388 results on '"Ielmini D"'
Search Results
152. Parasitic reset in the programming transient of PCMs
153. Modeling of Tunneling P/E for Nanocrystal Memories
154. Electronic Switching Effect and Phase-Change Transition in Chalcogenide Materials
155. Improving Floating-Gate Memory Reliability by Nanocrystal Storage and Pulsed Tunnel Programming
156. Reliability Study of Phase-Change Nonvolatile Memories
157. A Comparative Study of Characterization Techniques for Oxide Reliability in Flash Memories
158. Defect Generation Statistics in Thin Gate Oxides
159. Analysis of Phase Distribution in Phase-Change Nonvolatile Memories
160. Random telegraph signal noise in phase change memory devices.
161. Statistical and scaling behavior of structural relaxation effects in phase-change memory (PCM) devices.
162. A unified model for permanent and recoverable NBTI based on hole trapping and structure relaxation.
163. Overview of Modeling Approaches for Scaled Non Volatile Memories.
164. A statistical model for SILC in flash memories
165. Statistical profiling of SILC spot in flash memories
166. A Monte Carlo Investigation of Nanocrystal Memory Reliability.
167. Equivalent cell approach for extraction of the SILC distribution in flash EEPROM cells
168. Monitoring Flash EEPROM Reliability by Equivalent Cell Analysis
169. μtrench phase-change memory cell engineering and optimization.
170. Program and SILC constraints on NC memories scaling: a monte carlo approach.
171. Assessment of threshold switching dynamics in phase-change chalcogenide memories.
172. Impact of crystallization statistics on data retention for phase change memories.
173. A new charge-trapping technique to extract SILC-trap time constants in SiO/sub 2/.
174. Electrothermal and phase-change dynamics in chalcogenide-based memories.
175. High energy oxide traps and anomalous soft-programming in flash memories.
176. A new channel percolation model for VT shift in discrete-trap memories.
177. Statistical analysis of nanocrystal memory reliability.
178. Analysis of phase-transformation dynamics and estimation of amorphous-chalcogenide fraction in phase-change memories.
179. Study of data retention for nanocrystal Flash memories.
180. Analysis of quantum yield in n-channel MOSFETs.
181. A detailed investigation of the quantum yield experiment
182. Localization of SILC in flash memories after program/erase cycling.
183. Drain-accelerated degradation of tunnel oxides in Flash memories.
184. Correlated defect generation in thin oxides and its impact on Flash reliability.
185. Role of interface and bulk defect-states in the low-voltage leakage conduction of ultrathin oxides.
186. Evidence for recombination at oxide defects and new SILC model.
187. Experimental and numerical analysis of the quantum yield [MOSFETs].
188. Modeling of SILC based on electron and hole tunneling. I. Transient effects
189. Modeling of SILC based on electron and hole tunneling. II. Steady-state
190. A recombination model for transient and stationary stress-induced leakage current
191. Intersubband relaxation time for InxGa1−xAs/AlAs quantum wells with large transition energy
192. Separation of electron and hole traps by transient current analysis
193. Picosecond time-resolved luminescence studies of recombination processes in CdTe
194. Electrical properties and microscopic structure of amorphous chalcogenides.
195. A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories
196. Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5.
197. Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5.
198. How far will silicon nanocrystals push the scaling limits of NVMs technologies?
199. Structure and properties of sputter-deposited BN thin films
200. Experimental and numerical analysis of the quantum yield
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