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Sub-20nm Surrounding-Gate Bridge-Channel MOSFETs for Low Power and High Performance Applications.

Sub-20nm Surrounding-Gate Bridge-Channel MOSFETs for Low Power and High Performance Applications.

Authors :
Eun Jung Yun
Sung-Young Lee
Min Sang Kim
Sung Min Kim
Inhyuk Choi
Jimyoung Lee
Bork Kyoung Park
Dong-Won Kim
Donggun Park
Source :
2007 IEEE International Conference on Integrated Circuit Design & Technology; 2007, p1-4, 4p
Publication Year :
2007

Details

Language :
English
ISBNs :
9781424407576
Database :
Complementary Index
Journal :
2007 IEEE International Conference on Integrated Circuit Design & Technology
Publication Type :
Conference
Accession number :
80905381
Full Text :
https://doi.org/10.1109/ICICDT.2007.4299545