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Sub-20nm Surrounding-Gate Bridge-Channel MOSFETs for Low Power and High Performance Applications.
Sub-20nm Surrounding-Gate Bridge-Channel MOSFETs for Low Power and High Performance Applications.
- Source :
- 2007 IEEE International Conference on Integrated Circuit Design & Technology; 2007, p1-4, 4p
- Publication Year :
- 2007
Details
- Language :
- English
- ISBNs :
- 9781424407576
- Database :
- Complementary Index
- Journal :
- 2007 IEEE International Conference on Integrated Circuit Design & Technology
- Publication Type :
- Conference
- Accession number :
- 80905381
- Full Text :
- https://doi.org/10.1109/ICICDT.2007.4299545