt layers which have been fabricated through atomic layer deposition. Young's modulus of poly-crystalline Pt films was found to be reduced by less than 15% compared to the bulk value, whereas for amorphous Al2O3 it was reduced to about half of its bulk value. We observed no discernible dependence of the elastic constant on thickness or deposition method for Pt, but the use of plasma-enhanced atomic layer deposition was found to increase Young's modulus of Al2O3 by 10% compared to a thermal atomic layer deposition. As deposited, the Al2O3 layers had an average tensile residual stress of 131 MPa. The stress was found to be higher for thinner layers and layers deposited without the help of a remote plasma. No residual stress values could be extracted for Pt due to insufficient adhesion of the film without an underlying layer to promote nucleation.

Thin films of niobium nitride are useful for their physical, chemical, and electrical properties. NbN superconducting properties have been utilized in a wide range of applications. Plasma-enhanced atomic layer deposition (PEALD) of NbN with (t-butylimido) tris(diethylamido) niobium(V) and remote H2/N2 plasmas has been investigated. Deposited film properties have been studied as a function of substrate temperature (100–300 °C), plasma power (150–300 W), and H2 flow rate (10–80 sccm). PEALD NbN films were characterized with spectroscopic ellipsometry (thickness, optical properties), four point probe (resistivity), x-ray photoelectron spectroscopy (composition), x-ray reflectivity (density and thickness), x-ray diffraction (crystallinity), and superconductivity measurements. Film composition varied with deposition conditions, but larger cubic NbN crystallites and increased film density at higher substrate temperatures and H2 flow rates lead to room temperature resistivity values as low as 173 μΩ cm and super...

In this letter, we describe the fabrication of double-layered self-aligned silicon photonic crystals (PCs) using directional and isotropic etches. The double-layer PCs represent a step towards practical 3-D PCs based on standard Si processing, and they have several advantageous characteristics compared to single-layer PCs, including higher reflectivity and sharper resonances, as demonstrated both experimentally and by finite-difference time-domain (FDTD) simulations.

Silicon photonics holds great promise for low-cost large-scale photonic integration. In its future development, integration density will play an ever-increasing role in a way similar to that witnessed in integrated circuits. Waveguides are perhaps the most ubiquitous component in silicon photonics. As such, the density of waveguide elements is expected to have a crucial influence on the integration density of a silicon photonic chip. A solution to high-density waveguide integration with minimal impact on other performance metrics such as crosstalk remains a vital issue in many applications. Here, we propose a waveguide superlattice and demonstrate advanced superlattice design concepts such as interlacing-recombination that enable high-density waveguide integration at a half-wavelength pitch with low crosstalk. Such waveguide superlattices can potentially lead to significant reduction in on-chip estate for waveguide elements and salient enhancement of performance for important applications, opening up possibilities for half-wavelength-pitch optical-phased arrays and ultra-dense space-division multiplexing.

We present the design, fabrication, and characterization of high quality factor and small mode volume planar photonic crystal cavities from cubic (3C) thin films (thickness ~ 200 nm) of silicon carbide (SiC) grown epitaxially on a silicon substrate. We demonstrate cavity resonances across the telecommunications band, with wavelengths from 1,250 - 1,600 nm. Finally, we discuss possible applications in nonlinear optics, optical interconnects, and quantum information science., Comment: 7 pages, 6 figures

A novel design for a six-terminal nanoelectromechanical relay is presented. The design includes a secondary beam in the signal pathway of the device, which allows direct contact between the source and drain. The advantages of the new design include avoidance of fabrication-based contact degradation during the isolation etch, lower sensitivity to high gap variations and reduction in the number of contacts needed to close the signal pathway. Also, the new design introduces a novel anti-stiction mechanism. An analytical model is presented which compares the mechanical behavior of the new design to the older design. The devices are fabricated using a silicon nitride hard mask with an ammonium hydroxide based etchant. An inverter made using the new design is demonstrated.

We evaluated the chemical and electrochemical corrosion resistance of ultra-thin films deposited via atomic layer deposition (ALD) for potential wafer-scale passivation of biomedical microdevices. A variety of ALD coatings can be deposited conformally on metal or silicon surfaces at low temperature. We were able to protect aluminum electrodes against corrosion in ionic media with a voltage stress of 1V for 200 hours using a double ALD film stack of 5nm Al2O3 and 5nm HfO2.

Laterally actuated nanoelectromechanical relays with compliant source-drain contacts are presented. The relay sidewalls are coated with a 30 nm-thick conductive layer of titanium nitride (TiN) deposited using atomic layer deposition (ALD). By hollowing the tip of the relay, a flexible sidewall is formed from the thin TiN that results in a larger contact area and therefore improves the contact properties of the relay. This modification improves the on-state resistance (RON) and also provides better stability over a larger number of switching cycles compared to a rigid contact. The results of life-time tests show that the contact resistance increases with the number of switching cycles possibly due to degradation of the contact material. However, flexible contacts show improved contact resistance stability under cyclic contact.

We report the realization of coalescent free-standing ultra-thin (as thin as 5.5 nm) platinum layers deposited via plasma-enhanced atomic layer deposition and their characterization as an uncooled infrared detector. Such thin platinum thermistors enable a responsivity as high as 2 · 107 V/WA, an estimated noise equivalent temperature difference of 163 mK and thermal time constants on the order of 1 ms.

CuPc-based organic thin-film transistor (OTFT) with high-k dielectric HfAlO as gate dielectric prepared by atomic layer deposition has been fabricated. Experimental results show that the HfAlO-OTFT has higher mobility, smaller sub-threshold slope and larger on/off ratio than the HfO 2 sample. All these should be attributed to the addition of Al into the HfO 2 film confirmed by X-ray photoelectron spectroscopy, resulting in improved dielectric and interfacial properties. Moreover, the reliablity of the device upon exposure to air is investigated.