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GDNMOS and GDBIMOS devices for ESD protection in 28nm thin film UTBB FD-SOI technology

Authors :
Sorin Cristoloveanu
Philippe Galy
Louise De Conti
Maud Vinet
Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC )
Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI)
Direction de Recherche Technologique (CEA) (DRT (CEA))
Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
STMicroelectronics [Crolles] (ST-CROLLES)
Source :
2018 EUROSOI-ULIS Proceedings, 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.73-76, ⟨10.1109/ULIS.2018.8354737⟩
Publication Year :
2018
Publisher :
HAL CCSD, 2018.

Abstract

session 7: Characterization; International audience; GDNMOS (Gated Diode merged NMOS) and GDBIMOS (Gated Diode merged BIMOS) were fabricated using the 28nm thin film UTBB FD-SOI CMOS technology. Different connectivity conditions were measured and simulated. The devices are reconfigurable and promising for ESD protection applications.

Details

Language :
English
Database :
OpenAIRE
Journal :
2018 EUROSOI-ULIS Proceedings, 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.73-76, ⟨10.1109/ULIS.2018.8354737⟩
Accession number :
edsair.doi.dedup.....27bc0defbb83cf9fa549c6d47d1086da