487 results on '"Geelhaar, L."'
Search Results
202. Indium Incorporation inInxGa1–xN/GaN Nanowire HeterostructuresInvestigated by Line-of-Sight Quadrupole Mass Spectrometry.
203. GaN, AlGaN, HfO2 based radial heterostructure nanowires.
204. Atomic-scale configuration of catalyst particles on GaN nanowires.
205. Analysis of the hysteretic behavior of silicon nanowire transistors.
206. Defect characterization and analysis of IIIV nanowires grown by Nipromoted MBE
207. Corrigendum: Optical properties of GaN nanowires grown on chemical vapor deposited-graphene (2019 Nanotechnology30 214005).
208. Analyzing the growth of InxGa1-xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction.
209. Leakage currents at crystallites in ZrAlxOy thin films measured by conductive atomic-force microscopy.
210. Radius-dependent homogeneous strain in uncoalesced GaN nanowires
211. Putrescine metabolism: Enzymatic formation and non-enzymatic isotope exchange of Δ′-pyrroline
212. Record-low thresholds of InGaAsN/GaAs SQWs lasers
213. 1.3 μm VCSELs for fiber-optical communication systems
214. Influence of growth temperature on defect density in 1.3μm GaInNAs-based lasers
215. 1300 nm on gallium arsenide: quantum dots vs GaInNAs
216. GaInNAs quantum well VCSELs
217. Putrescine metabolism: Enzymatic formation and non-enzymatic isotope exchange of ?'-pyrroline
218. Tuning the Polarity of Si-Nanowire Transistors Without the Use of Doping.
219. Investigation of Carrier Recombination Processes and Transport Properties in GaInAsN/GaAs Quantum Wells.
220. Electrical conduction properties of Ga(AsN) layers.
221. Influence of growth temperature on defect density in 1.3μm GaInNAs-based lasers.
222. Record-low thresholds of InGaAsN/GaAs SQWs lasers.
223. Erratum: 'Analyzing the growth of InxGa1-xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction' [Appl. Phys. Lett. 98, 261907 (2011)].
224. 1300 nm on gallium arsenide: quantum dots vs GaInNAs.
225. Deep level transient spectroscopy on light-emitting diodes based on (In,Ga)N/GaN nanowire ensembles
226. Quenching of the E2 phonon line in the Raman spectra of wurtzite GaAs nanowires caused by the dielectric polarization contrast.
227. Efficient room-temperature nuclear spin hyperpolarization of a defect atom in a semiconductor.
228. A cyclic imine intermediate in the in vitro metabolic conversion of 1,6-diaminohexane to 6-aminohexanoic acid and caprolactam
229. A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires.
230. Radius-dependent homogeneous strain in uncoalesced GaN nanowires.
231. Optically detected cyclotron resonance studies of InxGa1-xNyAs1-y/GaAs quantum wells sandwiched between type-II AlAs/GaAs superlattices.
232. Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy.
233. Spectrally narrow exciton luminescence from monolayer MoS2 and MoSe2 exfoliated onto epitaxially grown hexagonal BN.
234. The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy.
235. Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction.
236. Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiency.
237. Enhanced Radiative Efficiency in GaN Nanowires Grown on Sputtered TiNx: Effects of Surface Electric Fields
238. Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires.
239. High-frequency acoustic charge transport in GaAs nanowires.
240. Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN–AlGaN axial heterostructure nanowires
241. Strain in GaAs–MnAs core–shell nanowires grown by molecular beam epitaxy
242. Nanoscale compositional analysis of Ni-based seed crystallites associated with GaN nanowire growth
243. Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films
244. Self-assisted GaAs nanowires with selectable number density on Silicon without oxide layer
245. Control over the number density and diameter of GaAs nanowires on Si(111) mediated by droplet epitaxy
246. Axial InAs/GaAs heterostructures on silicon in a nanowire geometry
247. Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder.
248. Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles.
249. ScN/GaN(11̅00): A New Platform for the Epitaxy of Twin-Free Metal-Semiconductor Heterostructures.
250. Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxy.
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