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326 results on '"Christophe Gaquiere"'

1. Innovative millimetre‐wave resonators based on slow‐wave coplanar stripline components

Author

Abdelhalim A. Saadi, Marc Margalef‐Rovira, Youcef Amara, Loïc Vincent, Sylvie Lepilliet, Christophe Gaquiere, and Philippe Ferrari

Subjects
Telecommunication, TK5101-6720, Electricity and magnetism, QC501-766
Abstract

Abstract In this paper, the slow‐wave coplanar stripline (S‐CPS) technology is utilised to design high performance and small footprint resonators operating within the millimetre‐wave band from 50 to 80 GHz. The proposed resonators are designed based on high quality factor quasi‐lumped capacitances and inductances offering a great flexibility in terms of design. The derivation of these components from the S‐CPS is explained theoretically and their behaviour is validated by EM simulation; an equivalent electrical model is also developed. The proposed concepts are demonstrated in the BiCMOS 55‐nm technology, and a good agreement between modelling, EM simulation and measurement results is achieved. The proposed devices could later be considered as interesting elementary blocks for the design of mm‐wave filters.

Published
2022
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2. SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems

Author

Thomas Zimmer, Josef Bock, Fred Buchali, Pascal Chevalier, Michael Collisi, Bjorn Debaillie, Marina Deng, Philippe Ferrari, Sebastien Fregonese, Christophe Gaquiere, Haitham Ghanem, Horst Hettrich, Alper Karakuzulu, Tim Maiwald, Marc Margalef-Rovira, Caroline Maye, Michael Moller, Anindya Mukherjee, Holger Rucker, Paulius Sakalas, Rolf Schmid, Karina Disch, Karsten Schuh, Wolfgang Templ, Akshay Visweswaran, and Thomas Zwick

Subjects
Heterojunction bipolar transistors (HBTs), high-frequency measurements, millimeter wave, SiGe, technologies, terahertz, Telecommunication, TK5101-6720, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4
Abstract

This paper gives an overall picture from BiCMOS technologies up to THz systems integration, which were developed in the European Research project TARANTO. The European high performance BiCMOS technology platforms are presented, which have special advantages for addressing applications in the submillimeter-wave and THz range. The status of the technology process is reviewed and the integration challenges are examined. A detailed discussion on millimeter-wave characterization and modeling is given with emphasis on harmonic distortion analysis, power and noise figure measurements up to 190 GHz and 325 GHz respectively and S-parameter measurements up to 500 GHz. The results of electrical compact models of active (HBTs) and passive components are presented together with benchmark circuit blocks for model verification. BiCMOS-enabled systems and applications with focus on future wireless communication systems and high-speed optical transmission systems up to resulting net data rates of 1.55 Tbit/s are presented.

Published
2021
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3. Substrate Engineering of Inductors on SOI for Improvement of Q-Factor and Application in LNA

Author

Arun Bhaskar, Justine Philippe, Vanessa Avramovic, Flavie Braud, Jean-Francois Robillard, Cedric Durand, Daniel Gloria, Christophe Gaquiere, and Emmanuel Dubois

Subjects
CMOS, SOI, membranes, laser processing, inductors, LNA, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
Abstract

High Q-factor inductors are critical in designing high performance RF/microwave circuits on SOI technology. Substrate losses is a key limiting factor when designing inductors with high Q-factors. In this context, we report a substrate engineering method that enables improvement of quality factors of already fabricated inductors on SOI. A novel femtosecond laser milling process is utilized for the fabrication of locally suspended membranes of inductors with handler silicon completely etched. Such flexible membranes suspended freely on the BOX show up to 92 % improvement in Q-factor for single turn inductor. The improvement in Q-factor is reported on large sized inductors due to reduced parallel capacitance which allows enhanced operation of inductors at high frequencies. A compact model extraction methodology has been developed to model inductor membranes. These membranes have been utilized for the improvement of noise performance of LNA working in the 4.9 - 5.9 GHz range. A 0.1 dB improvement in noise figure has been reported by taking an existing design and suspending the input side inductors of the LNA circuit. The substrate engineering method reported in this work is not only applicable to inductors but also to active circuits, making it a powerful tool for enhancement of RF devices.

Published
2020
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4. An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology

Author

Mohammad Abdul Alim, Christophe Gaquiere, and Giovanni Crupi

Subjects
gallium nitride (GaN), high electron-mobility transistor (HEMT), equivalent-circuit modeling, microwave frequency, scattering-parameter measurements, temperature, Mechanical engineering and machinery, TJ1-1570
Abstract

Presently, growing attention is being given to the analysis of the impact of the ambient temperature on the GaN HEMT performance. The present article is aimed at investigating both DC and microwave characteristics of a GaN-based HEMT versus the ambient temperature using measured data, an equivalent-circuit model, and a sensitivity-based analysis. The tested device is a 0.15-μm ultra-short gate-length AlGaN/GaN HEMT with a gate width of 200 μm. The interdigitated layout of this device is based on four fingers, each with a length of 50 μm. The scattering parameters are measured from 45 MHz to 50 GHz with the ambient temperature varied from −40 °C to 150 °C. A systematic study of the temperature-dependent performance is carried out by means of a sensitivity-based analysis. The achieved findings show that by the heating the transistor, the DC and microwave performance are degraded, due to the degradation in the electron transport properties.

Published
2021
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5. Effect of different separation frequencies of the two-tone input signal on the output power of GaN on SiC HEMT

Author

Mohammad Abdul Alim, Mayahsa M. Ali, Christophe Gaquiere, University of Chittagong, Bangladesh, Puissance - IEMN (PUISSANCE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and The authors would like to acknowledge 'CU research grant (2022–2023)' for their partial financial support in this work.

Subjects
Biomaterials, [PHYS]Physics [physics], [SPI]Engineering Sciences [physics], HEMTs, Separation frequency, Linear and nonlinear characteristics, Two-tone input signals, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, GaN
Abstract

International audience; This research aims to determine whether a GaN HEMT device made on SiC substrate has a memory effect. To accomplish this, the intermodulation distortion technique with the separation frequency (Δf) of the two-tone input signals was applied at three different frequency levels, one at f1 = 53 MHz and the other two at f1 = 3.6 GHz and 7 GHz, with a varying range of a few megahertz of 1, 5, and 10 MHz. For this, the 0.15 × (4 × 50) μm2 GaN HEMT was chosen due to its favourable DC and RF figures of merit. The effect of the separation frequencies on the fundamental, IMD2 and IMD3 output powers are demonstrated. The findings show a significant effect of the separation frequency (Δf) on the output power and the nonlinear products within this frequency range.

Published
2023

6. A study of DC and RF transconductance for different technologies of HEMT at low and high temperatures

Author

Mohammad Abdul Alim, Anwar Jarndal, Christophe Gaquiere, Giovanni Crupi, University of Chittagong, Bangladesh, University of Sharjah (UoS), Puissance - IEMN (PUISSANCE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), University of Messina, and FundingThe authors declare that no funds, grants, or othersupport were received during the preparation of thismanuscript.

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials
Abstract

International audience; AbstractWe report on the measured effects of temperature on the DC and RF transconductance for several important HEMT technologies. Six different HEMT transistors were evaluated. Single- and double-heterojunction HEMTs, GaAs and GaN materials, virgin and multi-layer pHEMTs, and matched and pseudomorphic HEMTs are analyzed to enable a comparative and quantitative analysis for various transistor types. The temperature effects on the HEMT behavior vary remarkably with the considered transistor technology and working conditions. As a matter of fact, by changing the transistor and bias point, a higher temperature can yield an increase or decrease in the transconductance. It is worth noting that GaAs transistors have a bias point where the DC and RF transconductances are nearly invariant with temperature, owing to two opposing temperature effects canceling each other out, while no such bias condition was found for the GaN-based transistors.

Published
2023

7. Modeling of access resistances and channel temperature estimation for GaN HEMT

Author

Shariful Islam, Mohammad Abdul Alim, Abu Zahed Chowdhury, Christophe Gaquiere, University of Chittagong, Bangladesh, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Puissance - IEMN (PUISSANCE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and The authors would like to acknowledge 'CU research grant (2020-2021)' for their partial financial support in this work.

Subjects
[SPI]Engineering Sciences [physics], GaN HEMTs, Access resistances, Measurements, Modeling, Channel temperature, Thermal resistance, Physical and Theoretical Chemistry, Condensed Matter Physics
Abstract

International audience; Accurate prediction of resistances at the transistor’s access zone and their temperature dependency are very important, since the current flow to the device depends on that region. In this paper, we have modeled the access resistances and have verified their temperature dependency with the experimental results in the case of a 0.25 μm gate GaN HEMT. At first, the carrier concentration profile and its mobility associated with the two-dimensional electron gas (2-DEG) were evaluated to model these resistances. Also, we have measured the threshold voltage and have studied its temperature dependence in this estimation process. Apart from that, thermal resistance and its change with temperature were investigated, as it is an important factor in describing the 2-DEG transport mechanism. We also estimated the variation of channel temperature for nine different temperatures (from 233 to 423 K) and validated the output with the measured data. The studied results can be used for the prediction of GaN HEMTs characteristics with temperature variation and can be included in the simulation packages.

Published
2022

8. Breakdown mechanism of AlGaN/GaN HEMT on 200-mm silicon substrate with silicon implant-assisted contacts

Author

Antoine Chanuel, Yveline Gobil, Chuan Lun Hsu, Matthew Charles, Marianne Coig, Jerome Biscarrat, Francois Aussenac, Nicolas Defrance, Christophe Gaquiere, Fred Gaillard, Erwan Morvan, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Puissance - IEMN (PUISSANCE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), The authors acknowledge the CEA-LETI cleanroom platform for process support. This work was supported by the Electronic Componentsand Systems for European Leadership (ECSEL) Joint Undertaking (JU) under Agreement 783274, project 5G GaN2, and in part by the FrenchArmed Forces Ministry through the Agence Innovation Défense. The JU receives support from the European Union’s Horizon 2020 Research andInnovation Program and France, Germany, Slovakia, The Netherlands, Sweden, Italy, Luxembourg, and Ireland, PCMP CHOP, and European Project: 783274,H2020,H2020-ECSEL-2017-2-RIA-two-stage,5G_GaN2(2018)

Subjects
[SPI]Engineering Sciences [physics], Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
Abstract

International audience; We present an access technology suitable for scaled gallium nitride (GaN) high electron mobility transistor (HEMT) in Ka -band. The comparison between OFF-state characteristics of a silicon implant-assisted contact and a conventional recessed Ti/Al-based Ohmic contact is presented. The transistor with source/drain extension by Si implantation has a low contact resistance with RC down to 0.4 Ω⋅mm and a sheet resistance of the implanted layer of 67 Ω /sq. In addition to promising contact performance, transistors with source and drain extension sustain high breakdown voltage (BV) with short dimensions for high-frequency applications. The systematic study of gate–source, gate–drain, and gate length variations shows a new breakdown mechanism for implanted access technology with current flowing beneath the channel leading to an unusual correlation between source–drain spacing and BV. With a conventional titanium-alloyed contact, a punchthrough effect is responsible for the BV. Cross-sectional transmission electron microscopy and secondary ion mass spectroscopy (SIMS) characterizations on both wafers highlight a degradation of the AlGaN-based back-barrier and a high silicon concentration deep into the epitaxial stack on the implanted wafers indicating a way to improve BV with an adapted process flow.

Published
2022

9. mm-Wave Through-Load Element for On-Wafer Measurement Applications

Author

Sylvie Lepilliet, Philippe Ferrari, Loic Vincent, Christophe Gaquiere, Olivier Occello, Emmanuel Pistono, Abdelhalim A. Saadi, Marc Margalef-Rovira, Vanessa Avramovic, Manuel J. Barragan, Sylvain Bourdel, Puissance - IEMN (PUISSANCE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), NXP Semiconductors [France], Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centre Interuniversitaire de Micro-Electronique (CIME), Institut National Polytechnique de Grenoble (INPG), Reliable RF and Mixed-signal Systems (TIMA-RMS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), PCMP CHOP, European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and Reliable RF and Mixed-signal Systems (RMS )

Subjects
Through-load, transfer-switch millimeter-wave, attenuator, 02 engineering and technology, BiCMOS, law.invention, law, 0202 electrical engineering, electronic engineering, information engineering, Insertion loss, slow-wave, Electrical and Electronic Engineering, Physics, Attenuator (electronics), on-wafer, business.industry, 020208 electrical & electronic engineering, Bandwidth (signal processing), Transistor, Electrical engineering, Transfer switch, 3-dB coupler, [SPI.TRON]Engineering Sciences [physics]/Electronics, Return loss, business, Voltage
Abstract

This paper presents an innovative Through-Load element aimed at characterization applications at mm-wave frequencies. The proposed structure can behave as a Through connection or as a 50- $\Omega $ load depending on a DC control voltage. Among other potential applications, this system can be used to implement a transfer switch or an attenuator. A demonstrator was fabricated and measured in the STM 55-nm BiCMOS technology. Over a wide bandwidth, from 55 GHz up to 170 GHz, experimental measurements demonstrate a maximum 1.6-dB of insertion loss when behaving as a Through connection and a minimum 14-dB of insertion loss when behaving as a 50- $\Omega $ load. In both cases, the return loss is better than 10 dB. The insertion loss at 90 GHz is 0.6 dB for the Through connection and 20 dB for the 50- $\Omega $ load connection.

Published
2021

12. Millimeter-Wave Phased Arrays and Over-the-Air Characterization for 5G and Beyond: Overview on 5G mm-Wave Phased Arrays and OTA Characterization

Author

Mattia Maggi, Syrine Hidri, Loic Marnat, Mauro Ettorre, Gerardo Orozco, Marc Margalef-Rovira, Christophe Gaquiere, Kamel Haddadi, Institut d'Électronique et des Technologies du numéRique (IETR), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Nantes Université - pôle Sciences et technologie, Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), MC2-Technologies, Puissance - IEMN (PUISSANCE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN ), and no information

Subjects
Scattering, [SPI]Engineering Sciences [physics], Radiation, Millimeter wave technology, 5G mobile communication, Radar antennas, Phased arrays, Wireless communication, Electrical and Electronic Engineering, Millimeter wave radar, Condensed Matter Physics
Abstract

International audience; Millimeter-wave (mm-wave) technology is a viable candidate to address the growing data traffic in 5G wireless communication and beyond. However, challenges related to free-space propagation loss, atmospheric absorption, scattering, and nonline-of-sight propagation must be addressed to benefit from the promised bandwidth available in the mm-wave regime. In this context, phased-array technology is considered vital to provide high-speed and seamless wireless solutions to the industry. A phased array can be defined as a multiple-antenna system that electronically controls the radiated electromagnetic (EM) beam. The official origin of the antenna array concept is attributed to Guglielmo Marconi. A repeated Morse code signal letter “S” from Poldhu, United Kingdom to St. John’s in Canada was successfully demonstrated in December 1901, using a two-element antenna array. In the early 1940s, Luis Walter Alvarez designed the first electronically scanning phased-array radar. Both scientists were awarded the Nobel Prize for their discovery.

Published
2022

13. Noise Figure Modeling Subject to Frequency and Temperature for AlGaN/GaN HEMTs

Author

Mohammad Abdul Alim, Ali A. Rezazadeh, Christophe Gaquiere, University of Chittagong, Bangladesh, University of Manchester [Manchester], Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Puissance - IEMN (PUISSANCE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and no information

Subjects
[SPI]Engineering Sciences [physics]
Abstract

International audience; The microwave noise Figure modelling for AlGaN/GaN HEMTs is shown in this study over a large range of temperatures e.g., -40 to 150°C. Standard noise parameters for example minimum noise Figure NFmin), normalized noise equivalent resistance Rs, and association gain Ga were modelled at various frequencies and temperatures. The temperature coefficients of noise-related equivalent circuit parameters (ECPs) were also determined. The noise parameters of GaN on SiC based HEMTs are considered to be analogous to GaN HEMTs on Si, sapphire, and diamond substrates, as well as InP- and GaAs HEMTs. According to the findings, GaN/SiC HEMTs offer a lot of potential for applications requiring LNAs at high temperatures.

Published
2022

14. Measurement-based Investigation of the DC and RF Transconductance for Various HEMT Technologies in High-and Low-temperature Conditions

Author

Christophe Gaquiere, Mohammad A. Alim, Giovanni Crupi, Anwar Jarndal, Puissance - IEMN (PUISSANCE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and University of Messina

Subjects
Materials science, business.industry, Transconductance, GaAs, temperature, High-electron-mobility transistor, GaN, multi-finger, [SPI]Engineering Sciences [physics], transconductance, Optoelectronics, multi-bias, business, HEMT
Abstract

The purpose of this experimental study is to evaluate quantitatively the impact of the temperature on the behavior of various high electron-mobility transistor (HEMT) technologies through the analysis of the DC and RF transconductance. The experimental data are reported for six different HEMT devices, in order to develop a comparative analysis based on various technologies, including gallium arsenide (GaAs) and gallium nitride (GaN) materials, matched and pseudomorphic HEMTs, single- (S-H) and double-heterojunction (D-H) HEMTs, and both virgin and multi-layer devices. The reported findings show that the impact of the ambient temperature on the HEMT behavior strongly depend on the tested technology and operating conditions. As a matter of fact, a higher temperature can lead to increased or degraded transconductance, depending on the device technologies and bias point. In the GaAs-based devices, an operating bias condition at which the DC and RF transconductance are temperature insensitive can be defined, owing to two-opposite temperature-dependent effects counteracting with each other.

Published
2022

15. Performance Projection of GaN HEMT: Bias and Temperature Dependent Study of 3rd-Order Intermodulation Distortion

Author

Mohammad A. Alim, I. Jahan, Mayahsa M. Ali, Christophe Gaquiere, Chittagong University of Engineering and Technology, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and The authors would like to acknowledge 'CU research grant (2020-2021)' for their partial financial support in this work

Subjects
[SPI]Engineering Sciences [physics], transconductance, GaN HEMT, temperature, nonlinearity, analytical model, two-tone measurement
Abstract

International audience; The third-order intermodulation distortion in AlGaN/GaN high electron mobility transistors fabricated on SiC substrate for power amplifier applications is reported in this study as a function of bias and temperature. The nonlinearity of active devices in terms of frequency and input power was demonstrated using two-tone intermodulation distortion measurements with a wide bias and temperature range. It is shown that the second derivatives of RF transconductance (Gm3) determined from two-tone measurements are directly related to the third-order intermodulation distortion (IMD) components. Furthermore, the third-order intermodulation distortion power was found to be minimum at the value of Gm3 is zero. An empirical analytical model for the nonlinearity of this device based on two-tone technique has been developed to highlight the influence of RF transconductance. The modelled data are shown to be consistent with measurement results giving a useful tool for studying these devices.

Published
2021

16. Experimental Investigation on the Bias and Temperature Dependence of the Forward Transmission Coefficient for HEMT Technologies

Author

Christophe Gaquiere, Giovanni Crupi, Mohammad A. Alim, Puissance - IEMN (PUISSANCE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), University of Messina, and no information

Subjects
[SPI]Engineering Sciences [physics], Materials science, business.industry, Scattering-parameter measurements, Optoelectronics, Ambient temperature, Bias condition, Forward transmission coefficient, HEMT, High-electron-mobility transistor, Transmission coefficient, business
Abstract

International audience; The goal of this research is to look at the effects of temperature on the forward transmission coefficient (S 21 ) of high electron-mobility transistors (HEMTs), employing various technologies. The analysis is carried out on six different devices under different bias conditions with the ambient temperature varied from -40°C to 150°C. The low-frequency magnitude of S 21 is significantly reduced in GaN-based HEMTs when the temperature is increased. On the other hand, an operating bias point where this magnitude is temperature insensitive has been identified in GaAs-based HEMTs.

Published
2021

17. Design of coupled slow-wave CPW millimeter-wave bandpass filter beyond 100 GHz in 55-nm BiCMOS technology

Author

Marc Margalef-Rovira, Olivier Occello, Christophe Gaquiere, Loic Vincent, Sylvie Lepilliet, Abdelhalim A. Saadi, Philippe Ferrari, NXP Semiconductors [France], Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Centre Interuniversitaire de Micro-Electronique (CIME), Institut National Polytechnique de Grenoble (INPG), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Puissance - IEMN (PUISSANCE - IEMN), PCMP CHOP, European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
010302 applied physics, Materials science, business.industry, Flatness (systems theory), Topology (electrical circuits), Stopband, Filter (signal processing), STRIPS, 01 natural sciences, Microstrip, Electronic, Optical and Magnetic Materials, law.invention, [SPI]Engineering Sciences [physics], Band-pass filter, law, 0103 physical sciences, Extremely high frequency, Optoelectronics, Electrical and Electronic Engineering, business
Abstract

International audience; The design and experimental results of millimeter-wave bandpass filters (BPFs) implemented in 55-nm BiCMOS technology and operating around 120 GHz are presented in this article. Slightly modified coupled line filters' structures are used in the designs. It allows generating the transmission zero at the upper stopband, leading to the selectivity of enhanced filters. The coupled line structure is implemented in two technologies, microstrip coupled lines and coupled slow-wave (SW) coplanar waveguides (CS-CPWs). The latter shows more design flexibility, allowing to reach a better filtering performance than the microstrip filters, i.e., better in-band flatness and higher selectivity. Good agreement is achieved between simulation, modeling, and measurement results. Also, the overall length of the filter based on CS-CPWs is smaller as compared to the filters based on the microstrip lines, thanks to the SW propagation.

Published
2021

18. Estimation of channel temperature and thermal sensitivity for a 0.15 μm GaN HEMT

Author

Shariful Islam, Christophe Gaquiere, Mohammad A. Alim, Abu Zahed Chowdhury, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
010302 applied physics, Materials science, business.industry, Thermal resistance, 02 engineering and technology, High-electron-mobility transistor, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Signal, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, [SPI]Engineering Sciences [physics], Pulse measurement, 0103 physical sciences, Thermal, Optoelectronics, Sensitivity (control systems), Electrical and Electronic Engineering, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Communication channel
Abstract

In this paper, we have investigated the channel temperature and thermal sensitivity for a 0.15 μm gate GaN HEMT at nine different temperatures from 233 K to 423 K. The estimation of channel temperature has been accomplished by means of DC and pulse measurement and it was later well verified with modelled data. Using that measured and theoretical data, the thermal resistance for the device is also estimated and compared with those published in open literature. The investigation was further extended to study the thermal-sensitivity of the DC and small signal parameters by means of on-wafer measurement in relation to room temperature. Temperature has a variety of effects based on the selected operating condition, the bias point is selected to achieve highest gain in the case of intrinsic parameters. As will be shown, different trends are observed for the extrinsic and intrinsic parameters but the temperature has a greater impact on the resistances.

Published
2021

19. Bias-dependence of surface charge at low temperature in GaN self-switching diodes

Author

Ignacio Iniguez-de-la-Torre, Christophe Gaquiere, E. Perez-Martin, J. Mateos, Tomas Gonzalez, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Ministerio de Economía y Competitividad, MINECO, Ministerio de Ciencia e Innovación, MICINN, European Regional Development Fund, ERDF: TEC2017-83910-R, Junta de Castilla y León: SA254P18, Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
Work (thermodynamics), Self-switching diodes, Materials science, Condensed matter physics, surface effects, Monte Carlo method, Charge density, Heterojunction, Gallium nitride, Self-Switching Diode, 7. Clean energy, chemistry.chemical_compound, Gallium Nitride, [SPI]Engineering Sciences [physics], chemistry, Surface effects, Surface charge, Constant (mathematics), Monte Carlo simulation, Diode
Abstract

[EN]In this work, with the help of a semi-classical twodimensional Monte Carlo (MC) simulator, we study the DC current-voltage curves of Self-Switching Diodes (SSDs) fabricated on an AlGaN/GaN heterostructure from 100 K up to room temperature. Due to the very narrow channel of the SSDs, the presence of surface effects plays a key role not only on their DC behavior but also on their RF detection performance. The evolution with temperature of the negative surface charge density σ at the etched sidewalls of the SSD is the key quantity to explain the measurements. At 300 K, MC simulations with a constant value of σ are able to replicate very satisfactorily the experiments. However, to reproduce the shape of the I-V curve at low temperatures, a more realistic approach, where σ depends not only on T, but also on the applied bias V, is necessary., Spanish MINECO and FEDER through project TEC2017-83910-R and Junta de Castilla y León and FEDER through project SA254P18

Published
2021

20. Neutron Irradiation Effects on the Electrical Properties of Previously Electrically Stressed AlInN/GaN HEMTs

Author

Christophe Gaquiere, P. Mary, Yannick Guhel, Bertrand Boudart, S. Petitdidier, J. L. Trolet, Equipe Electronique - Laboratoire GREYC - UMR6072, Groupe de Recherche en Informatique, Image et Instrumentation de Caen (GREYC), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU), Ecole des applications militaires de l'énergie atomique (EAMEA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS), and Guhel, Yannick

Subjects
Nuclear and High Energy Physics, Materials science, [SPI] Engineering Sciences [physics], Radiation effects, Electron, Stress, 01 natural sciences, Fluence, Stress (mechanics), [SPI]Engineering Sciences [physics], Electrical stress, 0103 physical sciences, Neutron, Irradiation, Electrical and Electronic Engineering, Neutron irradiation, Drain current, ComputingMilieux_MISCELLANEOUS, Neutrons, [PHYS]Physics [physics], HEMTs, 010308 nuclear & particles physics, business.industry, MODFETs, Neutron radiation, Reliability, AlInN/GaN HEMTs, Nuclear Energy and Engineering, Thermal stresses, Optoelectronics, Electron traps, Neutron irradiation effects, business
Abstract

This paper analyses the neutron irradiation impact on the electrical performances of unstressed, ON-state, OFF-state, and negative gate bias (NGB) stressed AlInN/GaN HEMTs. These irradiations have resulted in the creation of electron traps that are causing a decrease in the drain current and an increase in the access resistance of the unstressed, ON-state, or OFF-state stressed AlInN/GaN devices. These degradations have been correlated with gamma spectrometry measurements and transmutation reactions occurred during the thermalized neutron irradiation have been highlighted. Despite these phenomena, a rise in drain current and a reduction in access resistance have been observed when NGB stressed AlInN/GaN HEMTs were irradiated with a fluence of $1.2\times 10^{\mathbf {12}}$ neutrons/cm2. The differences between the electrical behaviors of unstressed, ON-state, OFF-state, and NGB stressed devices observed after the neutron bombardment are related to the presence of electron traps in these device structures.

Published
2019

21. Temperature-sensitivity of two microwave HEMT devices: AlGaAs/GaAs vs. AlGaN/GaN heterostructures

Author

Giovanni Crupi, Abu Zahed Chowdhury, Mohammad A. Alim, Shariful Islam, Christophe Gaquiere, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), University of Messina, Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
Temperature sensitivity, Materials science, TK7800-8360, Computer Networks and Communications, 02 engineering and technology, High-electron-mobility transistor, 01 natural sciences, law.invention, GaN, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, 010302 applied physics, Temperature-sensitivity, High electron-mobility transistor (HEMT), business.industry, Scattering, Microwave performance, Transistor, GaAs, 020206 networking & telecommunications, Heterojunction, Algaas gaas, Hardware and Architecture, Control and Systems Engineering, Signal Processing, Heterostructure, Optoelectronics, Electronics, business, Sensitivity (electronics), Microwave
Abstract

International audience; The goal of this paper is to provide a comparative analysis of the thermal impact on the microwave performance of high electron-mobility transistors (HEMTs) based on GaAs and GaN technologies. To accomplish this challenging goal, the relative sensitivity of the microwave performance to changes in the ambient temperature is determined by using scattering parameter measurements and the corresponding equivalent-circuit models. The studied devices are two HEMTs with the same gate width of 200 µm but fabricated using different semiconductor materials: GaAs and GaN technologies. The investigation is performed under both cooled and heated conditions, by varying the temperature from −40 °C to 150 °C. Although the impact of the temperature strongly depends on the selected operating condition, the bias point is chosen in order to enable, as much as possible, a fair comparison between the two different technologies. As will be shown, quite similar trends are observed for the two different technologies, but the impact of the temperature is more pronounced in the GaN device.

Published
2021

22. Coplanar waveguides on BCB measured up to 760 GHz

Author

Frédéric Aniel, W. Aouimeur, A.-S. Grimault-Jacquin, Guillaume Ducournau, Nicolas Zerounian, Christophe Gaquiere, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Puissance - IEMN (PUISSANCE - IEMN), Renatech Network, Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and ANR-16-CE24-0031,Terapacipode,Démonstration de circuits passifs sur Polymère dans la gamme THz(2016)

Subjects
Transmission lines, Materials science, THz coplanar waveguides, Terahertz radiation, General Physics and Astronomy, 02 engineering and technology, 01 natural sciences, 7. Clean energy, [SPI]Engineering Sciences [physics], submillimeter scattering parameters, electromagnetic modeling, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Calibration, Electrical and Electronic Engineering, Monolithic microwave integrated circuit, 010302 applied physics, chemistry.chemical_classification, Polymer dielectric, business.industry, submillimeter wave waveguides, 020206 networking & telecommunications, Polymer, Electronic, Optical and Magnetic Materials, Electric power transmission, chemistry, Optoelectronics, Computational electromagnetics, business, polymer dielectric
Abstract

International audience; The integrated THz pattern over any MMIC appears to be a good opportunity to enclose calibration kit suitable for accurate measurements. An original technology based on polymer has been developed. Sub-millimeter single-mode conductor-backed coplanar waveguides using benzocyclobutene polymer and interconnecting via between ground planes are processed and measured up to 760 GHz. The experimental performances show good agreement with analytical and numerical modeling. A two-tier Thru-Reflect-Line correction and a square root of Thru de-embedding are applied to extract the attenuation factor of about 3 dB/mm at 600 GHz, the relative phase velocity to light of about 0.716 and the characteristic impedance around 50 Ω. The fundamental propagating mode remains unique in this wide frequency range, enabling this technological to be integrated over existing circuit for THz applications. The loss performance of the coplanar waveguide ranges in the state-of-the-art opening the road for fully integrated THz circuits.

Published
2021

23. Design of zero bias power detectors towards power consumption optimization in 5G devices

Author

Daniel Gloria, Sylvie Lepilliet, Haitham Ghanem, Christophe Gaquiere, Issa Alaji, Etienne Okada, Guillaume Ducournau, W. Aouimeur, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), STMicroelectronics [Crolles] (ST-CROLLES), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), Puissance - IEMN (PUISSANCE - IEMN), European Metrology Programme for Innovation and Research, EMPIR, This research work is carried in the framework of the 16ENG06 ADVENT project which is supported by the European Metrology Programme for Innovation and Research (EMPIR). The EMPIR initiative is co-funded by the European’s Horizon 2020 research and innovation programme and the EMPIR Participating States., PCMP CHOP, and Laboratoire commun STMicroelectronics-IEMN T1

Subjects
02 engineering and technology, 01 natural sciences, law.invention, law, 0103 physical sciences, MOSFET, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Microelectronics, NMOS logic, Electronic circuit, 010302 applied physics, Physics, [PHYS]Physics [physics], Dynamic range, 55-nm BiCMOS, business.industry, 020208 electrical & electronic engineering, Detector, Transistor, General Engineering, Zero bias detector, 5G and IoT sensors, NEP, business, Voltage
Abstract

International audience; This paper presents the design and characterization of zero bias power detectors, based on MOSFET transistors, integrated in SiGe 55-nm BiCMOS technology from ST-Microelectronics. The working frequency bands of the circuits are located in the range (38–55) GHz, dedicated to optimize the power consumption in 5G devices. Three NMOS categories available in the technology are used (GP, LP, HPA), the aim is to design several detectors based on different NMOS categories in order to compare their performances. In addition, a detector based on a stack of 6 LP transistors is designed in order to increase the dynamic range. Compared to recent works, the HPA detector exhibits a very good performance with very low noise equivalent power value (NEP) 3.8 pW/Hz and large dynamic range of 67 ​dB. The extracted voltage sensitivity values of these detectors are between (850–1400) V/W showing good agreements with the simulation results. © 2021 Elsevier Ltd

Published
2021

24. Design and characterization of (140-220) GHz frequency compensated power detector

Author

Guillaume Ducournau, Sylvie Lepilliet, Christophe Gaquiere, Daniel Gloria, Issa Alaji, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), STMicroelectronics [Crolles] (ST-CROLLES), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), Puissance - IEMN (PUISSANCE - IEMN), European Metrology Program for Innovation and Research (EMPIR) in the framework of the ADVENT Project, PCMP CHOP, Laboratoire commun STMicroelectronics-IEMN T1, and Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
Physics, Attenuator (electronics), frequency compensated, Radiation, 55-nm BiCMOS, G-band, business.industry, Frequency band, Detector, Broadband power detector (PD), 020206 networking & telecommunications, High voltage, 02 engineering and technology, Condensed Matter Physics, [SPI]Engineering Sciences [physics], G band, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Electrical and Electronic Engineering, business, Sensitivity (electronics), Electrical impedance, diode-connected NMOS transistor, NMOS logic
Abstract

International audience; This article presents the design and characterization of a real-time frequency-compensated power detector (PD), based on NMOS transistor, integrated in SiGe 55-nm BiCMOS technology from STMicroelectronics, and dedicated to on-chip power detection in the G-band frequencies. An innovative simple circuit (named attenuator) is designed in order to compensate the variation of the voltage sensitivity value with frequency, which is established by exhibiting lower attenuation (smaller real part impedance) at higher frequencies. As a result, the measured sensitivity value is compensated with a small variation (1800 V/W±10%) over the frequency band (140-220) GHz. To the best of the authors' knowledge, this detector is the first design which proposes a real-time frequency compensation at such high- and large-frequency bands. The attenuator was also designed to exhibit an inductive impedance (in the G-band) in order to compensate the capacitive effect of the NMOS, which helps to use smaller NMOS size and, therefore, obtain a higher sensitivity value. Compared to recent works, our detector exhibits a performance belong the current state-of-the-art with a very low noise equivalent power (NEP) value 4.56 pW/ √Hz and a relatively high voltage sensitivity value.

Published
2021

25. Design of tunable power detector towards 5G applications

Author

W. Aouimeur, Haitham Ghanem, Daniel Gloria, Guillaume Ducournau, Etienne Okada, Christophe Gaquiere, Sylvie Lepilliet, Issa Alaji, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), STMicroelectronics [Crolles] (ST-CROLLES), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), Puissance - IEMN (PUISSANCE - IEMN), This research work is carried in the framework of the 16ENG06 ADVENT project which is supported by the European Metrology Program for Innovation and Research (EMPIR)., PCMP CHOP, Laboratoire commun STMicroelectronics-IEMN T1, Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
Physics, business.industry, 020208 electrical & electronic engineering, 020206 networking & telecommunications, 02 engineering and technology, Condensed Matter Physics, 7. Clean energy, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, [SPI]Engineering Sciences [physics], Power detector, Extremely high frequency, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Electrical and Electronic Engineering, business, 5G, Pn diode
Abstract

International audience; This paper presents the design and characterization of two tunable power detectors, based on PN diodes, integrated in SiGe 55 nm BiCMOS technology from ST-Microelectronics. The working frequency band of the circuits is (35-50) GHz dedicated for 5G applications. The detector parameters are adjusted by controlling the biasing current, this characteristic makes them suitable to be utilized in different 5G applications. Two different diode sizes are used (L1N1, L2N5) in order to compare their performances. For three values of biasing current, the extracted voltage sensitivity values are between (700-1400) V/W for L1N1 and (500-1150) V/W for L2N5 showing the agreement with the simulation. Comparing to recent works, our designs exhibit very low power consumption (down to 60 nW) with relatively high sensitivity values. A targeted sensitivity value can be obtained with lower power consumption using larger diode size.

Published
2021

26. Key Enabling Technologies for Future Wireless, Wired, Optical and Satcom Applications

Author

Björn Debaillie, Philippe Ferrari, Didier Belot, François Brunier, Christophe Gaquiere, Pierre Busson, Urtė Steikūnienė, Björn Debaillie, Philippe Ferrari, Didier Belot, François Brunier, Christophe Gaquiere, Pierre Busson, and Urtė Steikūnienė

Abstract

This book presents the latest research roadmaps and achievements from the European ecosystem (industry, research, and academia) driving the development of future wireless, wired, optical and satcom applications utilising the mm-wave and sub-THz bands. It covers the entire value chain, including technologies, devices, characterisation, architectures, circuits, 3D heterogeneous integration and packaging.As the interconnectedness of our world continues to expand, the importance of global innovation in communication systems and technologies grows significantly. The increasing reliance on digital communication necessitates systems that can manage higher data traffic, provide faster and more reliable connectivity, and sustainably support a diverse range of applications. Achieving these goals requires a shift towards higher frequency bands (mm-wave and sub-THz) and the adoption of disruptive technologies. Heterogeneous integration of (Bi)CMOS, SOI, and III/V components such as GaN or InP, along with advanced packaging techniques, is essential to realise ubiquitous, ultra-high bandwidth, and low latency networks. To ensure that future communication systems are not only technologically advanced but also sustainable and responsible, it is crucial to minimize their environmental impact by considering the materials used, manufacturing processes, operational efficiency, and recyclability.The book captures the synergetic interactions between European Chips JU projects SHIFT and Move2THz, the European 3D heterogenous integration and packaging community and the MTT-TC9 society. These interactions were forged during the International Workshop on'Key Enabling Technologies for Future Wireless, Wired, Optical and Satcom Applications'at the European Microwave Week in Paris, France, on 22 September, 2024.Whether you are a professional in the field or simply interested in the future of communication technologies, this book offers invaluable insights into the technological breakthroughs shaping our digital future.The Open Access version of this book, available at http://www.taylorfrancis.com, has been made available under a Creative Commons Attribution-Non Commercial (CC-BY-NC) 4.0 license.

Published
2024

27. Experimental insight into the third-order intercepts and nonlinear distortion of GaN HEMTs

Author

Mohammad A. Alim, Christophe Gaquiere, Mayahsa M. Ali, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
Acoustics, 02 engineering and technology, 01 natural sciences, [SPI]Engineering Sciences [physics], order intercept, Distortion, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, characterization, Electrical and Electronic Engineering, thirdand#8208, Mathematics, 010302 applied physics, Third-order intercept point, nonlinear distortion, temperature, two GaN HEMTs, 020206 networking & telecommunications, Biasing, Computer Graphics and Computer-Aided Design, Computer Science Applications, Third order, IMD3, Nonlinear distortion, Antenna (radio), Intermodulation
Abstract

International audience; This research is about investigating the third-order intercept point (TOI) and nonlinear distortion level (NDL) for two GaN HEMTs of different gate lengths with temperature and frequency. As a multi-biasing, input power, frequency and temperature-dependent term; the TOI point and as well as the nonlinear distortion level are particular figures merit relevant to the third-order intermodulation distortion (IMD3) product. The primary results are the output referenced TOI reduced whereas the input referenced TOI raised as the frequency goes higher and the lower gated device exhibits a bit greater magnitude. Over the temperature range measured; the magnitude of TOI and nonlinear distortion considerably changed in accordance to the performance of third order intermodulation distortion (IMD3) component. This investigation of TOI is used to determine what extent distortion is generated, and comparing that to the entryway of the antenna provides a clear strategy for determining if the spec can be met or not. However, distortion level investigation is a critical point to choose the best biasing preference with the device's inlet measurements to establish a solution that fits with the intended usage.

Published
2021

28. 2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT

Author

Mohammad A. Alim, Christophe Gaquiere, Md. Abdul Kaium Khan, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
Materials science, Algan gan, 02 engineering and technology, High-electron-mobility transistor, 01 natural sciences, law.invention, [SPI]Engineering Sciences [physics], law, 2DEG, 0103 physical sciences, Electrical and Electronic Engineering, Conduction band, 010302 applied physics, business.industry, Transistor, GaN HEMT, Reduction rate, Temperature, Atmospheric temperature range, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Conduction band offset, Optoelectronics, Pseudomorphic GaN pHEMT, 0210 nano-technology, Fermi gas, business
Abstract

International audience; For the commercial implementation of GaN-based high electron mobility transistor (HEMT) and GaN-based pseudomorphic HEMT (pHEMT), the temperature dependency of the two-dimensional electron gas (2DEG) is crucial. Herein, the temperature dependency of 2DEG for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT has been analyzed theoretically and experimentally over the temperature range of ?40 °C to 150 °C. From the experimental and numerical data, a decreasing nature of 2DEG density is noticed for both the devices. The reduction rate in magnitude is higher for AlGaN/GaN HEMT compared to AlGaN/InGaN/GaN pHEMT. It is identified that the reduction of conduction band offset at higher temperatures is responsible for this decreasing nature. Incorporation of an extra 5 nm thick pseudomorphic layer of InGaN in AlGaN/InGaN/GaN pHEMT improves the 2DEG transport properties and enhances the overall transistor performance. Comparatively, the AlGaN/InGaN/GaN pHEMT is found to be exhibiting better 2DEG stability with temperature than AlGaN/GaN HEMT.

Published
2021

29. SiGe HBTs and BiCMOS technology for present and future millimeter-wave system: [Invited]

Author

Marc Margalef-Rovira, Haitham Ghanem, Fred Buchali, Holger Rucker, Pascal Chevalier, Rolf Schmid, Marina Deng, Tim Maiwald, Christophe Gaquiere, A. Mukherjee, Horst Hettrich, Thomas Zimmer, Josef Bock, Paulius Sakalas, Karsten Schuh, Karina Schneider, Michael Moller, Sebastien Fregonese, Wolfgang Templ, Bjorn Debaillie, Michael Collisi, Philippe Ferrari, Alper Karakuzulu, Caroline Maye, Akshay Visweswaran, Thomas Zwick, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Infineon Technologies, Nokia Bell Labs [Stuttgart], STMicroelectronics [Crolles] (ST-CROLLES), Saarland University [Saarbrücken], IMEC (IMEC), Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven), Université Grenoble Alpes (UGA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Micram Microelectronic GmbH, IHP - Leibniz-Institut für innovative Mikroelektronik, Friedrich–Alexander University Erlangen–Nürnberg (FAU), Technical University of Dresden, MDPI Corporation, National Center of Fundamental Sciences and Technology [Lithuania], Baltic Institute of Advanced Technology, Karlsruher Institut für Technologie (KIT), The research leading to these results has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement no. 737454, project 'TARANTO', Laboratoire commun STMicroelectronics-IEMN T1, PCMP CHOP, European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
Computer science, SiGe, high-speed optical transmission system, 02 engineering and technology, TK5101-6720, BiCMOS, Electric apparatus and materials. Electric circuits. Electric networks, Noise figure, terahertz, 020210 optoelectronics & photonics, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, high-frequency measurements, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, TK452-454.4, technologies, Total harmonic distortion, Heterojunction bipolar transistors (HBTs), wireless communication systems, business.industry, Emphasis (telecommunications), 020206 networking & telecommunications, modeling, Transmission system, millimeter wave, visual_art, Electronic component, visual_art.visual_art_medium, Telecommunication, System integration, Terabit, business
Abstract

International audience; This paper gives an overall picture from BiCMOS technologies up to THz systems integration, which were developed in the European Research project TARANTO. The European high performance BiCMOS technology platforms are presented, which have special advantages for addressing applications in the submillimeter-wave and THz range. The status of the technology process is reviewed and the integration challenges are examined. A detailed discussion on millimeter-wave characterization and modeling is given with emphasis on harmonic distortion analysis, power and noise figure measurements up to 190 GHz and 325 GHz respectively and S-parameter measurements up to 500 GHz. The results of electrical compact models of active (HBTs) and passive components are presented together with benchmark circuit blocks for model verification. BiCMOS-enabled systems and applications with focus on future wireless communication systems and high-speed optical transmission systems up to resulting net data rates of 1.55 Tbit/s are presented.

Published
2021
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30. Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence

Author

Ignacio Iniguez-de-la-Torre, E. Perez-Martin, Tomas Gonzalez, Christophe Gaquiere, J. Mateos, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), This work was partially supported by Spanish MINECO and FEDER through Project No. TEC2017-83910-R and the Junta de Castilla y León and FEDER through Project No. SA254P18. The Ph.D. contract of E. Pérez-Martín is financed by the Ministry of Science and Innovation (Ministry of Universities)., Universidad de Salamanca, Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)

Subjects
010302 applied physics, [PHYS]Physics [physics], Self-switching diodes, Materials science, Condensed matter physics, Monte Carlo method, Surface charge, General Physics and Astronomy, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, GaN, [SPI]Engineering Sciences [physics], 13. Climate action, 0103 physical sciences, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, Trapping effects, Monte Carlo simulation
Abstract

[EN]In this paper, the occupancy of sidewall surface states having a clear signature in the performance of AlGaN/GaN-based self-switching diodes (SSDs) is analyzed using a semi-classical Monte Carlo (MC) simulator in a wide temperature (T) range, from 100 to 300 K. Experimental I–V curves show an unusual current decrease at low temperature attributed to surface trapping. The dependence on T of the negative surface charge density σ at the etched sidewalls of the SSDs is essential to explain the measurements. Two devices with different widths (80 and 150 nm) have been characterized and simulated in detail paying especial attention to the modeling of the surface states. At room temperature, MC simulations with a position-independent value of σ are able to qualitatively reproduce the I–V curves. However, a more complex approach is required to correctly replicate the values and shape of the DC experimental curves at low temperature, below 220 K. An algorithm where σ depends not only on T but also on the applied bias V is proposed to successfully fit the current values at every bias point. The model is able to explain the physics of the unexpected dependence of the resistance with the channel width and the sign change in the bowing coefficient, the parameters that govern the detection capabilities of the diodes., Spanish MINECO and FEDER through Project No. TEC2017-83910-R and Junta de Castilla y León and FEDER through Project No. SA254P18

Published
2021

31. Mitigation of substrate coupling effects in RF switch by localized substrate removal using laser processing

Author

Emmanuel Dubois, Christophe GAQUIERE, Daniel GLORIA, Frédéric GIANESELLO, Cédric DURAND, Jean-Francois Robillard, Flavie BRAUD, Etienne OKADA, Justine PHILIPPE, Arun BHASKAR, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), STMicroelectronics [Crolles] (ST-CROLLES), Puissance - IEMN (PUISSANCE - IEMN), Laboratoire commun STMicroelectronics-IEMN T4, PIA EQUIPEX LEAF ANR-11-EQPX-0025, Renatech Network, PCMP CHOP, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and Laboratoire commun STMicroelectronics-IEMN T4ANR LEAF equipex PIA

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], SOI technology, Hardware_INTEGRATEDCIRCUITS, FOS: Physical sciences, Physics - Applied Physics, Hardware_PERFORMANCEANDRELIABILITY, Applied Physics (physics.app-ph), RF frontends, RF/Microwave circuits, T/R switch, Substrate engineering
Abstract

With the evolution of radio frequency (RF)/microwave technology, there is a demand for circuits which are able to meet highly challenging RF frontend specifications. Silicon-on-insulator (SOI) technology is one of the leading platforms for upcoming wireless generation. The degradation of performance due to substrate coupling is a key problem to address for telecommunication circuits, especially for the high throw count switches in RF frontends. In this context, a novel technique for local substrate removal is developed to fabricate membranes of mm-sized RF switch which allows for total etching of silicon handler. RF characterization of membranes reveal a superior linearity performance with lowering of 2nd harmonic by 17.7 dB and improvement in insertion losses by 0.38 dB in comparison with High-Resistivity SOI substrates. This improvement leads to a significant increase in frontend efficiency. These results demonstrate a new route for optimization of circuit performance using post-fabrication substrate processing techniques., Comment: 9 pages, 12 figures

Published
2021
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32. ESD mm-wave-circuit protection: 3-dB couplers

Author

Géraldine Pelletier, Christophe Gaquiere, Johan Bourgeat, Jean-Marc Duchamp, Sylvie Lepilliet, Vanessa Avramovic, Philippe Ferrari, Marc Margalef-Rovira, Manuel J. Barragan, Sylvain Bourdel, Emmanuel Pistono, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), STMicroelectronics [Crolles] (ST-CROLLES), Laboratoire de Génie Electrique de Grenoble (G2ELab ), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Reliable RF and Mixed-signal Systems (RMS ), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Puissance - IEMN (PUISSANCE - IEMN), European Union through Toward Advanced BiCMOS NanoTechnology Platforms for RF Applications TARANTO (Grant Number: ECSEL JU GA 737454), General Directorate for Enterprises DGA France, PCMP CHOP, Laboratoire commun STMicroelectronics-IEMN T1, European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and Reliable RF and Mixed-signal Systems (TIMA-RMS)

Subjects
ESD protection, BiCMOS, 01 natural sciences, 7. Clean energy, 0103 physical sciences, couplers, Insertion loss, slow-wave, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, Physics, Electrostatic discharge, business.industry, Attenuation, CMOS, Electrical engineering, mmwave, Electronic, Optical and Magnetic Materials, Human-body model, PACS 8542, Return loss, Node (circuits), business
Abstract

International audience; This article presents an innovative architecture for the implementation of an electrostatic discharge (ESD) protection for millimeter-wave (mm-wave) devices. The proposed architecture is based on the use of 3-dB couplers, whose coupled outputs have been shorted to the ground node. In order to reduce the physical dimensions of the 3-dB coupler and to reach the high coupling required for this application, the Coupled Slow wave CoPlanar Waveguides (CS-CPWs) architecture was favored. The demonstrator of the proposed system was fabricated in the STMicroelectronics 55-nm bipolar-cmos (BiCMOS) technology, demonstrating a return loss greater than 10 dB across the 50-160-GHz frequency range, an attenuation greater than 18 dB below 5 GHz, and a minimum insertion loss at 90 GHz of 0.55 dB. To prove the performance of the proposed solution, human body model (HBM) and charge device model (CDM) events were simulated at the input of the 3-dB coupler, showing that the proposed architecture effectively protects against these events while minimally impacting the RF path.

Published
2021

33. A fully-integrated high-isolation transfer switch for G-band in-situ reflectometer applications

Author

W. Aouimeur, Estelle Lauga-Larroze, Daniel Gloria, Jean-Daniel Arnould, Marc Margalef-Rovira, Issa Alaji, Christophe Gaquiere, Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Reliable RF and Mixed-signal Systems (TIMA-RMS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), STMicroelectronics [Crolles] (ST-CROLLES), Puissance - IEMN (PUISSANCE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), This work is supported by the project ANR-14-CE260027-BISCIG of the French National Research Agency (ANR). The authors wish to acknowledge Jose Moron Guerra from Asygn Grenoble, Alexandre Silligaris from CEA-Leti Grenoble and Sylvie Lepilliet from IEMN for their help in design and characterization., PCMP CHOP, Laboratoire commun STMicroelectronics-IEMN T1, ANR-14-CE26-0027,BISCIG,Caractérisation totalement intégrée en bande G(2014), Reliable RF and Mixed-signal Systems (RMS ), and Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
business.industry, Computer science, 020208 electrical & electronic engineering, Overhead (engineering), Electrical engineering, 020206 networking & telecommunications, Topology (electrical circuits), 02 engineering and technology, Transfer switch, BiCMOS, CMOS, Built-in self-test, G band, 0202 electrical engineering, electronic engineering, information engineering, Insertion loss, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business
Abstract

International audience; This paper describes two fully-integrated transfer switches designed for in-situ reflectometers and Built-In Self-Test applications (BIST) in the 140 to 220 GHz band (G-band). The proposed switches were designed in the STMicroelectronics 55-nm BiCMOS technology using the Single-Shunt and the Double-Shunt topology, respectively. In the 140 to 195 GHz frequency range, the Double-Shunt Transfer Switch shows an isolation between 27 and 46 dB, and an insertion loss between 5 and 7 dB. Compared to the Single-Shunt Transfer Switch, the double shunt switch presents a much better isolation while having a quite comparable insertion loss and area overhead. To the best of our knowledge, the proposed switches are the first fully integrated transfer switches in BiCMOS or CMOS technologies.

Published
2020

34. Miniaturization of Transmission Lines: Meandered Slow-wave CPWs

Author

Tadeu Mota-Frutuoso, Emmanuel Pistono, Manuel J. Barragan, Christophe Gaquiere, Marc Margalef-Rovira, Philippe Ferrari, Loic Vincent, Abdelhalim A. Saadi, Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Centre Interuniversitaire de Micro-Electronique (CIME), Institut National Polytechnique de Grenoble (INPG), Reliable RF and Mixed-signal Systems (TIMA-RMS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), This work has been funded by the European Union (ECSEL JU GA 737454: TowARds Advanced BiCMOS NanoTechnology platforms for RF applicatiOns -Taranto), and the General Directorate for Enterprises (DGE) in France., European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), and Reliable RF and Mixed-signal Systems (RMS )

Subjects
010302 applied physics, Materials science, business.industry, CPW, 020206 networking & telecommunications, Ranging, transmission line, 02 engineering and technology, Dielectric, 01 natural sciences, Microstrip, Electric power transmission, CMOS, Transmission line, Q factor, PACS 85.42, 0103 physical sciences, mm-wave, 0202 electrical engineering, electronic engineering, information engineering, Miniaturization, Optoelectronics, slow-wave, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business
Abstract

International audience; This work presents novel transmission line structures based on Meandered Slow-wave CoPlanar Waveguides (MS-CPWs), aiming to achieve high miniaturization. As a proof-of-concept, these two kinds of transmission lines were designed and fabricated in the AMS 0.35 mu m CMOS technology together with classical straight and meandered microstrip lines. Measurement results from 70 kHz to 100 GHz of the fabricated transmission lines are presented. At 80 GHz, all the considered transmission lines present similar quality factors, ranging between 10 and 14. On the other hand, at this frequency, one of the developed MS-CPW presents an effective dielectric constant of 88, while the meandered microstrip exhibits an equivalent effective dielectric constant of 51, thus leading to higher compactness for the MS-CPW.

Published
2020

35. Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

Author

V. J. Raposo, Christophe Gaquiere, E. Perez-Martin, Tomas Gonzalez, Ignacio Iniguez-de-la-Torre, D. Vaquero, Javier Mateos, H. Sanchez-Martin, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Spanish MINECO, FEDEREuropean Commission [SA254P18, TEC2017-83910-R], Junta de Castilla y LeonJunta de Castilla y Leon, and Ministry of Science and Innovation (Ministry of Universities)

Subjects
Imagination, Materials science, microwave detection, media_common.quotation_subject, Bioengineering, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, 7. Clean energy, Impedance measurements, GaN, Responsivity, [SPI]Engineering Sciences [physics], General Materials Science, Electrical and Electronic Engineering, Self-switching diode, Trapping effects, Electrical impedance, Diode, media_common, business.industry, Mechanical Engineering, Relaxation (NMR), impedance measurements, General Chemistry, Atmospheric temperature range, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Mechanics of Materials, Microwave detection, Optoelectronics, trapping effects, 0210 nano-technology, business, Microwave, Voltage
Abstract

[EN]The zero-bias microwave detection capability of self-switching diodes (SSDs) based on AlGaN/GaN is analyzed in a wide temperature range, from 10 K to 300 K. The measured responsivity shows an anomalous enhancement at low temperature, while the detected voltage exhibits a roll-off in frequency, which can be attributed to the presence of surface and bulk traps. To gain a deep insight into this behavior, a systematic DC and AC characterization of the diodes has been carried out in the mentioned temperature range. DC results confirm the existence of traps and AC measurements allow us to identify their properties. In particular, impedance studies enable to distinguish two types of traps: at the lateral surfaces of the channel, with a wide spread of relaxation times, and in the bulk., Spanish MINECO and FEDER through project TEC2017-83910-R and the Junta de Castilla y León and FEDER through project SA254P18.

Published
2020

36. Large-area femtosecond laser milling of silicon employing trench analysis

Author

Etienne Okada, Flavie Braud, Cedric Durand, Christophe Gaquiere, Vanessa Avramovic, Emmanuel Dubois, Justine Philippe, Jean-François Robillard, Daniel Gloria, Arun Bhaskar, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), STMicroelectronics [Crolles] (ST-CROLLES), Puissance - IEMN (PUISSANCE - IEMN), Renatech Network, Laboratoire commun STMicroelectronics-IEMN T4, PCMP CHOP, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
Materials science, Silicon-oninsulator (SOI) technology, FOS: Physical sciences, Laser milling, Applied Physics (physics.app-ph), Systems and Control (eess.SY), 02 engineering and technology, Surface finish, 01 natural sciences, Radio-frequency (RF) integrated circuits, Electrical Engineering and Systems Science - Systems and Control, Optical profilometer characterization, law.invention, [SPI]Engineering Sciences [physics], Etching (microfabrication), law, 0103 physical sciences, FOS: Electrical engineering, electronic engineering, information engineering, Surface roughness, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, Crystalline silicon, Electrical and Electronic Engineering, 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Laser ablation, business.industry, Physics - Applied Physics, 021001 nanoscience & nanotechnology, Laser, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Surface micromachining, Femtosecond laser micromachining, Femtosecond, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business
Abstract

A femtosecond laser is a powerful tool for micromachining of silicon. In this work, large-area laser ablation of crystalline silicon is comprehensively studied using a laser source of pulse width 300 fs at two wavelengths of 343 nm and 1030 nm. We develop a unique approach to gain insight into the laser milling process by means of detailed analysis of trenches. Laser scribed trenches and milled areas are characterized using optical profilometry to extract dimensional and roughness parameters with accuracy and repeatability. In a first step, multiple measures of the trench including the average depth, the volume of recast material, the average longitudinal profile roughness, the inner trench width and the volume removal rate are studied. This allows for delineation of ablation regimes and associated characteristics allowing to determine the impact of fluence and repetition rate on laser milling. In a second step, additional factors of debris formation and material redeposition that come into play during laser milling are further elucidated. These results are utilized for processing large-area (up to few mm2) with milling depths up to 200 {\mu}m to enable the fabrication of cavities with low surface roughness at high removal rates of up to 6.9 {\mu}m3 {\mu}s-1. Finally, laser processing in combination with XeF2 etching is applied on SOI-CMOS technology in the fabrication of radio-frequency (RF) functions standing on suspended membranes. Performance is considerably improved on different functions like RF switch (23 dB improvement in 2nd harmonic), inductors (near doubling of Q-factor) and LNA (noise figure improvement of 0.1 dB) demonstrating the applicability of milling to radio-frequency applications., Comment: 23 pages, 16 figures

Published
2020

37. Evaluation of micro laser sintering metal 3D-printing technology for the development of waveguide passive devices up to 325 GHz

Author

Christophe Gaquiere, Daniel Gloria, C. Belem Goncalves, D. Titz, C. del Rio Bocio, V. Fiorese, Cyril Luxey, Frederic Gianesello, Emmanuel Dubois, Guillaume Ducournau, STMicroelectronics [Crolles] (ST-CROLLES), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Universidad Pública de Navarra [Espagne] = Public University of Navarra (UPNA), Laboratoire de Polytech Nice-Sophia (Polytech'Lab), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Université Côte d'Azur (UCA), Photonique THz - IEMN (PHOTONIQUE THz - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Puissance - IEMN (PUISSANCE - IEMN), Renatech Network, Laboratoire commun STMicroelectronics-IEMN T4, Laboratoire commun STMicroelectronics-IEMN T1, PCMP CHOP, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), Department of Electric and Electronic Engineering of the Public University of Navarra, Université Nice Sophia Antipolis (... - 2019) (UNS), Photonique THz - IEMN (PHOTONIQ THz - IEMN), and Microélectronique Silicium - IEMN (MICROE SI - IEMN)

Subjects
Materials science, horn antenna, Millimeter wave technology, 3D printing, 02 engineering and technology, waveguide, 01 natural sciences, 7. Clean energy, 3D-Printing, law.invention, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Insertion loss, Selective laser melting, 010306 general physics, Waveguide antenna, Lithography, business.industry, 020206 networking & telecommunications, mmW, Selective laser sintering, Horn antenna, Optoelectronics, THz, Laser sintering LS, Antenna (radio), business, Waveguide, additive manufacturing
Abstract

International audience; In this paper, we propose an assessment up to 325 GHz of Micro Laser Sintering (MLS) metal 3D-Printing technology in order to achieve lightweight and cost-effective millimeter wave (mmW) passive function. We first designed and manufactured a bended WR5 waveguide in order to assess achievable roughness and insertion loss. In a second step, an existing 240 GHz choke horn antenna design, previously manufactured using metal coated Stereo Lithography Apparatus (SLA) and Selective Laser Melting (SLM) technologies, has been prototyped using MLS. Measured performances of the MLS antenna prototype have been benchmarked with SLA and DMLS ones. Achieved performances are promising since without any post processing MLS compete up to 325 GHz with metal coated SLA technology while it enables a metallic part manufactured in a single piece.

Published
2020

38. mm-Wave Through-Load Switch for in-situ Vector Network Analyzer on a 55-nm BiCMOS Technology

Author

Christophe Gaquiere, Abdelhalim A. Saadi, Philippe Ferrari, Manuel J. Barragan, Sylvain Bourdel, Emmanuel Pistono, Marc Margalef-Rovira, Reliable RF and Mixed-signal Systems (RMS ), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), Reliable RF and Mixed-signal Systems (TIMA-RMS), and Laboratoire commun STMicroelectronics-IEMN T1

Subjects
Materials science, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, 7. Clean energy, law.invention, law, 3-dB slow-wave coupler, in-situ reflectometer, mm-wave, 0202 electrical engineering, electronic engineering, information engineering, Hardware_INTEGRATEDCIRCUITS, Insertion loss, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, NMOS logic, Load control switch, business.industry, 020208 electrical & electronic engineering, Bandwidth (signal processing), Transistor, 020206 networking & telecommunications, Biasing, switch, PACS 85.42, Power dividers and directional couplers, Optoelectronics, business, on-wafer calibration, Voltage
Abstract

International audience; In this paper, an innovative millimeter-wave (mm-wave) through-load switch for in-situ reflectometers and on-wafer calibration is proposed. This two-port device can switch between two states: (i) a through connection or (ii) a 50 Ω load for both of its ports. The through-load switch is composed of a 3-dB directional coupler and two nMOS transistors controlled through a biasing voltage applied to their gate. Measurement results of a 120-GHz 3-dB directional coupler are provided up to 145 GHz together with EM simulations and circuit-level simulations up to 220 GHz of the through-load switch. A wide bandwidth is obtained, from 73 GHz to 179 GHz, with limited insertion loss of 2 dB.

Published
2020

39. Modeling and analysis of a broadband Schottky diode noise source up to 325 GHz based on 55-nm SiGe BiCMOS technology

Author

Haitham Ghanem, Daniel Gloria, Christophe Gaquiere, Sylvie Lepilliet, Francois Danneville, Guillaume Ducournau, Pascal Chevalier, Joao Carlos Azevedo Goncalves, Issa Alaji, W. Aouimeur, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), STMicroelectronics [Crolles] (ST-CROLLES), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Photonique THz - IEMN (PHOTONIQ THz - IEMN), PCMP CHOP, Laboratoire commun STMicroelectronics-IEMN T1, European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Photonique THz - IEMN (PHOTONIQUE THz - IEMN), and ECSEL TARANTO Project toward Advanced BiCMOS Nanotechnology Platforms for RF and THz Application

Subjects
Radiation, Materials science, Noise measurement, Silicon, business.industry, Schottky diode, chemistry.chemical_element, 020206 networking & telecommunications, Biasing, 02 engineering and technology, Condensed Matter Physics, 7. Clean energy, [SPI]Engineering Sciences [physics], CMOS, chemistry, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Electrical and Electronic Engineering, business, Electrical impedance, Noise (radio), Diode
Abstract

International audience; In this article, the electrical model of a millimeter-wave (mmW), silicon-based noise source is developed in the frequency range up to 325 GHz. The model is studied as a function of the biasing current and the structure size. The noise source is based on a Schottky diode realized on the 55-nm SiGe BiCMOS technology from STMicroelectronics, Crolles, France. Due to the ability of being integrated on silicon, this noise source can be used for high-frequency in situ noise characterization of advanced silicon CMOS or bipolar technologies in the mmW range. In previous study, the diode was used as a noise source when biased near the avalanche regime, and an excess noise ratio (ENR) up to 20 dB has been achieved in a frequency range up to 260 GHz. In this article, the ENR value of the diode is retrieved from the electrical model and compared to the value extracted by measurements. The extracted ENR value was also studied for several diode sizes and biasing currents and measured up to 325 GHz, with a good agreement with the modeling.

Published
2020

40. Highly tunable high-Q inversion-mode MOS varactor in the 1-325-GHz band

Author

Abdelhalim A. Saadi, Manuel J. Barragan, Sylvain Bourdel, Christophe Gaquiere, Emmanuel Pistono, Cedric Durand, Marc Margalef-Rovira, Philippe Ferrari, Daniel Gloria, Loic Vincent, Sylvie Lepilliet, Reliable RF and Mixed-signal Systems (TIMA-RMS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Centre Interuniversitaire de Micro-Electronique (CIME), Institut National Polytechnique de Grenoble (INPG), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics [Crolles] (ST-CROLLES), 0.13039/501100011688-European Union through Toward Advanced BiCMOS NanoTechnology Platforms for RF Applications, Taranto (Grant Number: ECSEL JU GA 737454), PCMP CHOP, Laboratoire commun STMicroelectronics-IEMN T1, European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), and Reliable RF and Mixed-signal Systems (RMS )

Subjects
010302 applied physics, Materials science, business.industry, Electrical model, Semiconductor device modeling, 01 natural sciences, Capacitance, Bicmos technology, Electronic, Optical and Magnetic Materials, PACS 8542, CMOS, Logic gate, Q factor, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Varicap
Abstract

This article presents the design, experimental results, and modeling of an inversion-mode CMOS varactor integrated in the STMicroelectronics 55-nm BiCMOS technology. The device was characterized from 1 to 325 GHz, demonstrating high-quality factor at millimeter-waves. For instance, a quality factor of 7 at around 190 GHz for a tuning ratio ( ${C}_{\text {max}}/{C}_{\text {min}}$ ) greater than 4 was measured. This performance overpasses that of accumulation-mode varactors usually provided in CMOS technologies design kits, for frequencies beyond about 100 GHz. In addition, a small-signal electrical model is provided from 100 to 250 GHz.

Published
2020

41. Indoor real-time passive millimeter wave imager for concealed threats detection

Author

Christophe Gaquiere, Ettien Lazare Kpre, Michael Dons, M. Werquin, Matthieu Egret, Nicolas Vellas, Théo Lahaye, Sylvain Jonniau, and Alexandre Martins

Subjects
Reduction (complexity), Radiometer, Video rate, Computer science, Material resources, Extremely high frequency, Real-time computing, ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION, Measure (physics)
Abstract

Millimeter wave frequencies has been proven to be able to penetrate clothes and luggage allowing the detection of concealed threats. Previous work showed the high performances of the passive Millimeter wave Imager developed by MC2-Technologies. The system can detect threats through clothes in Real-Time up to 16 images/s with a large field-of-view. This paper introduces a patented scanning technique to simultaneously measure radiated wave from two different scenes while providing high performances and video rate images. The proposed approach is integrated in a global solution so-called SACOP and allows the drastically reduction of the staff and material resources for implementation in real environment. Imaging has been conducted at millimeter-wave frequency with conclusions on the merits. The results demonstrate the potential of the new scanning technique for people screening in a challenging indoor situation.

Published
2020

42. Extraction of nonlinear Taylor series coefficients for GaN HEMT over multi-bias condition

Author

Christophe Gaquiere, Ali A. Rezazadeh, A. Tahsin, Mohammad A. Alim, University of Manchester [Manchester], Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Materials science, 020208 electrical & electronic engineering, Mathematical analysis, General Engineering, Volterra series, 020206 networking & telecommunications, 02 engineering and technology, Input impedance, High-electron-mobility transistor, Low frequency, Multi-bias behaviour, GaN FET, symbols.namesake, Nonlinear system, [SPI]Engineering Sciences [physics], 0202 electrical engineering, electronic engineering, information engineering, Taylor series, symbols, Harmonic, Factors of nonlinearity, Taylor series coefficients, Intermodulation
Abstract

International audience; Taylor Series coefficients (TSCs) are one of the main factors behind the device's nonlinearity. Mull-bias behaviour of TSCs for GaN HEMT has been extracted using two-tone technique. To extract the higher-order TSCs of the output current, two-tone intermodulation distortion (IMD) measurement along with properly designed load impedance is used at low frequency (50 and 51 MHz) for the accurate prediction of the cross-term derivatives. For the extraction of TSCs of the nonlinear output current, Volterra series analysis is utilized for the accurate reproduction of the harmonic component. Finally, the verification between the measured and simulated IMD products shows good agreement. This simple and straightforward method is utilized successfully for nonlinearity analysis.

Published
2020

43. Thermal response and correlation between mobility and kink effect in GaN HEMTs

Author

Ali A. Rezazadeh, Christophe Gaquiere, Mohammad A. Alim, S. Afrin, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Mobility model, Work (thermodynamics), Materials science, 02 engineering and technology, High-electron-mobility transistor, Activation energy, 01 natural sciences, law.invention, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, Electrical and Electronic Engineering, Traps, 010302 applied physics, Mobility, Condensed matter physics, Scattering, Kink effect, Transistor, Thermal behaviour, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Threshold voltage, AlGaN/GaN FET, 0210 nano-technology, Voltage
Abstract

International audience; This work notices the relation among the kink effect and the mobility in AlGaN/GaN HEMT and its response to temperature. The kink phenomenon found in transistor behaviour are carefully characterized at persuade point which is straightaway linked to the shallow traps positioned underneath the conduction band. A straightforward relationship among parasitic impacts within the output properties and the existence of deep levels or traps would demonstrate by a temperature-dependent mobility model. This study helps to predict the location of kink voltage in terms of gate bias near to the threshold voltage and also emphasize the impact of the mobility scattering. In expansion, the traps states for GaN HEMT grown on SiC substrate and their related activation energy based on existing literature also summarized.

Published
2020

44. Substrate engineering of inductors on SOI for improvement of Q-factor and application in LNA

Author

Jean-François Robillard, Cedric Durand, Flavie Braud, Christophe Gaquiere, Vanessa Avramovic, Arun Bhaskar, Emmanuel Dubois, Justine Philippe, Daniel Gloria, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), STMicroelectronics [Crolles] (ST-CROLLES), Puissance - IEMN (PUISSANCE - IEMN), Renatech Network, Laboratoire commun STMicroelectronics-IEMN T1, Laboratoire commun STMicroelectronics-IEMN T4, PCMP CHOP, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)

Subjects
Materials science, inductors, Silicon on insulator, FOS: Physical sciences, Context (language use), 02 engineering and technology, Applied Physics (physics.app-ph), Systems and Control (eess.SY), Inductor, Noise figure, Electrical Engineering and Systems Science - Systems and Control, 01 natural sciences, Noise (electronics), Capacitance, 010309 optics, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, FOS: Electrical engineering, electronic engineering, information engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Electronic circuit, SOI, laser processing, business.industry, CMOS, 020208 electrical & electronic engineering, Physics - Applied Physics, Electronic, Optical and Magnetic Materials, LNA, membranes, Q factor, Optoelectronics, lcsh:Electrical engineering. Electronics. Nuclear engineering, business, lcsh:TK1-9971, Biotechnology
Abstract

High Q-factor inductors are critical in designing high performance RF/microwave circuits on SOI technology. Substrate losses is a key limiting factor when designing inductors with high Q-factors. In this context, we report a substrate engineering method that enables improvement of quality factors of already fabricated inductors on SOI. A novel femtosecond laser milling process is utilized for the fabrication of locally suspended membranes of inductors with handler silicon completely etched. Such flexible membranes suspended freely on the BOX show up to 92 % improvement in Q factor for single turn inductor. The improvement in Q-factor is reported on large sized inductors due to reduced parallel capacitance which allows enhanced operation of inductors at high frequencies. A compact model extraction methodology has been developed to model inductor membranes. These membranes have been utilized for the improvement of noise performance of LNA working in the 4.9,5.9 GHz range. A 0.1 dB improvement in noise figure has been reported by taking an existing design and suspending the input side inductors of the LNA circuit. The substrate engineering method reported in this work is not only applicable to inductors but also to active circuits, making it a powerful tool for enhancement of RF devices., Comment: 11 pages, 13 figures

Published
2020
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45. A 30.1 mW/µm2 SiGe:C HBT featuring an implanted collector in a 55-nm CMOS node

Author

Christophe Gaquiere, Alexis Gauthier, Etienne Okada, N. Guitard, Pascal Chevalier, W. Aouimeur, STMicroelectronics [Crolles] (ST-CROLLES), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), ECSEL JU (TARANTO) [GA 737545], Enterprise General Directory of the Finance and Economy Ministry, and PCMP CHOP

Subjects
010302 applied physics, W-band, Materials science, business.industry, Heterojunction bipolar transistor, Load pull, implanted collector, 01 natural sciences, Signal, Electronic, Optical and Magnetic Materials, Silicon-germanium, SiGe HBT, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], W band, CMOS, chemistry, Load-pull, 0103 physical sciences, Optoelectronics, Bicmos integrated circuits, Node (circuits), Electrical and Electronic Engineering, business
Abstract

This letter deals with the load-pull measurements at 94 GHz of 450 GHz Si/SiGe ${f} _{\text {T}}$ HBTs. On the one hand the technological modifications performed to improve large signal performances are presented and on the other hand, load-pull measurements are presented after having describing the measurement setup. A state-of-the-art 30.1 mW / $\mu \text{m}^{{{2}}}$ Si/SiGe HBT is demonstrated thanks to a layout optimization.

Published
2020

46. Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements

Author

Javier Mateos, V. J. Raposo, E. Perez-Martin, Christophe Gaquiere, H. Sanchez-Martin, Tomas Gonzalez, D. Vaquero, Ignacio Iniguez-de-la-Torre, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Spanish MINECO [TEC2017-83910-R], FEDEREuropean Commission [TEC2017-83910-R, SA254P18], Junta de Castilla y LeonJunta de Castilla y Leon [SA254P18], and Ministry of Science and Innovation (Ministry of Universities)

Subjects
Materials science, 02 engineering and technology, Trapping, MIcrowave detection, 7. Clean energy, 01 natural sciences, GaN, Trap (computing), [SPI]Engineering Sciences [physics], Responsivity, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, Safety, Risk, Reliability and Quality, Electrical impedance, Traps, Surface states, Diode, 010302 applied physics, Self-switching diodes, business.industry, 020208 electrical & electronic engineering, Heterojunction, Atmospheric temperature range, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Optoelectronics, business
Abstract

The presence of trap states in self-switching diodes (SSD) based on an AlGaN/GaN heterojunction has been identified by means of their AC characterization between 75 kHz to 30 MHz in a wide temperature range, from 80 K to 300 K. Measurements allow us to determine two different characteristic energies of the traps, 12 meV and 61 meV, being associated to a distribution of surface states and one discrete bulk trap, respectively. The impact of the trapping effects on microwave detection at zero-bias has also been analyzed in the same temperature range, the measured responsivity showing an unusual enhancement and a low-frequency roll-off at low temperatures., Spanish MINECO and FEDER through project TEC2017-83910-R and Junta de Castilla y León and FEDER through project SA254P18

Published
2020

47. Design of mm-wave slow-wave coupled coplanar waveguides

Author

Manuel J. Barragan, Sylvain Bourdel, Sylvie Lepilliet, Marc Margalef-Rovira, Jose Lugo-Alvarez, Florence Podevin, Emmanuel Pistono, Loic Vincent, Christophe Gaquiere, Alfredo Bautista, Abdelhalim A. Saadi, Philippe Ferrari, Reliable RF and Mixed-signal Systems (RMS ), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Advanced Silicon S.A. (AS), Centre Interuniversitaire de Micro-Electronique (CIME), Institut National Polytechnique de Grenoble (INPG), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), PCMP CHOP, European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017), Reliable RF and Mixed-signal Systems (TIMA-RMS), and Laboratoire commun STMicroelectronics-IEMN T1

Subjects
coupling coefficient, Semiconductor device modeling, CMOS/BiCMOS technology, 02 engineering and technology, STRIPS, BiCMOS, Microstrip, law.invention, Optics, slow-wave concept, law, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Physics, Radiation, business.industry, Coplanar waveguide, 020206 networking & telecommunications, Condensed Matter Physics, PACS 8542, CMOS, Power dividers and directional couplers, business, Coupling coefficient of resonators, directional couplers
Abstract

International audience; This paper focuses on the design of high-performance Coupled Slow-wave CoPlanar Waveguide (CS-CPW) in CMOS technologies for the mm-wave frequency bands. First, the theory as well as the electrical model of the CS-CPW are presented. Next, the analytical approach for the calculation of the model parameters is discussed. Then, by using the developed model, two millimeter-wave backward directional 3-dB couplers are designed in a Bipolar Complementary-Metal-Oxide-Semiconductor (BiCMOS) 55-nm technology for 120 and 185-GHz operation, respectively. Simulation and experimental results demonstrate that the use of the CS-CPW concept leads to state-of-the-art performance, with a good agreement between the analytical model, electromagnetic simulations and measurement results.

Published
2020

48. Power Measurement Setup Development for On-Wafer Characterization at 185–191 GHz

Author

Guillaume Ducournau, Etienne Okada, Sylvie Lepilliet, Caroline Maye, Daniel Gloria, Christophe Gaquiere, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), STMicroelectronics [Crolles] (ST-CROLLES), Photonique THz - IEMN (PHOTONIQ THz - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Laboratoire commun STMicroelectronics-IEMN T1, PCMP CHOP, Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and Photonique THz - IEMN (PHOTONIQUE THz - IEMN)

Subjects
Power gain, Test bench, Power-added efficiency, Materials science, business.industry, Electrical engineering, 020206 networking & telecommunications, Tuner, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, 7. Clean energy, Power (physics), [SPI]Engineering Sciences [physics], Electricity generation, 0202 electrical engineering, electronic engineering, information engineering, Hardware_INTEGRATEDCIRCUITS, Device under test, Radio frequency, RF Calibration methods, business, High frequency measurements Impedance Synthesizer Power measurements
Abstract

International audience; This article presents off-wafer scalar power setup dedicated to load-pull measurement for characterization of on-wafer active devices between 185 and 191 GHz. The system architecture allows us to determine the absorbed input power, the output power delivered to the load, the power added efficiency and the power gain of a device. Preliminary measurements achieved on integrated tuner on silicon proves the potentiality of the test bench: an accuracy of +/- 0.5 dB is obtained from -20 to 8 dBm of injected power at the input plane of the integrated device under test and detections of the reflected and output powers are realized from -25 to 5 dBm and from -35 to 13 dBm respectively.

Published
2020
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49. Multibias and thermal behavior of microwave GaN and GaAs based HEMTs

Author

Christophe Gaquiere, Mohammad A. Alim, and Ali A. Rezazadeh

Subjects
010302 applied physics, Materials science, Equivalent series resistance, business.industry, Schottky barrier, Thermal resistance, Transconductance, 02 engineering and technology, High-electron-mobility transistor, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Capacitance, Electronic, Optical and Magnetic Materials, Threshold voltage, 0103 physical sciences, Materials Chemistry, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, Voltage
Abstract

Multibias and thermal characterizations on 0.25 μm × (2 × 100) μm AlGaN/GaN/SiC HEMT and 0.5 μm × (2 × 100) μm AlGaAs/InGaAs pseudomorphic HEMT have carried out for the first time. Two competitive device technologies are investigated with the variations of bias and temperature in order to afford a detailed realization of their potentialities. The main finding includes the self heating effect in the GaN device, zero temperature coefficient points at the drain current and transconductance in the GaAs device. The thermal resistance RTH of 7.1, 8.2 and 9.4 °C mm/W for the GaN device was estimated at 25, 75 and 150 °C respectively which are consistent with those found in the open literature. The temperature trend of the threshold voltage VT, Schottky barrier height ϕb, sheet charge densities of two dimensional electron gas ns, and capacitance under the gate Cg are exactly opposite in the two devices; whereas the knee voltage Vk, on resistance Ron, and series resistance Rseries are shows similar trend. The multi-bias and thermal behavior of the output current Ids, output conductance gds, transconductance gm, cut-off frequency ft, maximum frequency fmax, effective velocity of electron, veff and field dependent mobility, μ demonstrates a great potential of GaN device. These results provide some valuable insights for technology of preference for future and current applications.

Published
2016

50. Low‐loss broadband (DC to 220 GHz) S‐CPW to S‐CPS transition for S‐CPS coplanar probing

Author

Abdelhalim A. Saadi, Philippe Ferrari, Christophe Gaquiere, Marc Margalef-Rovira, Sylvie Lepilliet, Loic Vincent, Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Materials science, business.industry, Coplanar waveguide, 020208 electrical & electronic engineering, 02 engineering and technology, STRIPS, Signal, law.invention, [SPI]Engineering Sciences [physics], Electric power transmission, law, Broadband, 0202 electrical engineering, electronic engineering, information engineering, Return loss, Optoelectronics, Insertion loss, Electrical and Electronic Engineering, business, Stripline
Abstract

International audience; The practical issue of probing coplanar stripline (CPS) structures is addressed in this Letter. A compact slow-wave coplanar waveguide (S-CPW) to slow-wave CPS (S-CPS) transition was designed and fabricated in a 55 nm BiCMOS process of STMicroelectronics. The signal strips of the slow-wave CPW and slow-wave CPS have been directly connected while the ground strips have been tied together through combination of transmission lines laid out on the top metal layer of the back-end-of-line of the technology. Thanks to its flexibility, the proposed transition can be resized to match with a wide range of slow-wave CPS slot. Tested from DC to 220 GHz, the back-to-back transition structure showed insertion loss lower than 1.4 dB and return loss better than 15 dB, respectively. To the best of author's knowledge, it is the first integrated slow-wave CPW/CPS transition introduced within the mentioned mm-wave band.

Published
2019

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