Analysis of the hysteretic behavior of silicon nanowire transistors.

Details

Language :

English

ISSN :

18626351

Volume :

5

Issue :

1

Database :

Complementary Index

Journal :

Physica Status Solidi (C)

Publication Type :

Academic Journal

Accession number :

64958467

Full Text :

https://doi.org/10.1002/pssc.200776578