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Kink effect in ultrathin FDSOI MOSFETs
- Source :
- Solid-State Electronics, Solid-State Electronics, Elsevier, 2018, 143, pp.33-40. ⟨10.1016/j.sse.2017.12.002⟩, Solid-State Electronics, 2018, 143, pp.33-40. ⟨10.1016/j.sse.2017.12.002⟩
- Publication Year :
- 2018
- Publisher :
- HAL CCSD, 2018.
-
Abstract
- International audience; Systematic experiments demonstrate the presence of the kink effect even in FDSOI MOSFETs. The back-gate bias controls the kink effect via the formation of a back accumulation channel. The kink is more or less pronounced according to the film thickness and channel length. However, in ultrathin (
- Subjects :
- Materials science
Silicon on insulator
02 engineering and technology
01 natural sciences
Super-coupling
MOSFET
0103 physical sciences
Materials Chemistry
Electrical and Electronic Engineering
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Floating-body effect
Nonlinear Sciences::Pattern Formation and Solitons
Floating body effect
010302 applied physics
SOI
business.industry
Kink effect
021001 nanoscience & nanotechnology
Condensed Matter Physics
FDSOI
Electronic, Optical and Magnetic Materials
Body potential
Optoelectronics
lipids (amino acids, peptides, and proteins)
0210 nano-technology
business
Communication channel
Subjects
Details
- Language :
- English
- ISSN :
- 00381101
- Database :
- OpenAIRE
- Journal :
- Solid-State Electronics, Solid-State Electronics, Elsevier, 2018, 143, pp.33-40. ⟨10.1016/j.sse.2017.12.002⟩, Solid-State Electronics, 2018, 143, pp.33-40. ⟨10.1016/j.sse.2017.12.002⟩
- Accession number :
- edsair.doi.dedup.....595834b8685d40747645428da15f8883