Author: "Emiliano Pallecchi" - Searchworks@Jio Institute Digital Library Search Results

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1. Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling Transfer

Author: Soukaina Ben Salk, Reetu Raj Pandey, Phi H. Q. Pham, Di Zhou, Wei Wei, Guillaume Cochez, Dominique Vignaud, Emiliano Pallecchi, Peter J. Burke, and Henri Happy
Subjects: monocrystalline graphene, electrochemical delamination, bubble-free transfer, Raman spectroscopy, defect-free, electrical characterization, Chemistry, QD1-999
Abstract: In this work, we have investigated the influence of the transfer process on the monocrystalline graphene in terms of quality, morphology and electrical properties by analyzing the data obtained from optical microscopy, scanning electron microscopy, Raman spectroscopy and electrical characterizations. The influence of Cu oxidation on graphene prior to the transfer is also discussed. Our results show that the controlled bubbling electrochemical delamination transfer is an easy and fast transfer technique suitable for transferring large single crystals graphene without degrading the graphene quality. Moreover, Raman spectroscopy investigation reveals that the Cu surface oxidation modifies the strain of the graphene film. We have observed that graphene laying on unoxidized Cu is subject to a biaxial strain in compression, while graphene on Cu oxide is subject to a biaxial strain in tension. However, after graphene was transferred to a host substrate, these strain effects were strongly reduced, leaving a homogeneous graphene on the substrate. The transferred single crystal graphene on silicon oxide substrate was used to fabricate transmission line method (TLM) devices. Electrical measurements show low contact resistance ~150 Ω·µm, which confirms the homogeneity and high quality of transferred graphene.
Published: 2021
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2. A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology

Author: Dalal Fadil, Vikram Passi, Wei Wei, Soukaina Ben Salk, Di Zhou, Wlodek Strupinski, Max C. Lemme, Thomas Zimmer, Emiliano Pallecchi, Henri Happy, and Sebastien Fregonese
Subjects: graphene, microwave, mmic, integrated circuits, active balun, 2d materials, Technology, Engineering (General). Civil engineering (General), TA1-2040, Biology (General), QH301-705.5, Physics, QC1-999, Chemistry, QD1-999
Abstract: This paper presents the first graphene radiofrequency (RF) monolithic integrated balun circuit. It is composed of four integrated graphene field effect transistors (GFETs). This innovative active balun concept takes advantage of the GFET ambipolar behavior. It is realized using an advanced silicon carbide (SiC) based bilayer graphene FET technology having RF performances of about 20 GHz. Balun circuit measurement demonstrates its high frequency capability. An upper limit of 6 GHz has been achieved when considering a phase difference lower than 10° and a magnitude of amplitude imbalance less than 0.5 dB. Hence, this circuit topology shows excellent performance with large broadband performance and a functionality of up to one-third of the transit frequency of the transistor.
Published: 2020
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3. High-Frequency Limits of Graphene Field-Effect Transistors with Velocity Saturation

Author: Quentin Wilmart, Mohamed Boukhicha, Holger Graef, David Mele, Jose Palomo, Michael Rosticher, Takashi Taniguchi, Kenji Watanabe, Vincent Bouchiat, Emmanuel Baudin, Jean-Marc Berroir, Erwann Bocquillon, Gwendal Fève, Emiliano Pallecchi, and Bernard Plaçais
Subjects: graphene transistor, velocity saturation, high-frequency, dirac pinch-off, contact gating, Technology, Engineering (General). Civil engineering (General), TA1-2040, Biology (General), QH301-705.5, Physics, QC1-999, Chemistry, QD1-999
Abstract: The current understanding of physical principles governing electronic transport in graphene field effect transistors (GFETs) has reached a level where we can model quite accurately device operation and predict intrinsic frequency limits of performance. In this work, we use this knowledge to analyze DC and RF transport properties of bottom-gated graphene on boron nitride field effect transistors exhibiting pronounced velocity saturation by substrate hyperbolic phonon polariton scattering, including Dirac pinch-off effect. We predict and demonstrate a maximum oscillation frequency exceeding 20 GHz . We discuss the intrinsic 0.1 THz limit of GFETs and envision plasma resonance transistors as an alternative for sub-THz narrow-band detection.
Published: 2020
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4. Devices and circuits for HF applications based on 2D materials.

Author: Simon Skrzypczak, Di Zhou, Wei Wei, Dalal Fadil, Dominique Vignaud, Emiliano Pallecchi, and Henri Happy
Published: 2023
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5. Straightforward bias- and frequency-dependent small-signal model extraction for single-layer graphene FETs.

Author: Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Wei Wei, Emiliano Pallecchi, Henri Happy, and David Jiménez
Published: 2023
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6. Single-Pole-Double-Throw RF switches based on monolayer MoS2.

Author: Myungsoo Kim, Emiliano Pallecchi, Henri Happy, and Deji Akinwande
Published: 2021
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7. Record High Bandwidth Integrated Graphene Photodetectors for Communication Beyond 180 Gb/s.

Author: Daniel Schall 0003, Emiliano Pallecchi, Guillaume Ducournau, Vanessa Avramovic, Martin Otto 0003, and Daniel Neumaier
Published: 2018

8. Contact resistance Study of 'edge-contacted' metal-graphene interfaces.

Author: Vikram Passi, Amit Gahoi, Jasper Ruhkopf, Satender Kataria, F. Vaurette, Emiliano Pallecchi, Henri Happy, and Max Christian Lemme
Published: 2016
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9. 2D RF Electronics: from devices to circuits - challenges and applications.

Author: D. Fadi, Wei Wei, Emiliano Pallecchi, M. Anderson, J. Stake, Marina Deng, Sébastien Fregonese, Thomas Zimmer, and Henri Happy
Published: 2018
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10. High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors

Author: Gilles Dambrine, Emiliano Pallecchi, Marina Deng, Thomas Zimmer, Wei Wei, Dalal Fadil, Sebastien Fregonese, Magali De Matos, Henri Happy, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon-IEMN (CARBON-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), NANOELECTRONIQUE/MODEL, Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS)-Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Renatech Network, Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Carbon - IEMN (CARBON - IEMN), and Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS)-Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS)
Subjects: Radiation, Materials science, Noise measurement, Graphene, business.industry, Transistor, 020206 networking & telecommunications, 02 engineering and technology, Chemical vapor deposition, Condensed Matter Physics, Noise figure, 7. Clean energy, law.invention, chemistry.chemical_compound, chemistry, law, 0202 electrical engineering, electronic engineering, information engineering, Scattering parameters, Silicon carbide, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, business, Noise (radio)
Abstract: International audience; This article presents the small-signal and noise characterization of different technologies based on chemical vapor deposition (CVD) and silicon-carbide (SiC) graphene field-effect transistors (GFETs). The noise model, built on noise figure measurements under 50 Ω using the F 50 method, was verified by additional source-pull measurements, with special care for the GFET stability. The four noise parameters were then extracted by using the validated F 50 model up to 18 GHz, and the correlations between noise and small-signal parameters were shown for two different configurations: top-gated and back-gated GFETs.
Published: 2020
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11. Low-Frequency Noise Parameter Extraction Method for Single-Layer Graphene FETs

Author: Henri Happy, Jose A. Garrido, Nathan Schaefer, Emiliano Pallecchi, David Jiménez, Andrea Bonaccini Calia, D. Vignaud, Wei Wei, Nikolaos Mavredakis, Ramon Garcia Cortadella, Universitat Autònoma de Barcelona (UAB), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon - IEMN (CARBON - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), ICN2 - Institut Catala de Nanociencia i Nanotecnologia (ICN2), This work was supported in part by the European Union’s Horizon 2020 Research and Innovation Program under Grant GrapheneCore2 785219 (Graphene Flagship), in part by Marie Skłodowska-Curie under Grant 665919 and Grant 732032 (BrainCom), in part by the Spanish Government under Project TEC2015-67462-C2-1-R, Project RTI2018-097876-B-C21 (MCIU/AEI/FEDER, UE), and Project 001-P-001702 (RIS3CAT), and in part by the French RENATECH network. The ICN2was supported by the Severo Ochoa Centers of Excellence Program funded by the Spanish Research Agency (AEI), under Grant SEV-2017-0706, Renatech Network, European Project: 785219,H2020,GrapheneCore2(2018), and Carbon-IEMN (CARBON-IEMN)
Subjects: Infrasound, FOS: Physical sciences, Applied Physics (physics.app-ph), Parameter extraction, Lambda, 01 natural sciences, Noise (electronics), Omega, law.invention, Graphene transistor, Low-frequency noise, law, Compact model, 0103 physical sciences, Electrical and Electronic Engineering, parameter extraction, 010302 applied physics, Physics, Condensed matter physics, Velocity saturation, Transistor, Contact resistance, Physics - Applied Physics, low-frequency noise (LFN), graphene transistor (GFET), [SPI.TRON]Engineering Sciences [physics]/Electronics, Electronic, Optical and Magnetic Materials, single layer (SL), Single layer, Voltage
Abstract: In this article, a detailed parameter extraction methodology is proposed for low-frequency noise (LFN) in single-layer (SL) graphene transistors (GFETs) based on a recently established compact LFN model. The drain current and LFN of two short channel back-gated GFETs ( ${L} = {300}$ and 100 nm) were measured at lower and higher drain voltages, for a wide range of gate voltages covering the region away from charge neutrality point (CNP) up to CNP at p-type operation region. Current–voltage ( IV ) and LFN data were also available from a long-channel SL top solution-gated (SG) GFET ( ${L} = {5}\,\,\mu \text{m}$ ), for both p- and n-type regions near and away CNP. At each of these regimes, the appropriate IV and LFN parameters can be accurately extracted. Regarding LFN, mobility fluctuation effect is dominant at CNP, and from there, the Hooge parameter $\alpha _{H}$ can be extracted, whereas the carrier number fluctuation contribution which is responsible for the well-known M-shape bias dependence of output noise divided by squared drain current, also observed in our data, makes possible the extraction of the ${N}_{T}$ parameter related to the number of traps. In the less possible case of a $\Lambda $ -shape trend, ${N}_{T}$ and $\alpha _{H}$ can be extracted simultaneously from the region near CNP. Away from CNP, contact resistance can have a significant contribution to LFN, and from there, the relevant parameter ${S}_{\Delta {R}}^{{2}}$ is defined. The LFN parameters described above can be estimated from the low drain voltage region of operation where the effect of velocity saturation (VS) mechanism is negligible. VS effect results in the reduction of LFN at higher drain voltages, and from there, the IV parameter $h\Omega $ which represents the phonon energy and is related to VS effect can be derived both from drain current and LFN data.
Published: 2020
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12. Single-pole-double-throw RF switches based on monolayer MoS2

Author: Deji Akinwande, Emiliano Pallecchi, Henri Happy, Myungsoo Kim, The University of Texas at Austin, University of Lille, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Carbon - IEMN (CARBON-IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Office of Naval Research, ONR: N00014-20-1-2104, Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Carbon - IEMN (CARBON - IEMN), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)
Subjects: Power dissipation, Materials science, business.industry, Resistance, Nonvolatile memory, Insertion loss, Capacitance, Dissipation, Cutoff frequency, Non-volatile memory, [SPI]Engineering Sciences [physics], Monolayer, Radio frequency, Optoelectronics, business
Abstract: International audience; Recently, low-power analog switches have been enjoying rapidly growing interest owing to their proliferation in mobile and reconfigurable communication and connectivity systems often with multiple-input-multiple-output architecture [1] , [2] . To develop this ideal switch, non-volatile switches based on memory devices have been investigated with the potential of zero static power dissipation [3] - [6] . In order to attain a high figure-of-merit cutoff frequency (FCO=1/2πRON COFF), RF switches with low ON-state resistance to minimize insertion loss, and low OFF-state capacitance for maximum isolation are desirable.
Published: 2021
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13. Author Correction: Optoelectronic mixing with high-frequency graphene transistors

Author: U. Sassi, Pierre Legagneux, Domenico De Fazio, Henri Happy, P. Aversa, Andrea C. Ferrari, Alberto Montanaro, Wei Wei, Giancarlo Soavi, and Emiliano Pallecchi
Subjects: Hardware_MEMORYSTRUCTURES, Multidisciplinary, Materials science, business.industry, Graphene, Science, Transistor, Bandwidth (signal processing), General Physics and Astronomy, General Chemistry, Graphene field effect transistors, General Biochemistry, Genetics and Molecular Biology, law.invention, Wavelength, Optics and photonics, Optical properties and devices, Hardware_GENERAL, law, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, business, Absorption (electromagnetic radiation), Author Correction, Mixing (physics)
Abstract: Graphene is ideally suited for optoelectronics. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We show how high speed optoelectronic mixing can be achieved with high frequency (~20 GHz bandwidth) graphene field effect transistors (GFETs). These devices mix an electrical signal injected into the GFET gate and a modulated optical signal onto a single layer graphene (SLG) channel. The photodetection mechanism and the resulting photocurrent sign depend on the SLG Fermi level (E
Published: 2021

14. Low impedance and highly transparent microelectrode arrays (MEA) for in vitro neuron electrical activity probing

Author: Morvane Colin, Vincent Thomy, Sophie Halliez, Emiliano Pallecchi, Luc Buée, Sébastien Pecqueur, Anna Susloparova, Séverine Bégard, Fabien Alibart, Steve Arscott, Yannick Coffinier, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Nano and Microsystems - IEMN (NAM6 - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Renatech Network, ANR-11-LABX-0009,DISTALZ,Développement de stratégies innovantes pour une approche transdisciplinaire de la maladie d'Alzheime(2011), European Project: 773083,ERC-CoG-2017,BIND(2018), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Lille Neurosciences & Cognition - U 1172 (LilNCog), Institut National de la Santé et de la Recherche Médicale (INSERM)-Université de Lille-Centre Hospitalier Régional Universitaire [Lille] (CHRU Lille), Nanostructures, nanoComponents & Molecules - IEMN (NCM - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Bio-Micro-Electro-Mechanical Systems - IEMN (BIOMEMS - IEMN), Carbon - IEMN (CARBON - IEMN), NanoBioInterfaces - IEMN (NBI - IEMN), We acknowledge the Labex DistalZ project (Development of Innovative Strategies for a Transdisciplinary approach to ALZheimer’s disease), the EU: ERC-2017-COG project IONOS (# GA 773228), the University of Lille, CNRS and PEpS project for financial support. This work was also partly supported by the French RENATECH network (French national nanofabrication platform)., CMNF, and European Project: 773228,H2020,ERC-2017-COG,IONOS(2018)
Subjects: neuronal network activity, Materials science, Biocompatibility, [SDV]Life Sciences [q-bio], 02 engineering and technology, 010402 general chemistry, 01 natural sciences, [SPI]Engineering Sciences [physics], PEDOT:PSS, Materials Chemistry, Transmittance, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Instrumentation, Electrical impedance, microelectrode array, Metals and Alloys, Multielectrode array, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Microelectrode, stomatognathic diseases, transparent electrodes, Electrode, low impedance, 0210 nano-technology, Biomedical engineering, Microfabrication
Abstract: International audience; In this study, we present the microfabrication and characterization of a transparent microelectrode array (MEA) system based on PEDOT:PSS for electrophysiology. The influence of the PEDOT:PSS electrode dimensions on the impedance was investigated and the stability over time under physiological environment was demonstrated. A very good transparency value was obtained by our system displaying one of the best impedance and transmittance values when compared to other transparent MEA. After biocompatibility validation, we successfully recorded spontaneous neuronal activity of primary cortical neurons cultured over 4 weeks on the transparent PEDOT:PSS electrodes. This work shows that microelectrodes composed of PEDOT:PSS are very promising as a new tool for both electrophysiology and fluorescence microscopy studies on neuronal cell cultures.
Published: 2021
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15. Bias-dependent intrinsic rf thermal noise modeling and characterization of single-layer graphene fets

Author: Nikolaos Mavredakis, David Jiménez, Wei Wei, Paulius Sakalas, Anibal Pacheco-Sanchez, Henri Happy, Emiliano Pallecchi, Universitat Autònoma de Barcelona (UAB), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Carbon - IEMN (CARBON - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), This work was funded by the European Union’s Horizon 2020 research and innovation program under Grant Agreement No. GrapheneCore2 785219 and No. GrapheneCore3 881603. We also acknowledge financial support by Spanish government under the projects RTI2018-097876-B-C21 (MCIU/AEI/FEDER, UE) and project 001-P-001702- GraphCat: Comunitat Emergent de Grafè a Catalunya, co-funded by FEDER within the framework of Programa Operatiu FEDER de Catalunya 2014-2020. This work was partly supported by the French RENATECH network., Renatech Network, European Project: 785219,H2020,GrapheneCore2(2018), and European Project: 881603,H2020,H2020-SGA-FET-GRAPHENE-2019, GrapheneCore3(2020)
Subjects: Thermal noise, Bias dependence, Semiconductor device modeling, FOS: Physical sciences, 02 engineering and technology, Intrinsic channel, Noise (electronics), law.invention, law, MOSFET, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Compact model, 0202 electrical engineering, electronic engineering, information engineering, Figure of merit, Electrical and Electronic Engineering, Excess noise factor, Velocity saturation (vs), Electronic circuit, Physics, Radiation, Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, Graphene, Velocity saturation, Transistor, 020206 networking & telecommunications, Condensed Matter Physics, [SPI.TRON]Engineering Sciences [physics]/Electronics, Graphene transistor (gfet), Optoelectronics, business
Abstract: International audience; In this article, the bias dependence of intrinsic channel thermal noise of single-layer (SL) graphene field-effect transistors (GFETs) is thoroughly investigated by experimental observations and compact modeling. The findings indicate an increase of the specific noise as drain current increases, whereas a saturation trend is observed at very high carrier density regime. Besides, short-channel effects, such as velocity saturation (VS) also result in an increment of noise at higher electric fields. The main goal of this work is to propose a physics-based compact model that accounts for and accurately predicts the above experimental observations in short-channel GFETs. In contrast to long-channel MOSFET-based models adopted previously to describe thermal noise in graphene devices without considering the degenerate nature of graphene, in this work, a model for short-channel GFETs embracing the 2-D material's underlying physics and including a bias dependence is presented. The implemented model is validated with deembedded high-frequency data from two short-channel devices at quasi-static (QS) region of operation. The model precisely describes the experimental data for a wide range of low-to-high drain current values without the need of any fitting parameter. Moreover, the consideration of the degenerate nature of graphene reveals a significant decrease of noise in comparison with the nondegenerate case and the model accurately captures this behavior. This work can also be of utmost significance from the circuit designers' aspect since noise excess factor, a very important figure of merit for RF circuits implementation, is defined and characterized for the first time in graphene transistors. © 1963-2012 IEEE.
Published: 2021
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16. Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems

Author: Deji Akinwande, Jack C. Lee, Guillaume Ducournau, Xiaohan Wu, Henri Happy, Ruijing Ge, Emiliano Pallecchi, Myungsoo Kim, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon-IEMN (CARBON-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Photonique THz - IEMN (PHOTONIQ THz - IEMN), The characterization part of this work was partly supported by the European Union’s Horizon 2020 research and innovation programme under the phase of the Graphene Flagship GrapheneCore2 785219, by an ANR TERASONIC grant (17-CE24) and by the CPER Photonics for Society, the Hauts-de-France regional council and the TERIL-WAVES project (I-Site ULNE and MEL)., This work was supported in part by the Office of Naval Research grant N00014-20-1-2104, the National Science Foundation (NSF) grant no. 1809017 and Engineering Research Center Cooperative Agreement no. EEC-1160494. D.A. acknowledges the Presidential Early Career Award for Scientists and Engineers (PECASE) through the Army Research Office Award no. W911NF-16-1-0277. The fabrication was partly done at the Texas Nanofabrication Facility supported by NSF grant NNCI-1542159., PCMP CHOP, Renatech Network, ANR-17-CE24-0044,TERASONIC,Transmissions TERAhertz combinant électronique état SOlide et photoNIQue(2017), European Project: 785219,H2020,GrapheneCore2(2018), Carbon - IEMN (CARBON - IEMN), and Photonique THz - IEMN (PHOTONIQUE THz - IEMN)
Subjects: Materials science, Band gap, Terahertz radiation, 02 engineering and technology, Dielectric, 010402 general chemistry, 01 natural sciences, law.invention, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], law, Insertion loss, Figure of merit, Electrical and Electronic Engineering, Instrumentation, business.industry, Transistor, Heterojunction, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, chemistry, Boron nitride, Optoelectronics, 0210 nano-technology, business
Abstract: Hexagonal boron nitride (hBN) has a large bandgap, high phonon energies and an atomically smooth surface absent of dangling bonds. As a result, it has been widely used as a dielectric to investigate electron physics in two-dimensional heterostructures and as a dielectric in the fabrication of two-dimensional transistors and optoelectronic devices. Here we show that hBN can be used to create analogue switches for applications in communication systems across radio, 5G and terahertz frequencies. Our approach relies on the non-volatile resistive switching capabilities of atomically thin hBN. The switches are composed of monolayer hBN sandwiched between two gold electrodes and exhibit a cutoff-frequency figure of merit of around 129 THz with a low insertion loss (≤0.5 dB) and high isolation (≥10 dB) from 0.1 to 200 GHz, as well as a high power handling (around 20 dBm) and nanosecond switching speeds, metrics that are superior to those of existing solid-state switches. Furthermore, the switches are 50 times more efficient than other non-volatile switches in terms of a d.c. energy-consumption metric, which is an important consideration for ubiquitous mobile systems. We also illustrate the potential of the hBN switches in a communication system with an 8.5 Gbit s–1 data transmission rate at 100 GHz with a low bit error rate under 10−10. Resistive switching in atomically thin sheets of hexagonal boron nitride can be used to create analogue switches for applications in communication systems across radio, 5G and terahertz frequencies.
Published: 2020
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17. A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology

Author: Emiliano Pallecchi, Thomas Zimmer, Max C. Lemme, Vikram Passi, Di Zhou, Soukaina Ben Salk, Henri Happy, Dalal Fadil, Sebastien Fregonese, Wei Wei, Wlodek Strupinski, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), School of Computer and Electronic Information [Guangxi University], Guangxi University [Nanning], Warsaw University of Technology [Warsaw], Rheinisch-Westfälische Technische Hochschule Aachen University (RWTH), Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Carbon - IEMN (CARBON - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), EU Horizon2020 research and innovation programe (Graphene Flagship – Graphene Core2 785219) for financial supports. This work was partially supported by the French RENATECH network, Renatech Network, European Project: 785219,H2020,GrapheneCore2(2018), Rheinisch-Westfälische Technische Hochschule Aachen (RWTH), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), and Carbon-IEMN (CARBON-IEMN)
Subjects: Materials science, microwave, mmic, 02 engineering and technology, Integrated circuit, 01 natural sciences, lcsh:Technology, law.invention, lcsh:Chemistry, chemistry.chemical_compound, law, Balun, 0103 physical sciences, Silicon carbide, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Instrumentation, lcsh:QH301-705.5, Monolithic microwave integrated circuit, 010302 applied physics, Fluid Flow and Transfer Processes, Graphene, business.industry, lcsh:T, Process Chemistry and Technology, 2d materials, Transistor, graphene, General Engineering, 021001 nanoscience & nanotechnology, active balun, lcsh:QC1-999, Computer Science Applications, chemistry, lcsh:Biology (General), lcsh:QD1-999, lcsh:TA1-2040, Optoelectronics, 0210 nano-technology, Bilayer graphene, business, lcsh:Engineering (General). Civil engineering (General), ddc:600, integrated circuits, Microwave, lcsh:Physics
Abstract: Applied Sciences 10(6), 2183 (2020). doi:10.3390/app10062183, Published by MDPI, Basel
Published: 2020
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18. The effect of thermal treatment on the neuronal cell biocompatibility of SU-8

Author: Tiffany Baëtens, Steve Arscott, Emiliano Pallecchi, Vincent Thomy, Séverine Bégard, Sophie Halliez, Centre de Recherche Jean-Pierre AUBERT Neurosciences et Cancer (JPArc - U837 Inserm), Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre Hospitalier Régional Universitaire [Lille] (CHRU Lille)-Université Lille 2 - Faculté de Médecine, Laboratoire Pierre Aigrain (LPA), Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Centre National de la Recherche Scientifique (CNRS)-Université de Lille-Université Polytechnique Hauts-de-France (UPHF)-Ecole Centrale de Lille-Université Polytechnique Hauts-de-France (UPHF)-Institut supérieur de l'électronique et du numérique (ISEN), Unité de recherche Virologie et Immunologie Moléculaires (VIM), Institut National de la Recherche Agronomique (INRA), Lille Neurosciences & Cognition - U 1172 (LilNCog), Institut National de la Santé et de la Recherche Médicale (INSERM)-Université de Lille-Centre Hospitalier Régional Universitaire [Lille] (CHRU Lille), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon - IEMN (CARBON - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nano and Microsystems - IEMN (NAM6 - IEMN), Bio-Micro-Electro-Mechanical Systems - IEMN (BIOMEMS - IEMN), The work was partly supported by the French RENATECH network, the LabEx DISTALZ and the Joint Inserm-University Chairs program., Renatech Network, ANR-11-LABX-0009,DISTALZ,Développement de stratégies innovantes pour une approche transdisciplinaire de la maladie d'Alzheime(2011), Lille Neurosciences & Cognition - U 1172 (LilNCog (ex-JPARC)), and Carbon-IEMN (CARBON-IEMN)
Subjects: Materials science, Biocompatibility, [SDV]Life Sciences [q-bio], Nanotechnology, 02 engineering and technology, [SDV.BC]Life Sciences [q-bio]/Cellular Biology, Photoresist, engineering.material, 010402 general chemistry, 01 natural sciences, law.invention, [SPI]Engineering Sciences [physics], Coating, law, Microsystem, Materials Chemistry, General Materials Science, Cell adhesion, Lithography, ComputingMilieux_MISCELLANEOUS, Petri dish, Adhesion, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Mechanics of Materials, engineering, 0210 nano-technology
Abstract: International audience; Future in vitro life science studies that require in situ functionalities—going beyond the common glass petri dish—can potentially be realized by using microsystems technologies to fabricate bio-microelectromechanical systems (BioMEMS) and laboratory-on-a-chip (LOC). One such material used to construct these microsystems is the commercial photoresist SU-8. Here, the neuronal biocompatibility of SU-8 is examined as a function of its hard-baking thermal treatment. The SU-8 surfaces were non-patterned large uniform thin films—this allowed the biocompatibility and cell adhesion of the SU-8 to be fully tested. In total, 75 SU-8 samples were fabricated for the study using spin-coating and lithography techniques. We observe that a single hard-baking step of 180 °C for 2 h coupled with a coating (poly-d-lysine + laminin) is enough to detoxify SU-8 and promote primary cortical cell adhesion and survival up to 28 days in vitro (DIV). Therefore, the protocol described here makes SU-8 surfaces compatible with the development of neuronal networks from primary neural cells.
Published: 2020
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19. Graphene for Radio Frequency Electronics

Author: Sebastien Fregonese, Emiliano Pallecchi, Henri Happy, Wlodek Strupinski, Wei Wei, and Fadil Dalal
Subjects: Materials science, Fabrication, Graphene, business.industry, Transistor, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, 0104 chemical sciences, law.invention, chemistry.chemical_compound, chemistry, law, Logic gate, Hardware_INTEGRATEDCIRCUITS, Silicon carbide, Optoelectronics, Electronics, Radio frequency, 0210 nano-technology, business, Electronic circuit
Abstract: In the framework of the European project Flagship Graphene, we have developed several process technologies, for fabricating graphene field-effect transistors, for radio frequency (RF) applications. Depending on the technique used to synthesize graphene, different transistors topologies were designed, given rise to different applications. Graphene materials under consideration include graphene growth on silicon carbide, graphene growth by chemical vapor deposition (CVD) on copper foil. After fabrication of transistors on rigid and on flexible substrates, high frequency characterization of devices is made. Based on the performance of transistors, RF circuits where designed and fabricated.
Published: 2020
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20. Experimental observation and modeling of the impact of traps on static and analog/HF performance of graphene transistors

Author: Anibal Pacheco-Sanchez, Nikolaos Mavredakis, Henri Happy, David Jiménez, Wei Wei, Emiliano Pallecchi, P. C. Feijoo, Universitat Autònoma de Barcelona (UAB), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon - IEMN (CARBON - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), European UnionEuropean Commission [GrapheneCore2 785219, GrapheneCore3 881603], Ministerio de Ciencia, Innovacion y Universidades [RTI2018-097876-B-C21], European Regional Development Funds (ERDF) through the Programa Operatiu FEDER de Catalunya 2014-2020, Secretaria d'Universitats i Recerca of the Departament d'Empresa i Coneixement of the Generalitat de CatalunyaGeneralitat de Catalunya, GraphCAT [001-P-001702], Renatech Network, European Project: 785219,H2020,GrapheneCore2(2018), Universidad Autónoma de Barcelona, and Carbon-IEMN (CARBON-IEMN)
Subjects: Materials science, FOS: Physical sciences, Applied Physics (physics.app-ph), graphene field-effect transistor (GFET), Transistors, 01 natural sciences, Analytical model, law.invention, [SPI]Engineering Sciences [physics], law, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, high-frequency (HF) performance, Figure of merit, Electrical and Electronic Engineering, Polarity (mutual inductance), Pulse measurements, Condensed Matter::Quantum Gases, 010302 applied physics, Condensed Matter - Mesoscale and Nanoscale Physics, Graphene, business.industry, Hysteresis, Transistor, Experimental data, Logic gates, Voltage measurement, Physics - Applied Physics, Electronic, Optical and Magnetic Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics, Logic gate, Performance evaluation, Optoelectronics, opposing pulses, channel potential, traps, business, Voltage
Abstract: International audience; The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of opposing polarity. This measurement scheme is a practical and suitable approach to obtain reproducible device characteristics. Trap-affected and trap-reduced experimental data enable a discussion regarding the impact of traps on static and dynamic device performance. An analytical drain current model calibrated with the experimental data enables the study of the trap effects on the channel potential within the device. High-frequency (HF) figures of merit and the intrinsic gain of the device obtained from both experimental and synthetic data with and without hysteresis show the importance of considering the generally overlooked impact of traps for analog and HF applications.
Published: 2020
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21. Non-volatile RF and mm-wave switches based on monolayer hBN

Author: Jack C. Lee, Vanessa Avramovic, Xiaohan Wu, Ruijing Ge, Henri Happy, Deji Akinwande, Myungsoo Kim, Emiliano Pallecchi, Etienne Okada, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon-IEMN (CARBON-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Paul Scherrer Institute, Electrochemistry Laboratory, Imaging Sciences and Biomedical Engineering Division [London], Guy's and St Thomas' Hospital [London]-King‘s College London, Renatech Network, and Carbon - IEMN (CARBON - IEMN)
Subjects: Materials science, Terahertz radiation, 02 engineering and technology, Memristor, 7. Clean energy, law.invention, microwave switches, 03 medical and health sciences, [SPI]Engineering Sciences [physics], RF switch, molybdenum, law, Monolayer, 0202 electrical engineering, electronic engineering, information engineering, Insertion loss, 030304 developmental biology, Microelectromechanical systems, 0303 health sciences, business.industry, molybdenum compounds, 020206 networking & telecommunications, Nanosecond, Cutoff frequency, random-access storage, millimetre wave integrated circuits, Optoelectronics, low-power electronics, business, boron compounds
Abstract: International audience; Non-volatile radio-frequency (RF) switches based on hexagonal boron nitride (hBN) are realized for the first time with low insertion loss (≤ 0.2 dB) and high isolation (≥ 15 dB) up to 110 GHz. Crystalline hBN enables the thinnest RF switch device with a single monolayer (~0.33 nm) as the memory layer owing to its robust layered structure. It affords ~20 dBm power handling, 10 dB higher compared to MoS 2 switches due to its wider bandgap (~6 eV). Importantly, operating frequencies cover the RF, 5G, and mm-wave bands, making this a promising low-power switch for diverse communication and connectivity front-end systems. Compared to other switch technologies based on MEMS, memristor, and phase-change memory (PCM), hBN switches offer a promising combination of non-volatility, nanosecond switching, power handling, high figure-of-merit cutoff frequency (43 THz), and heater-less ambient integration. Our pioneering work suggests that atomically-thin nanomaterials can be good device candidates for 5G and beyond.
Published: 2019
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22. Gigahertz frequency graphene transistor, high yield process and good stability under strain

Author: T. Levert, Emiliano Pallecchi, S. B. Salk, Henri Happy, O. Txoperena, S. Mhedhbi, Wei Wei, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon-IEMN (CARBON-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Renatech Network, and Carbon - IEMN (CARBON - IEMN)
Subjects: Materials science, Fabrication, Yield (engineering), Strain (chemistry), business.industry, Graphene, 020208 electrical & electronic engineering, Transistor, 020206 networking & telecommunications, 02 engineering and technology, Substrate (electronics), 7. Clean energy, Stability (probability), law.invention, Kapton, [SPI]Engineering Sciences [physics], law, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business
Abstract: We report a bonding free fabrication process suitable for flexible substrate based graphene field effect transistors (GFETs). Transistors with different gate length (100 nm, 200 nm and 300 nm) and different channel width $(12 \mu \mathrm{m}, 24 \mu \mathrm{m}$ and $50 \mu \mathrm{m})$ are successfully fabricated on Kapton substrate. The transistor yield is more than 80%. Our GFETs exhibit good stability with 0.5% strain applied. Our finding ensures for next application of RF circuit based on graphene transistor.
Published: 2019
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23. Metallized SU-8 thin film patterns on stretchable PDMS

Author: Tiffany Baëtens, Vincent Thomy, Emiliano Pallecchi, Steve Arscott, Laboratoire Pierre Aigrain (LPA), Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Bio-Micro-Electro-Mechanical Systems - IEMN (BIOMEMS - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nano and Microsystems - IEMN (NAM6 - IEMN), Renatech Network, ANR-16-CE09-0029,TIPTOP_1,Fabrication de leviers de microscopie à force atomique pour des applications de spectroscopie Raman à exaltation de pointe(2016), ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), and A c k n o w l e d g m e n t s :The authors would very much like to thank Annie Fattorini and Marc Dewitte for help with the metallization, Christophe Boyaval for help with the SEM, and Flavie Braud for help in fabricating the physical masks using a Tangerine laser machining system (Amplitude Systèmes, France) purchased within the EQUIPEX ‘LEAF’ project (ANR-11-EQPX-0025). The digital microscope was purchased within the ‘TIPTOP_1’ project (ANR-16-CE09-0029). This work was partially supported by the French RENATECH network
Subjects: Materials science, planar processes, Stretchable electronics, 02 engineering and technology, Photoresist, metallization, Soft lithography, law.invention, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], Poisson effect, law, PDMS, Electrical and Electronic Engineering, Thin film, photolithography, Lithography, ComputingMilieux_MISCELLANEOUS, Polydimethylsiloxane, business.industry, Mechanical Engineering, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, SU-8, chemistry, Mechanics of Materials, Optoelectronics, Photolithography, 0210 nano-technology, business, Microfabrication
Abstract: We show how a rigid patterned SU-8 thin film in tandem with the mechanical Poisson effect can be used beneficially to enable robust metallization on stretchable polydimethylsiloxane (PDMS). Two generic planar processes used to form a thin, mechanically-robust strain-shielding photoresist on a soft substrate are developed to demonstrate these ideas. The first process is a self-aligned metallization of photolithographically patterned SU-8 features on PDMS. The second process is a fully photolithographic lift-off metallization of pre-patterned SU-8 features on PDMS. In both cases, the SU-8 has a sub-micrometre thickness (~800 nm)?supporting a thermally evaporated Ti/Au (5 nm/50 nm) thin film metallization. The resulting samples were characterized electromechanically?the results demonstrate that the electrical continuity of metal lines (width = 150 ?m and length up to 1 cm) is maintained up to ~70% strain between the lines. The electrical resistance of such lines remains relatively stable: 35 ? at zero-strain and 63 ? at 69% average interline strain. The electrical resistivity of the evaporated gold is near to that of pure gold, and remains so even at high strains (49 n? m at 10% and 70 n? m at 41%)?this proves the absence strain-induced micro-cracking of the metal lines. Although a specific evaporated metal combination is used here to demonstrate a working prototype system, in principle, any thin-film material, which can be deposited by microfabrication, e.g. insulators, semiconductors..., could be integrated into the generic processes. The basic lithographic processes expounded here are also potentially extendible to encompass the integration of other microfabrication techniques, e.g. soft lithography, contact printing..., enabling more complex flexible systems to be envisaged and realized.
Published: 2019
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24. Velocity Saturation Effect on Low Frequency Noise in Short Channel Single Layer Graphene Field Effect Transistors

Author: Jose A. Garrido, Andrea Bonaccini Calia, Ramon Garcia Cortadella, Wei Wei, D. Vignaud, Nikolaos Mavredakis, Emiliano Pallecchi, Henri Happy, David Jiménez, Departament d'Enginyeria Electrònica [Barcelona], Universitat Autònoma de Barcelona (UAB), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Carbon - IEMN (CARBON - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), Catalan Institute of Nanoscience and Nanotechnology (ICN2), Consejo Superior de Investigaciones Científicas [Madrid] (CSIC)-Barcelona Institute of Science and Technology (BIST), Institució Catalana de Recerca i Estudis Avançats (ICREA), Renatech Network, European Project: 785219,H2020,GrapheneCore2(2018), European Commission, Ministerio de Economía y Competitividad (España), Ministerio de Ciencia, Innovación y Universidades (España), Agencia Estatal de Investigación (España), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon-IEMN (CARBON-IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: Materials science, Infrasound, 02 engineering and technology, low frequency noise, graphene field effect transistor, 01 natural sciences, Noise (electronics), Analytical model, [SPI]Engineering Sciences [physics], 0103 physical sciences, Phase noise, Materials Chemistry, Electrochemistry, Low frequency noise, 010302 applied physics, business.industry, Graphene field effect transistor, Velocity saturation, Contact resistance, graphene, analytical model, 021001 nanoscience & nanotechnology, velocity saturation, Electronic, Optical and Magnetic Materials, Optoelectronics, Field-effect transistor, Radio frequency, Graphene, 0210 nano-technology, business, Voltage
Abstract: Graphene devices for analog and radio frequency (RF) applications are prone to low frequency noise (LFN) due to its up conversion to undesired phase noise at higher frequencies. Such applications demand the use of short channel graphene transistors (GFETs) that operate at high electric fields in order to ensure a high speed. Electric field is inversely proportional to device length and proportional to channel potential, so it gets maximized as the drain voltage increases and the transistor's length shrinks. Under these conditions though, short channel effects like velocity saturation (VS) should be considered. The reduction of LFN data due to the VS effect at short channel GFETs operating at high drain potential is for the first time shown in the present work. Carrier number and mobility fluctuations have been proven to be the main sources that generate LFN in GFETs. While their contribution to the bias dependence of LFN in long channels has been thoroughly investigated, the way in which VS phenomenon affects LFN in short channel devices under high drain voltage conditions has not been well understood. In this paper we have proposed a physics-based analytical LFN model that works under both low and high electric field conditions. The implemented model is validated with experimental data from CVD grown back-gated single layer GFETs operating at gigahertz frequencies. The model accurately captures the reduction of LFN especially near the charge neutrality point because of the effect of the VS mechanism. Moreover, an analytical expression for the effect of contact resistance on LFN is derived. This contact resistance contribution is experimentally shown to be dominant at high gate voltages and is accurately described by the proposed model. The noise parameter related to LFN at contacts is found to have an exponential dependence with contact resistance, and to our knowledge, this is shown for the first time., This work was funded by the Ministerio de Economía y Competitividad under the project TEC2015-67462-C2-1-R and the European Union’s Horizon 2020 research and innovation program under Grant Agreement No. GrapheneCore2 785219 (Graphene Flagship), Marie Skłodowska-Curie Grant Agreement No 665919 and Grant Agreement No. 732032 (BrainCom). This work was also partly supported by the French RENATECH network. The ICN2 is supported by the Severo Ochoa Centres of Excellence programme, funded by the Spanish Research Agency (AEI, grant no. SEV-2017-0706).
Published: 2019
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25. Croissance et caractérisation de graphène au Pôle CNFM de Lille

Author: Virginie Hoel, S. Ben Salk, Emiliano Pallecchi, Henri Happy, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon-IEMN (CARBON-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut TELECOM/TELECOM Lille1, Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), and Carbon - IEMN (CARBON - IEMN)
Subjects: [SPI]Engineering Sciences [physics], 0103 physical sciences, graphene, 02 engineering and technology, 021001 nanoscience & nanotechnology, 010306 general physics, 0210 nano-technology, 01 natural sciences, [PHYS.PHYS.PHYS-ED-PH]Physics [physics]/Physics [physics]/Physics Education [physics.ed-ph]
Abstract: National audience; Le graphène en particulier, et les matériaux 2D en général, sont une nouvelle filière de matériaux aux propriétés physiques très intéressantes. Leurs propriétés électroniques, thermiques et mécaniques en font des matériaux de choix pour de nombreuses applications, dans les domaines aussi que les technologies de l’information et de la communication, la santé, l’énergie, le transport. Compte tenu des potentialités de ces matériaux, de nombreux grands programmes de recherche se sont développés au niveau international, pour étudier ces matériaux, et bénéficier des innovations qui en découleraient pour le développement de nouveaux emplois et de nouvelles richesses. Sur le plan de la formation, avec le soutien du GIP CNFM et de l’IDEFI FINMINA obtenu par le réseau du CNFM, le pôle CNFM de Lille s’est doté de nouveaux équipements qui permettent d’explorer, d’analyser, et de fabriquer des composants et systèmes avec ces matériaux 2D. Il s’agit notamment d’un four de croissance de graphène, d’un spectromètre Raman permettant de caractériser les matériaux 2D, du développement d’un système de transfert du graphène sur un matériau hôte. Cette communication va présenter la méthodologies mise en place, pour sensibiliser les étudiants du master 2 sur la manipulation de ces nouveaux matériaux.
Published: 2018
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26. Initiation aux matériaux 2D: fabrication, caractérisation, manipulation

Author: Soukaina Ben Salk, Emiliano Pallecchi, Virginie HOEL, Henri Happy, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon - IEMN (CARBON - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut TELECOM/TELECOM Lille1, Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), and Carbon-IEMN (CARBON-IEMN)
Subjects: [SPI]Engineering Sciences [physics], matériaux 2D, ComputingMilieux_MISCELLANEOUS
Abstract: National audience
Published: 2018

27. Cracking effects in squashable and stretchable thin metal films on PDMS for flexible microsystems and electronics

Author: Tiffany Baëtens, Emiliano Pallecchi, Vincent Thomy, Steve Arscott, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Bio-Micro-Electro-Mechanical Systems - IEMN (BIOMEMS - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire Pierre Aigrain (LPA), Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), Carbon - IEMN (CARBON - IEMN), Nano and Microsystems - IEMN (NAM6 - IEMN), The authors would very much like to thank Dominique Deresmes for help with the AFM measurements, Christophe Boyaval for help with the SEM observations, Annie Fattorini for help with the metallization, Flavie Braud for help with the interference microscopy purchased within the EQUIPEX LEAF project (ANR-11-EQPX-0025), and Jean-Michel Mallet for help with adaptation of the strain applicator tool. This work was partially supported by the French RENATECH network., Renatech Network, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris), and Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)
Subjects: [SPI]Engineering Sciences [physics], Nanoscience and technology, lcsh:R, Electronics and photonics and device physics, lcsh:Medicine, lcsh:Q, lcsh:Science, Article, ComputingMilieux_MISCELLANEOUS, Materials science
Abstract: International audience; Here, we study cracking of nanometre and sub-nanometre-thick metal lines (titanium, nickel, chromium, and gold) evaporated onto commercial polydimethylsiloxane (PDMS) substrates. Mechanical and electromechanical testing reveals potentially technologically useful effects by harnessing cracking. When the thin film metal lines are subjected to uniaxial longitudinal stretching, strain-induced cracks develop in the film. The regularity of the cracking is seen to depend on the applied longitudinal strain and film thickness—the findings suggest ordering and the possibility of creating metal mesas on flexible substrates without the necessity of lithography and etching. When the metal lines are aligned transversally to the direction of the applied strain, a Poisson effect-induced electrical ‘self-healing’ can be observed in the films. The Poisson effect causes process-induced cracks to short circuit, resulting in the lines being electrically conducting up to very high strains (~40%). Finally, cracking results in the observation of an enhanced transversal gauge factor which is ~50 times larger than the geometric gauge factor for continuous metal films—suggesting the possibility of high-sensitivity thin-film metal strain gauge flexible technology working up to high strains.
Published: 2018
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28. Fatigue test on flexible graphene field effect transistors with bottom gate electrode

Author: S. Bensalk, Dalal Fadil, Wei Wei, S. Mhedhbi, Emiliano Pallecchi, Henri Happy, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: Materials science, 02 engineering and technology, Channel width, Transistors, 01 natural sciences, law.invention, [SPI]Engineering Sciences [physics], Robustness (computer science), law, 0103 physical sciences, Radio frequency, Fatigue, 010302 applied physics, Substrates, Graphene, business.industry, Logic gates, 021001 nanoscience & nanotechnology, Graphene field effect transistors, Bottom gate, Electrode, Performance evaluation, Optoelectronics, Double gate, 0210 nano-technology, business
Abstract: International audience; Graphene is a promising candidate as channel material for flexible wearable radio frequency devices. In this work we fabricated double gate flexible graphene field effect transistors and characterized their DC and RF performance. Moreover, we performed a fatigue test consisting on a 1000 times dynamical bending at 1 Hz. The banding radius was 40 mm, which correspond to a strain of 0.16%. The DC and RF characterization shows the device performance variation is around 10%. The finding demonstrates the robustness of our GFETs, further work will be needed to determine the physical mechanism that cause the performance change.
Published: 2018
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29. 2D-Graphene Epitaxy on SiC for RF Application: Fabrication, Electrical Characterization and Noise Performance

Author: Henri Happy, Marina Deng, W. Strupinski, Sebastien Fregonese, Emiliano Pallecchi, Wei Wei, Dalal Fadil, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Warsaw University of Technology [Warsaw], Carbon-IEMN (CARBON-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), and Carbon - IEMN (CARBON - IEMN)
Subjects: 010302 applied physics, Materials science, Condensed matter physics, Silicon, Graphene, Transconductance, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, Noise figure, 7. Clean energy, 01 natural sciences, law.invention, symbols.namesake, chemistry, law, 0103 physical sciences, symbols, Field-effect transistor, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, Raman spectroscopy, Microwave, ComputingMilieux_MISCELLANEOUS
Abstract: Two-dimensional graphene grown by chemical vapor deposition (CVD) without the sublimation of the silicon of SiC substrate was used to fabricate field effect transistors. Atomic force microscopy and Raman spectroscopy measurements show the high quality of the graphene. The study of DC, radio frequency and microwave noise characteristics demonstrate reasonable extrinsic value of transconductance $(g_{m})$ , current gain cut-off frequency $(f_{T})$ and minimum noise figure $(NF_{min})$ related to the transistor dimension. For devices with gate length $\pmb{L_{g}=150}$ nm, the transistors show extrinsic current gain cut-off frequency $\pmb{f_{T_{-}extr}=65\mathrm{GHz}}$ associated to the maximum frequency of oscillation $\pmb{f_{max}=28\mathrm{GHz}}$ . The measurement of noise performance shows $\pmb{NF_{min}=4\mathrm{dB}}$ @ 10 GHz.
Published: 2018
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30. Record high bandwidth integrated graphene photodetectors for communication beyond 180 Gb/s

Author: Daniel Neumaier, Daniel Schall, Guillaume Ducournau, Emiliano Pallecchi, Vanessa Avramovic, and Martin Otto
Subjects: Materials science, Silicon, Physics::Instrumentation and Detectors, Optical communication, Photodetector, chemistry.chemical_element, FOS: Physical sciences, Physics::Optics, 02 engineering and technology, Applied Physics (physics.app-ph), Hardware_PERFORMANCEANDRELIABILITY, 010402 general chemistry, 7. Clean energy, 01 natural sciences, law.invention, law, Hardware_INTEGRATEDCIRCUITS, Physics::Atomic and Molecular Clusters, Wafer, Physics::Chemical Physics, business.industry, Graphene, Bandwidth (signal processing), Physics - Applied Physics, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Semiconductor, chemistry, Optoelectronics, 0210 nano-technology, business, Ultrashort pulse
Abstract: We report on the fastest silicon waveguide integrated photodetectors with a bandwidth larger than 128 GHz for ultrafast optical communication. The photodetectors are based on CVD graphene that is compatible to wafer scale production methods., 3 pages, 2 figures
Published: 2018

31. Transport mechanisms in a puckered graphene-on-lattice

Author: François Vaurette, D. Vignaud, Jean-Francois Lampin, Maxime Berthe, O. Lancry, Tao Xu, Bin Wei, Jimmy Xu, S. Eliet, Damien Eschimese, Bruno Grandidier, Wei Wei, Elisabeth Galopin, Henri Happy, Emiliano Pallecchi, A. Díaz Álvarez, D. Desremes, University of Shanghai [Shanghai], Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique - IEMN (PHYSIQUE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon - IEMN (CARBON - IEMN), Laboratoire Avancé de Spectroscopie pour les Intéractions la Réactivité et l'Environnement - UMR 8516 (LASIRE), Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Northwestern Polytechnical University [Xi'an] (NPU), Transduction, Propagation et Imagerie Acoustique - IEMN (TPIA - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 (IEMN-DOAE), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Photonique THz - IEMN (PHOTONIQUE THz - IEMN), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), AcknowledgementsWe thank C. Delerue, D. Stiévenard and L. Wirtz for fruitful discussions. This study was financially supported by the European Community's Seventh Framework Program (Grant No. PITN-GA-2012-316751, 'Nanoembrace' Project), the EQUIPEX program Excelsior (Grant No. ANR-11-EQPX-0015), and the RENATECH network. T. Xu acknowledges the supports of the National Natural Science Foundation of China (Grant No. 61775130) and of the Region Nord-Pas-de-Calais (Grant No. 2013_11806). J. Xu acknowledges the financial support of the University of Lille., Renatech Network, ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011), European Project: 316751,EC:FP7:PEOPLE,FP7-PEOPLE-2012-ITN,NANOEMBRACE(2013), Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Centrale Lille Institut (CLIL), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Photonique THz - IEMN (PHOTONIQ THz - IEMN), Carbon-IEMN (CARBON-IEMN), and Physique-IEMN (PHYSIQUE-IEMN)
Subjects: [PHYS]Physics [physics], Materials science, Graphene, business.industry, Compliant substrate, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, Graphene monolayer, [SPI]Engineering Sciences [physics], Electrical transport, Electrical resistivity and conductivity, law, Lattice (order), 0103 physical sciences, Optoelectronics, [CHIM]Chemical Sciences, General Materials Science, [NLIN]Nonlinear Sciences [physics], 010306 general physics, 0210 nano-technology, business, Nanoscopic scale, Nanopillar
Abstract: International audience; Understanding the fundamental properties of graphene when its topography is patterned by the use of a compliant substrate is essential to improve the performances of graphene sensors. Here we suspend a graphene monolayer on SiO2 nanopillar arrays to form a puckered graphene-on-lattice and investigate the strain and electrical transport at the nanoscale. Despite a nonuniform strain in the graphene-on-lattice, the resistivity is governed by thermally activated transport and not the strain. We show that the high thermal activation energy results from a low charge carrier density and a periodic change of the chemical potential induced by the interaction of the graphene monolayer with the nanopillars, making the use of graphene-on-lattice attractive to further increase the electrical response of graphene sensors.
Published: 2018
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32. Electrical devices from top-down structured platinum diselenide films

Author: Max C. Lemme, Georg S. Duesberg, Chanyoung Yim, Vikram Passi, Niall McEvoy, Emiliano Pallecchi, Dalal Fadil, Cormac Ó Coileáin, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon-IEMN (CARBON-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Carbon - IEMN (CARBON - IEMN)
Subjects: Materials science, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, lcsh:Chemistry, [SPI]Engineering Sciences [physics], Electrical resistivity and conductivity, lcsh:TA401-492, General Materials Science, Electronics, Sheet resistance, business.industry, Mechanical Engineering, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Semimetal, Electrical contacts, 0104 chemical sciences, Semiconductor, lcsh:QD1-999, Mechanics of Materials, Optoelectronics, lcsh:Materials of engineering and construction. Mechanics of materials, 0210 nano-technology, Contact area, business, Electron-beam lithography
Abstract: npj 2D materials and applications 2(1), 5 (2018). doi:10.1038/s41699-018-0051-9, Published by Nature Publishing Group, London
Published: 2018
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33. Graphene FETs With Aluminum Bottom-Gate Electrodes and Its Natural Oxide as Dielectrics

Author: Haechon Kim, Mohamed Belhaj, Wei Wei, Geetanjali Deokar, Emiliano Pallecchi, Elisabeth Galopin, Xin Zhou, Henri Happy, D. Vignaud, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: Fabrication, Materials science, [SDV]Life Sciences [q-bio], Nanotechnology, 02 engineering and technology, Dielectric, 7. Clean energy, 01 natural sciences, Capacitance, law.invention, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, [CHIM]Chemical Sciences, [NLIN]Nonlinear Sciences [physics], Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, [PHYS]Physics [physics], 010302 applied physics, business.industry, Graphene, Transistor, 021001 nanoscience & nanotechnology, Cutoff frequency, Flexible electronics, Electronic, Optical and Magnetic Materials, [SDU]Sciences of the Universe [physics], [SDE]Environmental Sciences, Optoelectronics, 0210 nano-technology, business, Graphene nanoribbons
Abstract: In this paper, we present a fabrication process of graphene field effect transistors (GFETs) using natural oxidation of aluminum as dielectrics, which provide an alternative fabrication choice for future flexible electronics with the large scale and arbitrary substrates. The high-quality monolayer graphene is preserved by our process, and the mobility up to 3250 cm2/Vs is measured after whole device fabrication. GFETs with double bottom-gate structure varying from 300 to 100 nm in gate length have been characterized by both static and dynamic measurements. The total gate capacitances of our device structure are evaluated based on the measurement results of scattering parameters. We report an intrinsic current gain cutoff frequency $(f_{t{\hbox{-}}\text {int}})$ of 11 GHz and a maximum oscillation frequency $(f_{\max })$ of 8 GHz in devices with 100 nm gate length. Moreover, both the values of $f_{t{\hbox{-}}\text {int}}$ and $f_{\max }$ for different gate lengths are also discussed. Our results indicate that the full process exhibits great potential, especially for graphene-based flexible electronics.
Published: 2015
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34. Graphene FETs Based on High Resolution Nanoribbons for HF Low Power Applications

Author: David Mele, Wei Wei, Emiliano Pallecchi, Henri Happy, Abdelkarim Ouerghi, Dalal Fadil, Sarah Mehdhbi, Sylvie Lepilliet, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Carbon-IEMN (CARBON-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Carbon - IEMN (CARBON - IEMN)
Subjects: Materials science, Band gap, Graphene, business.industry, Transistor, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, law.invention, [SPI]Engineering Sciences [physics], law, Optoelectronics, Field-effect transistor, Dry etching, 0210 nano-technology, business, Saturation (magnetic), Lithography, Graphene nanoribbons
Abstract: International audience; In this paper we present high frequency field effect transistors based on graphene nanoribbons arrays (GNRFETs). The nanoribbons serve as a channel for the transistors and are fabricated with a process based on e-beam lithography and dry etching of high mobility hydrogen intercalated epitaxial graphene. The widths of the nanoribbons vary from 50 to 20 nm, less than half those measured in previous reports for GNRFETs. Hall measurements reveal that the devices are p-doped, with mobility on the order of 2300 cm(2)/Vs. From DC characteristics, we find that the maximum ratio I-MAX/I-MIN is 5 obtained at 50 nm ribbons width. The IV characteristics of the GNRFETs are slightly non-linear at high bias without a full saturation. Therefore, despite the aggressive scaling of the graphene nanoribbon width, a bandgap is still not observed in our measurements. The high frequency performances of our GNRFETs are already significant at low bias. At 300 mV drain source voltage, the highest intrinsic (extrinsic) cut-off frequency f(t) reaches 82 (18) GHz and the extrinsic maximum oscillation frequency f(max) is 20 GHz, which is promising for low power applications.
Published: 2018
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35. Fabrication of new transparent MEAs made from pure PEDOT:PSS and their optical/electrical properties for neurons' activity assessment in the frame of Alzheimer disease case study

Author: Vincent Thomy, Sophie Halliez, Luc Buée, Séverine Bégard, Emiliano Pallecchi, Fabien Alibart, Yannick Coffinier, Morvane Colin, Steve Arscott, Anna Susloparova, Institut de Recherche Interdisciplinaire [Villeneuve d'Ascq] (IRI), Centre National de la Recherche Scientifique (CNRS)-Université de Lille, Droit et Santé-Université de Lille, Sciences et Technologies, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nanostructures, nanoComponents & Molecules - IEMN (NCM-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Bio-Micro-Electro-Mechanical Systems - IEMN (BIOMEMS - IEMN), Nano and Microsystems - IEMN (NAM6 - IEMN), Université de Lille, Centre de Recherche Jean-Pierre AUBERT Neurosciences et Cancer - U1172 Inserm - U837 (JPArc), Institut National de la Santé et de la Recherche Médicale (INSERM)-Université Lille Nord de France (COMUE)-Université de Lille, Unité de recherche Virologie et Immunologie Moléculaires (VIM (UR 0892)), Institut National de la Recherche Agronomique (INRA), Université de Lille, Sciences et Technologies-Université de Lille, Droit et Santé-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Centre National de la Recherche Scientifique (CNRS)-Université de Lille-Université Polytechnique Hauts-de-France (UPHF)-Ecole Centrale de Lille-Université Polytechnique Hauts-de-France (UPHF)-Institut supérieur de l'électronique et du numérique (ISEN), Laboratoire Pierre Aigrain (LPA), Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), Centre de Recherche Jean-Pierre AUBERT Neurosciences et Cancer (JPArc - U837 Inserm), Institut National de la Santé et de la Recherche Médicale (INSERM)-Université Lille 2 - Faculté de Médecine -Centre Hospitalier Régional Universitaire [Lille] (CHRU Lille), Unité de recherche Virologie et Immunologie Moléculaires (VIM), NanoBioInterfaces - IEMN (NBI - IEMN), Nanostructures, nanoComponents & Molecules - IEMN (NCM - IEMN), Centre de Recherche Jean-Pierre AUBERT Neurosciences et Cancer - U837 (JPArc), Université Lille Nord de France (COMUE)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Université de Lille, AcknowledgementsWe acknowledge the Labex DistalZ project (Development of Innovative Strategies for a Transdisciplinary approach to ALZheimer’s disease), the University of Lille and CNRS for financial support. This work was also partly supported by the French RENATECH network (French national nanofabrication platform)., and RENATECH network
Subjects: 0303 health sciences, Fabrication, Materials science, business.industry, Frame (networking), Activity assessment, 03 medical and health sciences, Cellular and Molecular Neuroscience, [SPI]Engineering Sciences [physics], 0302 clinical medicine, PEDOT:PSS, Optoelectronics, business, 030217 neurology & neurosurgery, ComputingMilieux_MISCELLANEOUS, 030304 developmental biology
Abstract: International audience; Abstract :In this study, the fabrication of the microelectrode array (MEA) devices with electrodes made of pure PEDOT:PSS is presented. Their electrical characteristics were assessed prior further biological application. The influence of the electrode size as well as the thickness of the PEDOT:PSS electrodes on the impedance was demonstrated. Long-time experiments confirmed stability of the MEA devices. This work shows that microelectrodes from pure PEDOT:PSS are very promising as an alternative to metal based MEAs.
Published: 2018
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36. A thermal diode and novel implementation in a phase-change material

Author: Jimmy Xu, Z. Chen, Y. Wan, Emiliano Pallecchi, J. H. Kim, and Gustavo E. Fernandes
Subjects: Materials science, business.industry, Process Chemistry and Technology, Nanotechnology, Phase-change material, Rectification, Mechanics of Materials, Phase (matter), Thermal, Optoelectronics, General Materials Science, Electrical and Electronic Engineering, Thermal diode, business, Heat management
Abstract: The development of devices suitable for heat management requires materials whose thermal properties and synthesis are well controlled. Phase-changing materials are both highly tunable and well characterized, and therefore promising as building blocks for thermal devices. Here we introduce a novel design of a thermal diode based on a phase changing material, and we validate it by realizing a proof-of-concept device consisting of a series of PNIPAM (the phase changing material) and PDMS. Thermal measurements of our thermal diode demonstrate heat rectification, with a rectification coefficient on the order of two. A simple model is used to describe the experimental results.
Published: 2015
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37. Graphene field effect transistors with optimized contact resistance for current gain

Author: Wei Wei, Domenico De Fazio, Henri Happy, Andrea C. Ferrari, U. Sassi, Emiliano Pallecchi, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Cambridge Graphene Centre (Cambridge, UK)
Subjects: Materials science, Graphene, Ambipolar diffusion, business.industry, 020208 electrical & electronic engineering, Contact resistance, Transistor, Electrical engineering, Saturation velocity, 02 engineering and technology, 021001 nanoscience & nanotechnology, 7. Clean energy, law.invention, [SPI]Engineering Sciences [physics], law, 0202 electrical engineering, electronic engineering, information engineering, Scattering parameters, Optoelectronics, Field-effect transistor, Radio frequency, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract: Graphene is a promising two dimensional channel material for radio frequency field effect transistors (RF-FET)[1]. It has ambipolar carriers with high mobility and high saturation velocity. It also has excellent mechanical robustness and flexibility. Due to these intrinsic properties, graphene based FETs can be applied to flexible, wearable components for RF applications such as high speed wireless communication. GFETs fabricated on rigid and flexible substrate have been demonstrated by several groups [2-4]. Nevertheless, the high metal-to-graphene contact resistance remains a bottleneck factor for RF performance. i.e, current gain cut-off frequency, ft. In this work, we report a process and full characterization of GFETs based on CVD graphene on Si/SiO 2 substrate. A low contact resistance (Rc) of 125 ohm·μm with high reliability was obtained by using pure Au. From the measurement of scattering parameters, we extracted the high frequency performances of our GFETs. Best intrinsic transit frequency have been observed for transistor with 180 nm channel length, with intrinsic ft of 100 GHz at low bias of 0.5V.
Published: 2017
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38. High frequency and noise performance of GFETs

Author: Wei Wei, Emiliano Pallecchi, Sebastien Fregonese, Marina Deng, Gilles Dambrine, Thomas Zimmer, Dalal Fadil, Henri Happy, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut TELECOM/TELECOM Lille1, Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Carbon-IEMN (CARBON-IEMN), Renatech Network, European Project: 785219,H2020,GrapheneCore2(2018), and Carbon - IEMN (CARBON - IEMN)
Subjects: 010302 applied physics, Materials science, business.industry, Terahertz radiation, Graphene, Amplifier, Contact resistance, Electrical engineering, Linearity, 02 engineering and technology, 021001 nanoscience & nanotechnology, Graphene field effect transistors, 01 natural sciences, Noise (electronics), Low noise, law.invention, law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract: Graphene material exhibits a number of outstanding electronic and mechanical properties that make it very attractive for micro and nanoelectronic applications. Considering graphene field effect transistors (GFETs), considerable efforts were made during the recent years, and the devices at state of the art show impressive high frequency cut-off frequencies. The interest of GFET is particularly strong for some high frequency (HF) applications such as high linearity mixer in W-band, THz detection, …. In this paper we will give an overview on the GFETs and will present the devices developed in our Lab. Based on high frequency measurements of noise characteristics of our GFETs, we will point out the impact of technological aspects (such as contact resistance, device structure) on the HF noise performances. The implications of our findings for the development of graphene-based circuit such as low noise amplifiers will be also discussed.
Published: 2017
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39. Single step fabrication of N-doped graphene/Si3N4/SiC heterostructures

Author: Abdelkarim Ouerghi, Emiliano Pallecchi, Mounib Bahri, Fausto Sirotti, Gilles Patriarche, Mathieu G. Silly, E. Velez-Fort, and Abhay Shukla
Subjects: Materials science, Photoemission spectroscopy, business.industry, Graphene, Heteroatom, Physics::Optics, Nanotechnology, Substrate (electronics), Condensed Matter Physics, Atomic and Molecular Physics, and Optics, law.invention, Condensed Matter::Materials Science, Electron diffraction, law, Physics::Atomic and Molecular Clusters, Optoelectronics, Condensed Matter::Strongly Correlated Electrons, General Materials Science, Physics::Chemical Physics, Electrical and Electronic Engineering, business, Bilayer graphene, Graphene nanoribbons, Graphene oxide paper
Abstract: In-plane heteroatom substitution of graphene is a promising strategy to modify its properties. The ability to dope graphene with electron-donor nitrogen heteroatoms is highly important for modulating electrical properties of graphene. Here we demonstrate a transfer-free method to directly grow large area quasi free-standing N-doped graphene bilayers on an insulating substrate (Si3N4). Electron-bombardment heating under nitrogen flux results in simultaneous growth of N-doped graphene and a Si3N4 layer on the SiC surface. The decoupling of N-doped graphene from the substrate and the presence of Si3N4 are identified by X-ray photoemission spectroscopy and low-energy electron diffraction. The substitution of nitrogen atoms in the graphene planes was confirmed using high resolution X-ray photoemission spectroscopy which reveals several atomic configurations for the nitrogen atoms: Graphitic-like, pyridine-like, and pyrroliclike. Furthermore, we demonstrated for the first time that N-doped graphene could be used to efficiently probe oxygen molecules via nitrogen atom defects. Open image in new window
Published: 2014
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40. Small-Signal Model for 2D-Material Based FETs Targeting Radio-Frequency Applications: The Importance of Considering Nonreciprocal Capacitances

Author: Henri Happy, David Jiménez, Francisco Pasadas, Wei Wei, Emiliano Pallecchi, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon-IEMN (CARBON-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Instituto Ramon y Cajal de Investigacion Sanitaria [Madrid, Spain] (IRYCIS), Universidad de Alcalá - University of Alcalá (UAH), European UnionEuropean Commission [604391], European Union's through the Horizon 2020 Research and Innovation Program [696656], and Ministerio de Economia y CompetitividadSpanish Government [TEC2012-31330, TEC2015-67462-C2-1-R]
Subjects: Engineering, Transconductance, fet, Context (language use), Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, Hybrid-pi model, 01 natural sciences, charge conservation, [SPI]Engineering Sciences [physics], 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Figure of merit, Electrical and Electronic Engineering, 010302 applied physics, business.industry, 2d materials, s-parameters, small-signal, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, Small-signal model, Equivalent circuit, Field-effect transistor, Radio frequency, radio-frequency (rf) figures of merit (foms), monolithic microwave integrated circuit (mmic), 0210 nano-technology, business
Abstract: International audience; A small-signal equivalent circuit of 2D-material based FETs is presented. Charge conservation and nonreciprocal capacitances have been assumed, so the model can be used to make reliable predictions at both device and circuit levels. In this context, explicit and exact analytical expressions of the main radio-frequency figures of merit of these devices are given. Moreover, a direct parameter extraction methodology is provided based on S-parameter measurements. In addition to the intrinsic capacitances, transconductance and output conductance, our approach allows extracting the series combination of drain-source metal contact and access resistances. Accounting for these extrinsic resistances is of upmost importance when dealing with low dimensional FETs.
Published: 2017
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41. 2.5GHz integrated graphene RF power amplifier on SiC substrate

Author: T. Hanna, Emiliano Pallecchi, Sebastien Fregonese, M.S. Khenissa, Nathalie Deltimple, Henri Happy, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), ANR-12-NANO-0004,GRACY,Electronique graphene pour amplificateur faible bruit(2012), and Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS)
Subjects: Power gain, Power-added efficiency, Materials science, Circuit design, 02 engineering and technology, 01 natural sciences, law.invention, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, Materials Chemistry, Figure of merit, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, Graphene, Amplifier, RF power amplifier, Electrical engineering, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Power (physics), [SPI.TRON]Engineering Sciences [physics]/Electronics, Optoelectronics, 0210 nano-technology, business
Abstract: In this work, we report the design of 2.5 GHz integrated power amplifier based on a graphene FET fabricated with thermal deposition on SiC. In this first large signal study of graphene radiofrequency power amplifiers, a power gain of 8.9 dB is achieved, the maximum reported output power and power added efficiency are 5.1 dBm and 2.2% respectively. Furthermore, graphene and Si CMOS amplifiers are compared; conclusions are drawn towards the technology enhancements to optimize the amplifiers figures of merit.
Published: 2016
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42. Graphene field effect transistors on flexible substrate : stable process and high RF performance

Author: Z. Amaia, Alba Centeno, Wei Wei, Henri Happy, Emiliano Pallecchi, Mohamed Belhaj, D. Vignaud, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Renatech Network, and Graphenea S.A.
Subjects: Materials science, Fabrication, Yield (engineering), 02 engineering and technology, Substrate (electronics), Transistors, 01 natural sciences, 7. Clean energy, law.invention, Stable process, [SPI]Engineering Sciences [physics], law, Radio frequency, 0103 physical sciences, 010302 applied physics, Substrates, Graphene, Oscillation, business.industry, Transistor, Logic gates, 021001 nanoscience & nanotechnology, Kapton, Performance evaluation, Optoelectronics, 0210 nano-technology, business
Abstract: International audience; We report a simple and low temperature fabrication process suitable for flexible substrate based graphene field effect transistors (GFETs). Transistors with 300 nm gate length and different channel width (12 mu m and 24 mu m) were successfully fabricated on Kapton substrate. We report asmeasured current gain cut-off frequency of 27 GHz and maximum oscillation frequency of 12 GHz. The high performance transistors with high yield in this work demonstrate the great potential of our full process for flexible GFETs.
Published: 2016
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43. Contact resistance study of 'edge-contacted' metal-graphene interfaces

Author: Satender Kataria, Emiliano Pallecchi, Amit Gahoi, Jasper Ruhkopf, Henri Happy, Max C. Lemme, François Vaurette, Vikram Passi, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Renatech Network, and Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN)
Subjects: 010302 applied physics, Fabrication, Materials science, business.industry, Graphene, Contact resistance, Dirac point, Nanotechnology, 02 engineering and technology, Edge (geometry), Parameter space, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, Metal, [SPI]Engineering Sciences [physics], law, visual_art, 0103 physical sciences, visual_art.visual_art_medium, Optoelectronics, Point (geometry), 0210 nano-technology, business
Abstract: 2016 46th European Solid-State Device Research Conference (ESSDERC) : 12-15 Sept. 2016 / [organizers and partner institutions: École Polytechnique Fédérale de Lausanne [und 6 andere] 46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, 12 Sep 2016 - 15 Sep 2016; [Piscataway, NJ] : IEEE 7599629, 236-239 (2016). doi:10.1109/ESSDERC.2016.7599629, Published by IEEE, [Piscataway, NJ]
Published: 2016
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44. Mechanically robust 39 GHz cut-off frequency graphene field effect transistors on flexible substrates

Author: Zurutuza Amaia, Vanessa Avramovic, Stefano Borini, Alba Centeno, Henri Happy, Emiliano Pallecchi, Samiul Haque, Wei Wei, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon-IEMN (CARBON-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de Chimie et Physique Quantiques (LCPQ), Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), Graphenea S.A., EU European Commission [604391], French RENATECH network, Renatech Network, European Project: 604391,EC:FP7:ICT,FP7-ICT-2013-FET-F,GRAPHENE(2013), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Carbon - IEMN (CARBON - IEMN), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), and Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)
Subjects: 010302 applied physics, chemistry.chemical_classification, Materials science, business.industry, Graphene, Bend radius, 02 engineering and technology, Polymer, 021001 nanoscience & nanotechnology, Graphene field effect transistors, Polarization (waves), 01 natural sciences, 7. Clean energy, Flexible electronics, Cutoff frequency, law.invention, [SPI]Engineering Sciences [physics], chemistry, Robustness (computer science), law, 0103 physical sciences, Optoelectronics, General Materials Science, 0210 nano-technology, business
Abstract: International audience; Graphene has been regarded as a promising candidate channel material for flexible devices operating at radio-frequency (RF). In this work we fabricated and fully characterized double bottom-gate graphene field effect transistors on flexible polymer substrates for high frequency applications. We report a record high as-measured current gain cut-off frequency (f(t)) of 39 GHz. The corresponding maximum oscillation frequency (f(max)) is 13.5 GHz. These state of the art high frequency performances are stable against bending, with a typical variation of around 10%, for a bending radius of up to 12 mm. To demonstrate the reliability of our devices, we performed a fatigue stress test for RF-GFETs which were dynamically bend tested 1000 times at 1 Hz. The devices are mechanically robust, and performances are stable with typical variations of 15%. Finally we investigate thermal dissipation, which is a critical parameter for flexible electronics. We show that at the optimum polarization the normalized power dissipated by the GFETs is about 0.35 mW mu m(-2) and that the substrate temperature is around 200 degree centigrade. At a higher power, irreversible degradations of the performances are observed. Our study on state of the art flexible GFETs demonstrates mechanical robustness and stability upon heating, two important elements to assess the potential of GFETs for flexible electronics.
Published: 2016
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45. Correction: Transport mechanisms in a puckered graphene-on-lattice

Author: A. Díaz Álvarez, D. Desremes, Damien Eschimese, Jimmy Xu, J-F. Lampin, Bruno Grandidier, François Vaurette, Maxime Berthe, Emiliano Pallecchi, D. Vignaud, Elisabeth Galopin, Wei Wei, Henri Happy, C Brillard, S. Eliet, O. Lancry, Tao Xu, and Bin Wei
Subjects: Materials science, Condensed matter physics, Graphene, law, Lattice (order), Hardware_INTEGRATEDCIRCUITS, General Materials Science, Nanoscopic scale, law.invention
Abstract: Correction for ‘Transport mechanisms in a puckered graphene-on-lattice’ by T. Xu et al., Nanoscale, 2018, 10, 7519–7525.
Published: 2019
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46. Laterally inhomogeneous Au intercalation in epitaxial graphene on SiC(0001): a multimethod electron microscopy study

Author: Claire Mathieu, Tevfik Onur Menteş, Rachid Belkhou, Andrea Locatelli, Emiliano Pallecchi, Gilles Patriarche, Abdelkarim Ouerghi, Laboratoire d'Etude des NanoStructures et Imagerie de Surface (LENSIS), Service de physique de l'état condensé (SPEC - UMR3680), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Elettra Sincrotrone Trieste, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), and Synchrotron SOLEIL (SSOLEIL)
Subjects: [PHYS]Physics [physics], Materials science, Graphene, business.industry, Doping, Nanotechnology, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, chemistry.chemical_compound, chemistry, law, Transmission electron microscopy, 0103 physical sciences, Silicon carbide, Optoelectronics, 010306 general physics, 0210 nano-technology, Bilayer graphene, business, Layer (electronics), Graphene nanoribbons, Graphene oxide paper
Abstract: International audience; Epitaxial graphene is of particular interest because of its tunable electronic structure. One important approach to tune the electronic properties of graphene relays on intercalating atomic species between graphene and the topmost silicon carbide layer. Here, we investigated the morphology and electronic structure of gold-intercalated epitaxial graphene using a multitechnique approach combining spectroscopic photoemission low-energy electron microscopy (SPELEEM) for chemical and structural characterization at mesoscopic length scale and with transmission electron microscopy (STEM) at the atomic level. Deposition of gold on ex situ prepared graphene on SiC(0 0 0 1) results in the partial intercalation of Au adatoms under graphene, with the formation of a buffer layer of variable thickness. Gold has also shown to aggregate in nanometer-sized clusters lying on top of the same graphene film. X-ray photo-emission electron microscopy measurements indicate that Au induces only small changes in the doping of the graphene layer, which does not develop a quasi free-standing behavior.
Published: 2016
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47. Development of an ultralow current amplifier for scanning tunneling microscopy

Author: Giovanni Aloisi, Emiliano Pallecchi, Leonardo Lanzi, and Marcello Carlà
Subjects: Transimpedance amplifier, Materials science, Current-feedback operational amplifier, business.industry, Amplifier, Amplification factor, law.invention, Optics, law, Microscopy, Mica, Current (fluid), Scanning tunneling microscope, business, Instrumentation
Abstract: A transimpedance amplifier for ultralow current scanning tunneling microscopy has been developed. Conditions for maximum signal-to-noise ratio have been explored, showing that best results can be obtained with a simple circuital arrangement. The amplifier associates a very high amplification factor (0.5 V/pA) to a sufficiently wide bandwith (1.6 kHz) and very low noise current (49 fA). Those features enable microscopy studies on an almost insulating surface, such as a freshly cleaved mica surface.
Published: 2004
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48. Fabrication and characterization of CVD grown graphene based field-effect transistor

Author: Wei Wei, Henri Happy, Mohamed Belhaj, Emmanuelle Pichonat, David Mele, Emiliano Pallecchi, D. Vignaud, Geetanjali Deokar, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Renatech Network
Subjects: Fabrication, Materials science, Substrates, Graphene, Logic gates, Nanotechnology, Transistors, Characterization (materials science), law.invention, Cutoff frequency, [SPI]Engineering Sciences [physics], law, Field-effect transistor, Bilayer graphene, Scanning electron microscopy, Graphene nanoribbons, Graphene oxide paper
Abstract: International audience; In this work, we present both fabrication process and characterization of graphene field-effect transistors. Large scale monolayer graphene was grown by chemical vapor deposition (CVD) on Cu foils and transferred over pre-patterned back-gated devices on Si/SiO2 substrate. Scanning electron microscopy, Raman spectroscopy and Hall effect measurement were used for characterizing graphene quality before and after the transfer. It was found that monolayer graphene with a low defect density and hole mobility up to 3180cm(2)/Vs at n=1.3.10(12) cm(-2), could be obtained. For device characterization, devices with different gate length were discussed. We report an intrinsic current gain cut-off frequency (ft) of 15.5 GHz and maximum oscillation frequency of 12 GHz, deduced from the S-parameters measurements for device with gate length of 100 nm. This study demonstrates the potential of CVD-grown graphene for high speed electronics in combination with a technological process compatible with arbitrary substrates.
Published: 2014
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49. Graphene field effect transistors on SiC with T-Shaped gate: Homogeneity and RF performance

Author: Mohamed Salah Khenissa, Emiliano Pallecchi, Mohamed Belhaj, Ivy Colambo, Henri Happy, D. Vignaud, David Mele, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: Materials science, business.industry, Graphene, Gate dielectric, Contact resistance, Electrical engineering, law.invention, [SPI]Engineering Sciences [physics], chemistry.chemical_compound, chemistry, law, Gate oxide, Logic gate, Silicon carbide, Optoelectronics, Field-effect transistor, business, Graphene nanoribbons
Abstract: In this letter we present our work on top-gated graphene field-effect transistors GFET. The Transistors have been processed on epitaxial graphene synthesized on the Si-face of a SiC substrate, using a high-k dielectric Al 2 O 3 as a gate oxide. In order to reduce the gate access resistance, we chosed a T-gate geometry. The Hall mobility is on the order 780 cm2/vs at room temperature, for an intrinsic carrier concentration of the order of 8.7 10+12 /cm2. We used Nickel as a contact material, The contact resistance was measured by the Transmission Line Method (TLM) where the value of ρ c is 2 × 10−6 Ω.cm2. We characterized our devices from DC up to 67 GHz. Cut-off frequency f t as high as 90 GHz has been obtained for the 170 nm gate length transistors. The maximum value of f t is 43 GHz and the maximum value of f max is 23 GHz. Finally, we studied the homogeneity of the GFETS realized across the whole sample surface (1/4 of inch).
Published: 2014
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50. High frequency characterization and compact electrical modelling of Graphene Field Effect Transistors

Author: Mohamed Salah Khenissa, Poornakarthik Nakkala, Henri Happy, Emiliano Pallecchi, Mohamed Belhaj, D. Vignaud, Michel Campovecchio, David Mele, Audrey Martin, Ivy Colambo, C2S2 (XLIM-C2S2), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: Materials science, Oscillation, business.industry, Graphene, Transistor, Logic gates, Nanotechnology, Field effect transistors, Current measurement, Signal, [SPI.TRON]Engineering Sciences [physics]/Electronics, law.invention, Cutoff frequency, law, Frequency measurement, Solid modeling, Nonlinear modelling, Nano, Optoelectronics, business, Graphene nanoribbons, Microwave
Abstract: International audience; This paper deals with both DC and high frequency characterization of graphene devices, associated to compact electrical modelling. Pulsed I-V and microwave characterization of several Graphene Field-Effect Transistor (GFET) generations fabricated on SiC substrates were investigated in order to derive a first approach for non-linear device modelling. As illustrated here with a Graphene Nano Ribbon FET (GNR FET), a compact electrical model was presented accounting the DC and HF characteristics in broad range of operating conditions. The differences between DC and pulsed I-V characterizations of the GNR FET are investigated and compared to simulations. The small signal behavior and some figure of merits (FOM) like current gain cut-off frequency ft maximum oscillation frequency fmax. The nonlinear modelling of GNR FET is becoming of prime importance along with technological efforts to demonstrate the actual potential of this promising technology. This approach was also applied to conventional GFET, with a large flake of graphene used as a device channel.
Published: 2014
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