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Tailoring the specific stacking sequences (polytypes) of layered materials represents a powerful strategy to identify and design novel physical properties. While nanostructures built upon transition-metal dichalcogenides (TMDs) with either the 2H or 3R crystalline phases have been routinely studied, our knowledge of those based on mixed 2H/3R polytypes is far more limited. Here we report on the characterization of mixed 2H/3R free-standing WS$_2$ nanostructures displaying a flower-like configuration by means of advanced transmission electron microscopy. We correlate their rich variety of shape-morphology combinations with relevant local electronic properties such as their edge, surface, and bulk plasmons. Electron energy-loss spectroscopy combined with machine learning reveals that the 2H/3R polytype displays an indirect band gap with $E_{\rm BG}=1.6^{+0.3}_{-0.2}~{\rm eV}$. Further, we identify the presence of energy-gain peaks in the EEL spectra characterized by a gain-to-loss ratio $I_G/I_L>1$. Such property could be exploited to develop novel cooling strategies for atomically thin TMD nanostructures and devices built upon them. Our results represent a stepping stone towards an improved understanding of TMDs nanostructures based on mixed crystalline phases., 24 pages, 6 figures, and supplementary information

3D electron diffraction (3D ED)/Micro electron diffraction (MicroED) has extended the limits of crystallography by enabling the determination of three dimensional molecular structures from sub-μm microcrystals. However, 3D ED/microED measurements using current state-of-the-art electron microscopes require experts in both electron microscopy and crystallography making the method rather difficult for researchers who simply need structures. Here, we present a diffractometer specifically designed for 3D ED/microED and show how it works for determining crystal structures. The newly developed electron diffractometer will provide many researchers with an easy path to structure determination of crystals that are less than 1 μm in size.

It has been reported that dislocations with 1/3 $$ \left\langle {\bar{1}101} \right\rangle $$ edge component of the Burgers vector are formed in {1 $$ \bar{1} $$ 04}/ $$ \left\langle {11\bar{2}0} \right\rangle $$ low-angle grain boundaries of alumina (α-Al2O3). These dislocations dissociate into two partial dislocations with a stacking fault on the (0001) plane (Tochigi et al. in J Mater Sci 46:4428–4433, 2011). However, the dissociation reaction of these dislocations has not been determined so far. In this study, the structures of the dissociated dislocations and the (0001) stacking fault were investigated by transmission electron microscopy and theoretical calculations. It was revealed that the dissociated dislocations were generated from the 1/3 $$ \left\langle {\bar{1}101} \right\rangle $$ perfect edge dislocation by the reaction of 1/3 $$ \left\langle {\bar{1}101} \right\rangle $$ → 1/18 $$ \left\langle {\bar{4}223} \right\rangle $$ + 1/18 $$ \left\langle {\bar{2}4\bar{2}3} \right\rangle $$ . Furthermore, electron energy loss spectroscopy analysis was performed to examine the atomic/electronic structure of the (0001) stacking fault. In the observed spectra, a chemical shift and intensity decrease were found at the oxygen K-edge. Theoretical spectrum analysis using first-principles calculations revealed that the characteristic features of the spectra are originated from the local atomic configurations of the (0001) stacking fault.

We report the observation of corrosion of gold at the nanoscale, in which nanometer-sized gold can be corroded in the air in the presence of copper at room temperature during ageing to form a compound of gold with residual copper. The compound is a nanoscale beltlike two-dimensional structure that grows from gold nanoparticles. Using high-resolution electron microscopy and chemical analyses, we show that the structure consists of alternating rows of gold and copper atoms. The atomic columns of gold are arranged in rows separated by 0.5 nm, and the structure extends in a perpendicular direction to these. Density functional theory calculations of an atomic model of this two-dimensional material consisting of gold, copper, and oxygen suggest that it is a narrow bandgap semiconductor. This beltlike structure, growing around Au fine wire bonding in nanodevices, may cause their failure in the electric contact in nanodevices. Thus, this study has direct relevance to the use of gold as a contact material in semiconductor devices. In addition, possible future applications of the observed structures as additives in organic solar cells are discussed.

Elemental doping is a universal strategy in controlling the functionalities of materials that strongly correlate with naturally formed atomic defects. Element-resolved chemical mapping for atomic defects has answered numerous problems on the relations between defective structures and properties. However, tracking small amounts of dopants in multicomponent bulks and clarifying their doping behaviors remain challenging. Using advanced X-ray spectroscopy, the excess Cu doping behavior in ternary Bi2Te2·7Se0.3 bulk alloy is visualized with the unprecedented detectability from sub-one atomic percent of concentration. The low content of 0.2 at.% Cu preferentially occupies the Bi site, while Cu atoms are found in three crystallographic sites of Bi2Te3 structure and van der Waals gap at high Cu content of 1.2 at.%. These behaviors explain the nontrivial role of Cu dopants on carrier generation processes and relevant thermoelectric properties of Bi2Te2·7Se0.3. The atomic-level identification should also stimulate the elucidation of diverse properties in doped nanomaterials and quantum phenomena in doped topological insulators.

Layered transition metal dichalcogenides (TMDs) exist in a range of crystal phases with distinct electronic character. Some crystal phases are known to exhibit unique in-plane anisotropy characterized by a periodic distortion of the lattice and a formation of metal–metal bonding network. Here, we report in situ observation of dynamic structural evolution in the one-dimensional zigzag chains of single layer WS2 induced by electron beam irradiation. Metastable zigzag chains of tungsten atoms are found to undergo reorganization of metal–metal bonds, resulting in emergence of tetramer clusters and zigzag chains with a new orientation. Our first-principles calculations reveal a small (∼0.1 eV per formula unit) activation energy barrier for monolayer WS2 zigzag chain reorientation and a metastable transition state in the form of tetramer clusters. We further show that local tetramer clusters can be induced and stabilized by local electronic charging effects. The formation of local tetramer clusters indicate tha...

Ionic liquids show characteristic properties derived from them being composed of only molecular ions, and have recently been used as solvents for chemical reactions and as electrolytes for electrochemical devices. The liquid structures, i.e., ionic distributions, form when solutes are dissolved in ionic liquids and fundamentally affect the reactions and transfer efficiency in such solutions. In this study, we directly observe the liquid structure in a solution of the long-chain ionic liquid 1-octyl-3-methylimidazolium bromide (C8mim Br) and barium stearate (Ba(C17H35COO)2) using the annular dark-field method of scanning transmission electron microscopy (ADF-STEM). The ADF image shows a 10 nm-scale heterogeneity in the image intensity, which reflects the heterogeneous ionic distribution in the solution. The number density distributions of all the component ions (C8mim+, Br−, Ba2+, and C17H35COO−) were estimated from the ADF image intensity and then visualized. These ionic distribution maps depicted the spatial relationships between the ions at the sub-nanometer scale and revealed that the heterogeneity is largely derived from the large differences in size, charge distributions, and van der Waals interactions.

In this article, we report the development of a new 200-kV analytical electron microscope equipped with a monochromator with an integrated double Wien-filter system. It enables us to study the electronic structures of materials in detail using electron energy-loss spectroscopy (EELS) analysis at an atomic scale. A highly monochromated and isotropically round electron probe is produced on the specimen plane. The ultimate energy resolutions with 0.1-s acquisition times are measured to be 36 meV at 200 kV and 30 meV at 60 kV. In an EELS mapping experiment performed on SrTiO3 with a monochromated electron probe whose energy resolution is 146 meV, an elemental map exhibits atomic resolution.

Edge structures are low-dimensional defects unavoidable in layered materials of the transition metal dichalcogenides (TMD) family. Among the various types of such structures, the armchair (AC) and zigzag (ZZ) edge types are the most common. It has been predicted that the presence of intrinsic strain localized along these edges structures can have direct implications for the customization of their electronic properties. However, pinning down the relation between local structure and electronic properties at these edges is challenging. Here, we quantify the local strain field that arises at the edges of MoS2 flakes by combining aberration-corrected transmission electron microscopy (TEM) with the geometrical-phase analysis (GPA) method. We also provide further insight on the possible effects of such edge strain on the resulting electronic behavior by means of electron energy loss spectroscopy (EELS) measurements. Our results reveal that the two-dominant edge structures, ZZ and AC, induce the formation of different amounts of localized strain fields. We also show that by varying the free edge curvature from concave to convex, compressive strain turns into tensile strain. These results pave the way toward the customization of edge structures in MoS2, which can be used to engineer the properties of layered materials and thus contribute to the optimization of the next generation of atomic-scale electronic devices built upon them.

Edge structures are low-dimensional defects unavoidable in layered materials of the transition metal dichalcogenides (TMD) family. Among the various types of such structures, the armchair (AC) and zigzag (ZZ) edge types are the most common. It has been predicted that the presence of intrinsic strain localized along these edges structures can have direct implications for the customization of their electronic properties. However, pinning down the relation between local structure and electronic properties at these edges is challenging. Here, we quantify the local strain field that arises at the edges of MoS2 flakes by combining aberration-corrected transmission electron microscopy (TEM) with the geometrical-phase analysis (GPA) method. We also provide further insight on the possible effects of such edge strain on the resulting electronic behavior by means of electron energy loss spectroscopy (EELS) measurements. Our results reveal that the two-dominant edge structures, ZZ and AC, induce the formation of different amounts of localized strain fields. We also show that by varying the free edge curvature from concave to convex, compressive strain turns into tensile strain. These results pave the way toward the customization of edge structures in MoS2, which can be used to engineer the properties of layered materials and thus contribute to the optimization of the next generation of atomic-scale electronic devices built upon them.

Core–shell nanocatalysts have demonstrated potential as highly active low-Pt fuel cell cathodes for the oxygen reduction reaction (ORR); however, challenges remain in optimizing their surface and interfacial structures, which often exhibit undesirable structural degradation and poor durability. Here, we construct an unsupported nanoporous catalyst with a Pt–Pd shell of sub-nanometre thickness on Au, which demonstrates an initial ORR activity of 1.140 A mgPt−1 at 0.9 V. The activity increases to 1.471 A mgPt−1 after 30,000 potential cycles and is stable over a further 70,000 cycles. Using aberration-corrected scanning transmission electron microscopy and atomically resolved elemental mapping, the origin of the activity change is revealed to be an atomic-scale evolution of the shell from an initial Pt–Pd alloy into a bilayer structure with a Pt-rich trimetallic surface, and finally into a uniform and stable Pt–Pd–Au alloy. This Pt–Pd–Au alloy possesses a suitable configuration for ORR, giving a relatively low free energy change for the final water formation from adsorbed OH intermediate during the reaction. Metal alloys possessing core–shell structures have potential as low-Pt catalysts for the oxygen reduction reaction in fuel cells, but can suffer from poor stability. Using high-resolution microscopy, Li et al. find that a Pt–Pd–Au catalyst undergoes surface atomic rearrangement and becomes more active on electrochemical cycling.

Crystal defects play a major role in determining the electrical properties of semiconductors. Hydrothermally grown TiO2 rutile nanowire arrays are frequently used as electrodes in photovoltaic devices. However, they exhibit a characteristic defect structure that may compromise performance. A detailed scanning and transmission electron microscopy study of these defects reveals their internal structure and is suggestive at their origin. We propose an anisotropic layer-by-layer growth model, which combined with steric effects and Coulombic repulsion on high atom-density facets, can explain the observed V-shaped defect cascade in the nanowires.

Moiré method in scanning transmission electron microscopy allows observing a magnified two-dimensional atomic column elemental map of a higher pixel resolution with a lower electron dose unlike conventional atomic column mapping. The magnification of the map is determined by the ratio between the pixel size and the lattice spacing. With proper ratios for the x and y directions, we could observe magnified elemental maps, homothetic to the atomic arrangement in the sample of SrTiO3 [0 0 1]. The map showed peaks at all expected oxygen sites in SrTiO3 [0 0 1].

The physical basis for using a probe-position integrated cross section (PICS) for a single column of atoms as an effective way to compare simulation and experiment in high-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) is described, and the use of PICS in order to make quantitative use of image intensities is evaluated. It is based upon the calibration of the detector and the measurement of scattered intensities. Due to the predominantly incoherent nature of HAADF STEM, it is found to be robust to parameters that affect probe size and shape such as defocus and source coherence. The main imaging parameter dependencies are on detector angle and accelerating voltage, which are well known. The robustness to variation in other parameters allows for a quantitative comparison of experimental data and simulation without the need to lit parameters. By demonstrating the application of the [PICS to the chemical identification of single atoms in a heterogeneous catalyst and in thin, layered-materials, we explore some of the experimental considerations when using this approach. (C) 2013 Elsevier B.V. All rights reserved.

β-FeSi2 flat islands have been fabricated on ultra-thin oxidized Si(111) surfaces by Fe deposition on Si nanodots. The microstructure and interdiffusion behaviour of the β-FeSi2/Si(111) system at the atomic level were studied by using spherical aberration-corrected high-angle annular dark-field scanning transmission electron microscopy and energy dispersive X-ray spectroscopy. The formed β-FeSi2 flat islands had a disc shape with an average size of 30–150 nm width and 10–20 nm height, and were epitaxically grown on high-quality single-phase Si with a crystallographic relationship (110)β-FeSi2/(111)Si and [001]β-FeSi2/[1\bar 10]Si. Moreover, the heterojunction between the β-FeSi2(110) flat islands and the Si(111) substrate was an atomically and chemically abrupt interface without any irregularities. It is believed that these results are caused by the use of ultra-thin SiO2 films in our fabrication method, which is likely to be beneficial particularly for fabricating practical nanoscaled devices.

The formation of characteristic inversion domain structures in zinc oxide (ZnO) is triggered by the addition of trivalent Fe(3+) or In(3+) dopants. As-grown and inverted ZnO domains are separated by two types of inversion domain boundaries (IDBs): basal b-IDBs parallel to {0001}, and pyramidal p-IDBs parallel to {21¯1¯5} lattice planes in three equivalent variants. Cs-corrected analytical TEM/STEM is the method of choice for a comprehensive structural and compositional characterization of these materials. It is shown by electron and X-ray spectroscopic imaging in STEM that dopant species are essentially localized within both types of IDBs, whereas solid solubility of trivalent dopants within ZnO domains is rather low (0.5at%). Under the assumption of one monolayer per IDB the relation between inversion domain structure and integral dopant concentration correlates well with integral EDS and EELS measurements in STEM over well defined sample regions. The presence of one close-packed monolayer of trivalent dopant ions within a b-IDB is unambiguously confirmed by atomic resolution STEM imaging. Columns of cations are clearly imaged in high-angle annular dark-field (HAADF) STEM imaging, whereas annular bright-field (ABF) STEM is capable of imaging both light and heavy atom columns simultaneously. It is shown that structural details in ABF images are directly interpretable even in specimen regions with thickness50nm. The structural inversion associated with a stacking fault as a consequence of the presence of octahedrally coordinated In(3+) in the b-IDB is directly revealed by atomic resolution imaging. Column positions in atomic resolution ABF imaging in In2O3-ZnO nanorods show that the oxygen sub-lattice continues across the b-IDB with only marginal distortions, whereas the cation sub-lattice suffers a rigid shift relative to the oxygen lattice as a result of the coordination geometry of ZnO4 tetrahedrons sharing common oxygen ions with the InO6 coordination octahedrons.

STEM spectrum-imaging with collecting EDX signal is considered in view of the extraction of maximum information from very noisy data. It is emphasized that spectrum-images with weak EDX signal often suffer from information loss in the course of PCA treatment. The loss occurs when the level of random noise exceeds a certain threshold. Weighted PCA, though potentially helpful in isolation of meaningful variations from noise, might provoke the complete loss of information in the situation of weak EDX signal. Filtering datasets prior PCA can improve the situation and recover the lost information. In particular, Gaussian kernel filters are found to be efficient. A new filter useful in the case of sparse atomic-resolution EDX spectrum-images is suggested.

Epitaxial strain, layer confinement and inversion symmetry breaking have emerged as powerful new approaches to control the electronic and atomic-scale structural properties in complex metal oxides. Nickelate heterostructures, based on RENiO$_3$, where RE is a trivalent rare-earth cation, have been shown to be relevant model systems since the orbital occupancy, degeneracy, and, consequently, the electronic/magnetic properties can be altered as a function of epitaxial strain, layer thickness and superlattice structure. One such recent example is the tri-component LaTiO$_3$-LaNiO$_3$-LaAlO$_3$ superlattice, which exhibits charge transfer and orbital polarization as the result of its interfacial dipole electric field. A crucial step towards control of these parameters for future electronic and magnetic device applications is to develop an understanding of both the magnitude and range of the octahedral network's response towards interfacial strain and electric fields. An approach that provides atomic-scale resolution and sensitivity towards the local octahedral distortions and orbital occupancy is therefore required. Here, we employ atomic-resolution imaging coupled with electron spectroscopies and first principles theory to examine the role of interfacial charge transfer and symmetry breaking in a tricomponent nickelate superlattice system. We find that nearly complete charge transfer occurs between the LaTiO$_3$ and LaNiO$_3$ layers, resulting in a Ni$^{2+}$ valence state. We further demonstrate that this charge transfer is highly localized with a range of about 1 unit cell, within the LaNiO$_3$ layers. The results presented here provide important feedback to synthesis efforts aimed at stabilizing new electronic phases that are not accessible by conventional bulk or epitaxial film approaches.

We demonstrate that the aberration-corrected scanning transmission electron microscope has a sufficiently small depth of field to observe depth-dependent atomic displacements in a crystal. The depth-dependent displacements associated with the Eshelby twist of dislocations in GaN normal to the foil with a screw component of the Burgers vector are directly imaged. We show that these displacements are observed as a rotation of the lattice between images taken in a focal series. From the sense of the rotation, the sign of the screw component can be determined.

Structural characterization of 2D nanomaterials is an important step towards their future applications. In this work we carried out imaging and structural analysis of 2D h-BN produced by chemical-exfoliation, emphasizing the stacking order in few-layer sheets. Our analysis, for the first time has shown conclusively that non-bulk stacking can exist in 2D h-BN.

The structure of a b= dislocation formed in the {11¯00}/ 2° low-angle grain boundary of alumina was observed by scanning transmission electron microscopy (STEM). It was found that the dislocation dissociate-s into 1/3 partial-dislocation triplets with two stacking faults on the {11¯00} plane. The atomic structure of the {11¯00} stacking faults was characterized by annular bright field STEM (ABF-STEM). The two stacking faults were found to have a stacking sequence of …ABCCABC… and …ABCBCAB…, wh-ich is consistent with a former report. ABF-STEM image simulation was performed using structure models with the {11¯00} stacking faults optimized by first-principles calculations. The overall features of the experimental and the simulated results agree with each other. However, slight differences in contrast were recognized in the vicinity of the stacking faults, suggesting that there are small differences between the observed structures and the theoretical models.

Experimental parameters used in the annular bright field (ABF) imaging method were tested using images simulated with the multislice method. Images simulated under identical conditions were found to agree well with experimental images. The ABF technique was shown to be relatively insensitive to the sample thickness and the defocus. In experimental ABF images, atomic columns exhibited dark contrast over a wide range of specimen thickness and defocus values, from 10 to 70 nm and −20 to +20 nm, respectively. A series of diffraction patterns at atomic columns, obtained using the diffraction imaging method, exhibited higher intensities in their central regions (0–11 mrad) for light elements and in their peripheral regions (11–22 mrad) for heavy elements. The results indicated that the contrast of light elements is enhanced by subtraction of the central region of the transmitted beam, since this is blocked by a circular mask in the ABF-STEM technique. Thus, the overall contrast of light elements is greatly improved, allowing them to be clearly visualized.

In order to estimate the probe size on the specimen surface in a newly developed low-acceleration-voltage (30–60 kV) atomic-resolution scanning transmission electron microscopy (STEM), we compared the intensity profiles of experimentally obtained annular dark field (ADF)-STEM images of Si–Si dumbbells and those of images simulated using a multislice method which takes chromatic aberration into account. However, the simulated ADF images at 30 and 60 kV were found not to match the corresponding experimental images. Subsequently, the simulated images were convolved with probe functions (normal distributions) of different widths until a good match was obtained between the images. This allowed the probe shapes corresponding to the experimental conditions to be determined. ADF-STEM images with chromatic aberration could then be calculated by an incoherent superposition of these probe functions over a range of energies. The full widths at half maximum for the probe functions were estimated to be 99.2 pm for 30 kV and 92.8 pm for 60 kV. The D59 diameters were calculated to be 154.0 pm for 30 kV and 127.8 pm for 60 kV. This means that the 30-kV probe has a larger tail than the 60-kV probe.

ZnO with additions of Fe2O3 or In2O3 shows characteristic inversion domain structures. ZnO domains are separated by two types of inversion domain boundaries (IDBs): basal b-IDBs parallel to (0 0 0 1) planes, and complementary pairs of three possible variants of pyramidal p-IDBs parallel to { 2 1 ¯ 1 ¯ 5 } lattice planes. The structure and composition of IDBs were investigated in a sophisticated aberration-corrected scanning transmission electron microscope (probe-corrected TEM/STEM). It is shown that Fe and In additions are essentially located in monolayers within the IDBs, and EELS electron spectroscopic imaging (ESI) as well as EDS spectroscopic imaging by X-rays (SIX) are capable of rapidly mapping the element distribution. With solid solubility of trivalent dopant species well below 1 at.% within ZnO domains, the lateral spacings of b-IDBs are inversely proportional to the dopant concentration. Quantification of data acquired by ESI and SIX from well defined sample regions in STEM both confirm the assumption of one full monolayer of dopants per IDB. Atom columns of cations are well resolved in HAADF STEM imaging; experimental contrast intensities are approximately proportional to Z1.6. Furthermore, annular bright-field (ABF)-STEM imaging is capable of resolving oxygen columns even in thick sample regions, thus providing highly localized information on atom positions and lattice distortions, and enables the construction of more reliable structure models of IDBs in doped ZnO.

The crystal structure and microstructure of ReSi1.75 were investigated by synchrotron X-ray diffraction combined with scanning transmission electron microscopy. ReSi1.75 contains an ordered arrangement of vacancies in Si sites in the underlying tetragonal C11b lattice of the MoSi2-type and the crystal structure is monoclinic with the space group Cm. Atomic positions of Si atoms near vacancies are considerably displaced from the corresponding positions in the parent C11b structure, and they exhibit anomalously large local thermal vibration accompanied by large values of atomic displacement parameter. There are four differently-oriented domains with two of them being related to each other by the 90° rotation about the c-axis of the underlying C11b lattice and the other two being their respective twins. The habit planes for domain boundaries observed experimentally are consistent with those predicted with ferroelastic theory.

Annular bright field scanning transmission electron microscopy, which has recently been established to produce directly interpretable images with both light and heavier atomic columns visible simultaneously, is shown to allow directly interpretable imaging of the oxygen columns within the Σ13[12¯10](101¯4) pyramidal twin grain boundary in α-Al(2)O(3). By using information in the high-angle annular dark field image and annular bright field images simultaneously, we estimate the specimen thickness and finite source size, and use them to explore in simulation the issue of dark contrast in the vicinity of the grain boundary in the annular dark field image.

The resolution of electron microscopy has increased through the years, and scientists have been able to measure progressively lighter elements. The ultimate goal has now been reached with the imaging of hydrogen atoms. Enhancing the imaging power of microscopy to identify all chemical types of atom, from low- to high-atomic-number elements,would significantly contribute for a direct determinationof material structures. Electron microscopes have successfully provided images of heavy-atom positions, particularly by the annular dark-field method1,2, but detection of light atoms was difficult owing to their weak scattering power. Recent developments of aberration-correction electron optics3,4,5 have significantly advanced the microscope performance, enabling identification of individual light atoms such as oxygen6,7,8,9, nitrogen7,9, carbon9,10,11, boron9 and lithium12,13. However, the lightest hydrogen atom has not yet been observed directly, except in the specific condition of hydrogen adatoms on a graphene membrane14. Here we show the first direct imaging of the hydrogen atom in a crystalline solid YH2, based on a classic ‘hollow-cone’ illumination theory15,16,17,18 combined with state-of-the-art scanning transmission electronmicroscopy. The optimizedhollow-cone condition derived from the aberration-corrected microscope parameters confirms that the information transfer can be extended to 22.5 nm−1, which corresponds to a spatial resolution of about 44.4 pm. These experimental conditions can be readily realized with the annular bright-field imaging in scanning transmission electron microscopy19,20 according to reciprocity21, revealing successfully the hydrogen-atom columns as dark dots, as anticipated from phase contrast of a weak-phase object22.

Most functional materials (ceramics, semi-conductor and metallic alloys) contain not only heavier elements but also light elements, such as oxygen, nitrogen and carbon. It is important to know the atomic arrangement of these elements. However, High angle annular dark field (HAADF) images of those materials usually do not produce any contrast from the light element columns, because the contrast in the image is approximately proportional to the square of the atomic number. Annular bright field (ABF) imaging by Scanning transmission electron microscope (STEM) has recently been found as a novel technique to visualize light elements and heavier elements in the same image. The recent theoretical study by Findley et al7,8) reveals that ABF imaging produces robust dark contrast on atomic columns which is non-oscillating: independent of sample thickness and of the focus of its image. This characteristic of the ABF imaging results in easily interpretable images unlike STEM BF imaging. This paper describes experimental details about results of the visualization of light elements for three ceramics (two oxides and one nitride) using an ABF imaging technique.