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2. Calibration of second harmonic generation technique to probe the field-effect passivation of Si(100) with Al2O3 dielectric layers.

Author

Obeid, B., Bastard, L., Bouchard, A., Aubriet, V., Jouannic, K., Le Cunff, D., Gourhant, O., and Ionica, I.

Subjects
PASSIVATION, SECOND harmonic generation, DIELECTRICS, CALIBRATION, SEMICONDUCTORS, ALUMINUM oxide
Abstract

Optical second harmonic generation (SHG) can be employed to characterize the passivation quality of semiconducting material interfaces. The interface electric field (EDC) related to the existing charges at and near the interface, including the fixed oxide charges Qox, gives rise to the electric field induced second harmonic phenomenon. In this paper, we calibrate the SHG response for EDC measurement, using Al2O3/SiO2/Si(100) samples with different Qox. To perform this calibration, SHG and capacitance-voltage measurements (to access the electrical field of the samples) were made. The experimental results match well the simulated calibration curve, proving the potential of the SHG as stand-alone characterization technique for dielectric stacks on Si. [ABSTRACT FROM AUTHOR]

Published
2024
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5. Second harmonic generation in centrosymmetric multilayered structures: Theoretical approach for nonlinear boundary conditions.

Author

Obeid, B., Ionica, I., Vitrant, G., Damianos, D., and Bastard, L.

Subjects
*SECOND harmonic generation, *NONLINEAR optics, *OPTOELECTRONIC devices
Abstract

Second harmonic generation (SHG) is used to characterize the interfaces of centrosymmetric materials typically used in microelectronic/optoelectronic devices. For such applications, the materials are actually multi-layer stacks, and in this case, the SHG can be difficult to interpret and model. This paper presents the theory of the second harmonic light generated from multilayer structures. The focus is on describing the nonlinear boundary conditions at the interfaces between two different materials, taking into account the distinct contributions of bulk and interface regions. Using these conditions, it is possible to calculate the second harmonic signal from any stack of materials. In this paper, we address stacks containing silicon (100) because it is a material with numerous applications. The nonlinear polarization expressions of the surface and bulk of Si(100), according to Sipe et al. [Phys. Rev. B 35, 1129 (1987)], were integrated into nonlinear boundary conditions in order to determine transmitted and reflected second harmonic waves. An analytical validation was performed on the simple case of an air–silicon interface. For multilayered stacks, the model was compared with experimental results obtained on samples corresponding to pragmatic substrates widely used in microelectronic and optoelectronic applications. [ABSTRACT FROM AUTHOR]

Published
2023
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14. A Selection of SOI Puzzles and Tentative Answers

Author

Cristoloveanu, S., Bawedin, M., Na, K.-I., Van Den Daele, W., Park, K.-H., Pham-Nguyen, L., Wan, J., Tachi, K., Chang, S.-J., Ionica, I., Diab, A., Bae, Y.-H., Chroboczek, J. A., Ohata, A., Fenouillet-Beranger, C., Ernst, T., Augendre, E., Le Royer, C., Zaslavsky, A., Iwai, H., Nazarov, Alexei, editor, Colinge, J.-P., editor, Balestra, Francis, editor, Raskin, Jean-Pierre, editor, Gamiz, Francisco, editor, and Lysenko, V.S., editor

Published
2011
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18. Nanotechnologies and Nanoelectronics

Author

Montes, L., Clerc, R., Ionica, I., Balestra, F., Tsamados, D., Pernot, E., Cornu, S., Schaeffer, C., Marchi, F., Chevrier, J., Ionescu, Adrian M., editor, Declercq, Michel, editor, Kayal, Maher, editor, and Leblebici, Yusuf, editor

Published
2004
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20. 3D sequential integration: applications and associated key enabling modules (design & technology)

Author

Batude, P., primary, Billoint, O., additional, Thuries, S., additional, Malinge, P., additional, Fenouillet-Beranger, C., additional, Peizerat, A., additional, Sicard, G., additional, Vivet, P., additional, Reboh, S., additional, Cavalcante, C., additional, Brunet, L., additional, Ribotta, M., additional, Brevard, L., additional, Garros, X., additional, Frutuoso, T. Mota, additional, Sklenard, B., additional, Lacord, J., additional, Kanyandekwe, J., additional, Kerdiles, S., additional, Sideris, P., additional, Theodorou, C., additional, Lapras, V., additional, Mouhdach, M., additional, Gaudin, G., additional, Besnard, G., additional, Radu, I., additional, Ponthenier, F., additional, Farcy, A., additional, Jesse, E., additional, Guyader, F., additional, Matheret, T., additional, Brunet, P., additional, Milesi, F., additional, Van-Jodin, L. Le, additional, Sarrazin, A., additional, Perrin, B., additional, Moulin, C., additional, Maitrejean, S., additional, Alepidis, M., additional, Ionica, I., additional, Cristoloveanu, S., additional, Gaillard, F., additional, Vinet, M., additional, Andrieu, F., additional, Arcamone, J., additional, and Ollier, E., additional

Published
2021
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22. Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation.

Author

Damianos, D., Vitrant, G., Kaminski-Cachopo, A., Bouchard, A., Mescot, X., Gri, M., Cristoloveanu, S., Ionica, I., Blanc-Pelissier, D., Ghibaudo, G., Lei, M., and Changala, J.

Subjects
SECOND harmonic generation, PASSIVATION, INDUCTIVE effect, CAPACITANCE-voltage characteristics, KELVIN probe force microscopy
Abstract

This paper investigates the ability of second harmonic generation (SHG) to probe the passivation quality of atomic layer deposited Al2O3 on Si by estimating the induced interface electric field due to fixed charges in the oxide. Samples with various oxide charges (Qox) and interface state densities (Dit) were fabricated, using different deposition parameters. The samples were characterized by capacitance-voltage (C-V) and microwave photoconductance decay measurements in order to evaluate Qox and Dit, as well as the effective minority carrier lifetime τeff. The SHG results were consistent with Qox, Dit, and τeff values, proving the ability of the technique to monitor the interfacial quality in a contactless and non-destructive way. Optical simulations which use the electric field values obtained from the C-V measurements could reproduce the measured SHG signal. This demonstrates that SHG coupled with optical simulation can give access to the electric field magnitude and thus characterize the electrical properties of oxide/Si interfaces. [ABSTRACT FROM AUTHOR]

Published
2018
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23. A Selection of SOI Puzzles and Tentative Answers

Author

Cristoloveanu, S., primary, Bawedin, M., additional, Na, K.-I., additional, Van Den Daele, W., additional, Park, K.-H., additional, Pham-Nguyen, L., additional, Wan, J., additional, Tachi, K., additional, Chang, S.-J., additional, Ionica, I., additional, Diab, A., additional, Bae, Y.-H., additional, Chroboczek, J. A., additional, Ohata, A., additional, Fenouillet-Beranger, C., additional, Ernst, T., additional, Augendre, E., additional, Le Royer, C., additional, Zaslavsky, A., additional, and Iwai, H., additional

Published
2011
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26. Interface trap density evaluation on bare silicon-on-insulator wafers using the quasi-static capacitance technique.

Author

Pirro, L., Ionica, I., Ghibaudo, G., Mescot, X., Faraone, L., and Cristoloveanu, S.

Subjects
*SILICON-on-insulator technology, *CAPACITANCE-voltage characteristics, *METAL oxide semiconductor field-effect transistors, *SILICON wafers, *QUASISTATIC processes, *CHARGE density waves, *INTERFACES (Physical sciences)
Abstract

This paper presents a detailed investigation of the quasi-static capacitance-voltage (QSCV) technique in pseudo-metal-oxide-semiconductor field effect transistor (pseudo-MOSFET) configuration for evaluating the interface quality of bare silicon-on-insulator (SOI) wafers, without processing dedicated metal-oxide-semiconductor (MOS) test devices. A physical model is developed that is capable of explaining the experimental results. In addition, frequency effects are used to validate the equations by a systematic comparison between experimental and calculated characteristics, as well as by a direct comparison with the standard high-low frequency approach. An extraction procedure for interface trap density based solely on QSCV experimental results is proposed, and limits of the procedure are discussed. The proposed experimental and analytical procedure is demonstrated by characterizing SOI structures with different geometries and with different qualities of surface passivation of the top silicon film. [ABSTRACT FROM AUTHOR]

Published
2016
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28. Photo-pseudo-metal-oxide-semiconductor field effect transistor for characterization of surface recombination in silicon on insulator materials.

Author

Daanoune, M., Diab, A., Sirajeddine, S., Kaminski-Cachopo, A., Ionica, I., Papaioannou, G., and Cristoloveanu, S.

Subjects
METAL oxide semiconductor field-effect transistors, FIELD-effect transistors, ELECTRIC insulators & insulation research, SILICON films, COMPUTER simulation
Abstract

One of the main issues in the characterization of silicon on insulator (SOI) substrates is to determine the quality of the film-buried oxide interface. This interface quality is strongly connected to the carrier lifetime in the silicon film. In this paper, we extend the well-known pseudo-MOSFET characterization technique for SOI wafers to the extraction of carrier lifetime. The experiment consists in comparing the drain current measured under dark and under laser shining. A model is proposed to evaluate the surface recombination velocity in SOI. Experimental results are validated by numerical simulations. [ABSTRACT FROM AUTHOR]

Published
2013
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32. Quasi-static capacitance measurements in pseudo-MOSFET configuration for Dit extraction in SOI wafers

Author

Pirro, L., Ionica, I., Mescot, X., Cristoloveanu, S., Ghibaudo, G., Faraone, L., Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), School of Electrical, Electronic and Computer Engineering [Crawley] (EECE), and The University of Western Australia (UWA)

Subjects
SOI, quasi-static, Hardware_INTEGRATEDCIRCUITS, capacitance measurement, Hardware_PERFORMANCEANDRELIABILITY, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, interface trap density, pseudo-MOSFET
Abstract

session poster; International audience; We investigate for the first time the quasi-static capacitance technique in pseudo-MOSFET configuration for the characterization of bare SOI wafers. We show the difference between the measurements performed with slow and fast ramp speed and compare them with split-CV characteristics. We discuss the impact of experimental parameters such as ramp speed, probe pressure and number of probes. Finally, we present an experimental procedure, based on an original physical model, to extract the interface trap density.

Published
2015

33. Surface effects on split C-V measurements on SOI wafers

Author

Pirro, L., Ionica I., gerard ghibaudo, Sorin Cristoloveanu, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), and Rasolofoniaina, Brigitte

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

session SOI MOSFET CharacterizationO13; International audience; The experimental conditions for split C-V technique in pseudo-MOSFET configuration are investigated. Previous studies showed that the capacitance variation with frequency is dominated by the equivalent RC circuit describing the channel formation. Therefore, an extrapolation of interface trap density was not possible. Here, we demonstrate that the conductance term, measured at low frequency as a function of gate bias, is clearly influenced by the quality of the top wafer surface, potentially leading to the evaluation of interface traps.

Published
2014

37. A new extraction method for estimating the bonding quality of metal bonding wafers

Author

Liu, F.Y., Di Cioccio, L., Ionica, I., Guo, Y., Cristoloveanu, S., Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de recherches sur la catalyse et l'environnement de Lyon (IRCELYON), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), ISEP, Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), and Rasolofoniaina, Brigitte

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

Section 1: Parameter extraction and measurements; International audience

Published
2013

38. Pseudo-MOSFET under illumination: a novel method for extraction of carrier lifetime

Author

Daanoune, M., Sirajeddine, S., Diab, A., Kaminski-Cachopo, A., Ionica, I., Cristoloveanu, S., Rasolofoniaina, Brigitte, ISEP, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

Section 1: Parameter extraction and measurements; International audience

Published
2013

39. Photo-pseudo-metal-oxide-semiconductor field effect transistor for characterization of surface recombination in silicon on insulator materials

Author

Daanoune, M. Diab, A. Sirajeddine, S. Kaminski-Cachopo, A. Ionica, I. Papaioannou, G. Cristoloveanu, S.

Abstract

One of the main issues in the characterization of silicon on insulator (SOI) substrates is to determine the quality of the film-buried oxide interface. This interface quality is strongly connected to the carrier lifetime in the silicon film. In this paper, we extend the well-known pseudo-MOSFET characterization technique for SOI wafers to the extraction of carrier lifetime. The experiment consists in comparing the drain current measured under dark and under laser shining. A model is proposed to evaluate the surface recombination velocity in SOI. Experimental results are validated by numerical simulations. © 2013 AIP Publishing LLC.

Published
2013

43. Selected SOI puzzles and tentative answers

Author

Na, K.-I., Van Den Daele, W., Pham-Nguyen, L., Bawedin, M., Park, K.-H., Wan, J., Tacchi, K., Chang, S.-J., Ionica, I., Bae, Y.-H., Chroboczek, J.-A., Fenouillet-Beranger, C., Ernst, T., Augendre, E., Le Royer, C., Zaslavsky, A., Iwai, H., Cristoloveanu, S., Domenget, Chahla, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2010

44. Characterization of Silicon-On-Insulator films with pseudo metal-oxide-semiconductor field-effect transistor: correlation between contact pressure, crater morphology and series resistance

Author

Savin, I., Ionica, I., Van Den Daele, W., Nguyen, T., Mescot, X., Cristoloveanu, S., Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), and Domenget, Chahla

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2008

49. ADVANCED SOLUTIONS FOR MOBILITY ENHANCEMENT IN SOI MOSFETS

Author

PHAM-NGUYEN, L., primary, FENOUILLET-BERANGER, C., additional, PERREAU, P., additional, DENORME, S., additional, GHIBAUDO, G., additional, FAYNOT, O., additional, SKOTNICKI, T., additional, OHATA, A., additional, CASSE, M., additional, IONICA, I., additional, VAN DEN DAELE, W., additional, PARK, K-H., additional, CHANG, S-J., additional, BAE, Y-H., additional, BAWEDIN, M., additional, and CRISTOLOVEANU, S., additional

Published
2013
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