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Extraction of nonlinear Taylor series coefficients for GaN HEMT over multi-bias condition

Authors :
Christophe Gaquiere
Ali A. Rezazadeh
A. Tahsin
Mohammad A. Alim
University of Manchester [Manchester]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Puissance - IEMN (PUISSANCE - IEMN)
Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Source :
Microelectronics Journal, Microelectronics Journal, Elsevier, 2020, 96, 104700, 6 p. ⟨10.1016/j.mejo.2020.104700⟩, Microelectronics Journal, 2020, 96, 104700, 6 p. ⟨10.1016/j.mejo.2020.104700⟩
Publication Year :
2020
Publisher :
HAL CCSD, 2020.

Abstract

International audience; Taylor Series coefficients (TSCs) are one of the main factors behind the device's nonlinearity. Mull-bias behaviour of TSCs for GaN HEMT has been extracted using two-tone technique. To extract the higher-order TSCs of the output current, two-tone intermodulation distortion (IMD) measurement along with properly designed load impedance is used at low frequency (50 and 51 MHz) for the accurate prediction of the cross-term derivatives. For the extraction of TSCs of the nonlinear output current, Volterra series analysis is utilized for the accurate reproduction of the harmonic component. Finally, the verification between the measured and simulated IMD products shows good agreement. This simple and straightforward method is utilized successfully for nonlinearity analysis.

Details

Language :
English
ISSN :
00262692
Database :
OpenAIRE
Journal :
Microelectronics Journal, Microelectronics Journal, Elsevier, 2020, 96, 104700, 6 p. ⟨10.1016/j.mejo.2020.104700⟩, Microelectronics Journal, 2020, 96, 104700, 6 p. ⟨10.1016/j.mejo.2020.104700⟩
Accession number :
edsair.doi.dedup.....8f99fdb3d6abd90ea1c3bf47e9baf37f