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Erratum: 'Analyzing the growth of InxGa1-xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction' [Appl. Phys. Lett. 98, 261907 (2011)].
- Source :
- Applied Physics Letters; 4/23/2012, Vol. 100 Issue 17, p179902, 2p
- Publication Year :
- 2012
-
Abstract
- A correction to the article "Analyzing the growth of InxGa1-xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction" that was published in the 2011 issue is presented.
- Subjects :
- SUPERLATTICE crystallography
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 100
- Issue :
- 17
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 74637466
- Full Text :
- https://doi.org/10.1063/1.4705374