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TiAlCuN coatings were deposited by reactive magnetron sputtering on substrates of single-crystal silicon, and Titanium Grade2 wafers. To control and manage the coating deposition process by reactive magnetron sputtering, a previously developed modular gas flow control complex (MGFCC) was used. The elemental composition was studied by energy-dispersive X-ray spectroscopy (EDX). The structural-phase state of coatings was examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Mechanical properties, such as hardness and Young’s modulus, were investigated by the nanoindentation using a CSM Instruments Nanohardness Tester NHT2 (Switzerland). The influence of deposition parameters such as: Ti and Al content, reactivity degree α, and nitride concentration on structure and mechanical properties was considered. It was found that a decrease in the reactivity degree α from 0.605 to 0.474 leads to a 23 % increase in the deposition rate of TiAlCuN coating. It was detected that adding Cu to the coating content decreases the mean sizes of crystallites and growth columns in comparison with the TiAlN analogues due to its segregation along crystalline boundaries and thus advances better mechanical characteristics. The hardness of TiAlCuN coatings varies in the range of H = 29.3–35.4 GPa, Young’s modulus E = 235.9–267.6 GPa. The impact strength index as the H / E∗ ratio and the plastic deformation resistance index H3 / E∗2 were calculated. The formed nitride coatings are suitable for use in space technologies.

Titanium aluminium nitride (TiAlN) is a promising material for space application as protective, radiation-resistance coatings. During the operation in space such coatings are exposed to the flux of energetic particles. We present the results of the proton irradiation effect on the mechanical, structural, and optical properties of the TiAlN coating deposited by reactive magnetron sputtering. The irradiation with fluence of 5 · 1016 ion/cm2 results in an increase of Young՚s modulus and nanohardness above the superhard level, while a further fluence increase (up to 2 · 1017 ion/cm2 ) results in a decrease of these parameters. Surface smoothing after proton irradiation has been demonstrated by profilometry. It is shown that irradiation with protons results in an increase of specular reflectance. Diffuse reflectance increases to a lesser extent and only after irradiation with relatively low proton fluences ((2–5)· 1016 ion/cm2 ).

Nanostructured TixCr1–xN coatings of various compositions 0.58 ≤ x ≤ 0.8 on the substrates made of AISI 304 stainless steel and monocrystalline silicon were formed by the method of separable vacuum-arc deposition. The elemental composition was studied by Rutherford backscattering spectrometry of helium ions. The structural-phase state and the morphology were examined by X-ray diffraction, optical and scanning electron microscopy, tribomechanical tests of the initial coatings were also carried out. The radiation tolerance of the nanostructured TixCr1–xN coatings within 0.58 ≤ x ≤ 0.8 under He+ ion irradiation with an energy of 500 keV in the fluence range of 5·1016–3·1017 ions/cm2 was studied for the first time. It was found that the TixCr1–xN coatings within 0.58 ≤ x ≤ 0.8 withstand irradiation without significant changes in the structure up to a fluence of 2·1017 ions/cm2, when a partial coating flaking (exfoliation) up to a depth of the projected range of helium ions takes place. A decrease in the average size of crystallites of coatings and the crystal lattice period reduction after radiation exposure were detected. The decrease in the microhardness of the TixCr1–xN coatings of all compositions after irradiation was found.

The article presents the results of studies of elastomers modified by multilayer carbon nanotubes (MCNTs). An elastomer, polydimethylsiloxane, served as the polymer base while MCNTs synthesized on Co–Mo/Al2O3–MgO and Fe–Co/2.1Al2O3 catalysts were used as a filler. The structural analysis of particle sizes of MCNTs was carried out. It showed that MCNTs synthesized on Co–Mo/Al2O3–MgO catalysts have the outer diameter of 25–35 nm and the inner diameter of 10–15 nm, while MCNTs synthesized on Fe–Co/2.1Al2O3 catalysts have the outer diameter of 5–15 nm and the inner diameter of 5–7 nm. The electrical conductivity of the heating elements samples was studied. The maximum electrical conductivity (1.66×10–1 Sm/cm) was observed for a composite based on polydimethylsiloxane modified with 7 wt % MCNTs (synthesized on the Co–Mo/Al2O3–MgO catalyst) while the sample modified with MCNTs (synthesized on the Fe–Co/2.1Al2O3 catalyst) had the maximum heat release rate coupled with evenly distributed heat flow pattern. The maximum heating temperature of 102°C corresponded to a constant voltage of 18–24 V. The studies of electromagnetic radiation interaction with the samples were executed. In those studies, heating element samples made of MCNTs (synthesized on the Fe–Co/2.1Al2O3 catalyst) demonstrated wide-band attenuation of impinging radiation (up to 20%) while heating element samples made of MCNTs (synthesized on the Co–Mo/Al2O3–MgO catalyst) showed the ability of electromagnetic shielding in the range of 26 to 40 GHz at the level of 15%.

This work presents a study of the conditions and possibilities for the intercalation of hexafluorophosphate anions into CNT-based electrodes. For this, cathodes based on CNTs synthesized on different catalysts (Co–Mo)/(Al2O3–MgO) and (Fe–Co)/2.1Al2O3 were produced. As a result, electrode materials were obtained at various concentrations of CNT/graphite: CNT-4F, CNT-6, and CNT-6F. The resulting electrodes were studied by cyclic voltammetry (CVA) in an electrolyte of a dissolved LiPF 6 salt based on EC : DEC (ethylene carbonate : diethylene carbonate) solvents (in the ratio 1 : 1 : 1) with an admixture of 3% VC at a sweep speed of 4 mV/s. On the basis of the obtained CVA dependences, the specific charge/discharge capacity of the electrodes CNT-4F, CNT-6, and CNT-6F was determined. The largest specific charge/discharge capacity calculated per mass of CNTs was 292 and 164.22 (mA h)/g for CNT-4/graphite electrodes, and the minimum specific charge/discharge capacity was 41.67 and 1.5 (mA h)/g for CNT-4 electrodes without graphite, respectively. Also, the dependences of the average electrode utilization coefficient on the charge time at constant current on the cycle number at a charge of 300 s were obtained. For chronoamperograms of individual steps of the СNT-6F electrode, the values of lithium diffusion coefficients were calculated.

SiO2 /Si, SiN1.2/SiO2 /Si and SiO2 /SiN0.9/SiO2 /Si structures have been fabricated by chemical vapor deposition and thermal oxidation of silicon. The elemental composition and thicknesses of dielectric layers have been studied using Rutherford backscattering spectroscopy, scanning electron microscopy, and spectral ellipsometry. The electroluminescence (EL) of the samples has been investigated in the “electrolyte–dielectric–semiconductor” system at a positive bias voltage applied to the silicon substrate. An intense band with maxima at 1.9 eV appears on the EL spectra of the SiO2 /Si sample, while the EL spectra of the SiN1.2/SiO2 /Si and SiO2 /SiN0.9/SiO2 /Si samples are characterized by the presence of bands with the maximum values of 1.9, 2.3 and 2.7 eV. The nature of these bands is discussed. Passing a charge in the range of 100–500 mC/ cm2 through the SiO2 /SiN0.9/SiO2 /Si sample, an increase in the EL intensity was recorded in the entire visible range. Passing a charge of 1 C/cm2 through a sample with a three-layer dielectric film resulted in the EL intensity decrease. It can be explained by the upper oxide layer degradation. It has been shown that silicon nitride deposited on top of the SiO2 layer protects the oxide layer from field degradation and premature breakdown. The most stable electroluminescence when exposed to a strong electric field is observed for the structure SiN1.2/SiO2 /Si.

Effect of regimes of fabrication of nanostructured polymer composites filled with carbon nanotubes on electrophysical characteristics is analyzed. Dependence of the conductivity of composites in a frequency interval of 50 Hz–5 MHz and a temperature interval of 15–375 K on the dimensional effect of multi-walled carbon nanotubes, method for functionalization, and method for ultrasonic processing is studied. It is shown that different effects of electric transport in composites affect the resulting conductivity. The best electrophysical parameters are obtained with the aid of noncovalent functionalization of nanotubes and focused ultrasound treatment. The method makes it possible to obtain a composite conductivity of 0.01 S/сm in the specified frequency interval at a filler concentration of 0.5 wt %.

The electrophysical properties and the resistive switching effect in ITO/SiNx/Si memristor structures have been investigated. A silicon nitride film ~200 nm thick with a Si/N ratio varying with depth has been deposited on a silicon substrate by chemical vapor deposition. The current–voltage characteristics of ITO/SiNx/Si-p structures have shown that the conduction mechanism in a high-resistivity state depends on the properties of the nitride film and is described in terms of the Pool–Frenkel model, which takes into consideration electron hops between neighboring traps. When the polarity of the voltage applied to the structure changes sign, conducting channels in the nitride film break down and the structure switches over to a high-resistivity state. The photoswitching effect has been discovered in the ITO/SiNx/Si structure, which opens up a new frontier for using memristors in silicon optoelectronic devices.

CdTe and CdO nanocrystals were synthesized by chemical deposition into a-SiO2/n-Si ion track template formed by 200 MeV Xe ion irradiation with the fluence of 108 ions/cm2. Depending on the temperature of the solution CdTe + CdO and single-phase CdO with a hexagonal crystal structure were obtained, respectively. The study of the current – voltage characteristics of the obtained structure with the single-phase CdO allows us to estimate the number of grain boundaries and the height of the potential barrier, as well as the n-type conductivity.

The heat effects at flow of direct current in nanomodified elastomers of two types (polyurethane and silicone compounds) were investigated. The multiwalled carbon nanotubes (MWCNT) synthesized over the (Co–Mo)/(Al2O3–MgO) and (Fe–Co)/2.1Al2O3 catalysts were used for nanomodification. The particle size analysis of MWCNT was carried out because the MWCNTs with various morphological parameters were synthesized over this type of catalysts. The composite manufactured on the basis of a silicone compound modified by 7 wt % of MWCNTs synthesized over the (Co–Mo)/(Al2O3–MgO) catalyst has the highest electrical conductivity (1.66 × 10–1 S cm–1), and the composite manufactured from the polyurethane compound modified by 1 wt % of MWCNT synthesized over the (Fe–Co)/2.1Al2O3 catalyst has the lowest electrical conductivity (6 × 10–10 S cm–1). Variations in heat dissipations for various types of elastomers modified by MWCNT were detected by using the noncontact method of measuring of temperature field on the surface of samples. The manner of stabilized heat dissipation which is natural for the materials with a positive temperature coefficient of resistance was found. The highest intensity of heat dissipations combined with uniform distribution of the temperature field was observed for the samples manufactured on the basis of a silicone compound containing 7 wt % of the MWCNTs synthesized over the (Fe–Co)/2.1Al2O3 catalyst. The maximum heating temperature for the sample operating under the voltage of 6 V of direct current was 102°C. Nonuniformity of heat dissipations is specific to almost all samples manufactured on the basis of the polyurethane compound. In this case, the samples based on the silicone compound demonstrate uniform heating at any level of filling by the MWCNTs. As a part of the study, a honey-combed sample was obtained, which, under the voltage of 6 V of direct current, was heated to 100°C and had a uniform distribution of the temperature field.

The paper presents results of studies of the optical and electromagnetic properties of the WO3/rGO electrochromic nanocomposite films obtained by mechanical spraying of a water-based dispersed solution with WO3/GO particles and heat treatment (annealing) at a temperature of 300°C in an inert argon atmosphere for 24 hours. As a result, an electrically conductive phase of reduced graphene oxide rGO and crystalline WO3 were formed.

Carbon nanotubes are effective nanomodifiers – providing the formation of a variety of thermal and electrophysical properties in composite materials. The functional purpose of composite materials determines the type and concentration of carbon nanostructures. The use of carbon nanostructures in polymer composites intended for electromagnetic shielding and electrode materials of supercapacitors is a promising direction in modern materials science. The method of manufacturing a radio-absorbing composite material included impregnation of a polyurethane foam billet – an aqueous composite suspension consisting of water, an acrylic copolymer, and carbon nanotubes "Taunit-MD". Structural studies of carbon nanotube samples were performed using transmission and scanning electron microscopy. To do this, PAM and SAM studies were performed using a HitachiH-800 electron microscope with an accelerating voltage of up to 200 Kev. For research purposes, electrodes with an area of 2 cm2 were made from carbon materials. Active mass was prepared from a carbon material and a binder, polivinildenftorid. Show PEM and SAM micrographs for samples of carbon nanotubes with the commercial name "Taunit-M". In this case, carbon nanotubes are characterized by smaller thicknesses in the range of 10-20 nm with a preferred average size of 12-15 nm. The structure of the tubes is very defective. The thickness of the tubes varies in some areas (not exceeding hundreds of nm) by more than 2 times. Carbon nanotubes have an irregular shape-there are processes, bends. The analysis of the obtained results allows us to conclude that the characteristic of the reflected EMI signal demonstrated by the pyramidal RPM is close in its values to that of the free space. At the same time, in comparison with the free space, there is a slight weakening (3-4) dB of the reflection coefficient. Carbon nanotubes MD has characteristics that exceed the carbon fabric "busofit" in terms of specific mass capacity, but inferior to it in terms of specific surface capacity. In addition, this advantage completely disappears at high current densities, which may be the result of a closed macrostructure and requires further optimization of the electrode manufacturing technology

The paper is purposed to establish the principles of the micro-structural changes of Pt-Si system during the rapid thermal treatment. The Pt films 43.7 nm thick were applied on the substrates of mono-crystal silicon KEF 0.5 with orientation (111) by means of the magnetron platinum target sputtering (purity of 99.95 %) on the unit MPC 603 with the cryogen pumping to the pressure of no less than 5∙10-5 Pa. Argon was used as a working medium, whose purity constituted 99.933 %. Rapid thermal treatment was performed in the mode of the thermal balance with irradiation of the reverse side of the wafer by means of the non-coherent light flow in the nitrogen medium within the temperature range from 200 to 550 °C with a step of 50 °С during 7 s. In parallel, the solid phase synthesis was performed of platinum silicide by means of the standard method with application of the continuous single stage thermal treatment in the analogue medium (T = 550 °C, t = 30 min). Temperature monitoring was performed by means of the thermal couple method with accuracy of ±0.5 °C. The grain size was determined by the translucent electron microscopy method. Thickness of platinum silicide under formation, its surface micro-relief and the separation boundaries with silicon were determined by means of the raster electron microscopy. It is demonstrated, that with the rise of the rapid thermal treatment one can observe growth of the platinum film on silicon. A comparative analysis was conducted of the average size of grains, micro-relief of the PtSi surface and its separation boundary with silicon for two methods of its formation with application of the rapid thermal treatment and with application of the traditional continuous thermal treatment at the temperature of 550 °C during 30 min in the nitrogen atmosphere. By means of the raster electron microscopy method it is demonstrated, that size of the micro-relief on the separation boundary of PtSi-Si does not exceed 15.9 nm and the size of grains is 37.7 nm. This is in 2.5 and 3.1 times smaller, then in the case of the traditional single stage continuous thermal treatment.

The spectral dependences (λ = 0.35–1.0 μm) of transmittance and reflectance R of binary TiAlN nitride thin films deposited by magnetron sputtering of the target on glass substrates and on Si wafers have been measured. TiAlN/Si films 0.5 μm thick were exposed to single nanosecond (70 ns) pulses of ruby laser radiation in order to study the effect of thermophysical processes laser-induced in TiAlN on the dynamics of R(t) at probe wavelengths λ1 = 0.53 μm and λ2 = 1.06 μm and on the state of the zones of laser irradiation, which was studied by optical and scanning electron microscopy. The dynamic change of R increase at λ1 and decrease at λ2 associated with pulsed heating of the film and which is observed in the experiment increases as irradiation energy density W increases with the approach to the threshold energy of laser ablation of nitride of ~1 J/cm2. Laser-induced thermophysical processes occurring at W = 0.6–0.9 J/cm2 lead to specific modification of the TiAlN layer with the formation of a grid of cracks due to thermal stresses arising during the action of the laser pulse. Increasing W results in a more developed cellular/mesh film structure characterized by a smaller average cell size.

With the development of nuclear industry, the requirements for materials capable of operating under the conditions of ionizing radiation have increased. Such materials are nitride coatings based on titanium and chromium. In the work, using X-ray diffraction, X-ray microanalysis, nanoindentation method of Oliver and Farr, scratch testing, the structural phase state and the mechanical properties of nanostructured Cr–N and Ti–Cr–N coatings formed by vacuum-arc deposition from filtered plasma on substrates of steel 12X18H10T and alloy Zr2.5%Nb are investigated. It is established that the coating based on titanium and chromium has a single-phase structure (Ti,Cr)N with a face-centered cubic crystal lattice (FCC), and the coating based on chromium consists of chromium nitride CrN (FCC). It is shown that the Ti–Cr–N coating has greater hardness and toughness than the Cr–N coating. The Ti–Cr–N coating, due to its alloying with Ti atoms, has a higher adhesive strength as compared to the Cr–N coating. At the same time, in the Ti–Cr–N coating, the adhesive strength for a substrate made of Zr2.5%Nb alloy is ≈2 times greater than for a substrate based on steel 12X18H10, which may be associated with the formation of solid solutions between Ti and Zr elements. It is shown that on the contrary, the Cr–N coating can withstand heavy loads before tearing from a substrate based on steel 12X18H10T than from that based on a Zr2.5%Nb alloy. On the basis of the obtained data, one can say about the positive effect on the mechanical properties of titanium additive in the chromium-based coating composition.

The light-emitting properties of Si-rich silicon nitride films deposited on the Si (100) substrate by plasma-enhanced (PECVD) and low-pressure chemical vapor deposition (LPCVD) have been investigated. In spite of the similar stoichiometry (SiN1.1), nitride films fabricated by different techniques emit in different spectral ranges. Photoluminescence (PL) maxima lay in red (640 nm) and blue (470 nm) spectral range for the PECVD and LPCVD SiN1.1 films, respectively. It has been shown that equilibrium furnace annealing and laser annealing by ruby laser (694 nm, 70 ns) affect PL spectra of PECVD and LPCVD SiN1.1 in a different way. Furnace annealing at 600 °C results in a significant increase of the PL intensity of the PECVD film, while annealing of LPCVD films result only in PL quenching. It has been concluded that laser annealing is not appropriate for the PECVD film. The dominated red band in the PL spectrum of the PECVD film monotonically decreases with increasing an energy density of laser pulses from 0.45 to 1.4 J/cm2. Besides, the ablation of PECVD nitride films is observed after irradiation by laser pulses with an energy density of > 1 J/cm2. This effect is accompanied by an increase in blue emission attributed to the formation of a polysilicon layer under the nitride film. In contrast, the LPCVD film demonstrates the high stability to pulsed laser exposure. Besides, an increase in the PL intensity for LPCVD films is observed after irradiation by a double laser pulse (1.4 + 2 J/cm2) which has not been achieved by furnace annealing.

The authors have given results of investigations into the structural and optical properties of InAs nanoclusters formed by the ion-implantation method in silicon and silica matrices. The influence of the heat treatment at a temperature of 900°C and of the irradiation with Xe ions with an energy of 167 MeV and a fluence of 3·1014 cm–2 on the structure and photoluminescence of the formed systems has been found. In the case of the system ″InAs in SiO2″ the irradiation with Xe ions leads to an enhancement of the intensity and a broadening of the luminescence spectrum in the visible spectral region (550–750 nm). The ordering of the nanoclusters and their stretching along the path of the Xe ions in the SiO2 matrix has been found.

Work is performed within a cascade and probabilistic method which essence consists in receiving and further usage of the cascade and probabilistic functions (CPF) for various particles. CPF make sense to probability that the particle generated at some depth of h’ will reach a certain depth of h after n number of impacts. In work optimization calculation algorithms of the cascade and probabilistic functions (CPF) depending on interactions number and particles penetration depth is offered, concentration of radiation defects at ionic radiation for the purpose of reduction calculation time and quality. For calculation CPF and concentration radiation defects there is an area of result, border of this area and a calculation step. Borders and a calculation step selection automation is executed.

ZnSe nanocrystals have been formed in the silicon dioxide matrix by the sequential high-fluence implantation of Zn + and Se + ions at 500 °C. After implantation a part of samples was annealed at 1000 °C for 3 min using rapid thermal annealing. Structural and optical properties of ZnSe/SiO 2 nano-composite films were analyzed by means of Rutherford Backscattering Spectrometry, cross-sectional Transmission Electron Microscopy, Raman scattering and photoluminescence techniques. It was shown that a sequence of implantation affects structural and optical properties of synthesized ZnSe clusters. Based on the Raman scattering and photoluminescence data the samples for which Zn ions were implanted first exhibited a better ZnSe crystalline quality than those of reverse sequence of implantation, i.e. with Se ions implanted at the beginning. The bands of blue ZnSe band edge emission and green-red ZnSe deep defect level emission were revealed in the PL spectra of the as-implanted and annealed nano-composites. The PL spectral features observed in the blue region are due to the quantum-size effects in the ZnSe nanocrystals embedded into the silicon dioxide matrix. The PL intensity ratio of the deep defect band to the near edge emission is higher in the samples first implanted with Se ions, and Zn ions implanted next. The effect of rapid thermal annealing on structural and light-emitting properties was discussed.

The two triple-layered SiO 2 /SiN x /SiO 2 structures with Si-rich and N-rich silicon nitride active layer were fabricated on p -type Si-substrates by chemical vapour deposition. The SiN x layer of different composition ( x = 0.9 and x = 1.4) was obtained by changing the ratio of the SiH 2 Cl 2 /NH 3 flow rates during deposition of a silicon nitride active layer (8/1 and 1/8, respectively). The spectroscopic ellipsometry and photoluminescence (PL) measurements showed that the refractive index, the absorbance and luminescence properties depend on a chemical composition of silicon nitride layers. The structures with Si-rich and N-rich SiN x active layers emit in the red (1.9 eV) and blue (2.6 eV) spectral ranges, respectively. The PL intensities of different structures are comparable. The rapid thermal annealing results in the intensity decrease and in the PL spectra narrowing in the case of SiN 1,4 active layer, whereas the increase in the emission intensity and the PL spectra broadening are observed in the case of the annealed sample with a SiN 0,9 active layer. The PL origin and the effect of annealing treatment have been discussed, taking into account the band tail mechanism of radiative recombination. Multilayered (SiO 2 /SiN x ) n /Si structures are of practical interest for creation of effective light sources on the basis of current Si technology.

Structural and optical properties of SiO2 (600 nm)/Si films successively implanted with two types of ions (Zn and Se) or three types of ions (Zn, Se and S) and afterwards annealed at 900 °C were investigated. RS, PL and TEM methods were used to characterize A2B6 nanocrystals synthesized in SiO2 matrix. The Raman spectra recorded using an excitation with two different laser lines (355 and 473 nm) have shown the formation of ZnSe nanocrystals after a double implantation of Zn and Se ions, while ZnSxSe1−x nanoclusters have been synthesized after a triple implantation of Zn, Se and S ions. Based on Raman spectra recorded with blue and UV excitations, the possible sulfur content (x ≈ 0.4) has been estimated for synthesized ternary alloy. The intensive PL bands for SiO2 films implanted with (Zn, Se, S) and (Zn, Se) were detected in the blue and red spectral ranges, respectively.

Till now, shape elongation phenomenon was observed predominantly for metal nanoparticles irradiated with swift heavy ions (SHI). For the first time, we report the shape elongation of InAs and Zn(core)/ZnO(shell) nanoparticles (NPs) embedded in a silica matrix and irradiated with swift Xe ions. In case of InAs NPs, SHI irradiation results in the formation of nanorods. A diversity of elongated features is observed for Zn-based NPs: chains of small ZnO clusters, elongated (Zn)core/(ZnO)shell structures and drop-like elongated Zn particles. The intense sputtering of the silicon dioxide layer due to electronic excitations has revealed for “SiO2+Zn-based NPs” composite. Photoluminescence (PL) spectroscopy reveals emission in the visible range for two types of nanocomposites before SHIs irradiation. This emission is attributed to the oxygen excess-related defect (NBOHC) as well as to the oxygen deficiency-related centres created in silica matrix during the implantation of cluster-forming ions (In + As or Zn). The intensive band in the spectral region of 2.8 – 3.1 eV is observed in PL spectrum of annealed “SiO2+InAs NPs” composite. SHI irradiation results in its quenching and formation of an asymmetrical band centred at 1.9 eV. In case of “SiO2+Zn-based NPs” composite, SHIs irradiation results in substantial increase of PL in orange spectral range. The origin of observed emission is discussed.

High-fluence ion implantation has been applied to create silica-based light-emitting nanocomposite for silicon photonics. Samples of SiO2/Si have been implanted with Sn ions (80 keV, 2.5 × 1016 cm−2, 5 × 1016 cm−2 and 1 × 1017 ion/cm2) and afterwards annealed at 900 °C for 60 min in air ambient. The intense violet band at 3.2 eV dominates in photoluminescence (PL) end electroluminescence (EL) spectra. Its intensity decreases with the Sn concentration increase in silica. Besides, the PL spectra exhibit orange band which quenches after passing a charge flow (0.35C/cm2) through the samples. The origin of the observed emission as well as its degradation mechanisms are discussed.

The results of studies of the structure, stress, and hardness of Ti–N, Cr–N and Ti–Cr–N coatings deposited by the PIII&D method using the rectilinear vacuum-arc plasma filter are presented. X-ray structural analysis was used to study the effect of the pulse bias potential amplitude in the range from 0.5 to 1.5 kV on the characteristics of the coatings. In accordance with the composition of the cathode, the coatings have the nanocrystalline cubic structure TiN, CrN or solid solution (Ti, Cr)N (structural type NaCl) with axial texture [110]. The content of Cr in (Ti, Cr)N coatings is 1.5 times higher than in the cathode. It was found that the change of the pulse bias potential amplitude practically does not affect the elemental composition of the coatings. The level of compression stress and the size of crystallites in (Ti, Cr)N coatings are less than in TiN coatings obtained under similar conditions. All TiN and (Ti, Cr)N coatings have a high hardness of 29–36 GPa.

A pulsed laser treatment method has been developed and demonstrated for the formation of antireflection coatings based on composite materials with carbon nanotubes. The influence of structure surface of composite materials exposed to pulsed laser treatment on reflectivity has been carried out. The possibility of creating non-reflective surfaces of composite samples in the visible and near-IR ranges is demonstrated.

In the present work, silicon nitride, and oxide films, as well as two-layered SiNx/SiO2 and three-layered SiO2/SiNx/SiO2 structures, were fabricated on p-type Si-substrates. The structure and element composition was studied by scanning electron microscopy and Rutherford backscattering spectroscopy, respectively. It was shown, spectral positions of photoluminescence maxima, as well as edge absorption, were determined by stoichiometry of SiNx layers. No electroluminescence signal was registered from single-layered silicon nitride films. The intense band at 1.9 eV dominated the electroluminescence spectra of single-layered silica film as well as two- and three-layered structures. It was attributed to silane groups in SiO2 layers. The contribution of emission from silicon nitride layers into electroluminescence of the two- and three-layered structures is discussed.