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Evidence for recombination at oxide defects and new SILC model.

Authors :
Ielmini, D.
Spinellii, A.S.
Lacaita, A.L.
Ghidini, G.
Source :
2000 IEEE International Reliability Physics Symposium Proceedings 38th Annual (Cat. No.00CH37059); 2000, p55-64, 10p
Publication Year :
2000

Details

Language :
English
ISBNs :
9780780358607
Database :
Complementary Index
Journal :
2000 IEEE International Reliability Physics Symposium Proceedings 38th Annual (Cat. No.00CH37059)
Publication Type :
Conference
Accession number :
80765275
Full Text :
https://doi.org/10.1109/RELPHY.2000.843891