Search

Gate-all-around twin silicon nanowire MOSFET (TSNWFET) with 5-nm-radius channels on bulk Si wafer is successfully fabricated to achieve extremely high drive currents of 2.37 mA/mum for n-channel and 1.30 mA/mum for p-channel TSNWFETs with mid-gap TiN metal gate. It also shows good short channel effects immunity down to 30 nm gate length due to GAA structure and nanowire channel. The effect of bottom parasitic transistor in TSNWFET is also investigated.

For the first time, we have successfully fabricated gate-all-around twin silicon nanowire transistor (TSNWFET) on bulk Si wafer using self-aligned damascene-gate process. With 10nm diameter nanowire, saturation currents through twin nanowires of 2.64 mA/mum, 1.11 mA/mum for n-channel TSNWFET and p-channel TSNWFET are obtained, respectively. No roll-off of threshold voltages, ~70 mV/dec. of substhreshold swing (SS), and ~20 mV/V of drain induced barrier lowering(DIBL) down to 30 nm gate length are observed for both n-ch and p-ch TSNWFETs

For the first time, titanium-nitride (TiN) single metal gate and high-k hafnium-silicate (HfSiOx) gate dielectric have been successfully integrated in 55nm McFET SRAM cell. The use of HfSiOx gate dielectric, not only reduces gate leakage current but also improves ION/IOFF ratio of PFET to 108. Using local fin implantation (LFI) scheme, junction capacitance is reduced by 13% and junction breakdown voltage is increased by 1.4V

Modifying the multi-bridge-channel MOSFET (MBCFET) process, we have successfully fabricated single-bridge-channel MOSFET (SBCFET). Due to reduced epitaxial growth steps and simple ion implantation process, the SBCFET has manufacture-worthy simple fabrication process like conventional planar transistor. The current drivability of SBCFET shows 2.0 mA/mum @ 100 pA/mum off-current in 1.0 V operation

We demonstrate multi-bridge-channel MOSFET (MBCFET) with new gate structure on bulk Si wafer. Sub 25nm MBCFET shows excellent transistor characteristics, such as 750,000 times on/off current ratio and 3.61mA/mum drive current at 4.8nA/mum of off-state current by using tall-embedded-gate (TEG) structure. And thanks to suitable threshold voltage for n,pMBCFET and high current drivability, we successfully achieved high static noise margin (SNM) of 386mA at Vcccc = 1V

A Phase II study was conducted to evaluate the efficacy and toxicity of an irinotecan plus capecitabine combination, a new nonplatinum regimen, in chemonaive patients with advanced nonsmall cell lung carcinoma (NSCLC).Between July 2003 and April 2004, 53 patients with a histologically confirmed diagnosis of NSCLC were enrolled. All but 5 patients were male, 52 (98%) had an Eastern Cooperative Oncology Group (ECOG) performance status (PS) of 0 or 1, 39 (74%) had AJCC Stage IV disease, and the median age was 61 years. Treatment consisted of intravenous irinotecan at a dose of 90 mg/m(2) on Days 1 and 8 and oral capecitabine at a dose of 1000 mg/m(2) twice daily on Days 1-14 of each 21-day cycle, given up to 12 cycles.Of 53 patients enrolled, 22 achieved objective tumor responses (all partial responses) for an overall response rate of 41.5% (95% confidence interval [95% CI], 28.2-54.8%). After a median follow-up of 17.4 months, the median survival was 14.6 months with a 1-year survival rate of 60.1% (95% CI, 46.9-73.4%) and a median progression-free survival of 5.1 months. Treatment was very well tolerated, with only 10% of patients experiencing NCI-CTC Grade 3 or 4 toxicities. The most common toxicities were hand-foot syndrome and diarrhea. In multiple logistic regression analysis for overall response, only the stage predicted for significantly better response (P = 0.04). Squamous cell carcinoma was marginally predictive for better response (P = 0.08).The irinotecan plus capecitabine regimen demonstrated an antitumor activity that is favorably comparable with other commonly used cisplatin-based regimens. Given the mild toxicity profile and favorable survival outcome, this nonplatinum regimen warrants further evaluation in a randomized trial.

We demonstrate for the first time high performance titanium nitride (TiN) single metal gate 65nm CMOS McFET (multichannel field effect transistor) SRAM cell transistor on bulk Si wafer. This single metal gate McFET shows suitable threshold voltage (VT) and excellent transistor characteristics of SS (sub-threshold swing) and DIBL (drain induced barrier lowering) with V/sub TN/ =+0.3V and V/sub TP/=-0.3V. The SRAM cell with this CMOS McFET, high static noise margin (SNM) of 350mV is achieved at 1.0V.

Improving the MBCFET performance further, we have successfully fabricated single-metal-gate high-performance CMOS MBCFET with elevated flat source/drain (EF-S/D) formed by low temperature cyclic selective epitaxial growth (LTC-SEG) of Si. Due to the S/D engineering and LTC-SEG process, we could achieved the symmetric threshold voltage of 0.25V and -0.22V for TiN-gate n-channel MBCFET (nMBCFET) and p-channel MBCFET (pMBCFET), respectively. This single-metal MBCFET simultaneously satisfied the requirements of high-performance (HP) and low operating power (LOP) transistors in ITRS roadmap.

In this paper, the hot carrier reliability of double gate (DG) MOSFETs is evaluated by simulations. The effect of floating body and volume inversion on hot carrier injection in DG is studied. It proves that thin body DG has good immunity to hot carrier injection into the gate electrodes. And for the application of DG in nonvolatile memory, an effective method is suggested to control the hot carrier injection in DG.

We demonstrate highly manufacturable double FinFET on bulk Si wafer, named multi-channel field effect transistor (McFET) for the high performance 80nm 144M SRAM. Twin fins are formed for each transistor using our newly developed simple process scheme. McFET with L/sub G/=80nm shows several excellent transistor characteristics, such as /spl sim/5 times higher drive current than planar MOSFET, ideal subthreshold swing of 60mV/dec, drain induced barrier lowering (DIBL) of 15mV/V without pocket implantation, and negligible body bias dependency, maintaining the same source/drain resistance as planar transistor due to the unique feature of McFET.

We successfully demonstrate highly scaled damascene gate FinFET SONOS memory implemented on bulk silicon wafer. The FinFET SONOS devices show extremely high program/erase speed, large threshold voltage shifts over 4V at 1/spl mu/s/12V for program and 50/spl mu/s/-12V for erase, good retention time, and acceptable endurance. Thus, in sub-50nm regimes, ultra high speed operation becomes possible by using FinFET SONOS structure without sacrificing retention time.

Simplifying the MBCFET process further, the authors have successfully fabricated single-metal-gate CMOS MBCFET. Due to channel engineering, the symmetric threshold voltage of 0.25V and -0.22V for single TiN-gate n-channel MBCFET (nMBCFET) and p-channel MBCFET (pMBCFET), could be achieved respectively.

In this paper, we demonstrate a novel single-bridge-channel MOSFET (SBCFET) and MBCFET, on a bulk Si-substrate, for the sub-90 nm generation, by using the multiple epitaxial growth of SiGe/Si/SiGe/Si layers and a damascene gate process. The double-gate structure of the MBCFET with thin body suppresses the short channel effects effectively without any halo implantation, providing a drive current that exceeds the required value of the ITRS roadmap. The MBCFET is one of the most promising candidates for high performance applications with high scalability.

In this article, we evaluated the structural merits of a partially insulated MOSFET (PiFET), for ultimate scaling of planar MOSFETs, through simulation and fabrication. The newly fabricated PiFET showed outstanding short channel effect (SCE) immunity and off-current characteristics over the conventional MOSFET, resulting from a self-induced halo region, self-limiting S/D shallow junction, and reduced junction area due to PiOX layer formation. Thus, the PiFET can be an attractive alternative for ultimate scaling of planar MOSFETs.

A new test structure to directly measure the junction leakage current between the channel and source/drain region is developed with partially-insulated structure. Si/SiGe epitaxial growth and selective SiGe etch process are used to form PiOX (Partially-Insulating OXide) under source and drain. With this structure, the junction leakage current between source/drain and substrate is diminished and the leakage current component from channel region and source/drain is easily measured.

We demonstrate highly manufacturable sub-50 nm CMOSFETs using 'real' damascene gate process without dummy gate formation, which has structural merits in scaling resulting from locally implanted channel. The fabricated sub-50 nm CMOSFETs show the excellent suppression of short channel effect due to the locally implanted channel and the outstanding current drivability, 810 /spl mu/A//spl mu/m for nMOS and 424 /spl mu/A//spl mu/m for pMOS at V/sub DD/=1.0 V and I/sub OFF/=100 nA//spl mu/m. In particular, the pMOS performance is comparable to the state-of-the-art result.

An 80 nm 512M DDR DRAM with partially-insulated cell array transistor (PiCAT) was fabricated. Si/SiGe epitaxial growth and selective SiGe etch process were used to form PiOX (Partially-Insulating OXide) under source and drain of the cell transistor. Using these technologies, partial-SOI (Silicon-On-Insulator) structure could be realized with excellent structural and electrical advantages on bulk Si wafer. Self-limited shallow junction under source/drain and halo doping effect at the channel region were formed by PiOX. With PiCAT, junction leakage current and SCE (Short Channel Effect) were reduced, and excellent data retention time was obtained.

We demonstrate highly manufacturable sub-50 nm MBCFET with the I/sub on/ of 4.26 mA/ /spl mu/m at V/sub DD/ = 1.2V, which is the best performance ever reported. This excellent performance of the MBCFET is resulted from the vertically stacked channels and enhanced mobility. It has been fabricated on bulk Si substrate by using the multiple epitaxial growth of SiGe/Si/SiGe/Si layers and damascene gate process. It has structural and electrical merits in scaling and process integration.

BACKGROUND Docetaxel is an active agent in advanced nonsmall-cell lung carcinoma (NSCLC) and demonstrates preclinical and clinical synergism with capecitabine. We conducted the current Phase II study to evaluate the efficacy and safety of the docetaxel/capecitabine combination in chemotherapy-naive patients with advanced NSCLC. METHODS Eligibility required Stage IIIB or IV NSCLC, bidimensionally measurable disease, and an Eastern Cooperative Oncology Group performance score of 2 or lower. Treatment consisted of docetaxel 36 mg/m2 intravenously on Days 1 and 8 plus capecitabine 1000 mg/m2 orally twice per day on Days 1–14 of a 21-day cycle, for a maximum of 6 cycles. RESULTS Of 39 patients enrolled, 39 and 36 patients were evaluated for toxicity and response, respectively. The overall response rate was 53% (95% confidence interval [CI], 37–69%) with 19 partial responses (no complete response). The median duration of response was 6.2 months (range, 2.1–15.7 months). At a median follow-up of 14.2 months, 19 patients died. The median overall survival time was 17.8 months, with a 1-year survival rate of 56.4% (95% CI, 40.9–72.0%). There were two treatment-related deaths (one death due to pneumonia and one due to sepsis). Hematologic toxicity was mild to moderate. Thirteen percent of the patients had Grade 3 or 4 neutropenia. However, Grade 2 or 3 nonhematologic toxicities were frequent, which included asthenia (51%), stomatitis (33%), hand–foot syndrome (33%), and diarrhea (29%). CONCLUSIONS The docetaxel/capecitabine combination showed promising antitumor activity for chemotherapy-naive patients with advanced NSCLC, However, it was frequently associated with moderate-to-severe nonhematologic toxicities, suggesting clinical synergism in both efficacy and toxicity. Further adjustment of the dose schedule is recommended to maximize the therapeutic index. Cancer 2003. © 2003 American Cancer Society.

Xenopus homeobox gene, PV.1 ventralizes activin-induced dorsal mesoderm and inhibits neuralization of ectoderm in animal cap when overexpressed. Here we generated PV.1/engrailed fusion construct (N-PV1-EnR) to perform loss-of-function study for this transcription factor. N-PV1-EnR showed an extremely antimorphic effect, causing a partial secondary embryonic axis when expressed at ventral marginal zone of blastula. In ventral marginal zone cells, this chimeric protein induced organizer genes and suppressed ventral markers mimicking those effects reported for dominant negative BMP-4 receptor (DNBR). Moreover, N-PV1-EnR rescued the ventralized embryos caused by the ectopic dorsal expression of PV.1 but not by that of Xvent-2. These results suggested that PV.1 functions at downstream of BMP-4 as a ventralizing effector which acts separately from Xvent-2 and the dominant negative effect gained by this specific mutant is applicable for the further studies of BMP-4 downstream pathway.

An optimized process of Pb(Zr,Ti)O3(PZT) ferroelectric capacitor has been investigated in order to develop a highly scaleable 1T/1C ferroelectric random access memory. The PZT ferroelectric capacitor, Pt/PZT/Pt stack, was formed on the TiO2/SiO2/Si substrate. The PZT thin films were prepared by conventional sol-gel multi-coating method. Physical and electrical properties of the PZT ferroelectric capacitors were characterized by XRD, SEM, TEM and RT6000S, respectively.It was revealed that the microstructure of PZT thin film is strongly influenced by sol-gel coating process, especially depending on coating methods of the first PZT layer. The second phase was observed in the PZT thin films, which is found to be pyrochlore phase. The size and density of pyrochlore phase were significantly reduced by modifying the coating methods of first PZT layer. Microstructure of PZT thin film capacitors was evaluated in detail along with electrical properties such as remnant polarization, coercive electric field, and dielectric leakage. The sensing Pr window was also introduced for proper sensing margin in IT/1C ferroelectric random access memory. This concept is well verified by 64Kb 1T/1C ferroelectric random access memory.

Electrical characteristics of multi bridged channel field effect transistor (MBCFET) with various channel lengths (L) ranging from 500 to 48 nm have been investigated. The current–voltage characteristics do not show any sign of short channel effect due to surrounding gate structures. The gate bias power law of the drain saturation current, mobility, and ballistic efficiency as functions of L show mixed features of drift-diffusion and ballistic transport. The channel resistance shows anomalous decrease when L≤60 nm, which is related with the transconductance overshoot resulted in ballistic transport at small V DS. Temperature (T) dependence of the 100 nm device shows another type of transport region when T < 40 K, which can be interpreted as the one-dimensional quantum ballistic regime.

Purpose: The purpose of this study was to examine the effects of a stress-management program on stress coping methods, interpersonal relations and quality of life in patients with chronic mental illness. Methods: A none- quivalent control group pre-posttest design was used for this quasi-experimental study. The study was conducted from May 1 to December 30, 2010. The 41 participants in this study were selected from patients with chronic mental illness (20 for the experimental group and 21 for the control group). Datas were analyzed x 2 -test, t-test, paired t-test, and one-way ANCOVA with the SPSS/WIN 15.0 program. Results: There were significant changes in stress coping methods scores, interpersonal relations scores and quality of life scores in the experimental group before and after treatment, which were significantly different from those in the control group. Conclusion: The results of the study indicate that the stress-management program resulted in significant improvement in stress coping methods, interpersonal relations and quality of life for patients with chronic mental illness. Therefore, this study shows stress-management programs are useful in clinical practice as effective nursing interventions in patients with chronic mental illness.

Neurogenesis is the process that develops neuroectoderm from ectoderm. Bone morphogenetic protein (BMP) inhibition in ectodermal cells is necessary and sufficient for neurogenesis in Xenopus embryos. To isolate genes involved in early neurogenesis, Xenous Affymetrix gene chips representing 14,400 genes were analyzed in early stage of neuroectodermal cells that were produced by inhibition of BMP signaling with overexpression of a dominant-negative receptor. We identified 265 candidate genes including 107 ESTs which were newly expressed during the early neurogenesis by blocking BMP signaling. The candidates of 10 ESTs were selected and examined for upregulation in neuroectoderm. Five EST genes were confirmed to be upregulated in neuroectoderm and examined for time-dependent expression patterns in intact embryos. Two EST genes were cloned and identified as a homology of CYP26c (Xl.1946.1.A1_at) and Kielin containing VWC domain (Xl.15853.1.A1_at). One of them, CYP26c, was further characterized for its transcriptional regulation and role of anterior-posterior patterning during neurogenesis. Taken together, we analyzed and characterized genes expressed in early neurogenesis. The results suggest that neurogenesis by inhibition of BMP provides useful system to isolate genes involved in early events of neurogenesis during early vertebrate embryogenesis.

Purpose: Follicular neoplasms (FNs) such as follicular adenoma and carcinoma (FTC), nodular hyperplasia (NH) and follicular variant of papillary carcinoma (FVPC) share cytological features. In the present study, we investigate whether review of sonographic findings in patients with thyroid nodules suspicious of FN spares diagnostic thyroidectomies (DTs) by excluding benign diseases such as NH or not. Methods: From June 1999 to May 2007, DTs were performed on 98 patients who had nodules suspicious of FN. High resolution sonographic findings are available for 53 patients. According to the final histologic diagnosis: Group Ⅰ (23 patients) consisted of 20 FNs (11 FTCs), 1 Hurthle cell adenoma, 2 FVPC; Group Ⅱ (30 patients) consisted of all others (23 NHs, 4 Hashimoto’s thyroiditis, 3 papillary carcinomas (PTCs). Sonographic features were compared between the two groups. Results: Three differential sonographic findings (DSF) i.e. irregular margin, absence of peripheral halo or marked inhomogeniety were identified more often in Group Ⅱ than Group Ⅰ (P＜0.05). If we spared DTs for patients who have at least one DSF, 18 patients (34.0%) would have been selected for clinical follow-up whose final diagnoses were 14 NHs and 4 PTCs (including 1 FVPC). Sparing DTs by DSFs shows sensitivity, 56.7%; specificity, 95.7%; positive predictive value, 94.4%; negative predictive value, 62.9%; and accuracy, 73.6%, respectively. Conclusion: In patients with thyroid nodules suspicious of FN, sonographic findings such as irregular margin, absence of peripheral halo or marked inhomogeneity might spare DTs with the help of other diagnostic modalities such as cytogenetic or immunohistochemical studies.

We developed ferroelectric random access memory (FRAM)-embedded smartcards in which FRAM replaces electrically erasable PROM (EEPROM) and static random access memory (SRAM) to improve the read/write cycle time and endurance of data memories during operation, in which the main time delay retardation observed in EEPROM embedded smartcards occurs because of slow data update time. EEPROM-embedded smartcards have EEPROM, ROM, and SRAM. To utilize FRAM-embedded smartcards, we should integrate submicron ferroelectric capacitors into embedded logic complementary metal oxide semiconductor (CMOS) without the degradation of the ferroelectric properties. We resolved this process issue from the viewpoint of the back end of line (BEOL) process. As a result, we realized a highly reliable sensing window for FRAM-embedded smartcards that were realized by novel integration schemes such as tungsten and barrier metal (BM) technology, multilevel encapsulating (EBL) layer scheme and optimized intermetallic dielectrics (IMD) technology.