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101. Modeling of the bridge threshold voltage in A2RAM cell

102. Reliability Study of Thin-Oxide Zero-Ionization, Zero-Swing FET 1T-DRAM Memory Cell

103. Z2-FET: a multi-functional device used for photodetection

104. Thin-Film FD-SOI BIMOS Topologies for ESD Protection

105. Low-Frequency Noise Characteristics of GaN Nanowire Gate-All-Around Transistors With/Without 2-DEG Channel

106. Topology and design investigation on thin film silicon BIMOS device for ESD protection in FD-SOI technology

107. Trap and 1/f-noise effects at the surface and core of GaN nanowire gate-all-around FET structure

108. Dispositifs et technologie silicium sur isolant totalement déserté (FD-SOI)

109. Effects of BOX thickness, silicon thickness, and backgate bias on SCE of ET-SOI MOSFETs

110. Electrical Characterization of FDSOI by Capacitance Measurements in Gated p-i-n Diodes

111. A sharp-switching device with free surface and buried gates based on band modulation and feedback mechanisms

112. High-resolution mobility spectrum analysis of magnetoresistance in fully-depleted silicon-on-insulator MOSFETs

113. Evidence of Supercoupling Effect in Ultrathin Silicon Layers Using a Four-Gate MOSFET

114. Photodiode with low dark current built in silicon-on-insulator using electrostatic doping

115. Persistent Floating‐Body Effects in Fully Depleted Silicon‐on‐Insulator Transistors

116. ICPD: an SOI-based photodetector with high responsivity and tunable response spectrum

117. a new photodetector on SOI

118. Is FD-SOI immune to floating body effects?

119. a new sharp switch device integrated in 28nm FD-SOI technology

120. ψ-MOSFET Configuration for DNA Detection

121. Second Harmonic Generation: A Non-Destructive Characterization Method for Dielectric-Semiconductor Interfaces

122. Impact of Low-Temperature Coolcube™ Process on the Performance of FDSOI Tunnel FETs

123. A highly sensitive photodetector based on deepdepletion effects in SOI transistors

124. Evidence of fast and low-voltage A2RAM ‘1’ state programming

125. Sharp switching, hysteresis-free characteristics of Z 2 -FET for fast logic applications

126. MSDRAM, A2RAM and Z2-FET performance benchmark for 1T-DRAM applications

127. New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube™ integration

128. Experimental Demonstration of Operational Z 2 -FET Memory Matrix

129. Kink effect in ultrathin FDSOI MOSFETs

130. Second Harmonic Generation characterization of SOI wafers: Impact of layer thickness and interface electric field

131. Bufferless GaN-Based MOSFETs Fabricated on GaN-on-Insulator Wafer

132. Evaluation of thin-oxide Z 2 -FET DRAM cell

133. Innovative tunnel FET architectures

134. Nanoindentation effects on the electrical caracterizaron in Ψ-MOSFET configuration

135. GDNMOS and GDBIMOS devices for ESD protection in 28nm thin film UTBB FD-SOI technology

136. Towards a magnetoresistance characterization methodology for 1D nanostructured transistors

137. Novel photodetector based on FD-SOI substrate with interface coupling effect

138. Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

139. Performance Improvement and Sub-60 mV/Decade Swing in AlGaN/GaN FinFETs by Simultaneous Activation of 2DEG and Sidewall MOS Channels

140. Interface Coupled Photodetector (ICPD) With High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI)

141. Current Collapse-Free And Self-Heating Performances In Normally Off Gan Nanowire Gaa-Mosfets

142. SOI Materials and Devices

143. Extended Analysis of the $Z^{2}$ -FET: Operation as Capacitorless eDRAM

144. Growth of AlN/GaN HEMT structure Using Indium-surfactant

145. Parasitic bipolar effect in ultra-thin FD SOI MOSFETs

146. Frontiers In Electronics - Selected Papers From The Workshop On Frontiers In Electronics 2015 (Wofe-15)

147. Gate-induced vs. implanted body doping impact on Z2-FET DC operation

148. Carrier lifetime evaluation in FD-SOI layers

149. Comparison for 1/ f Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET

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