Kink effect in ultrathin FDSOI MOSFETs

Authors :: H.G. Choi
Sorin Cristoloveanu
M. Bawedin
Hyungjin Park
Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC )
Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])
TCAD team, DMR group, SK Hynix Inc
European Project: 687931,H2020,H2020-ICT-2015,REMINDER(2016)
Source :: Solid-State Electronics, Solid-State Electronics, Elsevier, 2018, 143, pp.33-40. ⟨10.1016/j.sse.2017.12.002⟩, Solid-State Electronics, 2018, 143, pp.33-40. ⟨10.1016/j.sse.2017.12.002⟩
Publication Year :: 2018
Publisher :: HAL CCSD, 2018.
Abstract: International audience; Systematic experiments demonstrate the presence of the kink effect even in FDSOI MOSFETs. The back-gate bias controls the kink effect via the formation of a back accumulation channel. The kink is more or less pronounced according to the film thickness and channel length. However, in ultrathin (

Language :: English
ISSN :: 00381101
Database :: OpenAIRE
Journal :: Solid-State Electronics, Solid-State Electronics, Elsevier, 2018, 143, pp.33-40. ⟨10.1016/j.sse.2017.12.002⟩, Solid-State Electronics, 2018, 143, pp.33-40. ⟨10.1016/j.sse.2017.12.002⟩
Accession number :: edsair.doi.dedup.....595834b8685d40747645428da15f8883

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