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6. Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part I: Experimental Study

7. Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part II: Physics-Based Modeling

11. Unveiling Retention Physical Mechanism of Ge-rich GST ePCM Technology

19. BEOL Process Effects on ePCM Reliability

23. Improving Ge-rich GST ePCM reliability through BEOL engineering

29. Transient simulation of delay and switching effects in phase-change memories

30. Statistics of resistance drift due to structural relaxation in phase-change memory arrays

33. A new NBTI model based on hole trapping and structural relaxation in MOS dielectrics

34. Nanosession: Valence Change Memories - Redox Mechanism and Modelling

41. A Volatile RRAM Synapse for Neuromorphic Computing

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