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Is FD-SOI immune to floating body effects?
- Source :
- 2018 S3S Proceedings, 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2018, San Francisco, United States. pp.20.4, ⟨10.1109/S3S.2018.8640198⟩
- Publication Year :
- 2018
- Publisher :
- HAL CCSD, 2018.
-
Abstract
- session: SOI devices 2; International audience; Evidence for floating-body effects (FBE) in fully-depleted SOI with thickness below 25 nm is found from experiments. We investigate several facets of FBE: parasitic bipolar action, kink effect, transient current, hysteresis, steep subthreshold slope and meta-stable dip. The body potential is measured together with the drain current in order to demonstrate their close correlation, in particular for out-of-equilibrium operation. The FBEs are shown to interfere with gate tunneling and super-coupling effects.
- Subjects :
- 010302 applied physics
GIDL
Materials science
business.industry
Band-to-band tunneling current
Silicon on insulator
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Subthreshold slope
Transient current
Hysteresis
Logic gate
body potential measurement
0103 physical sciences
MOSFET
Optoelectronics
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
0210 nano-technology
Drain current
business
floating body effect
Quantum tunnelling
Subjects
Details
- Language :
- English
- ISBN :
- 978-1-5386-7627-1
- ISBNs :
- 9781538676271
- Database :
- OpenAIRE
- Journal :
- 2018 S3S Proceedings, 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2018, San Francisco, United States. pp.20.4, ⟨10.1109/S3S.2018.8640198⟩
- Accession number :
- edsair.doi.dedup.....2eb7729d7517c2f3f334490c4083fd74