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Thin-Wall GaN/InAlN Multiple Quantum Well Tubes
- Source :
- Nano Letters, Nano Letters, 2017, 17 (6), pp.3347-3355. ⟨10.1021/acs.nanolett.6b04852⟩, Nano Letters, American Chemical Society, 2017, 17 (6), pp.3347-3355. ⟨10.1021/acs.nanolett.6b04852⟩
- Publication Year :
- 2017
- Publisher :
- HAL CCSD, 2017.
-
Abstract
- Thin-wall tubes composed of nitride semiconductors (III-N compounds) based on GaN/InAlN multiple quantum wells (MQWs) are fabricated by metalorganic vapor-phase epitaxy in a simple and full III-N approach. The synthesis of such MQW-tubes is based on the growth of N-polar c-axis vertical GaN wires surrounded by a coreshell MQW heterostructure followed by in situ selective etching using controlled H-2/NH3 annealing at 1010 degrees C to remove the inner GaN wire part. After this process, well-defined MQW-based tubes having nonpolar m-plane orientation exhibit UV light near 330 nm up to room temperature, consistent with the emission of GaN/InAlN MQWs. Partially etched tubes reveal a quantum-dotlike signature originating from nanosized GaN residuals present inside the tubes. The possibility to fabricate in a simple way thin-wall III-N tubes composed of an embedded MQW-based active region offering controllable optical emission properties constitutes an important step forward to develop new nitride devices such as emitters, detectors or sensors based on tubelike nanostructures.
- Subjects :
- Materials science
Annealing (metallurgy)
Multiple quantum
Bioengineering
quantum dots
UV emission
02 engineering and technology
Nitride
Epitaxy
01 natural sciences
MOVPE
0103 physical sciences
General Materials Science
Metalorganic vapour phase epitaxy
ComputingMilieux_MISCELLANEOUS
010302 applied physics
[PHYS]Physics [physics]
Nanotubes
business.industry
Mechanical Engineering
Heterojunction
General Chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
nitride semiconductors
multiple quantum wells
Quantum dot
Optoelectronics
0210 nano-technology
business
Nitride semiconductors
Subjects
Details
- Language :
- English
- ISSN :
- 15306984 and 15306992
- Database :
- OpenAIRE
- Journal :
- Nano Letters, Nano Letters, 2017, 17 (6), pp.3347-3355. ⟨10.1021/acs.nanolett.6b04852⟩, Nano Letters, American Chemical Society, 2017, 17 (6), pp.3347-3355. ⟨10.1021/acs.nanolett.6b04852⟩
- Accession number :
- edsair.doi.dedup.....26d007b998e90fa6b7420e43129f490c