Sub-20nm Surrounding-Gate Bridge-Channel MOSFETs for Low Power and High Performance Applications.

MLA

Eun Jung Yun, et al. “Sub-20nm Surrounding-Gate Bridge-Channel MOSFETs for Low Power and High Performance Applications.” 2007 IEEE International Conference on Integrated Circuit Design & Technology, Jan. 2007, pp. 1–4. EBSCOhost, https://doi.org/10.1109/ICICDT.2007.4299545.

APA

Eun Jung Yun, Sung-Young Lee, Min Sang Kim, Sung Min Kim, Inhyuk Choi, Jimyoung Lee, Bork Kyoung Park, Dong-Won Kim, & Donggun Park. (2007). Sub-20nm Surrounding-Gate Bridge-Channel MOSFETs for Low Power and High Performance Applications. 2007 IEEE International Conference on Integrated Circuit Design & Technology, 1–4. https://doi.org/10.1109/ICICDT.2007.4299545

Chicago

Eun Jung Yun, Sung-Young Lee, Min Sang Kim, Sung Min Kim, Inhyuk Choi, Jimyoung Lee, Bork Kyoung Park, Dong-Won Kim, and Donggun Park. 2007. “Sub-20nm Surrounding-Gate Bridge-Channel MOSFETs for Low Power and High Performance Applications.” 2007 IEEE International Conference on Integrated Circuit Design & Technology, January, 1–4. doi:10.1109/ICICDT.2007.4299545.