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1. Dual‐Color Emission from Monolithic m‐Plane Core–Shell InGaN/GaN Quantum Wells

Author

Akanksha Kapoor, Vincent Grenier, Eric Robin, Catherine Bougerol, Gwénolé Jacopin, Bruno Gayral, Maria Tchernycheva, Joël Eymery, and Christophe Durand

Subjects
dual-color emission, InGaN, light-emitting devices, nanowires, quantum wells, Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467
Abstract

A dual‐color emission is achieved combining two monolithic sets of core–shell multiple quantum wells (MQWs) grown on GaN microwires. The shell heterostructure is composed of 3× blue MQWs and 7× green MQWs with photoluminescence emission covering 400–450 and 450–550 nm wavelength bands, respectively. Both emissions are coming from the two MQW sets grown on m‐plane sidewall surface, as revealed by cathodoluminescence mapping. Advanced structural characterization combining transmission electron microscopy and energy‐dispersive X‐ray analysis is performed on longitudinal cross‐sectional slices of the wires. Considering asymmetrical QW interface, the In content is measured to be equal to 15.7 (±0.5)% and 23.5 (±2.0)% in the first and the second MQW set consistent with the blue and green emissions. Extended defects are formed originating from the second MQW set due to higher In content. A flexible light‐emitting diode (LED) is fabricated based on these dual core–shell MQWs, showing an electroluminescence dominated by green emission due to efficient hole injection in the In‐rich second MQW set. This work opens the way for multiple color emission from core–shell MQWs for phosphor‐free nanowire‐based LED applications.

Published
2021
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2. Optical properties of Ga-doped AlN nanowires

Author

Rémy Vermeersch, Gwénolé Jacopin, Eric Robin, Julien Pernot, Bruno Gayral, Bruno Daudin, Semi-conducteurs à large bande interdite (NEEL - SC2G), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), and Modélisation et Exploration des Matériaux (MEM)

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], Physics and Astronomy (miscellaneous)
Abstract

International audience; We show that intentional Ga doping of AlN nanowires in the 0.01%–0.5% range leads to the spontaneous formation of nanometric carrier localization centers. Accordingly, for single nanowires, we observed a collection of sharp cathodoluminescence lines in a wavelength range spanning from 220 to 300 nm. From temperature-dependent cathodoluminescence, a ratio between the intensity at room temperature and 5 K of 20–30% is measured. We found that an ensemble of Ga-doped AlN nanowires exhibits a wide-band cathodoluminescence emission, which opens the path to the realization of efficient UV-C light emitting diodes covering a wide part of DNA absorption band.

Published
2023

3. Toward Crack-Free Core–Shell GaN/AlGaN Quantum Wells

Author

Christophe Durand, Gwénolé Jacopin, Bruno Gayral, Vincent Grenier, Joël Eymery, Sylvain Finot, Catherine Bougerol, Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Semi-conducteurs à large bande interdite (SC2G), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), Semi-conducteurs à large bande interdite (NEEL - SC2G), Nanophysique et Semiconducteurs (NEEL - NPSC), and ANR-19-CE42-0016,PiezoSens,Capteurs Piezo-électriques à base de NanoFils(2019)

Subjects
Materials science, Cracks, Nanowire, 02 engineering and technology, Epitaxy, 01 natural sciences, Core shell, MOVPE, 0103 physical sciences, General Materials Science, Metalorganic vapour phase epitaxy, Quantum well, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS]Physics [physics], business.industry, Nanowires, Relaxation (NMR), General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Crack free, Elastic relaxation, Cracking, GaN/AlGaN MQW, Optoelectronics, 0210 nano-technology, business
Abstract

Strain relaxation of nonpolar GaN/Al0.6Ga0.4N multiple quantum wells grown in core–shell geometry by metal–organic vapor-phase epitaxy on GaN wires is investigated. Cracking along the a-direction i...

Published
2021

4. Quasi-strain-free GaN on van der Waals substrates: the case of graphene and muscovite mica

Author

Oleksii Volodymyrovych Klymov, Rémy Vermeersch, Edith Bellet-Amalric, Ana Cros, Marion Gruart, Hanako Okuno, Nicolas Mollard, Jean-Luc Rouvière, Núria Garro, María José Recio-Carretero, Nathaniel Feldberg, Stéphanie Pouget, Fabrice Donatini, Bruno Gayral, Saül Garcia-Orrit, Catherine Bougerol, and Bruno Daudin

Subjects
symbols.namesake, Materials science, Strain (chemistry), Graphene, law, Chemical physics, Muscovite, engineering, symbols, Mica, engineering.material, van der Waals force, law.invention
Published
2021

6. Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy

Author

Rémy Vermeersch, Edith Bellet-Amalric, Núria Garro, Nathaniel Feldberg, Fabrice Donatini, Ana Cros, Bruno Gayral, Jean-Luc Rouvière, Catherine Bougerol, Saül Garcia-Orrit, Bruno Daudin, Maria José Recio Carretero, Nanophysique et Semiconducteurs (NPSC), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Optique & Microscopies (NEEL - POM), Nanophysique et Semiconducteurs (NEEL - NPSC), Modélisation et Exploration des Matériaux (MEM), Institut Universitari de Ciencia dels Materials (ICMUV), and Universitat de València (UV)

Subjects
[PHYS]Physics [physics], Materials science, Mechanical Engineering, Muscovite, Nucleation, Bioengineering, Cathodoluminescence, 02 engineering and technology, General Chemistry, engineering.material, 010402 general chemistry, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, 0104 chemical sciences, Crystallography, Mechanics of Materials, Transmission electron microscopy, engineering, General Materials Science, Mica, Electrical and Electronic Engineering, 0210 nano-technology, Wurtzite crystal structure, Molecular beam epitaxy
Abstract

The mechanisms of plasma-assisted molecular beam epitaxial growth of GaN on muscovite mica were investigated. Using a battery of techniques, including scanning and transmission electron microscopy, atomic force microscopy, cathodoluminescence, Raman spectroscopy and x-ray diffraction, it was possible to establish that, in spite of the lattice symmetry mismatch, GaN grows in epitaxial relationship with mica, with the [11–20] GaN direction parallel to [010] direction of mica. GaN layers could be easily detached from the substrate via the delamination of the upper layers of the mica itself, discarding the hypothesis of a van der Waals growth mode. Mixture of wurtzite (hexagonal) and zinc blende (ZB) (cubic) crystallographic phases was found in the GaN layers with ratios highly dependent on the growth conditions. Interestingly, almost pure ZB GaN epitaxial layers could be obtained at high growth temperature, suggesting the existence of a specific GaN nucleation mechanism on mica and opening a new way to the growth of the thermodynamically less stable ZB GaN phase.

Published
2021

7. Nanoscale imaging of dopant incorporation in n-type and p-type GaN nanowires by scanning spreading resistance microscopy

Author

Ece N. Aybeke, Alexandra-Madalina Siladie, Rémy Vermeersch, Eric Robin, Oleksandr Synhaivskyi, Bruno Gayral, Julien Pernot, Georges Brémond, Bruno Daudin, INL - Matériaux Fonctionnels et Nanostructures (INL - MFN), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Semi-conducteurs à large bande interdite (NEEL - SC2G), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), and Université Grenoble Alpes (UGA)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Physics and Astronomy
Abstract

International audience

Published
2022

8. UV Emission from GaN Wires with m -Plane Core–Shell GaN/AlGaN Multiple Quantum Wells

Author

Nicolas Mollard, Joël Eymery, Gwénolé Jacopin, Eric Robin, Vincent Grenier, Bruno Gayral, Christophe Durand, Eva Monroy, Catherine Bougerol, Sylvain Finot, Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Semi-conducteurs à large bande interdite (SC2G), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Nanostructures et Rayonnement Synchrotron (NRS ), Semi-conducteurs à large bande interdite (NEEL - SC2G), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), and Nanophysique et Semiconducteurs (NEEL - NPSC)

Subjects
Photoluminescence, Materials science, wires, 02 engineering and technology, Epitaxy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, MOVPE, symbols.namesake, 0103 physical sciences, General Materials Science, Metalorganic vapour phase epitaxy, nonpolar planes, Quantum well, GaN/AlGaN heterostructures, 010302 applied physics, business.industry, Heterojunction, 021001 nanoscience & nanotechnology, UV, Stark effect, symbols, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Quantum efficiency, 0210 nano-technology, business, Luminescence
Abstract

International audience; The present work reports high-quality nonpolar GaN/Al0.6Ga0.4N multiple quantum wells (MQWs) grown in core−shell geometry by metal−organic vapor-phase epitaxy on them-plane sidewalls ofc̅-oriented hexagonal GaN wires. Optical and structural studies reveal ultraviolet (UV) emission originating from the core−shell GaN/AlGaN MQWs. Tuning them-plane GaNQW thickness from 4.3 to 0.7 nm leads to a shift of the emission from 347 to 292 nm, consistent with Schrödinger−Poissoncalculations. The evolution of the luminescence with temperature displays signs of strong localization, especially for samples with thinner GaN QWs and no evidence of quantum-confined Stark effect, as expected for nonpolar-plane surfaces. The internal quantum efficiency derived from the photoluminescence (PL) intensity ratio at low and room temperatures is maximum (∼7.3%measured at low power excitation) for 2.6 nm thick quantum wells, emitting at 325 nm, and shows a large drop for thicker QWs. An extensive study of the PL quenching with temperature is presented. Two nonradiative recombination paths are activated at different temperatures. The low-temperature path is found to be intrinsic to the heterostructure, whereas the process that dominates at high temperature depends on the QW thickness and is strongly enhanced for QWs larger than 2.6 nm, causing a rapid decrease in the internal quantum efficiency.

Published
2020

9. UV Emission from GaN Wires with

Author

Vincent, Grenier, Sylvain, Finot, Gwénolé, Jacopin, Catherine, Bougerol, Eric, Robin, Nicolas, Mollard, Bruno, Gayral, Eva, Monroy, Joël, Eymery, and Christophe, Durand

Abstract

The present work reports high-quality nonpolar GaN/Al

Published
2020

10. Enhanced UV Emission of GaN Nanowires Functionalized by Wider Band Gap Solution-Processed p-MnO Quantum Dots

Author

Dhaifallah R. Almalawi, Tahani H. Flemban, Bruno Daudin, Somak Mitra, Bruno Gayral, Iman S. Roqan, Sergei Lopatin, Alexandra-Madalina Siladie, King Abdullah University of Science and Technology (KAUST), Taif University (TU), Partenaires INRAE, University of Dammam - Imam Abdulrahman Bin Faisal University, Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)

Subjects
Materials science, Photoluminescence, Band gap, Nanowire, light-emitting devices, 02 engineering and technology, 01 natural sciences, 010309 optics, p-type MnO quantum dots, 0103 physical sciences, General Materials Science, Spontaneous emission, semiconductor nanowires, electron energy loss spectroscopy, business.industry, Electron energy loss spectroscopy, 021001 nanoscience & nanotechnology, III-nitrides, Quantum dot, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Quantum efficiency, 0210 nano-technology, business, Molecular beam epitaxy, Research Article
Abstract

GaN-based UV light-emitting devices suffer from low efficiency. To mitigate this issue, we hybridized GaN nanowires (NWs) grown on Si substrates by plasma-assisted molecular beam epitaxy with solution-processed p-type MnO quantum dots (QDs) characterized by a wider band gap (∼5 eV) than that of GaN. Further investigations reveal that the photoluminescence intensity of the GaN NWs increases up to ∼3.9-fold (∼290%) after functionalizing them with p-MnO QDs, while the internal quantum efficiency is improved by ∼1.7-fold. Electron energy loss spectroscopy (EELS) incorporated into transmission electron microscopy reveals an increase in the density of states in QD-decorated NWs compared to the bare ones. The advanced optical and EELS analyses indicate that the energy transfer from the wider band gap p-MnO QDs to n-GaN NW can lead to substantial emission enhancement and greater radiative recombination contribution because of the good band alignment between MnO QDs and GaN NWs. This work provides valuable insights into an environmentally friendly strategy for improving UV device performance.

Published
2020

11. Correlated electro-optical and structural study of electrically tunable nanowire quantum dot emitters

Author

Bruno Gayral, Martien Den Hertog, Eva Monroy, Akhil Ajay, Maria Spies, Matériaux, Rayonnements, Structure (NEEL - MRS), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), ANR-18-CE24-0014,UVLASE,Laser UV à pompage électronique(2018), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), ANR-16-TERC-0024,e-See,Détection d'un électron unique par microscopie électronique en transmission(2016), Matériaux, Rayonnements, Structure (MRS), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), and Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Photon, Exciton, Nanowire, Physics::Optics, FOS: Physical sciences, Bioengineering, 02 engineering and technology, Condensed Matter::Materials Science, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), General Materials Science, Quantum tunnelling, Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, Mechanical Engineering, Quantum-confined Stark effect, Materials Science (cond-mat.mtrl-sci), Heterojunction, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Band bending, Quantum dot, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business
Abstract

Quantum dots inserted in semiconducting nanowires are an interesting platform for the fabrication of single photon devices. To fully understand the physical properties of these objects, we need to correlate the optical, transport, and structural properties on the same nanostructure. In this work, we study the spectral tunability of the emission of a single quantum dot in a GaN nanowire by applying external bias. The nanowires are dispersed and contacted on electron beam transparent Si3N4 membranes, so that transmission electron microscopy observations, photocurrent, and micro-photoluminescence measurements under bias can be performed on the same specimen. The emission from a single dot blue or red shifts when the external electric field compensates or enhances the internal electric field generated by the spontaneous and piezoelectric polarization. A detailed study of two nanowire specimens emitting at 327.5 and 307.5 nm shows spectral shifts at rates of 20 and 12 meV/V, respectively. Theoretical calculations facilitated by the modeling of the exact heterostructure provide a good description of the experimental observations. When the bias-induced band bending is strong enough to favor tunneling of the electron in the dot toward the stem or the cap, the spectral shift saturates and additional transitions associated with charged excitons can be observed.

Published
2020
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12. Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform

Author

Benjamin Damilano, Blandine Alloing, Laetitia Doyennette, Fabrice Semond, Hassen Souissi, Farsane Tabataba-Vakili, Xavier Checoury, Bruno Gayral, Christelle Brimont, Eric Frayssinet, Jean-Yves Duboz, Philippe Boucaud, Thierry Guillet, Sébastien Chenot, Moustafa El Kurdi, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), ANR-17-CE08-0043,MILAGAN,Laser microdisque en (Al,Ga,In)-N injecté électriquement(2017), and Université Nice Sophia Antipolis (... - 2019) (UNS)

Subjects
Materials science, Silicon, chemistry.chemical_element, FOS: Physical sciences, Gallium nitride, 02 engineering and technology, Applied Physics (physics.app-ph), Nitride, Grating, 01 natural sciences, 7. Clean energy, Waveguide (optics), law.invention, 010309 optics, chemistry.chemical_compound, law, 0103 physical sciences, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Physics - Applied Physics, 021001 nanoscience & nanotechnology, Laser, Atomic and Molecular Physics, and Optics, chemistry, Optoelectronics, Photonics, 0210 nano-technology, business, Lasing threshold
Abstract

Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride-on-silicon platform with gallium nitride (GaN) as the main waveguide layer. The photonic circuits consist of a microdisk and a pulley waveguide, terminated by out-coupling gratings. In this Letter, we measure quality factors up to 3500 under continuous-wave excitation. Lasing is observed from 374 to 399 nm under pulsed excitation, achieving low-threshold energies of 0.14 m J / c m 2 per pulse (threshold peak powers of 35 k W / c m 2 ). A large peak-to-background dynamic of around 200 is observed at the out-coupling grating for small gaps of 50 nm between the disk and the waveguide. These devices operate at the limit of what can be achieved with GaN in terms of operation wavelength.

Published
2020
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13. Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon

Author

Benjamin Damilano, Christelle Brimont, Stephanie Rennesson, Sébastien Sauvage, Thierry Guillet, Moustafa El Kurdi, Xavier Checoury, Fabrice Semond, Philippe Boucaud, Jean-Yves Duboz, Farsane Tabataba-Vakili, Eric Frayssinet, Laetitia Doyennette, Bruno Gayral, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), and ANR-17-CE08-0043,MILAGAN,Laser microdisque en (Al,Ga,In)-N injecté électriquement(2017)

Subjects
Materials science, Silicon, lcsh:Medicine, FOS: Physical sciences, chemistry.chemical_element, Physics::Optics, Applied Physics (physics.app-ph), 02 engineering and technology, Nitride, 7. Clean energy, 01 natural sciences, Article, 010309 optics, 0103 physical sciences, Lasers, LEDs and light sources, Spontaneous emission, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], lcsh:Science, Electronic circuit, Semiconductor lasers, Coupling, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Multidisciplinary, business.industry, lcsh:R, Physics - Applied Physics, 021001 nanoscience & nanotechnology, 3. Good health, Microresonators, Optics and photonics, chemistry, Optoelectronics, lcsh:Q, Photonics, Whispering-gallery wave, 0210 nano-technology, business, Lasing threshold, Physics - Optics, Optics (physics.optics)
Abstract

On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in the blue spectral range based on microdisks and bus waveguides in III-nitride on silicon. We report on the interplay between microdisk-waveguide coupling and its optical properties. We observe critical coupling and phase matching, i.e. the most efficient energy transfer scheme, for very short gap sizes and thin waveguides (g = 45 nm and w = 170 nm) in the spontaneous emission regime. Whispering gallery mode lasing is demonstrated for a wide range of parameters with a strong dependence of the threshold on the loaded quality factor. We show the dependence and high sensitivity of the output signal on the coupling. Lastly, we observe the impact of processing on the tuning of mode resonances due to the very short coupling distances. Such small footprint on-chip integrated microlasers providing maximum energy transfer into a photonic circuit have important potential applications for visible-light communication and lab-on-chip bio-sensors., Comment: 10 pages, 6 figures, supplementary: 6 pages, 8 figures

Published
2019

14. Impact of kinetics on the growth of GaN on graphene by plasma-assisted molecular beam epitaxy

Author

Catherine Bougerol, Bruno Daudin, Núria Garro, Edith Bellet-Amalric, Hanako Okuno, Ana Cros, Marion Gruart, Stéphanie Pouget, Nathaniel Feldberg, Bruno Gayral, PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Nanophysique et Semiconducteurs (NPSC), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Universitat Politècnica de València (UPV), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Nanophysique et Semiconducteurs (NEEL - NPSC)

Subjects
Photoluminescence, Materials science, Nucleation, Nanowire, Bioengineering, 02 engineering and technology, 010402 general chemistry, Epitaxy, 01 natural sciences, law.invention, GaN, symbols.namesake, law, General Materials Science, Electrical and Electronic Engineering, Graphene, Mechanical Engineering, Van der Waals epitaxy, General Chemistry, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Mechanics of Materials, Chemical physics, Transmission electron microscopy, symbols, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology, Raman spectroscopy, Molecular beam epitaxy
Abstract

International audience; The growth of GaN on graphene by molecular beam epitaxy was investigated. The most stable epitaxial relationship, i.e. [00.1]-oriented grains, is obtained at high temperature and N-rich conditions, which match those for nanowire growth. Alternatively, at moderate temperature and Ga-rich conditions, several metastable orientations are observed at the nucleation stage, which evolve preferentially towards [00.1]-oriented grains. The dependence of the nucleation regime on growth conditions was assigned to Ga adatom kinetics. This statement is consistent with the calculated graphene/GaN in-plane lattice coincidence and supported by a combination of transmission electron microscopy, x-ray diffraction, photoluminescence, and Raman spectroscopy experiments.

Published
2019

15. Blue Microlasers Integrated on a Photonic Platform on Silicon

Author

Jean-Yves Duboz, Xavier Checoury, Christelle Brimont, Benjamin Damilano, Fabrice Semond, Philippe Boucaud, Farsane Tabataba-Vakili, Thierry Guillet, Moustafa El Kurdi, Stephanie Rennesson, Sébastien Sauvage, Eric Frayssinet, Iännis Roland, Laetitia Doyennette, Bruno Gayral, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), ANR Quanonic, ANR Milagan, Labex Ganex, ANR-17-CE08-0043,MILAGAN,Laser microdisque en (Al,Ga,In)-N injecté électriquement(2017), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), ANR-13-BS10-0010,QUANONIC,Optique quantique et non-linéaire dans des cavités nitrures(2013), and Université Nice Sophia Antipolis (1965 - 2019) (UNS)

Subjects
Materials science, Nanophotonics, FOS: Physical sciences, Physics::Optics, Applied Physics (physics.app-ph), 02 engineering and technology, Grating, 01 natural sciences, law.invention, 010309 optics, law, 0103 physical sciences, Electrical and Electronic Engineering, Quantum well, business.industry, Physics - Applied Physics, 021001 nanoscience & nanotechnology, Laser, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], Optoelectronics, Whispering-gallery wave, Photonics, 0210 nano-technology, business, Waveguide, Lasing threshold, Biotechnology
Abstract

International audience; The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers integrated on silicon and emitting in the blue spectral range is demonstrated. The active microdisks are side-coupled to suspended bus waveguides, and the coupled emission is guided and outcoupled to free space using grating couplers. A small gap size of less than 100 nm between the disk and the waveguide is required in the blue spectral range for optimal evanescent coupling. To avoid reabsorption of the microdisk emission in the waveguide, the quantum wells are etched away from the waveguide. Under continuous-wave excitation, loaded quality factors greater than 2000 are observed for the whispering gallery modes for devices with small gaps and large waveguide bending angles. Under pulsed excitation conditions, lasing is evidenced for 3 μm diameter microdisks integrated in a full photonic circuit. We thus present a first demonstration of a III-nitride microlaser coupled to a nanophotonic circuit.

Published
2018

16. Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy

Author

Gwénolé Jacopin, Jean-Luc Rouvière, Bruno Daudin, Ana Cros, Núria Garro, Alexandre Concordel, Bruno Gayral, Semi-conducteurs à large bande interdite (SC2G ), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Univ Valencia, Inst Ciencia Mat, E-46980 Paterna, Valencia, Spain, Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut Nanosciences et Cryogénie (INAC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Semi-conducteurs à large bande interdite (NEEL - SC2G), and Universitat Politècnica de València (UPV)

Subjects
010302 applied physics, Kelvin probe force microscope, Polarity reversal, Materials science, Physics and Astronomy (miscellaneous), Polarity (physics), business.industry, Nanowire, Cathodoluminescence, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, 7. Clean energy, Isotropic etching, [SPI.MAT]Engineering Sciences [physics]/Materials, Nanolithography, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology, business, Molecular beam epitaxy
Abstract

International audience; It is demonstrated that the N-polarity of GaN nanowires (NWs) spontaneously nucleated on Si (111) by molecular beam epitaxy can be reversed by intercalation of an Al-or Ga-oxynitride thin layer. The polarity change has been assessed by a combination of chemical etching, Kelvin probe force microscopy, cathodo-and photoluminescence spectroscopy and transmission electron microscopy experiments. Cathodoluminescence of the Ga-polar NW section exhibits a higher intensity in the band edge region, consistent with a reduced incorporation of chemical impurities. The polarity reversal method we propose opens the path to the integration of optimized metal-polar NW devices on any kind of substrates.

Published
2019

17. III-nitride on silicon electrically injected microrings for nanophotonic circuits

Author

Stephanie Rennesson, Sébastien Sauvage, Philippe Boucaud, Benjamin Damilano, Thierry Guillet, Fabrice Semond, Bruno Gayral, Xavier Checoury, Farsane Tabataba-Vakili, Moustafa El Kurdi, Christelle Brimont, Laetitia Doyennette, Iännis Roland, Jean-Yves Duboz, Eric Frayssinet, Raffaele Colombelli, Bruno Paulillo, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Université Nice Sophia Antipolis (1965 - 2019) (UNS), and ANR-17-CE08-0043,MILAGAN,Laser microdisque en (Al,Ga,In)-N injecté électriquement(2017)

Subjects
Materials science, Silicon, Nanophotonics, chemistry.chemical_element, FOS: Physical sciences, 02 engineering and technology, Applied Physics (physics.app-ph), Electroluminescence, 01 natural sciences, 010309 optics, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electronic circuit, Power density, business.industry, Direct current, Physics - Applied Physics, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, chemistry, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], Optoelectronics, Photonics, 0210 nano-technology, business, Lasing threshold
Abstract

International audience; Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection scheme using a metal microbridge contact in thin III-nitride on silicon mushroom-type microrings that is compatible with integrated nanophotonic circuits with the goal of achieving electrically injected lasing. Using a central buried n-contact to bypass the insulating buffer layers, we are able to underetch the microring, which is essential for maintaining vertical confinement in a thin disk. We demonstrate direct current room-temperature electroluminescence with 440 mW/cm 2 output power density at 20 mA from such microrings with diameters of 30 to 50 µm. The first steps towards achieving an integrated photonic circuit are demonstrated.

Published
2019

18. Towards III-nitride on silicon active photonic circuits

Author

Jean-Yves Duboz, Xavier Checoury, Stephanie Rennesson, Sébastien Sauvage, Laetitia Doyennette, Bruno Gayral, Fabrice Semond, Benjamin Damilano, Farsane Tabataba-Vakili, M. El Kurdi, Thierry Guillet, Christelle Brimont, Iännis Roland, Philippe Boucaud, Julien Brault, and Eric Frayssinet

Subjects
Materials science, Silicon, business.industry, chemistry.chemical_element, Gallium nitride, Nitride, Indium gallium nitride, Epitaxy, chemistry.chemical_compound, Semiconductor, chemistry, Optoelectronics, Photonics, business, Lasing threshold
Abstract

We present our progresses towards active photonic circuits based on III-nitride semiconductors epitaxially grown on silicon. We study in particular the critical coupling of lasing InGaN/GaN microdisks to adjacent suspended waveguides.

Published
2019

19. Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities

Author

Jean-Yves Duboz, Xavier Checoury, Fabrice Semond, Moustafa El Kurdi, Thierry Guillet, Philippe Boucaud, Iännis Roland, Stephanie Rennesson, Sébastien Sauvage, Farsane Tabataba-Vakili, Christelle Brimont, Bruno Gayral, Thi-Mo Tran, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), ANR-13-BS10-0010,QUANONIC,Optique quantique et non-linéaire dans des cavités nitrures(2013), ANR-11-IDEX-0003,IPS,Idex Paris-Saclay(2011), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Saclay, and Université Nice Sophia Antipolis (... - 2019) (UNS)

Subjects
010302 applied physics, Materials science, Silicon photonics, Physics and Astronomy (miscellaneous), Silicon, business.industry, chemistry.chemical_element, FOS: Physical sciences, 02 engineering and technology, Physics - Applied Physics, Applied Physics (physics.app-ph), Nitride, 021001 nanoscience & nanotechnology, 01 natural sciences, Crystal, chemistry, Q factor, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Absorption (electromagnetic radiation), Quantum well, Photonic crystal
Abstract

International audience; III-nitride-on-silicon L3 and H2 photonic crystal cavities with resonances down to 315 nm and quality factors up to 1085 at 337 nm have been demonstrated. The reduction of quality factor (Q) with decreasing wavelength is investigated. Besides the QW absorption below 340 nm a noteworthy contribution is attributed to the residual absorption present in thin AlN layers grown on silicon, as measured by spectroscopic ellipsometry. This residual absorption ultimately limits the Q factor to around 250 at 300 nm when no active layer is present.

Published
2019
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20. Lifetime Measurements Well below the Optical Diffraction Limit

Author

Sophie Meuret, T. Auzelle, Mathieu Kociak, Bruno Gayral, Luiz H. G. Tizei, Bruno Daudin, Rudee Songmuang, Laboratoire de Physique des Solides (LPS), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), CEA Tech en régions (CEA-TECH-Reg), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)

Subjects
Materials science, Physics::Optics, Cathodoluminescence, 02 engineering and technology, 01 natural sciences, 7. Clean energy, law.invention, Optics, law, 0103 physical sciences, Electrical and Electronic Engineering, 010306 general physics, Quantum, ComputingMilieux_MISCELLANEOUS, Quantum well, Diode, [PHYS]Physics [physics], business.industry, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Interferometry, Excited state, Cathode ray, Optoelectronics, 0210 nano-technology, business, Biotechnology, Light-emitting diode
Abstract

The dependence of excited electron–hole state properties on the size of their host semiconducting nanostructures is the seed for a plethora of applications such as light-emitting diodes (LEDs) and photovoltaic cells. However, the inability of state-of-the art, diffraction-limited optical techniques to probe lifetime variations at the scale of individual quantum emitters precludes the full understanding of the nanostructures’ optical properties. Here, we demonstrate the measurement of the individual lifetimes of quantum emitters a few angstroms thick separated by only a few nanometers, lifting the ambiguities usually faced by diffraction-limited techniques. This relies on the ability to monitor with subnanometer precision a fast electron beam that triggers extremely localized cathodoluminescence signals further analyzed through intensity interferometry (spatially resolved time-correlated cathodoluminescence, SRTC-CL). We demonstrate SRTC-CL to be a true nanometer counterpart of time-resolved photoluminesce...

Published
2016

21. Imaging of Photonic Crystal Localized Modes through Third-Harmonic Generation

Author

Christelle Brimont, Xavier Checoury, Bruno Gayral, Y. Zeng, Iännis Roland, Sébastien Sauvage, Philippe Boucaud, Moustafa El Kurdi, Thierry Guillet, Fabrice Semond, Zheng Han, Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), ANR-13-BS10-0010,QUANONIC,Optique quantique et non-linéaire dans des cavités nitrures(2013), and Université Nice Sophia Antipolis (1965 - 2019) (UNS)

Subjects
Materials science, Physics::Optics, 02 engineering and technology, 01 natural sciences, law.invention, third-harmonic generation, 010309 optics, Optics, Optical microscope, law, 0103 physical sciences, Microscopy, Electrical and Electronic Engineering, Photonic crystal, III-nitride semiconductors, business.industry, Resolution (electron density), 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], Harmonics, Excited state, Optoelectronics, Photonics, subwavelength imaging, 0210 nano-technology, business, photonic crystal, Excitation, Biotechnology
Abstract

International audience; We demonstrate high-spatial resolution imaging of localized cavity modes through third-harmonic frequency conversion. The experiments are performed with a III-nitrideon-silicon photonic platform. The resonant cavities are formed within suspended two-dimensional photonic crystals and are excited with a continuous-wave excitation around 1550 nm. The III-nitride materials (GaN and AlN) are transparent for both pump and harmonics. The third-harmonic nonlinear process allows one to indirectly observe the fundamental confined cavity mode with spatial profiles equivalent to those usually obtained by local probe microscopy techniques such as scanning near-field optical microscopy. An excellent agreement is obtained between the measured polarization-resolved third harmonic emission patterns and those calculated through the third-order nonlinear polarization. We show that the spatial profiles of the radiated patterns are strongly dependent on defocusing, thus highlighting the strong sensitivity of the imaging.

Published
2016

22. Quantum Dot-Like Behavior of Compositional Fluctuations in AlGaN Nanowires

Author

Bruno Daudin, Matthias Belloeil, Bruno Gayral, Gayral, Bruno, Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
Optics and Photonics, Materials science, Scanning electron microscope, Alloy, Nanowire, Gallium, Bioengineering, 02 engineering and technology, engineering.material, Mole fraction, 01 natural sciences, Quantum Dots, 0103 physical sciences, General Materials Science, Aluminum Compounds, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Condensed matter physics, Nanowires, Mechanical Engineering, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Nanostructures, Photon correlation, Quantum dot, Kinetic growth, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Microscopy, Electron, Scanning, engineering, 0210 nano-technology, Molecular beam epitaxy
Abstract

We report on the structural and optical properties of AlxGa(1-x)N nanowire sections grown by plasma-assisted molecular beam epitaxy on GaN nanowire bases used as a template. Based on a combination of scanning electron microscopy, microphotoluminescence, time-resolved microphotoluminescence, and photon correlation experiments, it is shown that compositional fluctuations in AlxGa(1-x)N sections associated with carrier localization optically behave as quantum dots. Moreover, most of the micro-optical properties of such fluctuations are demonstrated to be very little dependent on kinetic growth parameters such as AlxGa(1-x)N growth temperature and AlN molar fraction in the alloy, which govern the macrostructural properties of AlxGa(1-x)N sections.

Published
2016

23. Green electroluminescence from radial m -plane InGaN quantum wells grown on GaN wire sidewalls by metal–organic vapor phase epitaxy

Author

Lorenzo Mancini, Eric Gautier, Joël Eymery, Akanksha Kapoor, Christophe Durand, Maria Tchernycheva, Nan Guan, Martin Vallo, Bruno Gayral, Lorenzo Rigutti, François Vurpillot, François H. Julien, Agnes Messanvi, Catherine Bougerol, Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Modélisation et Exploration des Matériaux (MEM), ANR-14-CE26-0020,PLATOFIL,PLAteforme phoTOnique à base de nanoFILs(2014), ANR-13-JS10-0001,TAPOTER,Sonde atomique tomographique et spectroscopie optique: une approche couplée(2013), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), European Project: 639052,H2020,ERC-2014-STG,Nano Harvest(2015), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Nanostructures et Rayonnement Synchrotron (NRS ), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
Materials science, Nanowire, 02 engineering and technology, Atom probe, Electroluminescence, Epitaxy, 01 natural sciences, law.invention, MOVPE, law, 0103 physical sciences, Metalorganic vapour phase epitaxy, Electrical and Electronic Engineering, Quantum well, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, green emission, LED, 021001 nanoscience & nanotechnology, nitride semiconductors, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Wavelength, nanowires, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business, Biotechnology, Light-emitting diode
Abstract

International audience; We demonstrate green emission from InGaN/ GaN multiple quantum wells (MQWs) grown on m-plane sidewalls of GaN wires. To tune the emission wavelength, InGaN radial wells were grown by metal−organic vapor phase epitaxy (MOVPE) at decreasing temperatures ranging from 710 down to 620 °C to increase the In incorporation. A comprehensive investigation combining structural and optical analyses demonstrates that the green emission from the nonpolar m-plane wire sidewalls is achieved for the wells grown at 650 °C (namely, for 2.7 nm thick wells sandwiched by 11 nm thick GaN barriers). The observed emission wavelength of 500−550 nm is consistent with an average In-content of MQWs measured in the range of 24 ± 4% by energy dispersive X-ray (EDX) and atom probe tomography (APT). Single wires were electrically contacted and the green electroluminescence from m-plane facets was established on single wire-LED devices. This demonstrates the possibility to produce green emitters with core−shell wire LEDs elaborated by industrial and scalable MOVPE technique.

Published
2018

24. Self-Assembled UV Photodetector Made by Direct Epitaxial GaN Growth on Graphene

Author

Vincent Bouchiat, Bruno Gayral, Jean Dijon, Bérangère Hyot, Timotée Journot, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Systèmes hybrides de basse dimensionnalité (NEEL - HYBRID), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Département des Technologies des NanoMatériaux (DTNM), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Systèmes hybrides de basse dimensionnalité (HYBRID), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de L'Energie Solaire (INES), and Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
010302 applied physics, [PHYS]Physics [physics], Materials science, business.industry, Graphene, Photodetector, Gallium nitride, 02 engineering and technology, Chemical vapor deposition, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, law.invention, Responsivity, chemistry.chemical_compound, Semiconductor, chemistry, law, 0103 physical sciences, Optoelectronics, General Materials Science, Metalorganic vapour phase epitaxy, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

Hybrid systems based on the combination of crystalline bulk semiconductors with 2D crystals are identified as promising heterogeneous structures for new optoelectronic applications. The direct integration of III–V semiconductors on 2D materials is very attractive to make practical devices but the preservation of the intrinsic properties of the underlying 2D materials remains a challenge. In this work, we study the direct epitaxy of self-organized GaN crystals on graphene. We demonstrate that severe metal–organic chemical vapor deposition growth conditions of GaN (chemically aggressive precursors and high temperatures) are not detrimental to the structural quality and the charge carrier mobility of the graphene base plane. Graphene can therefore be used both as an efficient sensitive material and as a substrate for GaN epitaxy to make a self-assembled UV photodetector. A responsivity as high as 2 A W–1 is measured in the UV-A range without any further postprocessing compared to simple deposition of contact...

Published
2018

25. III-nitride on silicon microdisks: electrical injection and bus waveguide side-coupling (Conference Presentation)

Author

Thierry Guillet, Julien Brault, Xavier Checoury, Iännis Roland, Christelle Brimont, Philippe Boucaud, Raffaele Colombelli, Bruno Paulillo, Fabrice Semond, Moustafa El Kurdi, Farsane Tabataba-Vakili, Eric Frayssinet, Benjamin Damilano, Bruno Gayral, and Stephanie Rennesson

Subjects
Materials science, business.industry, Nanophotonics, Laser, law.invention, Optical pumping, law, Q factor, Optoelectronics, Photonics, business, Waveguide, Quantum well, Photonic crystal
Abstract

Group-III-nitride nanophotonics on silicon is a booming field, from the near-IR to the UV spectral range. The main interest of III-nitride nanophotonic circuits is the integration of active structures and laser sources. Laser sources with a small footprint can be obtained with microresonators formed by photonic crystals or microdisks, exhibiting quality factors up to a few thousand down to the UV-C. So far, single microdisk laser devices have been demonstrated, mostly under optical pumping. Combining microdisk lasers under electrical injection with passive devices represents a major challenge in realizing a viable III-nitride nanophotonic platform on silicon. As a first step to realize this goal, we have separately demonstrated electroluminescence from microdisks and side-coupling of microdisks to bus waveguides with outcoupling gratings in the blue spectral range. We have developed the fabrication of electrically injected microdisks with a circular p-contact on top of the disk that is connected to a larger pad via a mechanically stable metal microbridge. Blue electroluminescence is observed under current injection at room temperature. We also demonstrated high Q factor (Q > 2000) WGMs in the blue spectral range from microdisks side-coupled to bus waveguides, as measured from the luminescence of embedded InGaN quantum wells. The WGM resonances are clearly observed through outcoupling gratings following propagation in partially etched waveguides to remove quantum well absorption. Small gaps between microdisks and bus waveguides of around 100 nm are necessary for efficient coupling in the blue spectral range, which represents a major fabrication challenge. We will discuss the progress brought by these building blocks to generate future III-nitride photonic circuits.

Published
2018

26. LEDs for lighting: Basic physics and prospects for energy savings

Author

Bruno Gayral, Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
010302 applied physics, business.industry, General Engineering, Energy Engineering and Power Technology, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, 7. Clean energy, Engineering physics, law.invention, law, 0103 physical sciences, White light, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business, Energy (signal processing), ComputingMilieux_MISCELLANEOUS, Diode, Light-emitting diode
Abstract

In 2014, Isamu Akasaki, Hiroshi Amano, and Shuji Nakamura received the Nobel Prize in Physics for “the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources”. Indeed, in the recent years, Light-Emitting Diodes (LEDs) have progressively made their way to the home lighting market, as well as to other mass markets. This article aims at giving an insight on LEDs physics, on the key inventions that led to the 2014 Nobel Prize and on the prospects for energy savings that LEDs could allow.

Published
2017

27. Ultra-low threshold polariton lasing at room temperature in a GaN membrane microcavity with a zero-dimensional trap

Author

Katerina Tsagaraki, Moïra Hocevar, Bruno Gayral, G. Christmann, Eva Monroy, F. G. Kalaitzakis, Rahul Jayaprakash, Nikos T. Pelekanos, Microelectronics Research Group, IESL-FORTH, P.O. Box 1385, 71110, Heraklion, Greece, University of Crete [Heraklion] (UOC), Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-10-LABX-0051,LANEF,Laboratory of Alliances on Nanosciences - Energy for the Future(2010), and European Project: 237900,EC:FP7:PEOPLE,FP7-PEOPLE-ITN-2008,ICARUS(2009)

Subjects
Materials science, Science, Exciton, Physics::Optics, 02 engineering and technology, 01 natural sciences, 7. Clean energy, Article, law.invention, law, 0103 physical sciences, Polariton, Emission spectrum, 010306 general physics, Saturation (magnetic), ComputingMilieux_MISCELLANEOUS, Quantum well, [PHYS]Physics [physics], Condensed Matter::Quantum Gases, Multidisciplinary, Condensed Matter::Other, business.industry, 021001 nanoscience & nanotechnology, Laser, Semiconductor, Medicine, Optoelectronics, 0210 nano-technology, business, Lasing threshold
Abstract

Polariton lasers are coherent light sources based on the condensation of exciton-polaritons in semiconductor microcavities, which occurs either in the kinetic or thermodynamic (Bose-Einstein) regime. Besides their fundamental interest, polariton lasers have the potential of extremely low operating thresholds. Here, we demonstrate ultra-low threshold polariton lasing at room temperature, using an all-dielectric, GaN membrane-based microcavity, with a spontaneously-formed zero-dimensional trap. The microcavity is fabricated using an innovative method, which involves photo-electrochemical etching of an InGaN sacrificial layer and allows for the incorporation of optimally-grown GaN active quantum wells inside a cavity with atomically-smooth surfaces. The resulting structure presents near-theoretical Q-factors and pronounced strong-coupling effects, with a record-high Rabi splitting of 64 meV at room-temperature. Polariton lasing is observed at threshold carrier densities 2.5 orders of magnitude lower than the exciton saturation density. Above threshold, angle-resolved emission spectra reveal an ordered pattern in k-space, attributed to polariton condensation at discrete levels of a single confinement site. This confinement mechanism along with the high material and optical quality of the microcavity, accounts for the enhanced performance of our polariton laser, and pave the way for further developments in the area of robust room temperature polaritonic devices.

Published
2017

28. III-Nitride on silicon photonic circuits

Author

Farsane Tabataba-Vakili, Thierry Guillet, M. P. De Micheli, Stephanie Rennesson, Sébastien Sauvage, Julien Selles, Xavier Checoury, Iännis Roland, Christelle Brimont, Jean-Yves Duboz, Bruno Gayral, M. El Kurdi, Philippe Boucaud, Y. Zeng, M. Gromovyi, and Fabrice Semond

Subjects
010302 applied physics, Materials science, Silicon photonics, Silicon, business.industry, Photonic integrated circuit, Physics::Optics, chemistry.chemical_element, Gallium nitride, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Yablonovite, Condensed Matter::Materials Science, chemistry.chemical_compound, Resonator, chemistry, 0103 physical sciences, Electronic engineering, Optoelectronics, Photonics, 0210 nano-technology, business, Photonic crystal
Abstract

We present recent progress achieved with III-nitride photonic circuits epitaxially grown on silicon(111). The photonic circuits embed two-dimensional photonic crystals and microdisk resonators coupled to suspended waveguides. We discuss the linear and nonlinear response of the resonators through second and third harmonic generation.

Published
2017

29. Bias-Controlled Spectral Response in GaN/AlN Single-Nanowire Ultraviolet Photodetectors

Author

Martin Eickhoff, Martien Den Hertog, Eva Monroy, Jörg Schörmann, Jonas Lähnemann, Maria Spies, Bruno Gayral, Pascal Hille, Jakub Polaczyński, Matériaux, Rayonnements, Structure (MRS), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-12-JS10-0002,COSMOS,Correlation du microscopie électronique en transmission avec des mesures optique et électrique effectués sur le même nanofils unique(2012), European Project: 278428,EC:FP7:ERC,ERC-2011-StG_20101014,TERAGAN(2012), Matériaux, Rayonnements, Structure (NEEL - MRS), Justus-Liebig-Universität Gießen = Justus Liebig University (JLU), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), and Paul-Drude-Institut für Festkörperelektronik (PDI)

Subjects
Materials science, Superlattice, Nanowire, FOS: Physical sciences, Photodetector, Bioengineering, Applied Physics (physics.app-ph), 02 engineering and technology, medicine.disease_cause, 01 natural sciences, Condensed Matter::Materials Science, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, Scanning transmission electron microscopy, medicine, General Materials Science, Electronic band structure, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Photocurrent, Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, Mechanical Engineering, Materials Science (cond-mat.mtrl-sci), Heterojunction, General Chemistry, Physics - Applied Physics, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business, Ultraviolet, Optics (physics.optics), Physics - Optics
Abstract

We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded GaN/AlN superlattice. The heterostructure dimensions and doping profile were designed in such a way that the application of positive or negative bias leads to an enhancement of the collection of photogenerated carriers from the GaN/AlN superlattice or from the GaN base, respectively, as confirmed by electron beam-induced current measurements. The devices display enhanced response in the ultraviolet A ($\approx$ 330-360 nm) / B ($\approx$ 280-330 nm) spectral windows under positive/negative bias. The result is explained by correlation of the photocurrent measurements with scanning transmission electron microscopy observations of the same single nanowire, and semi-classical simulations of the strain and band structure in one and three dimensions., This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters (2017), copyright (C) American Chemical Society after peer review. To access the final edited and published work see http://doi.org/10.1021/acs.nanolett.7b01118

Published
2017

30. Thin-Wall GaN/InAlN Multiple Quantum Well Tubes

Author

Bruno Gayral, Nicolas Grandjean, Christophe Durand, Jean-Paul Barnes, Catherine Bougerol, Joël Eymery, Jean-François Carlin, Damien Salomon, Raphaël Butté, Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Ecole Polytechnique Fédérale de Lausanne (EPFL), Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), European Synchrotron Radiation Facility (ESRF), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
Materials science, Annealing (metallurgy), Multiple quantum, Bioengineering, quantum dots, UV emission, 02 engineering and technology, Nitride, Epitaxy, 01 natural sciences, MOVPE, 0103 physical sciences, General Materials Science, Metalorganic vapour phase epitaxy, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS]Physics [physics], Nanotubes, business.industry, Mechanical Engineering, Heterojunction, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, nitride semiconductors, multiple quantum wells, Quantum dot, Optoelectronics, 0210 nano-technology, business, Nitride semiconductors
Abstract

Thin-wall tubes composed of nitride semiconductors (III-N compounds) based on GaN/InAlN multiple quantum wells (MQWs) are fabricated by metalorganic vapor-phase epitaxy in a simple and full III-N approach. The synthesis of such MQW-tubes is based on the growth of N-polar c-axis vertical GaN wires surrounded by a coreshell MQW heterostructure followed by in situ selective etching using controlled H-2/NH3 annealing at 1010 degrees C to remove the inner GaN wire part. After this process, well-defined MQW-based tubes having nonpolar m-plane orientation exhibit UV light near 330 nm up to room temperature, consistent with the emission of GaN/InAlN MQWs. Partially etched tubes reveal a quantum-dotlike signature originating from nanosized GaN residuals present inside the tubes. The possibility to fabricate in a simple way thin-wall III-N tubes composed of an embedded MQW-based active region offering controllable optical emission properties constitutes an important step forward to develop new nitride devices such as emitters, detectors or sensors based on tubelike nanostructures.

Published
2017

31. Phase-Matched Second Harmonic Generation With On-Chip GaN-On-Si Microdisks

Author

Farsane Tabataba-Vakili, M. P. De Micheli, Xavier Checoury, Bruno Gayral, Jean-Yves Duboz, Christelle Brimont, M. Gromovyi, Philippe Boucaud, Fabrice Semond, Sébastien Sauvage, Thierry Guillet, M. El Kurdi, S. Rennisson, Iännis Roland, and Y. Zeng

Subjects
Materials science, business.industry, Q factor, Energy conversion efficiency, Photonic integrated circuit, Harmonic, Phase (waves), Physics::Optics, Second-harmonic generation, Optoelectronics, Photonics, Whispering-gallery wave, business
Abstract

We demonstrate phase-matched second harmonic generation in GaN microdisks integrated on a photonic circuit on silicon. Phase matching between TM modes is evidenced by varying the disk diameter by steps of 8 nm, one thousand smaller than their diameter. An enhanced conversion efficiency is obtained under cw near infrared excitation when both pump and harmonic modes are resonant with whispering gallery modes (Q factors around 10000) and orbital momentum is conserved (Δm = 0 where m is the azimuthal number). We will compare the second harmonic conversion efficiency in GaN and AlN microdisks to the one obtained with other III-V materials.

Published
2017

33. III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

Author

Thierry Guillet, Iännis Roland, Julien Selles, M. El Kurdi, V. Crepel, Benjamin Damilano, Fabrice Semond, Philippe Boucaud, Bruno Gayral, Meletios Mexis, Xavier Checoury, Stephanie Rennesson, Christelle Brimont, Mathieu Leroux, Matière et Systèmes Complexes (MSC (UMR_7057)), Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), Université Côte d'Azur (UCA)-Université Côte d'Azur (UCA)-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-13-BS10-0010,QUANONIC,Optique quantique et non-linéaire dans des cavités nitrures(2013), Centre National de la Recherche Scientifique (CNRS)-Université Paris Diderot - Paris 7 (UPD7), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Matière et Systèmes Complexes (MSC), and Université Nice Sophia Antipolis (1965 - 2019) (UNS)

Subjects
Materials science, Physics and Astronomy (miscellaneous), Physics::Optics, 02 engineering and technology, 7. Clean energy, 01 natural sciences, law.invention, Optical pumping, Resonator, Condensed Matter::Materials Science, Optics, law, 0103 physical sciences, 010302 applied physics, business.industry, Quantum-confined Stark effect, Wide-bandgap semiconductor, 021001 nanoscience & nanotechnology, Laser, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], Optoelectronics, Photonics, 0210 nano-technology, business, Ternary operation, Lasing threshold
Abstract

We present a series of microdisk lasers realized within the same GaN-on-Si photonic platform scheme, and operating at room temperature under pulsed optical pumping over a broad spectral range extending over λ = 275 nm–470 nm. The III-nitride microdisks embed either binary GaN/AlN multiple quantum wells (MQWs) for UV operation, or ternary InGaN/GaN MQWs for violet and blue operation. This demonstrates the versatility of this nitride-on-silicon platform, and the realization on this platform of efficient active layers for lasing action over a 200 nm broad UV to visible spectral range. We probe the lasing threshold carrier density over the whole spectral range and found that it is similar whatever the emission wavelength for these Q > 1000 microdisk resonators with a constant material quality until quantum confined Stark effect takes over. The threshold is also found independent of microdisk diameters from 3 to 12 μm, with a β factor intermediate between the one of vertical cavity lasers and the one of small modal volume “thresholdless” lasers.

Published
2016

34. Chemical composition fluctuations and strain relaxation in InGaN nanowires: The role of the metal/nitrogen flux ratio

Author

Catherine Bougerol, Matthias Belloeil, Bruno Daudin, Bruno Gayral, Pierre-Henri Jouneau, Xin Zhang, Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
Materials science, Photoluminescence, Analytical chemistry, Nanowire, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, Metal, Condensed Matter::Materials Science, 0103 physical sciences, General Materials Science, Spectroscopy, Chemical composition, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Strain (chemistry), Mechanical Engineering, Relaxation (NMR), 021001 nanoscience & nanotechnology, Condensed Matter Physics, Nitrogen, chemistry, Mechanics of Materials, Chemical physics, visual_art, visual_art.visual_art_medium, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology
Abstract

The chemical composition fluctuations of InGaN nanowires are studied by a combination of Energy Dispersive X-ray spectroscopy and photoluminescence spectroscopy. It is demonstrated that these fluctuations are linked to the elastic strain relaxation mechanism affecting InGaN sections grown on GaN nanowires. It is further shown that the elastic strain relaxation mechanism depends itself on the growth conditions, in particular on the effective metal/active nitrogen flux ratio. As a consequence of the presence of chemical composition fluctuations, wide photoluminescence spectra are observed, associated with a marked carrier localization.

Published
2016

35. Phase-matched second harmonic generation with on-chip GaN-on-Si microdisks

Author

M. P. De Micheli, Sébastien Sauvage, Philippe Boucaud, Jean-Yves Duboz, M. Gromovyi, Xavier Checoury, Iännis Roland, Fabrice Semond, M. El Kurdi, Thierry Guillet, Bruno Gayral, Y. Zeng, Christelle Brimont, Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de physique de la matière condensée (LPMC), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS), ANR-13-BS10-0010,QUANONIC,Optique quantique et non-linéaire dans des cavités nitrures(2013), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), Université Nice Sophia Antipolis (... - 2019) (UNS), Institut de Physique de Nice (INPHYNI), Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)-Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA), ANR-11-IDEX-0003,IPS,Idex Paris-Saclay(2011), and Centre National de la Recherche Scientifique (CNRS)-Université Nice Sophia Antipolis (... - 2019) (UNS)

Subjects
Materials science, Silicon, Phase (waves), chemistry.chemical_element, Physics::Optics, Gallium nitride, 02 engineering and technology, 01 natural sciences, Article, [SPI.MAT]Engineering Sciences [physics]/Materials, 010309 optics, chemistry.chemical_compound, 0103 physical sciences, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Multidisciplinary, business.industry, Second-harmonic generation, 021001 nanoscience & nanotechnology, chemistry, Excited state, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Continuous wave, Optoelectronics, Whispering-gallery wave, Photonics, 0210 nano-technology, business
Abstract

We demonstrate phase-matched second harmonic generation in gallium nitride on silicon microdisks. The microdisks are integrated with side-coupling bus waveguides in a two-dimensional photonic circuit. The second harmonic generation is excited with a continuous wave laser in the telecom band. By fabricating a series of microdisks with diameters varying by steps of 8 nm, we obtain a tuning of the whispering gallery mode resonances for the fundamental and harmonic waves. Phase matching is obtained when both resonances are matched with modes satisfying the conservation of orbital momentum, which leads to a pronounced enhancement of frequency conversion.

Published
2016

36. Near-infrared III-nitride-on-silicon nanophotonic platform with microdisk resonators

Author

Christelle Brimont, M. Gromovyi, M. P. De Micheli, Xavier Checoury, Fabrice Semond, Philippe Boucaud, Iännis Roland, M. El Kurdi, Bruno Gayral, Y. Zeng, Jean-Yves Duboz, Sébastien Sauvage, Thierry Guillet, Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Institut Non Linéaire de Nice Sophia-Antipolis (INLN), Centre National de la Recherche Scientifique (CNRS)-Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Université Côte d'Azur (UCA), Laboratoire de physique de la matière condensée (LPMC), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA), ANR-13-BS10-0010,QUANONIC,Optique quantique et non-linéaire dans des cavités nitrures(2013), Université Nice Sophia Antipolis (1965 - 2019) (UNS), and COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Silicon, business.industry, Photonic integrated circuit, Nanophotonics, Second-harmonic generation, Resonance, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Atomic and Molecular Physics, and Optics, law.invention, 010309 optics, Resonator, Optics, chemistry, law, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], 0103 physical sciences, Optoelectronics, Whispering-gallery wave, 0210 nano-technology, business, Waveguide
Abstract

International audience; We have developed a nanophotonic platform with microdisks using epitaxial III-nitride materials on silicon. The two-dimensional platform consists of suspended waveguides and mushroom-type microdisks as resonators side-coupled with a bus waveguide. Loaded quality factors up to 80000 have been obtained in the near-infrared spectral range for microdisk diameters between 8 and 15 μm. We analyze the dependence of the quality factors as a function of coupling efficiency. We have performed continuous-wave second harmonic generation experiments in resonance with the whispering gallery modes supported by the microdisks.

Published
2016

37. GaN Rods Grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE Core/Shell Structures

Author

Amélie Dussaigne, Geoffrey Avit, Agnès Trassoudaine, Yamina André, Evelyne Gil, Dominique Castelluci, Pierre Ferret, Stéphanie Gaugiran, Bruno Gayral, Yann Lee, Elissa Roche, Catherine Bougerol, M. Reda Ramdani, Institut Pascal (IP), SIGMA Clermont (SIGMA Clermont)-Université Clermont Auvergne [2017-2020] (UCA [2017-2020])-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), SIGMA Clermont (SIGMA Clermont)-Centre National de la Recherche Scientifique (CNRS)-Université Clermont Auvergne [2017-2020] (UCA [2017-2020]), and Université Nice Sophia Antipolis (... - 2019) (UNS)

Subjects
010302 applied physics, Materials science, business.industry, Exciton, Shell (structure), 02 engineering and technology, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Cladding (fiber optics), Epitaxy, 01 natural sciences, Silane, Core (optical fiber), chemistry.chemical_compound, chemistry, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, General Materials Science, Metalorganic vapour phase epitaxy, 0210 nano-technology, business, Luminescence, ComputingMilieux_MISCELLANEOUS
Abstract

Selective area growth hydride vapor phase epitaxy (SAG-HVPE) and metal organic vapor phase epitaxy (MOVPE) processes are coupled for the synthesis of high quality c-axis InGaN/GaN core/shell structures. The core consists of high aspect ratio GaN rods grown by SAG-HVPE on patterned N-polar AlN on Si(100) substrates. The shell is grown by MOVPE which provides abrupt InGaN/GaN multiquantum wells (MQWs). Microphotoluminescence (μ-PL) analysis performed on the HVPE GaN core exhibit a narrow emission line of 3 meV in line width associated with the neutral-donor bound exciton revealing the excellent optical properties of the GaN material. For the core/shell wire geometry, the silane free HVPE process ensured the whole lateral cladding of the core. The hybrid HVPE core/MOVPE shell structures exhibit high optical quality without yellow luminescence.

Published
2016

38. InGaN nanowires with high InN molar fraction: growth, structural and optical properties

Author

Bruno Daudin, X. Biquard, Hugo Lourenço-Martins, Jean-Luc Rouvière, Xin Zhang, Benedikt Haas, T. Auzelle, Mathieu Kociak, Bruno Gayral, D. Jalabert, Pierre-Henri Jouneau, Catherine Bougerol, Sophie Meuret, Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de Physique des Solides (LPS), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Nanostructures et Rayonnement Synchrotron (NRS ), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), and Nanophysique et Semiconducteurs (NEEL - NPSC)

Subjects
Nanostructure, Photoluminescence, Materials science, Annealing (metallurgy), Nanowire, Bioengineering, Nanotechnology, 02 engineering and technology, Mole fraction, Epitaxy, 01 natural sciences, 0103 physical sciences, General Materials Science, Electrical and Electronic Engineering, 010302 applied physics, [PHYS]Physics [physics], InGaN, business.industry, Nanowires, Mechanical Engineering, Extended X-Ray Absorption Fine Structure, Heterojunction, General Chemistry, 021001 nanoscience & nanotechnology, Mechanics of Materials, Localization, Optoelectronics, Nano-Cathodoluminescence, Molecular Beam Epitaxy, 0210 nano-technology, business, Molecular beam epitaxy, Light-Emitting-Diodes
Abstract

International audience; The structural and optical properties of axial GaN/InGaN/GaN nanowire heterostructures with high InN molar fractions grown by molecular beam epitaxy have been studied at the nanoscale by a combination of electron microscopy, extended x-ray absorption fine structure and nanocathodoluminescence techniques. InN molar fractions up to 50% have been successfully incorporated without extended defects, as evidence of nanowire potentialities for practical device realisation in such a composition range. Taking advantage of the N-polarity of the self-nucleated GaN NWs grown by molecular beam epitaxy on Si(111), the N-polar InGaN stability temperature diagram has been experimentally determined and found to extend to a higher temperature than its metal-polar counterpart. Furthermore, annealing of GaN-capped InGaN NWs up to 800 degrees C has been found to result in a 20 times increase of photoluminescence intensity, which is assigned to point defect curing.

Published
2016

39. Deep-UV nitride-on-silicon microdisk lasers

Author

Guillaume Cassabois, Christelle Brimont, Thierry Guillet, Meletios Mexis, Iännis Roland, Y. Zeng, Xavier Checoury, Pierre Valvin, Fabrice Semond, Philippe Boucaud, Bruno Gayral, Julien Selles, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-13-BS10-0010,QUANONIC,Optique quantique et non-linéaire dans des cavités nitrures(2013), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), and Université Nice Sophia Antipolis (... - 2019) (UNS)

Subjects
010302 applied physics, Multidisciplinary, Materials science, Silicon, business.industry, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), Nitride, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, Article, Active layer, chemistry, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], 0103 physical sciences, Sapphire, Optoelectronics, Spontaneous emission, Photonics, 0210 nano-technology, business, Quantum well
Abstract

Deep ultra-violet semiconductor lasers have numerous applications for optical storage and biochemistry. Many strategies based on nitride heterostructures and adapted substrates have been investigated to develop efficient active layers in this spectral range, starting with AlGaN quantum wells on AlN substrates and more recently sapphire and SiC substrates. Here we report an efficient and simple solution relying on binary GaN/AlN quantum wells grown on a thin AlN buffer layer on a silicon substrate. This active region is embedded in microdisk photonic resonators of high quality factors and allows the demonstration of a deep ultra-violet microlaser operating at 275 nm at room temperature under optical pumping, with a spontaneous emission coupling factor β = (4 ± 2) 10−4. The ability of the active layer to be released from the silicon substrate and to be grown on silicon-on-insulator substrates opens the way to future developments of nitride nanophotonic platforms on silicon.

Published
2016

40. Growth, structural and optical properties of GaN/AlN and GaN/GaInN nanowire heterostructures

Author

Cédric Leclere, D. Camacho, Bruno Gayral, Ana Cros, Karine Hestroffer, G. Tourbot, Hubert Renevier, Bruno Daudin, Catherine Bougerol, Yann-Michel Niquet, Diane Sam-Giao, and Rafael Mata

Subjects
Materials science, Photoluminescence, business.industry, Relaxation (NMR), Nucleation, Nanowire, Shell (structure), Heterojunction, Physics and Astronomy(all), Xrays diffraction, symbols.namesake, nanowires, molecular beam epitaxy, Raman spectroscopy, symbols, III nitride wide gap semiconductors, Optoelectronics, photoluminescence, business, high resolution electron microscopy, Molecular beam epitaxy
Abstract

After discussing the GaN NW nucleation issue, we will present the structural properties of axial and radial (i.e. core/shell) GaN/AlN NW heterostructures and adress the issue of critical thickness during the growth of such heterostructures. Next, we will present the growth of InGaN NWs on a GaN NW base. It will be shown that the morphology and structural properties of the InGaN NW sections depend on the In content: for high In content a flat top is observed and plastic relaxation is occuring, with mismatch dislocations formed at the InGaN/GaN interface. By contrast, for In content below 25% InGaN NWs exhibit a pencil-like shape assigned to a purely elastic strain relaxation process, without formation of dislocations. Such a strain relaxation process was found to be associated with the spontaneous formation of an InGaN/GaN core-shell heterostructure. As concerns optical properties, it will be shown that the purely elastic relaxation process is associated with a marked In clustering. As a consequence, for samples with a 17% nominal In content, data were found to exhibit a S-shape characteristic of localization, with a minimum around 110K. By contrast, for a 40% In content PL data suggest that localization is much weaker. Finally, a growth model of InGaN/GaN heterostructures will be proposed.

Published
2012
Full Text
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41. Optical Spectroscopy at High Spatial Resolution with Fast Electrons

Author

Anna Tararan, Yung-Chang Lin, Kazu Suenaga, Luiz Fernando Zagonel, Mathieu Kociak, Bruno Gayral, François Treussart, Noémie Bonnet, Bruno Daudin, Odile Stéphan, Romain Brourellier, Luiz H. G. Tizei, Alberto Zobelli, and Sophie Meuret

Subjects
Materials science, business.industry, 02 engineering and technology, Electron, 021001 nanoscience & nanotechnology, 01 natural sciences, Optics, 0103 physical sciences, High spatial resolution, 010306 general physics, 0210 nano-technology, Spectroscopy, business, Instrumentation
Published
2017

42. Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors

Author

Maria Spies, Jakub Polaczyński, Akhil Ajay, Dipankar Kalita, Minh Anh Luong, Jonas Lähnemann, Bruno Gayral, Martien I den Hertog, Eva Monroy, Matériaux, Rayonnements, Structure (MRS), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Matériaux, Rayonnements, Structure (NEEL - MRS)

Subjects
Nanowire, FOS: Physical sciences, Physics::Optics, Photodetector, Bioengineering, Optical power, Applied Physics (physics.app-ph), 02 engineering and technology, 01 natural sciences, Condensed Matter::Materials Science, Electric field, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, General Materials Science, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Physics, Photocurrent, Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, Mechanical Engineering, Materials Science (cond-mat.mtrl-sci), Linearity, Heterojunction, Physics - Applied Physics, General Chemistry, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Flexible electronics, Mechanics of Materials, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business
Abstract

Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their photoresponse scales sublinearly with the optical power. Here, we present a study of single-nanowire photodetectors displaying a linear response to ultraviolet illumination. Their structure consists of a GaN nanowire incorporating an AlN/GaN/AlN heterostructure, which generates an internal electric field. The activity of the heterostructure is confirmed by the rectifying behavior of the current-voltage characteristics in the dark, as well as by the asymmetry of the photoresponse in magnitude and linearity. Under reverse bias (negative bias on the GaN cap segment), the detectors behave linearly with the impinging optical power when the nanowire diameter is below a certain threshold ($\approx$ 80 nm), which corresponds to the total depletion of the nanowire stem due to the Fermi level pinning at the sidewalls. In the case of nanowires that are only partially depleted, their nonlinearity is explained by a nonlinear variation of the diameter of their central conducting channel under illumination., This is the accepted manuscript version of an article that appeared in Nanotechnology. The CC BY-NC-ND 3.0 license applies, see https://creativecommons.org/licences/by-nc-nd/3.0

Published
2018

43. Optical properties of GaN/AlN quantum dots

Author

Bruno Gayral, Pierre Lefebvre, Groupe d'étude des semiconducteurs (GES), Centre National de la Recherche Scientifique (CNRS)-Université Montpellier 2 - Sciences et Techniques (UM2), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ACI BUGATI, and Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Photoluminescence, Condensed matter physics, Aluminium nitride, Oscillator strength, Exciton, General Engineering, Energy Engineering and Power Technology, Gallium nitride, 02 engineering and technology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, 01 natural sciences, Condensed Matter::Materials Science, chemistry.chemical_compound, chemistry, Quantum dot, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], Phase (matter), 0103 physical sciences, 010306 general physics, 0210 nano-technology, Wurtzite crystal structure
Abstract

We present here a review of the peculiar optical properties of GaN/AlN quantum dots. These systems show unusually large exciton binding energies and band-offsets. Moreover, when grown along the (0001) axis in the wurtzite phase, the optical properties are dominated by huge on-axis internal electric fields, leading to a very low oscillator strength and complex dynamical behavior. It is also possible to grow GaN quantum dots in the cubic phase or along nonpolar axis of the wurtzite cell. We discuss properties of ensembles of quantum dots, as well as of single quantum dots studied by micro-photoluminescence. To cite this article: P. Lefebvre, B. Gayral, C. R. Physique 9 (2008).

Published
2008

44. Exciton and Biexciton Luminescence from Single GaN/AlN Quantum Dots in Nanowires

Author

Bruno Gayral, R. Songmuang, Bruno Daudin, Julien Renard, and Catherine Bougerol

Subjects
Luminescence, Exciton, Binding energy, Nanowire, Gallium, Bioengineering, Gallium nitride, Condensed Matter::Materials Science, chemistry.chemical_compound, Microscopy, Electron, Transmission, Quantum Dots, General Materials Science, Aluminum Compounds, Biexciton, Physics, Nanowires, business.industry, Spectrum Analysis, Mechanical Engineering, General Chemistry, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Condensed Matter Physics, chemistry, Quantum dot, Optoelectronics, business, Excitation
Abstract

We present a microphotoluminescence study of single GaN/AlN quantum dots embedded in single nanowires. At low excitation power, single exciton lines with full width at half-maximum as narrow as 1 meV are observed. The study of the excitation power dependence of the emission allows us to identify the biexciton transitions with binding energies ranging from 20 to 40 meV.

Published
2008

45. Room Temperature UV-C Lasers with Nitride Microdisks on Silicon

Author

Christelle Brimont, Guillaume Cassabois, Meletios Mexis, Xavier Checoury, J. Seiles, Bruno Gayral, Y. Zeng, Fabrice Semond, Iännis Roland, Thierry Guillet, and Philippe Boucaud

Subjects
Materials science, Silicon, business.industry, chemistry.chemical_element, Substrate (electronics), Nitride, chemistry, Quantum dot laser, Physical vapor deposition, Optoelectronics, Whispering-gallery wave, business, Lasing threshold, Quantum well
Abstract

We demonstrate room temperature lasing in the UV-C spectral range (−275 nm) with nitride microdisks. The nitride materials are directly grown on a silicon substrate. The active region consists of ultra-thin GaN/AIN quantum wells and is a promising alternative to the most investigated designs based on AlGaN quantum wells grown on complex buffer layers.

Published
2015

46. Second Harmonic Generation In a GaN Photonic Crystal Cavity on Silicon

Author

Philippe Boucaud, Xavier Checoury, Fabrice Semond, Iännis Roland, Zheng Han, M. El Kurdi, Meletios Mexis, Y. Zeng, Bruno Gayral, Christelle Brimont, Thierry Guillet, and Sébastien Sauvage

Subjects
Materials science, Silicon, business.industry, Physics::Optics, Nonlinear optics, Second-harmonic generation, chemistry.chemical_element, Gallium nitride, chemistry.chemical_compound, Optics, chemistry, High harmonic generation, Continuous wave, Optoelectronics, Surface second harmonic generation, business, Photonic crystal
Abstract

We report on second harmonic generation in a free-standing gallium nitride photonic crystal cavity fabricated on a silicon substrate. The cavity is resonant at 1577 nm and the harmonic conversion is obtained with a continuous wave laser. High resolution spatial imaging of the second harmonic field allows us to make the correlation between the harmonic emission pattern and the dominating second order polarization P z .

Published
2015

47. GaN/AlGaN superlattices for optoelectronics in the mid-infrared

Author

D. Jalabert, Hugues Mank, Le Si Dang, F. H. Julien, Sylvain Monnoye, Eva Monroy, Jean-Michel Gérard, Edith Bellet-Amalric, Fabien Guillot, Bruno Gayral, and Maria Tchernycheva

Subjects
Quenching, education.field_of_study, Photoluminescence, Condensed matter physics, Chemistry, Superlattice, Population, Electronic structure, Condensed Matter Physics, Epitaxy, Electronic, Optical and Magnetic Materials, Excited state, Electric field, education
Abstract

In this work we discuss the optical properties of a GaN/Al 0.11 Ga 0.89 N multiple-quantum-well structure grown on 4H-SiC by plasma-assisted molecular-beam epitaxy. Photoluminescence lines related to the fundamental and excited electronic levels are identified, in good agreement with simulations of the electronic structure. Temperature dependence studies reveal an anomalous behaviour with quenching of the e 1 -hh 1 while the e 2 -hh 1 line becomes dominant at room temperature. This behaviour could be explained by the increasing thermal population of the e 2 state and the higher radiative efficiency of the e 2 -hh 1 transition compared to the e 1 -hh 1 transition due to the intense electric field in the well.

Published
2006

48. GaN quantum dots grown on non‐polar a‐plane SiC by plasma‐assisted molecular beam epitaxy

Author

Edith Bellet-Amalric, S. Founta, C. Moisson, T. Andreev, Henri Mariette, Bruno Gayral, Fabian Rol, and Bruno Daudin

Subjects
Physics::Computational Physics, Materials science, Photoluminescence, Condensed matter physics, Plane (geometry), Cathodoluminescence, Heterojunction, Plasma, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Condensed Matter::Materials Science, Quantum dot, Electric field, Physics::Chemical Physics, Molecular beam epitaxy
Abstract

We report on the growth of GaN quantum dots on AlN grown on (11-20) 6H-SiC. It is shown that the Stranski-Krastanow growth mode of GaN on this surface results in the formation of GaN quantum dots aligned along [1-100]. Their morphology and optical properties were studied as a function of GaN coverage. The cathodoluminescence of the dots was observed above the GaN gap energy, as an indication that the electric field is greatly reduced in these non-polar heterostructures. The persistence of photoluminescence intensity as a function of temperature was observed, as a signature of carrier localization inside the quantum dots.

Published
2005

49. Study of isolated cubic GaN quantum dots by low-temperature cathodoluminescence

Author

F. Enjalbert, E. Martinez-Guerrero, S. Founta, Bruno Daudin, J.P. Garayt, Henri Mariette, Bruno Gayral, Jean-Michel Gérard, L. Ferlazzo, R.T. Cox, Le Si Dang, Fabian Rol, Daniel Araujo, Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Material Science Dept. Univ Cadix, Laboratoire de Spectrométrie Physique (LSP), and Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], Materials science, Condensed matter physics, Sideband, Phonon, Exciton, Dephasing, Charge (physics), Cathodoluminescence, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Condensed Matter::Materials Science, Quantum dot, Spectroscopy
Abstract

We report single dot spectroscopy of cubic GaN/AlN self-assembled quantum dots. Typical linewidths of the zero-phonon line between 2 and 8 meV are observed and interpreted in terms of charge fluctuations around a given quantum dot. The phonon sideband contribution in this emission, even at low temperature, reveals the importance of the acoustic phonon broadening mechanism which controls the exciton dephasing and may impose the real limits to the optical properties of GaN single QDs emission.

Published
2005

50. Cavity-quantum electrodynamics with quantum dots

Author

Alper Kiraz, C. Reese, Bruno Gayral, Lidong Zhang, Brian D. Gerardot, Pierre Petroff, Atac Imamoglu, Winston V. Schoenfeld, and E.L. Hu

Subjects
Quantum optics, Physics, Photon, Physics and Astronomy (miscellaneous), Condensed matter physics, business.industry, Cavity quantum electrodynamics, Physics::Optics, Purcell effect, Atomic and Molecular Physics, and Optics, Quantum dot, Electro-absorption modulator, Photonics, business, Photonic crystal
Abstract

Semiconductor quantum dots (QDs) have emerged as promising candidates for studying quantum optical phenomena. In particular, cavity-quantum electrodynamics effects can be investigated using a single QD embedded inside a photonic nanostructure, where both the carriers and photons are confined within sub-micron length scales in all three dimensions. Since QD location inside the cavity is fixed by the growth, this system is free of the stringent trapping requirements that limit its atomic counterpart. The possibility of fabricating photonic nanostructures with ultra-small optical-mode volumes and long photon lifetimes enhances the prospects for applications in quantum information processing.

Published
2003

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