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Evidence for recombination at oxide defects and new SILC model.
- Source :
- 2000 IEEE International Reliability Physics Symposium Proceedings 38th Annual (Cat. No.00CH37059); 2000, p55-64, 10p
- Publication Year :
- 2000
Details
- Language :
- English
- ISBNs :
- 9780780358607
- Database :
- Complementary Index
- Journal :
- 2000 IEEE International Reliability Physics Symposium Proceedings 38th Annual (Cat. No.00CH37059)
- Publication Type :
- Conference
- Accession number :
- 80765275
- Full Text :
- https://doi.org/10.1109/RELPHY.2000.843891