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GDNMOS and GDBIMOS devices for ESD protection in 28nm thin film UTBB FD-SOI technology
- Source :
- 2018 EUROSOI-ULIS Proceedings, 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.73-76, ⟨10.1109/ULIS.2018.8354737⟩
- Publication Year :
- 2018
- Publisher :
- HAL CCSD, 2018.
-
Abstract
- session 7: Characterization; International audience; GDNMOS (Gated Diode merged NMOS) and GDBIMOS (Gated Diode merged BIMOS) were fabricated using the 28nm thin film UTBB FD-SOI CMOS technology. Different connectivity conditions were measured and simulated. The devices are reconfigurable and promising for ESD protection applications.
- Subjects :
- Materials science
Silicon on insulator
02 engineering and technology
Hardware_PERFORMANCEANDRELIABILITY
01 natural sciences
law.invention
law
0103 physical sciences
Hardware_INTEGRATEDCIRCUITS
Thin film
Hardware_ARITHMETICANDLOGICSTRUCTURES
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
NMOS logic
GDBIMOS
010302 applied physics
business.industry
Electrostatic Discharges ESD
GDNMOS
021001 nanoscience & nanotechnology
Cathode
Anode
CMOS
Logic gate
Optoelectronics
FD-SOI
Resistor
0210 nano-technology
business
Hardware_LOGICDESIGN
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- 2018 EUROSOI-ULIS Proceedings, 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.73-76, ⟨10.1109/ULIS.2018.8354737⟩
- Accession number :
- edsair.doi.dedup.....27bc0defbb83cf9fa549c6d47d1086da