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103 results on '"Banine V"'

1. Laser light scattering (LLS) to observe plasma impact on the adhesion of micrometer-sized particles to a surface

Author

Shefer, D., Nikipelov, A., van de Kerkhof, M., Banine, V., and Beckers, J.

Subjects
Physics - Plasma Physics
Abstract

Laser Light Scattering (LLS) method, combined with a long-distance microscope was utilized to detect micrometer-sized particles on a smooth substrate. LLS was capable to detect individual particle release, shrink, or fragmentation during exposure to a plasma or a gas jet. In-situ monitoring of hundreds of particles was carried out to investigate the effect of hydrogen plasma exposure on particle adhesion, morphology, and composition. LLS was calibrated with monodisperse melamine resin spheres with known sizes of 2.14 um, 2.94 um, and 5.26 um in diameter. The lowest achievable noise level of approximately 3% was demonstrated for counting 5.26 um spherical melamine particles. The accuracy for melamine particle size measurements ranged from 50% for 2.14 um particles to 10% for 5.26 um particles. This scatter was taken as the imprecision of the method. Size distribution for polydisperse particles with known refractive index was obtained by interpolating to an effective scattering cross-section of a sphere using Mie theory. While the Abbe diffraction limit was about 2 um in our system, the detection limit for Si particles in LLS according to Mie approximation was assessed to about 3 um, given the limitations of the laser flux, microscope resolution, camera noise, and particle composition. Additionally, the gradual changes in forward scattering cross-sections for Si particles during the exposure to the hydrogen plasma were consistent with Si etching reported in the literature.

Published
2023

2. Exploring the electron density in plasmas induced by extreme ultraviolet radiation in argon

Author

van der Horst, R. M., Beckers, J., Osorio, E. A., and Banine, V. Y.

Subjects
Physics - Plasma Physics
Abstract

The new generation of lithography tools use high energy EUV radiation which ionizes the present background gas due to photoionization. To predict and understand the long term impact on the highly delicate mirrors It is essential to characterize these kinds of EUV-induced plasmas. We measured the electron density evolution in argon gas during and just after irradiation by a short pulse of EUV light at 13.5 nm by applying microwave cavity resonance spectroscopy. Dependencies on EUV pulse energy and gas pressure have been explored over a range relevant for industrial applications. Our experimental results show that the maximum reached electron density depends linearly on pulse energy. A quadratic dependence - caused by photoionization and subsequent electron impact ionization by free electrons - is found from experiments where the gas pressure is varied. This is demonstrated by our theoretical estimates presented in this manuscript as well., Comment: submitted to J. Phys. D. 16 pages, 8 figures

Published
2015
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3. EUV induced defects on few-layer graphene

Author

Gao, A., Rizo, P. J., Zoethout, E., Scaccabarozzi, L., Lee, C. J., Banine, V., and Bijkerk, F.

Subjects
Condensed Matter - Materials Science, Physics - Chemical Physics
Abstract

We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e. relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H2 background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy (XPS) results show that the sp2 bonded carbon fraction decreases while the sp3 bonded carbon and oxide fraction increases with exposure dose. Our experimental results confirm that even in reducing environment oxidation is still one of the main source of inducing defects., Comment: 5 pages 4 figures

Published
2013
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5. The impact of hydrogen plasma on the structure and morphology of tin and lead micrometer sized particles

Author

Shefer, D., Nikipelov, A., van de Kerkhof, M., Marvi, Z., Banine, V., Beckers, J., Shefer, D., Nikipelov, A., van de Kerkhof, M., Marvi, Z., Banine, V., and Beckers, J.

Abstract

The stability of micrometer sized particles in hydrogen plasma is essential for extreme ultraviolet lithography, the ITER fusion program and the application of hydrogen plasma etching. We experimentally investigated the morphological evolution of tin (Sn), lead (Pb), and lead (II) oxide (PbO) micrometer sized particles on a surface that is exposed to a low pressure hydrogen plasma. Post exposure particle cross sections obtained by a scanning electron microscope accompanied by a focused ion beam demonstrated a significant influence of hydrogen plasma exposure on both the surface and the bulk material of the particles. Chemical sputtering at the surface and accumulation of pressurized hydrogen bubbles in cavities in the bulk material are the main drivers of the morphological changes. These mechanisms may influence the adhesion of particles to the surface through the introduction of asperities, increase of contact spot area, or fragmentation after the accumulation of mechanical stress.

Published
2023

9. Kinetic simulation of an extreme ultraviolet radiation driven plasma near a multilayer mirror

Author

Van der Velden, M.H.L., Van der Mullen, J.J.A.M., Brok, W.J.M., and Banine, V.

Subjects
Plasma density -- Research, Photoionization -- Research, Matter, Kinetic theory of -- Analysis, Argon -- Optical properties, Argon -- Chemical properties, Physics
Abstract

The influence of photoelectron emission from the mirror on the sheath dynamics and on the ion impact energy is studied. The ion impact energy distribution is convoluted with the formula of Yamamura and Tawara for the sputter yield to obtain the rate of physical sputtering.

Published
2006

16. Characterization of ion emission of an extreme ultraviolet generating discharge produced Sn plasma.

Author

Gielissen, K., Sidelnikov, Y., Glushkov, D., Soer, W. A., Banine, V., and Mullen, J. J. A. M. v. d.

Subjects
TIN, IONS, PLASMA gases, ULTRAVIOLET radiation, SPECTROMETERS
Abstract

The ion emission of a Sn-based discharge produced extreme ultraviolet producing plasma is characterized with the combined use of different time-of-flight techniques. An electrostatic ion spectrometer is employed to measure the average charge distribution of the emitted Sn ions. A dedicated Faraday cup configuration is used to measure the total ion flux from the source for different discharge energies. High-energy Sn ions emitted by the plasma with energies up to 100 keV have been identified. The number of high-energy ions increases for higher electrical input energy into the plasma while the signal associated with the expanding plasma ions does not show such dependence. The ion energy distribution for a bulk of detected ions is calculated based on the Faraday cup measurements and compared with theoretical plasma expansion dynamics. [ABSTRACT FROM AUTHOR]

Published
2010
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17. Gated pinhole camera imaging of the high-energy ions emitted by a discharge produced Sn plasma for extreme ultraviolet generation.

Author

Gielissen, K., Sidelnikov, Y., Glushkov, D., Soer, W. A., Banine, V., and v. d. Mullen, J. J. A. M.

Subjects
PHYSICS research, ELECTRONS, PROPERTIES of matter, IONS, PHOTOSYNTHETIC oxygen evolution, MAGNETIC fields, ELECTRIC resistors, PLASMA gases, PLASMA dynamics
Abstract

The origin and nature of the high-energy ions emitted by a discharge produced plasma source are studied using gated pinhole camera imaging. Time-of-flight analysis in combination with Faraday cup measurements enables characterization of the high-velocity component of the ionic debris. The use of an optional magnetic field allows mass-to-charge analysis of the first part of the Faraday cup signal. It is shown that this consists mainly of oxygen ions emitted from a region near the cathode. Time-resolved images of Sn ions with a kinetic energy of 45 keV visualize the regions in between the electrodes where the high-energy ion generation takes place. [ABSTRACT FROM AUTHOR]

Published
2009
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18. Analysis of retarding field energy analyzer transmission by simulation of ion trajectories

Author

van de Ven, T.H.M., de Meijere, C.A., van der Horst, R.M., van Kampen, M., Banine, V. Y., Beckers, J., van de Ven, T.H.M., de Meijere, C.A., van der Horst, R.M., van Kampen, M., Banine, V. Y., and Beckers, J.

Abstract

Retarding field energy analyzers (RFEAs) are used routinely for the measurement of ion energy distribution functions. By contrast, their ability to measure ion flux densities has been considered unreliable because of lack of knowledge about the effective transmission of the RFEA grids. In this work, we simulate the ion trajectories through a three-gridded RFEA using the simulation software SIMION. Using idealized test cases, it is shown that at high ion energy (i.e., >100 eV) the transmission is equal to the optical transmission rather than the product of the individual grid transparencies. Below 20 eV, ion trajectories are strongly influenced by the electric fields in between the grids. In this region, grid alignment and ion focusing effects contribute to fluctuations in transmission with ion energy. Subsequently the model has been used to simulate the transmission and energy resolution of an experimental RFEA probe. Grid misalignments reduce the transmission fluctuations at low energy. The model predicts the minimum energy resolution, which has been confirmed experimentally by irradiating the probe with a beam of ions with a small energy bandwidth.

Published
2018

19. Energy distribution functions for ions from pulsed EUV-induced plasmas in low pressure N2-diluted H2 gas.

Author

Beckers, J., van de Ven, T. H. M., de Meijere, C. A., van der Horst, R. M., van Kampen, M., and Banine, V. Y.

Subjects
SPECTRAL energy distribution, LITHOGRAPHY, HIGH-density plasmas, PHOTOIONIZATION, MOLECULAR gas lasers
Abstract

The operation of Extreme Ultraviolet (EUV) lithography scanners inherently goes hand-in-hand with the creation of highly transient pulsed plasmas in the optical path of these tools. These so-called EUV-induced plasmas are created upon photoionization events when a pulsed beam of EUV photons travels through the low pressure background gas. It is fully recognized by the lithography industry that EUV-induced plasmas may significantly impact the quality and life-time of expensive and delicate optical elements in the scanner. Research efforts into EUV-induced plasmas impacting plasma-facing surfaces have so far been limited to pure hydrogen (H2) plasmas. However, this hydrogen background gas may occasionally be diluted with a small fraction of another molecular gas such as nitrogen (N2). The impact on the relevant plasma parameters of such molecular contaminants has remained unknown until now. In this letter, we put forward measurements of energy-resolved fluxes of (positive) hydrogen ions, nitrogen ions, and hydrogen-nitrogen ions created in a pulsed N2-diluted EUV-induced plasma in H2 at approximately 5 Pa (typical EUV lithography scanner conditions). The data have been obtained using an electrostatic quadrupole plasma analyzer and show that although the N2-dilution fraction is small (∼2 × 10−3) compared to the H2 partial pressure, implications for the ion flux out of the plasma and the composition thereof are significant. Since the mass of nitrogen-containing ions is much higher in comparison to that of their hydrogen counterparts, and because of their potential chemical activity, this effect has to be taken into account while studying the surface impact of EUV-induced plasmas. [ABSTRACT FROM AUTHOR]

Published
2019
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22. Addendum: Mapping electron dynamics in highly transient EUV photon-induced plasmas: a novel diagnostic approach using multi-mode microwave cavity resonance spectroscopy (2018 J. Phys: D. Appl. Phys.52 034004).

Author

Platier, B, Wetering, F M J H van de, Ninhuijs, M A W van, Brussaard, G J H, Banine, V Y, Luiten, O J, and Beckers, J

Subjects
CAVITY resonators, TRANSIENTS (Dynamics), PHOTON counting, IONIZING radiation, ELECTRONS, MICROWAVE plasmas, FREE electron lasers, LASER plasmas
Abstract

A new approach for an in-line beam monitor for ionizing radiation was introduced in a recent publication (Beckers J et al 2018 J. Phys. D: Appl. Phys. 52 034004). Due to the recent detection and investigation of an additional third decay regime of the afterglow of an extreme ultraviolet photon-induced plasma described in a later article (Platier B et al 2020 Appl. Phys. Lett. 116 103703) there is an additional reason for a minimum number of photons for this approach to work. Near or below this threshold, we explain that the response time of the diagnostic method is a limiting factor. Further, a second limit for the number of photons within a pulse is formalized related to the trapping of highly energetic free electrons. [ABSTRACT FROM AUTHOR]

Published
2020
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23. The electron density in an EUV-generated plasma

Author

Ruud van der Horst, Job Beckers, Sander Nijdam, Osorio, E. A., Banine, V. Y., Kroesen, G. M. W., Elementary Processes in Gas Discharges, Extreme non-equilibrium plasmas, and Complex Ionized Media

Published
2014

24. Multilayer development for the generation beyond EUVL: 6.x nm

Author

Igor Alexandrovich Makhotkin, Zoethout, E., Nyabero, S. L., Viacheslav Medvedev, Robbert van de Kruijs, Andrey Yakshin, Eric Louis, Yakunin, A. M., Banine, V., Muellender, S., Frederik Bijkerk, and XUV Optics

Subjects
METIS-299686
Published
2013

25. Study of EUV induced defects on few-layer graphene

Author

Gao, An, Rizo, P.J., Zoethout, E., Scaccabarozzi, L., Lee, Christopher James, Banine, V., Bijkerk, Frederik, and XUV Optics

Subjects
technology, industry, and agriculture, METIS-299663, METIS-299664
Abstract

Defects in graphene greatly affect its properties1-3. Radiation induced-defects may reduce the long-term survivability of graphene-based nano-devices. Here, we expose few-layer graphene to extreme ultraviolet (EUV, 13.5nm) radiation and show there is a power-dependent increase in defect density. We also show that exposure to EUV radiation in an H2 background increases graphene's dosage sensitivity. This may be due to reactions caused by the EUV induced hydrogen plasma. The nature of the defects was studied with X-ray photoelectron spectroscopy (XPS), which showed that the sp3 bonded carbon and oxide fractions increase with exposure. The experimental results are important for understanding the defect-creating mechanisms upon photon interaction as well as designing graphene-based components for EUV lithography systems. Graphene samples grown on 25x25mm2 Ni/Si substrate by CVD were obtained from Graphene Laboratories, Inc. Each sample had 1 to 7 layers, with a spatial average of 4. The samples were exposed to EUV, and for comparison purposes, hydrogen radicals, under conditions summarized in table 1. Raman spectroscopy and XPS were used to study the defects in graphene. Fig. 1 shows the Raman spectra of the five samples. The spectrum for the sample exposed to EUV in a hydrogen background (SEUV+H2) has the highest D peak intensity. The spectra for the samples exposed to atomic hydrogen (SH) and EUV irradiation (SEUV) show slightly lower D peak intensities. The pristine sample (Sref), and the one exposed to molecular hydrogen (SH2) have the lowest D peak intensities. An increased D peak intensity indicates increased defect density.

Published
2013

26. Short period La/B and LaN/B multilayer mirrors for similar to 6.8 nm wavelength

Author

Makhotkin, I.A., Zoethout, E., van de Kruijs, R., Yakunin, S.N., Louis, E., Yakunin, A.M., Banine, V., Mullender, S., and Bijkerk, F.

Abstract

In the first part of this article we experimentally show that contrast between the very thin layers of La and B enables close to theoretical reflectance. The reflectivity at 6.8 nm wavelength was measured from La/B multilayer mirrors with period thicknesses ranging from 3.5 to 7.2 nm at the appropriate angle for constructive interference. The difference between the measured reflectance and the reflectance calculated for a perfect multilayer structure decreases with increasing multilayer period. The reflectance of the multilayer with the largest period approaches the theoretical value, showing that the optical contrast between the very thin layers of these structures allows to experimentally access close to theoretical reflectance. In the second part of the article we discuss the structure of La/B and LaN/B multilayers. This set of multilayers is probed by hard X-rays (lambda = 0.154 nm) and EUV radiation (lambda = 6.8 nm). The structure is reconstructed based on a simultaneous fit of the grazing incidence hard X-ray reflectivity and the EUV reflectivity curves. The reflectivity analysis of the La/B and LaN/B multilayer mirrors shows that the lower reflectance of La/B mirrors compared to LaN/B mirrors can be explained by the presence of 5% of La atoms in the B layer and 63% of B in La layer. After multi-parametrical optimization of the LaN/B system, including the nitridation of La, the highest near normal incidence reflectivity of 57.3% at 6.6 nm wavelength has been measured from a multilayer mirror, containing 175 bi-layers. This is the highest value reported so far. (C) 2013 Optical Society of America

Published
2013

27. Multilayers for 6.8 nm Wavelength

Author

Makhotkin, Igor Alexandrovich, Zoethout, E., Louis, Eric, Yakunin, A.M., Banine, V., Muellender, S., Bijkerk, Frederik, Laser Physics & Nonlinear Optics, and XUV Optics

Subjects
METIS-298885
Abstract

Lithography based on the wavelength of 6.x nm is considered to be a potential extension of the current 13.5 nm EUV lithography. Light sources might be based on Tb or Gd. The published spectra of plasmas created from these materials show highest intensities at 6.5 and 6.8 nm respectively. Multilayer mirrors (MLMs) based on La and B show the highest optical contrast for the 6.6-7 nm wavelength range and a maximum reflectance at 6.64 nm, where the B absorption is minimal. It is not possible to design high reflective B-based mirrors for 6.5 nm because this would be below the B-K absorption edge. In theory the reflectivity of La/B MLMs at 6.8 nm is only a few percent lower than at the optimal wavelength of 6.64 nm, but measurements of real multilayer mirrors show a significantly larger reduction of reflectivity at 6.8 nm. The origin of this larger drop is the reduced optical contrast of the deposited La/B mirror with respect to theoretical case. In the presentation we will discuss how the multilayer structure influences its reflectivity profile and the ways to optimize La/B mirrors for 6.8 nm.

Published
2012

29. Dynamics of the spatial electron density distribution of EUV-induced plasmas

Author

van der Horst, R. M., Beckers, J., Osorio, E. A., Banine, V. Y., van der Horst, R. M., Beckers, J., Osorio, E. A., and Banine, V. Y.

Abstract

We studied the temporal evolution of the electron density distribution in a low pressure pulsed plasma induced by high energy extreme ultraviolet (EUV) photons using microwave cavity resonance spectroscopy (MCRS). In principle, MCRS only provides space averaged information about the electron density. However, we demonstrate here the possibility to obtain spatial information by combining multiple resonant modes. It is shown that EUV-induced plasmas, albeit being a rather exotic plasma, can be explained by known plasma physical laws and processes. Two stages of plasma behaviour are observed: first the electron density distribution contracts, after which it expands. It is shown that the contraction is due to cooling of the electrons. The moment when the density distribution starts to expand is related to the inertia of the ions. After tens of microseconds, the electrons reached the wall of the cavity. The speed of this expansion is dependent on the gas pressure and can be divided into two regimes. It is shown that the acoustic dominated regime the expansion speed is independent of the gas pressure and that in the diffusion dominated regime the expansion depends reciprocal on the gas pressure.

Published
2015

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