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A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories
- Source :
- Microelectronic Engineering; 2001, Vol. 59 Issue: 1 p189-195, 7p
- Publication Year :
- 2001
Details
- Language :
- English
- ISSN :
- 01679317
- Volume :
- 59
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Microelectronic Engineering
- Publication Type :
- Periodical
- Accession number :
- ejs2932696
- Full Text :
- https://doi.org/10.1016/S0167-9317(01)00621-9