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Indium Incorporation inInxGa1–xN/GaN Nanowire HeterostructuresInvestigated by Line-of-Sight Quadrupole Mass Spectrometry.
- Source :
- Crystal Growth & Design; Nov2012, Vol. 12 Issue 11, p5686-5692, 7p
- Publication Year :
- 2012
Details
- Language :
- English
- ISSN :
- 15287483
- Volume :
- 12
- Issue :
- 11
- Database :
- Supplemental Index
- Journal :
- Crystal Growth & Design
- Publication Type :
- Academic Journal
- Accession number :
- 83996978
- Full Text :
- https://doi.org/10.1021/cg301181b