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Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements
- Source :
- GREDOS. Repositorio Institucional de la Universidad de Salamanca, instname, Microelectronics Reliability, Microelectron. Reliab. 114, Special issue (2020), 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2020, 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2020, Oct 2020, Athens, Greece. Microelectron. Reliab. 114, Special issue, 113806, ⟨10.1016/j.microrel.2020.113806⟩
- Publication Year :
- 2020
- Publisher :
- Elsevier, 2020.
-
Abstract
- The presence of trap states in self-switching diodes (SSD) based on an AlGaN/GaN heterojunction has been identified by means of their AC characterization between 75 kHz to 30 MHz in a wide temperature range, from 80 K to 300 K. Measurements allow us to determine two different characteristic energies of the traps, 12 meV and 61 meV, being associated to a distribution of surface states and one discrete bulk trap, respectively. The impact of the trapping effects on microwave detection at zero-bias has also been analyzed in the same temperature range, the measured responsivity showing an unusual enhancement and a low-frequency roll-off at low temperatures.<br />Spanish MINECO and FEDER through project TEC2017-83910-R and Junta de Castilla y León and FEDER through project SA254P18
- Subjects :
- Materials science
02 engineering and technology
Trapping
MIcrowave detection
7. Clean energy
01 natural sciences
GaN
Trap (computing)
[SPI]Engineering Sciences [physics]
Responsivity
0103 physical sciences
0202 electrical engineering, electronic engineering, information engineering
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Electrical impedance
Traps
Surface states
Diode
010302 applied physics
Self-switching diodes
business.industry
020208 electrical & electronic engineering
Heterojunction
Atmospheric temperature range
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Optoelectronics
business
Subjects
Details
- ISSN :
- 00262714
- Database :
- OpenAIRE
- Journal :
- GREDOS. Repositorio Institucional de la Universidad de Salamanca, instname, Microelectronics Reliability, Microelectron. Reliab. 114, Special issue (2020), 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2020, 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2020, Oct 2020, Athens, Greece. Microelectron. Reliab. 114, Special issue, 113806, ⟨10.1016/j.microrel.2020.113806⟩
- Accession number :
- edsair.doi.dedup.....d1debef9cca7c57c9b6476e7f7bf0458