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Deep-UV nitride-on-silicon microdisk lasers
- Source :
- Scientific Reports, Scientific Reports, 2016, 6, pp.21650. ⟨10.1038/srep21650⟩, Scientific Reports, Nature Publishing Group, 2016, 6, pp.21650. ⟨10.1038/srep21650⟩
- Publication Year :
- 2016
- Publisher :
- Springer Science and Business Media LLC, 2016.
-
Abstract
- Deep ultra-violet semiconductor lasers have numerous applications for optical storage and biochemistry. Many strategies based on nitride heterostructures and adapted substrates have been investigated to develop efficient active layers in this spectral range, starting with AlGaN quantum wells on AlN substrates and more recently sapphire and SiC substrates. Here we report an efficient and simple solution relying on binary GaN/AlN quantum wells grown on a thin AlN buffer layer on a silicon substrate. This active region is embedded in microdisk photonic resonators of high quality factors and allows the demonstration of a deep ultra-violet microlaser operating at 275 nm at room temperature under optical pumping, with a spontaneous emission coupling factor β = (4 ± 2) 10−4. The ability of the active layer to be released from the silicon substrate and to be grown on silicon-on-insulator substrates opens the way to future developments of nitride nanophotonic platforms on silicon.
- Subjects :
- 010302 applied physics
Multidisciplinary
Materials science
Silicon
business.industry
chemistry.chemical_element
02 engineering and technology
Substrate (electronics)
Nitride
021001 nanoscience & nanotechnology
7. Clean energy
01 natural sciences
Article
Active layer
chemistry
[PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]
0103 physical sciences
Sapphire
Optoelectronics
Spontaneous emission
Photonics
0210 nano-technology
business
Quantum well
Subjects
Details
- ISSN :
- 20452322
- Volume :
- 6
- Database :
- OpenAIRE
- Journal :
- Scientific Reports
- Accession number :
- edsair.doi.dedup.....169f32a2daa5104c774af3d1458fc5e8