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High-Frequency Limits of Graphene Field-Effect Transistors with Velocity Saturation

Authors :
Quentin Wilmart
Mohamed Boukhicha
Holger Graef
David Mele
Jose Palomo
Michael Rosticher
Takashi Taniguchi
Kenji Watanabe
Vincent Bouchiat
Emmanuel Baudin
Jean-Marc Berroir
Erwann Bocquillon
Gwendal Fève
Emiliano Pallecchi
Bernard Plaçais
Source :
Applied Sciences, Vol 10, Iss 2, p 446 (2020)
Publication Year :
2020
Publisher :
MDPI AG, 2020.

Abstract

The current understanding of physical principles governing electronic transport in graphene field effect transistors (GFETs) has reached a level where we can model quite accurately device operation and predict intrinsic frequency limits of performance. In this work, we use this knowledge to analyze DC and RF transport properties of bottom-gated graphene on boron nitride field effect transistors exhibiting pronounced velocity saturation by substrate hyperbolic phonon polariton scattering, including Dirac pinch-off effect. We predict and demonstrate a maximum oscillation frequency exceeding 20 GHz . We discuss the intrinsic 0.1 THz limit of GFETs and envision plasma resonance transistors as an alternative for sub-THz narrow-band detection.

Details

Language :
English
ISSN :
20763417 and 10020446
Volume :
10
Issue :
2
Database :
Directory of Open Access Journals
Journal :
Applied Sciences
Publication Type :
Academic Journal
Accession number :
edsdoj.7cac75fb2c314e8793fe26d5d6c47092
Document Type :
article
Full Text :
https://doi.org/10.3390/app10020446